Page 5 - NXP Produkte - Transistoren - Bipolar (BJT) - Einzeln, mit Vorspannung | Heisener Electronics
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NXP Produkte - Transistoren - Bipolar (BJT) - Einzeln, mit Vorspannung

Aufzeichnungen 177
Page  5/7
Bild
Teilenummer
Hersteller
Beschreibung
Paket
Lager
Anzahl
Current - Collector (Ic) (Max)
Voltage - Collector Emitter Breakdown (Max)
Resistor - Base (R1) (Ohms)
Resistor - Emitter Base (R2) (Ohms)
DC Current Gain (hFE) (Min) @ Ic, Vce
Vce Saturation (Max) @ Ib, Ic
Current - Collector Cutoff (Max)
Frequency - Transition
Power - Max
Mounting Type
Package / Case
Supplier Device Package
PDTA123TK,115
NXP

TRANS PREBIAS PNP 250MW SMT3

  • Transistor Type: PNP - Pre-Biased
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 2.2k
  • Resistor - Emitter Base (R2) (Ohms): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 20mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max): 1µA
  • Frequency - Transition: -
  • Power - Max: 250mW
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SMT3; MPAK
Paket: TO-236-3, SC-59, SOT-23-3
Lager5.776
100mA
50V
2.2k
-
30 @ 20mA, 5V
150mV @ 500µA, 10mA
1µA
-
250mW
Surface Mount
TO-236-3, SC-59, SOT-23-3
SMT3; MPAK
PDTA123JS,126
NXP

TRANS PREBIAS PNP 500MW TO92-3

  • Transistor Type: PNP - Pre-Biased
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 2.2k
  • Resistor - Emitter Base (R2) (Ohms): 47k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 1µA
  • Frequency - Transition: -
  • Power - Max: 500mW
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package: TO-92-3
Paket: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Lager7.904
100mA
50V
2.2k
47k
100 @ 10mA, 5V
100mV @ 250µA, 5mA
1µA
-
500mW
Through Hole
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
TO-92-3
PDTA123ES,126
NXP

TRANS PREBIAS PNP 500MW TO92-3

  • Transistor Type: PNP - Pre-Biased
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 2.2k
  • Resistor - Emitter Base (R2) (Ohms): 2.2k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 20mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max): 1µA
  • Frequency - Transition: -
  • Power - Max: 500mW
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package: TO-92-3
Paket: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Lager3.120
100mA
50V
2.2k
2.2k
30 @ 20mA, 5V
150mV @ 500µA, 10mA
1µA
-
500mW
Through Hole
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
TO-92-3
PDTA115TS,126
NXP

TRANS PREBIAS PNP 500MW TO92-3

  • Transistor Type: PNP - Pre-Biased
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 100k
  • Resistor - Emitter Base (R2) (Ohms): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 1µA
  • Frequency - Transition: -
  • Power - Max: 500mW
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package: TO-92-3
Paket: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Lager6.128
100mA
50V
100k
-
100 @ 1mA, 5V
150mV @ 250µA, 5mA
1µA
-
500mW
Through Hole
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
TO-92-3
PDTA115ES,126
NXP

TRANS PREBIAS PNP 500MW TO92-3

  • Transistor Type: PNP - Pre-Biased
  • Current - Collector (Ic) (Max): 20mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 100k
  • Resistor - Emitter Base (R2) (Ohms): 100k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 1µA
  • Frequency - Transition: -
  • Power - Max: 500mW
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package: TO-92-3
Paket: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Lager2.912
20mA
50V
100k
100k
80 @ 5mA, 5V
150mV @ 250µA, 5mA
1µA
-
500mW
Through Hole
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
TO-92-3
PDTA114YS,126
NXP

