Page 30 - GeneSiC Semiconductor Produkte

Teilenummer	Hersteller	Beschreibung	Paket	Lager
GA16JT17-247	GeneSiC Semiconductor	TRANS SJT 1700V 16A TO-247AB FET Type: - Technology: SiC (Silicon Carbide Junction Transistor) Drain to Source Voltage (Vdss): 1700V Current - Continuous Drain (Id) @ 25°C: 16A (Tc) (90°C) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): 282W (Tc) Rds On (Max) @ Id, Vgs: 110 mOhm @ 16A Operating Temperature: 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AB Package / Case: TO-247-3	Paket: TO-247-3	Lager2.896
GA03JT12-247	GeneSiC Semiconductor	TRANS SJT 1200V 3A TO-247AB FET Type: - Technology: SiC (Silicon Carbide Junction Transistor) Drain to Source Voltage (Vdss): 1200V Current - Continuous Drain (Id) @ 25°C: 3A (Tc) (95°C) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): 15W (Tc) Rds On (Max) @ Id, Vgs: 460 mOhm @ 3A Operating Temperature: 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AB Package / Case: TO-247-3	Paket: TO-247-3	Lager7.620
GKR240/18	GeneSiC Semiconductor	DIODE GP 1.8KV 165A DO205AB Diode Type: Standard, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 1800V Current - Average Rectified (Io): 165A Voltage - Forward (Vf) (Max) @ If: 1.5V @ 60A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 22mA @ 1800V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-205AB, DO-9, Stud Supplier Device Package: DO-205AB, DO-9 Operating Temperature - Junction: -55°C ~ 150°C	Paket: DO-205AB, DO-9, Stud	Lager7.136
MURH10020R	GeneSiC Semiconductor	DIODE MODULE 200V 100A D-67 Diode Type: Standard, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 100A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 100A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75ns Current - Reverse Leakage @ Vr: 25µA @ 50V Capacitance @ Vr, F: - Mounting Type: Chassis Mount Package / Case: D-67 Supplier Device Package: D-67 Operating Temperature - Junction: -	Paket: D-67	Lager4.944
MUR7060R	GeneSiC Semiconductor	DIODE GEN PURP REV 600V 70A DO5 Diode Type: Standard, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 70A Voltage - Forward (Vf) (Max) @ If: 1.7V @ 70A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75ns Current - Reverse Leakage @ Vr: 25µA @ 50V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-203AB, DO-5, Stud Supplier Device Package: DO-5 Operating Temperature - Junction: -55°C ~ 150°C	Paket: DO-203AB, DO-5, Stud	Lager5.584
FR85D02	GeneSiC Semiconductor	DIODE GEN PURP 200V 85A DO5 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 85A Voltage - Forward (Vf) (Max) @ If: 1.4V @ 85A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 200ns Current - Reverse Leakage @ Vr: 25µA @ 100V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-203AB, DO-5, Stud Supplier Device Package: DO-5 Operating Temperature - Junction: -40°C ~ 125°C	Paket: DO-203AB, DO-5, Stud	Lager5.248
FR70DR02	GeneSiC Semiconductor	DIODE GEN PURP REV 200V 70A DO5 Diode Type: Standard, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 70A Voltage - Forward (Vf) (Max) @ If: 1.4V @ 70A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 200ns Current - Reverse Leakage @ Vr: 25µA @ 100V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-203AB, DO-5, Stud Supplier Device Package: DO-5 Operating Temperature - Junction: -40°C ~ 125°C	Paket: DO-203AB, DO-5, Stud	Lager6.832
S25G	GeneSiC Semiconductor	DIODE GEN PURP 400V 25A DO203AA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 25A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 25A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10µA @ 50V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-203AA, DO-4, Stud Supplier Device Package: - Operating Temperature - Junction: -65°C ~ 175°C	Paket: DO-203AA, DO-4, Stud	Lager4.176
S6MR	GeneSiC Semiconductor	DIODE GEN PURP REV 1KV 6A DO4 Diode Type: Standard, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 1000V Current - Average Rectified (Io): 6A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 6A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10µA @ 100V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-203AA, DO-4, Stud Supplier Device Package: DO-4 Operating Temperature - Junction: -65°C ~ 175°C	Paket: DO-203AA, DO-4, Stud	Lager3.456