TRANS PREBIAS PNP 500MW TO92-3

  • Transistor Type: PNP - Pre-Biased
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 10k
  • Resistor - Emitter Base (R2) (Ohms): 47k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 1µA
  • Frequency - Transition: -
  • Power - Max: 500mW
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package: TO-92-3
Paket: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Lager4.416
100mA
50V
10k
47k
100 @ 5mA, 5V
100mV @ 250µA, 5mA
1µA
-
500mW
Through Hole
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
TO-92-3
PDTA113ZS,126
NXP

TRANS PREBIAS PNP 500MW TO92-3

  • Transistor Type: PNP - Pre-Biased
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 1k
  • Resistor - Emitter Base (R2) (Ohms): 10k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max): 1µA
  • Frequency - Transition: -
  • Power - Max: 500mW
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package: TO-92-3
Paket: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Lager2.880
100mA
50V
1k
10k
35 @ 5mA, 5V
150mV @ 500µA, 10mA
1µA
-
500mW
Through Hole
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
TO-92-3
PDTA113ZK,115
NXP

TRANS PREBIAS PNP 250MW SMT3

  • Transistor Type: PNP - Pre-Biased
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 1k
  • Resistor - Emitter Base (R2) (Ohms): 10k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max): 1µA
  • Frequency - Transition: -
  • Power - Max: 250mW
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SMT3; MPAK
Paket: TO-236-3, SC-59, SOT-23-3
Lager3.680
100mA
50V
1k
10k
35 @ 5mA, 5V
150mV @ 500µA, 10mA
1µA
-
250mW
Surface Mount
TO-236-3, SC-59, SOT-23-3
SMT3; MPAK
PDTA113ES,126
NXP

TRANS PREBIAS PNP 500MW TO92-3

  • Transistor Type: PNP - Pre-Biased
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 1k
  • Resistor - Emitter Base (R2) (Ohms): 1k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 40mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 150mV @ 1.5mA, 30mA
  • Current - Collector Cutoff (Max): 1µA
  • Frequency - Transition: -
  • Power - Max: 500mW
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package: TO-92-3
Paket: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Lager7.200
100mA
50V
1k
1k
30 @ 40mA, 5V
150mV @ 1.5mA, 30mA
1µA
-
500mW
Through Hole
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
TO-92-3
PDTA113EK,115
NXP

TRANS PREBIAS PNP 250MW SMT3

  • Transistor Type: PNP - Pre-Biased
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 1k
  • Resistor - Emitter Base (R2) (Ohms): 1k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 40mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 150mV @ 1.5mA, 30mA
  • Current - Collector Cutoff (Max): 1µA
  • Frequency - Transition: -
  • Power - Max: 250mW
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SMT3; MPAK
Paket: TO-236-3, SC-59, SOT-23-3
Lager5.024
100mA
50V
1k
1k
30 @ 40mA, 5V
150mV @ 1.5mA, 30mA
1µA
-
250mW
Surface Mount
TO-236-3, SC-59, SOT-23-3
SMT3; MPAK
PBRP123YS,126
NXP

TRANS PREBIAS PNP 500MW TO92-3

  • Transistor Type: PNP - Pre-Biased
  • Current - Collector (Ic) (Max): 800mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 2.2k
  • Resistor - Emitter Base (R2) (Ohms): 10k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Vce Saturation (Max) @ Ib, Ic: -
  • Current - Collector Cutoff (Max): -
  • Frequency - Transition: -
  • Power - Max: 500mW
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package: TO-92-3
Paket: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Lager4.240
800mA
50V
2.2k
10k
-
-
-
-
500mW
Through Hole
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
TO-92-3
PBRP123ES,126
NXP

TRANS PREBIAS PNP 500MW TO92-3

  • Transistor Type: PNP - Pre-Biased
  • Current - Collector (Ic) (Max): 800mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 2.2k
  • Resistor - Emitter Base (R2) (Ohms): 2.2k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Vce Saturation (Max) @ Ib, Ic: -
  • Current - Collector Cutoff (Max): -
  • Frequency - Transition: -
  • Power - Max: 500mW
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package: TO-92-3
Paket: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Lager4.608
800mA
50V
2.2k
2.2k
-
-
-
-
500mW
Through Hole
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
TO-92-3
PBRP113ZS,126
NXP