FR12BR02	GeneSiC Semiconductor	DIODE GEN PURP REV 100V 12A DO4 Diode Type: Standard, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 12A Voltage - Forward (Vf) (Max) @ If: 800mV @ 12A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 200ns Current - Reverse Leakage @ Vr: 25µA @ 100V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-203AA, DO-4, Stud Supplier Device Package: DO-4 Operating Temperature - Junction: -65°C ~ 150°C	Paket: DO-203AA, DO-4, Stud	Lager3.296
S12BR	GeneSiC Semiconductor	DIODE GEN PURP REV 100V 12A DO4 Diode Type: Standard, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 12A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 12A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10µA @ 50V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-203AA, DO-4, Stud Supplier Device Package: DO-4 Operating Temperature - Junction: -65°C ~ 175°C	Paket: DO-203AA, DO-4, Stud	Lager2.256
1N3881R	GeneSiC Semiconductor	DIODE GEN PURP REV 200V 6A DO4 Diode Type: Standard, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 6A Voltage - Forward (Vf) (Max) @ If: 1.4V @ 6A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 200ns Current - Reverse Leakage @ Vr: 15µA @ 50V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-203AA, DO-4, Stud Supplier Device Package: DO-4 Operating Temperature - Junction: -65°C ~ 150°C	Paket: DO-203AA, DO-4, Stud	Lager12.048
1N6098	GeneSiC Semiconductor	DIODE SCHOTTKY 40V 50A DO5 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 50A Voltage - Forward (Vf) (Max) @ If: 700mV @ 50A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5mA @ 30V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-203AB, DO-5, Stud Supplier Device Package: DO-5 Operating Temperature - Junction: -65°C ~ 150°C	Paket: DO-203AB, DO-5, Stud	Lager8.964
GAP3SLT33-220FP	GeneSiC Semiconductor	DIODE SCHOTTKY 3.3KV 300MA TO220 Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 3300V Current - Average Rectified (Io): 300mA Voltage - Forward (Vf) (Max) @ If: 1.7V @ 300mA Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 5µA @ 3300V Capacitance @ Vr, F: 42pF @ 1V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Full Pack Supplier Device Package: TO-220FP Operating Temperature - Junction: -55°C ~ 175°C	Paket: TO-220-2 Full Pack	Lager34.752
MBRTA800150R	GeneSiC Semiconductor	DIODE SCHOTTKY 150V 400A 3TOWER Diode Configuration: 1 Pair Common Anode Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 150V Current - Average Rectified (Io) (per Diode): 400A Voltage - Forward (Vf) (Max) @ If: 880mV @ 400A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5mA @ 150V Operating Temperature - Junction: -55°C ~ 150°C Mounting Type: Chassis Mount Package / Case: Three Tower Supplier Device Package: Three Tower	Paket: Three Tower	Lager7.408
MBRF20030R	GeneSiC Semiconductor	DIODE SCHOTTKY 30V 100A TO244AB Diode Configuration: 1 Pair Common Anode Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io) (per Diode): 100A Voltage - Forward (Vf) (Max) @ If: 700mV @ 100A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1mA @ 30V Operating Temperature - Junction: -55°C ~ 150°C Mounting Type: Chassis Mount Package / Case: TO-244AB Supplier Device Package: TO-244AB	Paket: TO-244AB	Lager2.416
MBRT60035L	GeneSiC Semiconductor	DIODE SCHOTTKY 35V 300A 3 TOWER Diode Configuration: 1 Pair Common Cathode Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 35V Current - Average Rectified (Io) (per Diode): 300A Voltage - Forward (Vf) (Max) @ If: 600mV @ 300A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 3mA @ 35V Operating Temperature - Junction: -55°C ~ 150°C Mounting Type: Chassis Mount Package / Case: Three Tower Supplier Device Package: Three Tower	Paket: Three Tower	Lager3.008
MURTA60020	GeneSiC Semiconductor	DIODE MODULE 200V 600A 3TOWER Diode Configuration: 1 Pair Common Cathode Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io) (per Diode): 600A (DC) Voltage - Forward (Vf) (Max) @ If: 1.3V @ 300A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 200ns Current - Reverse Leakage @ Vr: 25µA @ 50V Operating Temperature - Junction: - Mounting Type: Chassis Mount Package / Case: Three Tower Supplier Device Package: Three Tower	Paket: Three Tower	Lager5.840
MURT30010R	GeneSiC Semiconductor	DIODE MODULE 100V 300A 3TOWER Diode Configuration: 1 Pair Common Anode Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io) (per Diode): 300A (DC) Voltage - Forward (Vf) (Max) @ If: 1.3V @ 150A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 100ns Current - Reverse Leakage @ Vr: 25µA @ 50V Operating Temperature - Junction: - Mounting Type: Chassis Mount Package / Case: Three Tower Supplier Device Package: Three Tower	Paket: Three Tower	Lager5.216
MBR50045CTR	GeneSiC Semiconductor	DIODE MODULE 45V 500A 2TOWER Diode Configuration: 1 Pair Common Anode Diode Type: Schottky, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 45V Current - Average Rectified (Io) (per Diode): 500A (DC) Voltage - Forward (Vf) (Max) @ If: 750mV @ 250A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1mA @ 20V Operating Temperature - Junction: -55°C ~ 150°C Mounting Type: Chassis Mount Package / Case: Twin Tower Supplier Device Package: Twin Tower	Paket: Twin Tower	Lager7.824
MBRT20040R	GeneSiC Semiconductor	DIODE MODULE 40V 200A 3TOWER Diode Configuration: 1 Pair Common Anode Diode Type: Schottky, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io) (per Diode): 200A (DC) Voltage - Forward (Vf) (Max) @ If: 750mV @ 100A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1mA @ 20V Operating Temperature - Junction: -55°C ~ 150°C Mounting Type: Chassis Mount Package / Case: Three Tower Supplier Device Package: Three Tower	Paket: Three Tower	Lager5.456
MBR20080CTR	GeneSiC Semiconductor	DIODE MODULE 80V 200A 2TOWER Diode Configuration: 1 Pair Common Anode Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 80V Current - Average Rectified (Io) (per Diode): 200A (DC) Voltage - Forward (Vf) (Max) @ If: 840mV @ 100A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5mA @ 20V Operating Temperature - Junction: - Mounting Type: Chassis Mount Package / Case: Twin Tower Supplier Device Package: Twin Tower	Paket: Twin Tower	Lager5.984
MUR10005CT	GeneSiC Semiconductor	DIODE MODULE 50V 100A 2TOWER Diode Configuration: 1 Pair Common Cathode Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io) (per Diode): 100A (DC) Voltage - Forward (Vf) (Max) @ If: 1.3V @ 50A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75ns Current - Reverse Leakage @ Vr: 25µA @ 50V Operating Temperature - Junction: -55°C ~ 150°C Mounting Type: Chassis Mount Package / Case: Twin Tower Supplier Device Package: Twin Tower	Paket: Twin Tower	Lager3.008
GBPC3501W	GeneSiC Semiconductor	DIODE BRIDGE 100V 35A GBPC-W Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 100V Current - Average Rectified (Io): 35A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 17.5A Current - Reverse Leakage @ Vr: 5µA @ 100V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-Square, GBPC-W Supplier Device Package: GBPC-W	Paket: 4-Square, GBPC-W	Lager7.456
KBPC1510T	GeneSiC Semiconductor	DIODE BRIDGE 15A 1000V 1PH KBPCT Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 1000V Current - Average Rectified (Io): 15A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 7.5A Current - Reverse Leakage @ Vr: 5µA @ 800V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: 4-Square, KBPC-T Supplier Device Package: KBPC-T	Paket: 4-Square, KBPC-T	Lager7.248
GBU6K	GeneSiC Semiconductor	DIODE BRIDGE 800V 6A GBU Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 800V Current - Average Rectified (Io): 6A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 6A Current - Reverse Leakage @ Vr: 5µA @ 800V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-SIP, GBU Supplier Device Package: GBU	Paket: 4-SIP, GBU	Lager111.996
DB107G	GeneSiC Semiconductor	DIODE BRIDGE 1000V 1A DB Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 1000V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A Current - Reverse Leakage @ Vr: 10µA @ 1000V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-EDIP (0.321", 8.15mm) Supplier Device Package: DB	Paket: 4-EDIP (0.321", 8.15mm)	Lager14.688
MSRT20060D	GeneSiC Semiconductor	DIODE MODULE GP 600V 200A 3TOWER Diode Configuration: 1 Pair Series Connection Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io) (per Diode): 200A Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10 µA @ 600 V Operating Temperature - Junction: -55°C ~ 150°C Mounting Type: Chassis Mount Package / Case: Three Tower Supplier Device Package: Three Tower	Paket: -	Request a Quote