TRANS PREBIAS PNP 500MW TO92-3

  • Transistor Type: PNP - Pre-Biased
  • Current - Collector (Ic) (Max): 800mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 1k
  • Resistor - Emitter Base (R2) (Ohms): 10k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Vce Saturation (Max) @ Ib, Ic: -
  • Current - Collector Cutoff (Max): -
  • Frequency - Transition: -
  • Power - Max: 500mW
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package: TO-92-3
Paket: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Lager2.768
800mA
50V
1k
10k
-
-
-
-
500mW
Through Hole
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
TO-92-3
PBRP113ES,126
NXP

TRANS PREBIAS PNP 500MW TO92-3

  • Transistor Type: PNP - Pre-Biased
  • Current - Collector (Ic) (Max): 800mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 1k
  • Resistor - Emitter Base (R2) (Ohms): 1k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Vce Saturation (Max) @ Ib, Ic: -
  • Current - Collector Cutoff (Max): -
  • Frequency - Transition: -
  • Power - Max: 500mW
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package: TO-92-3
Paket: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Lager4.864
800mA
50V
1k
1k
-
-
-
-
500mW
Through Hole
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
TO-92-3
PBRN123YS,126
NXP

TRANS PREBIAS NPN 0.7W TO92-3

  • Transistor Type: NPN - Pre-Biased
  • Current - Collector (Ic) (Max): 800mA
  • Voltage - Collector Emitter Breakdown (Max): 40V
  • Resistor - Base (R1) (Ohms): 2.2k
  • Resistor - Emitter Base (R2) (Ohms): 10k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 500 @ 300mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 1.15V @ 8mA, 800mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: -
  • Power - Max: 700mW
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package: TO-92-3
Paket: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Lager6.864
800mA
40V
2.2k
10k
500 @ 300mA, 5V
1.15V @ 8mA, 800mA
500nA
-
700mW
Through Hole
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
TO-92-3
PBRN123YK,115
NXP

TRANS PREBIAS NPN 250MW SMT3

  • Transistor Type: NPN - Pre-Biased
  • Current - Collector (Ic) (Max): 600mA
  • Voltage - Collector Emitter Breakdown (Max): 40V
  • Resistor - Base (R1) (Ohms): 2.2k
  • Resistor - Emitter Base (R2) (Ohms): 10k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 500 @ 300mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 1.15V @ 8mA, 800mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: -
  • Power - Max: 250mW
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SMT3; MPAK
Paket: TO-236-3, SC-59, SOT-23-3
Lager3.216
600mA
40V
2.2k
10k
500 @ 300mA, 5V
1.15V @ 8mA, 800mA
500nA
-
250mW
Surface Mount
TO-236-3, SC-59, SOT-23-3
SMT3; MPAK
PBRN123ES,126
NXP

TRANS PREBIAS NPN 0.7W TO92-3

  • Transistor Type: NPN - Pre-Biased
  • Current - Collector (Ic) (Max): 800mA
  • Voltage - Collector Emitter Breakdown (Max): 40V
  • Resistor - Base (R1) (Ohms): 2.2k
  • Resistor - Emitter Base (R2) (Ohms): 2.2k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 280 @ 300mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 1.15V @ 8mA, 800mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: -
  • Power - Max: 700mW
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package: TO-92-3
Paket: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Lager6.320
800mA
40V
2.2k
2.2k
280 @ 300mA, 5V
1.15V @ 8mA, 800mA
500nA
-
700mW
Through Hole
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
TO-92-3
PBRN123EK,115
NXP