GA16JT17-247

GeneSiC Semiconductor

TRANS SJT 1700V 16A TO-247AB

FET Type: -
Technology: SiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss): 1700V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc) (90°C)
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): 282W (Tc)
Rds On (Max) @ Id, Vgs: 110 mOhm @ 16A
Operating Temperature: 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-247AB
Package / Case: TO-247-3

Paket: TO-247-3

Lager2.896

GA03JT12-247

GeneSiC Semiconductor

TRANS SJT 1200V 3A TO-247AB

FET Type: -
Technology: SiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss): 1200V
Current - Continuous Drain (Id) @ 25°C: 3A (Tc) (95°C)
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): 15W (Tc)
Rds On (Max) @ Id, Vgs: 460 mOhm @ 3A
Operating Temperature: 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-247AB
Package / Case: TO-247-3

Paket: TO-247-3

Lager7.620

GKR240/18

GeneSiC Semiconductor

DIODE GP 1.8KV 165A DO205AB

Diode Type: Standard, Reverse Polarity
Voltage - DC Reverse (Vr) (Max): 1800V
Current - Average Rectified (Io): 165A
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 60A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 22mA @ 1800V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-205AB, DO-9, Stud
Supplier Device Package: DO-205AB, DO-9
Operating Temperature - Junction: -55°C ~ 150°C

Paket: DO-205AB, DO-9, Stud

Lager7.136

MURH10020R

GeneSiC Semiconductor

DIODE MODULE 200V 100A D-67

Diode Type: Standard, Reverse Polarity
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 100A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 100A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75ns
Current - Reverse Leakage @ Vr: 25µA @ 50V
Capacitance @ Vr, F: -
Mounting Type: Chassis Mount
Package / Case: D-67
Supplier Device Package: D-67
Operating Temperature - Junction: -

Paket: D-67

Lager4.944

MUR7060R

GeneSiC Semiconductor

DIODE GEN PURP REV 600V 70A DO5

Diode Type: Standard, Reverse Polarity
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 70A
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 70A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75ns
Current - Reverse Leakage @ Vr: 25µA @ 50V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AB, DO-5, Stud
Supplier Device Package: DO-5
Operating Temperature - Junction: -55°C ~ 150°C

Paket: DO-203AB, DO-5, Stud

Lager5.584

FR85D02

GeneSiC Semiconductor

DIODE GEN PURP 200V 85A DO5

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 85A
Voltage - Forward (Vf) (Max) @ If: 1.4V @ 85A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200ns
Current - Reverse Leakage @ Vr: 25µA @ 100V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AB, DO-5, Stud
Supplier Device Package: DO-5
Operating Temperature - Junction: -40°C ~ 125°C

Paket: DO-203AB, DO-5, Stud

Lager5.248

FR70DR02

GeneSiC Semiconductor

DIODE GEN PURP REV 200V 70A DO5

Diode Type: Standard, Reverse Polarity
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 70A
Voltage - Forward (Vf) (Max) @ If: 1.4V @ 70A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200ns
Current - Reverse Leakage @ Vr: 25µA @ 100V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AB, DO-5, Stud
Supplier Device Package: DO-5
Operating Temperature - Junction: -40°C ~ 125°C

Paket: DO-203AB, DO-5, Stud

Lager6.832

S25G

GeneSiC Semiconductor

DIODE GEN PURP 400V 25A DO203AA

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 25A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 25A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10µA @ 50V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AA, DO-4, Stud
Supplier Device Package: -
Operating Temperature - Junction: -65°C ~ 175°C

Paket: DO-203AA, DO-4, Stud

Lager4.176

S6MR

GeneSiC Semiconductor

DIODE GEN PURP REV 1KV 6A DO4

Diode Type: Standard, Reverse Polarity
Voltage - DC Reverse (Vr) (Max): 1000V
Current - Average Rectified (Io): 6A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 6A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10µA @ 100V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AA, DO-4, Stud
Supplier Device Package: DO-4
Operating Temperature - Junction: -65°C ~ 175°C

Paket: DO-203AA, DO-4, Stud

Lager3.456

FR12BR02

GeneSiC Semiconductor

DIODE GEN PURP REV 100V 12A DO4

Diode Type: Standard, Reverse Polarity
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 12A
Voltage - Forward (Vf) (Max) @ If: 800mV @ 12A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200ns
Current - Reverse Leakage @ Vr: 25µA @ 100V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AA, DO-4, Stud
Supplier Device Package: DO-4
Operating Temperature - Junction: -65°C ~ 150°C

Paket: DO-203AA, DO-4, Stud

Lager3.296

S12BR

GeneSiC Semiconductor

DIODE GEN PURP REV 100V 12A DO4

Diode Type: Standard, Reverse Polarity
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 12A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 12A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10µA @ 50V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AA, DO-4, Stud
Supplier Device Package: DO-4
Operating Temperature - Junction: -65°C ~ 175°C

Paket: DO-203AA, DO-4, Stud

Lager2.256

1N3881R

GeneSiC Semiconductor

DIODE GEN PURP REV 200V 6A DO4

Diode Type: Standard, Reverse Polarity
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 6A
Voltage - Forward (Vf) (Max) @ If: 1.4V @ 6A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200ns
Current - Reverse Leakage @ Vr: 15µA @ 50V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AA, DO-4, Stud
Supplier Device Package: DO-4
Operating Temperature - Junction: -65°C ~ 150°C

Paket: DO-203AA, DO-4, Stud

Lager12.048

1N6098

GeneSiC Semiconductor

DIODE SCHOTTKY 40V 50A DO5

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40V
Current - Average Rectified (Io): 50A
Voltage - Forward (Vf) (Max) @ If: 700mV @ 50A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 5mA @ 30V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AB, DO-5, Stud
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 150°C

Paket: DO-203AB, DO-5, Stud

Lager8.964

GAP3SLT33-220FP

GeneSiC Semiconductor

DIODE SCHOTTKY 3.3KV 300MA TO220

Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 3300V
Current - Average Rectified (Io): 300mA
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 300mA
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 5µA @ 3300V
Capacitance @ Vr, F: 42pF @ 1V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack
Supplier Device Package: TO-220FP
Operating Temperature - Junction: -55°C ~ 175°C

Paket: TO-220-2 Full Pack

Lager34.752

MBRTA800150R

GeneSiC Semiconductor

DIODE SCHOTTKY 150V 400A 3TOWER

Diode Configuration: 1 Pair Common Anode
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 150V
Current - Average Rectified (Io) (per Diode): 400A
Voltage - Forward (Vf) (Max) @ If: 880mV @ 400A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 5mA @ 150V
Operating Temperature - Junction: -55°C ~ 150°C
Mounting Type: Chassis Mount
Package / Case: Three Tower
Supplier Device Package: Three Tower

Paket: Three Tower

Lager7.408

MBRF20030R

GeneSiC Semiconductor

DIODE SCHOTTKY 30V 100A TO244AB

Diode Configuration: 1 Pair Common Anode
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30V
Current - Average Rectified (Io) (per Diode): 100A
Voltage - Forward (Vf) (Max) @ If: 700mV @ 100A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1mA @ 30V
Operating Temperature - Junction: -55°C ~ 150°C
Mounting Type: Chassis Mount
Package / Case: TO-244AB
Supplier Device Package: TO-244AB

Paket: TO-244AB

Lager2.416

MBRT60035L

GeneSiC Semiconductor

DIODE SCHOTTKY 35V 300A 3 TOWER

Diode Configuration: 1 Pair Common Cathode
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 35V
Current - Average Rectified (Io) (per Diode): 300A
Voltage - Forward (Vf) (Max) @ If: 600mV @ 300A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 3mA @ 35V
Operating Temperature - Junction: -55°C ~ 150°C
Mounting Type: Chassis Mount
Package / Case: Three Tower
Supplier Device Package: Three Tower

Paket: Three Tower

Lager3.008

MURTA60020

GeneSiC Semiconductor

DIODE MODULE 200V 600A 3TOWER

Diode Configuration: 1 Pair Common Cathode
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io) (per Diode): 600A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 300A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200ns
Current - Reverse Leakage @ Vr: 25µA @ 50V
Operating Temperature - Junction: -
Mounting Type: Chassis Mount
Package / Case: Three Tower
Supplier Device Package: Three Tower

Paket: Three Tower

Lager5.840

MURT30010R

GeneSiC Semiconductor

DIODE MODULE 100V 300A 3TOWER

Diode Configuration: 1 Pair Common Anode
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io) (per Diode): 300A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 150A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 100ns
Current - Reverse Leakage @ Vr: 25µA @ 50V
Operating Temperature - Junction: -
Mounting Type: Chassis Mount
Package / Case: Three Tower
Supplier Device Package: Three Tower

Paket: Three Tower

Lager5.216

MBR50045CTR

GeneSiC Semiconductor

DIODE MODULE 45V 500A 2TOWER

Diode Configuration: 1 Pair Common Anode
Diode Type: Schottky, Reverse Polarity
Voltage - DC Reverse (Vr) (Max): 45V
Current - Average Rectified (Io) (per Diode): 500A (DC)
Voltage - Forward (Vf) (Max) @ If: 750mV @ 250A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1mA @ 20V
Operating Temperature - Junction: -55°C ~ 150°C
Mounting Type: Chassis Mount
Package / Case: Twin Tower
Supplier Device Package: Twin Tower

Paket: Twin Tower

Lager7.824

MBRT20040R

GeneSiC Semiconductor

DIODE MODULE 40V 200A 3TOWER

Diode Configuration: 1 Pair Common Anode
Diode Type: Schottky, Reverse Polarity
Voltage - DC Reverse (Vr) (Max): 40V
Current - Average Rectified (Io) (per Diode): 200A (DC)
Voltage - Forward (Vf) (Max) @ If: 750mV @ 100A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1mA @ 20V
Operating Temperature - Junction: -55°C ~ 150°C
Mounting Type: Chassis Mount
Package / Case: Three Tower
Supplier Device Package: Three Tower

Paket: Three Tower

Lager5.456

MBR20080CTR

GeneSiC Semiconductor

DIODE MODULE 80V 200A 2TOWER

Diode Configuration: 1 Pair Common Anode
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 80V
Current - Average Rectified (Io) (per Diode): 200A (DC)
Voltage - Forward (Vf) (Max) @ If: 840mV @ 100A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 5mA @ 20V
Operating Temperature - Junction: -
Mounting Type: Chassis Mount
Package / Case: Twin Tower
Supplier Device Package: Twin Tower

Paket: Twin Tower

Lager5.984

MUR10005CT

GeneSiC Semiconductor

DIODE MODULE 50V 100A 2TOWER

Diode Configuration: 1 Pair Common Cathode
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io) (per Diode): 100A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 50A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75ns
Current - Reverse Leakage @ Vr: 25µA @ 50V
Operating Temperature - Junction: -55°C ~ 150°C
Mounting Type: Chassis Mount
Package / Case: Twin Tower
Supplier Device Package: Twin Tower

Paket: Twin Tower

Lager3.008

GBPC3501W

GeneSiC Semiconductor

DIODE BRIDGE 100V 35A GBPC-W

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 100V
Current - Average Rectified (Io): 35A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 17.5A
Current - Reverse Leakage @ Vr: 5µA @ 100V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-Square, GBPC-W
Supplier Device Package: GBPC-W

Paket: 4-Square, GBPC-W

Lager7.456

KBPC1510T

GeneSiC Semiconductor

DIODE BRIDGE 15A 1000V 1PH KBPCT

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 1000V
Current - Average Rectified (Io): 15A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 7.5A
Current - Reverse Leakage @ Vr: 5µA @ 800V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: 4-Square, KBPC-T
Supplier Device Package: KBPC-T

Paket: 4-Square, KBPC-T

Lager7.248

GBU6K

GeneSiC Semiconductor

DIODE BRIDGE 800V 6A GBU

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 800V
Current - Average Rectified (Io): 6A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 6A
Current - Reverse Leakage @ Vr: 5µA @ 800V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-SIP, GBU
Supplier Device Package: GBU

Paket: 4-SIP, GBU

Lager111.996

DB107G

GeneSiC Semiconductor

DIODE BRIDGE 1000V 1A DB

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 1000V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
Current - Reverse Leakage @ Vr: 10µA @ 1000V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-EDIP (0.321", 8.15mm)
Supplier Device Package: DB

Paket: 4-EDIP (0.321", 8.15mm)

Lager14.688

MSRT20060D

GeneSiC Semiconductor

DIODE MODULE GP 600V 200A 3TOWER

Diode Configuration: 1 Pair Series Connection
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600 V
Current - Average Rectified (Io) (per Diode): 200A
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Operating Temperature - Junction: -55°C ~ 150°C
Mounting Type: Chassis Mount
Package / Case: Three Tower
Supplier Device Package: Three Tower

Paket: -

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