TRANS PREBIAS NPN 250MW SMT3

  • Transistor Type: NPN - Pre-Biased
  • Current - Collector (Ic) (Max): 600mA
  • Voltage - Collector Emitter Breakdown (Max): 40V
  • Resistor - Base (R1) (Ohms): 2.2k
  • Resistor - Emitter Base (R2) (Ohms): 2.2k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 280 @ 300mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 1.15V @ 8mA, 800mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: -
  • Power - Max: 250mW
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SMT3; MPAK
Paket: TO-236-3, SC-59, SOT-23-3
Lager5.488
600mA
40V
2.2k
2.2k
280 @ 300mA, 5V
1.15V @ 8mA, 800mA
500nA
-
250mW
Surface Mount
TO-236-3, SC-59, SOT-23-3
SMT3; MPAK
PBRN113ZS,126
NXP

TRANS PREBIAS NPN 0.7W TO92-3

  • Transistor Type: NPN - Pre-Biased
  • Current - Collector (Ic) (Max): 800mA
  • Voltage - Collector Emitter Breakdown (Max): 40V
  • Resistor - Base (R1) (Ohms): 1k
  • Resistor - Emitter Base (R2) (Ohms): 10k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 500 @ 300mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 1.15V @ 8mA, 800mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: -
  • Power - Max: 700mW
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package: TO-92-3
Paket: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Lager3.088
800mA
40V
1k
10k
500 @ 300mA, 5V
1.15V @ 8mA, 800mA
500nA
-
700mW
Through Hole
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
TO-92-3
PBRN113ZK,115
NXP

TRANS PREBIAS NPN 250MW SMT3

  • Transistor Type: NPN - Pre-Biased
  • Current - Collector (Ic) (Max): 600mA
  • Voltage - Collector Emitter Breakdown (Max): 40V
  • Resistor - Base (R1) (Ohms): 1k
  • Resistor - Emitter Base (R2) (Ohms): 10k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 500 @ 300mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 1.15V @ 8mA, 800mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: -
  • Power - Max: 250mW
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SMT3; MPAK
Paket: TO-236-3, SC-59, SOT-23-3
Lager6.304
600mA
40V
1k
10k
500 @ 300mA, 5V
1.15V @ 8mA, 800mA
500nA
-
250mW
Surface Mount
TO-236-3, SC-59, SOT-23-3
SMT3; MPAK
PBRN113ES,126
NXP

TRANS PREBIAS NPN 0.7W TO92-3

  • Transistor Type: NPN - Pre-Biased
  • Current - Collector (Ic) (Max): 800mA
  • Voltage - Collector Emitter Breakdown (Max): 40V
  • Resistor - Base (R1) (Ohms): 1k
  • Resistor - Emitter Base (R2) (Ohms): 1k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 300mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 1.15V @ 8mA, 800mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: -
  • Power - Max: 700mW
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package: TO-92-3
Paket: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Lager6.448
800mA
40V
1k
1k
180 @ 300mA, 5V
1.15V @ 8mA, 800mA
500nA
-
700mW
Through Hole
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
TO-92-3
PBRN113EK,115
NXP

TRANS PREBIAS NPN 250MW SMT3

  • Transistor Type: NPN - Pre-Biased
  • Current - Collector (Ic) (Max): 600mA
  • Voltage - Collector Emitter Breakdown (Max): 40V
  • Resistor - Base (R1) (Ohms): 1k
  • Resistor - Emitter Base (R2) (Ohms): 1k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 300mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 1.15V @ 8mA, 800mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: -
  • Power - Max: 250mW
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SMT3; MPAK
Paket: TO-236-3, SC-59, SOT-23-3
Lager3.984
600mA
40V
1k
1k
180 @ 300mA, 5V
1.15V @ 8mA, 800mA
500nA
-
250mW
Surface Mount
TO-236-3, SC-59, SOT-23-3
SMT3; MPAK
PDTD123YK,115
NXP

TRANS PREBIAS NPN 250MW SMT3

  • Transistor Type: NPN - Pre-Biased
  • Current - Collector (Ic) (Max): 500mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 2.2k
  • Resistor - Emitter Base (R2) (Ohms): 10k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: -
  • Power - Max: 250mW
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SMT3; MPAK
Paket: TO-236-3, SC-59, SOT-23-3
Lager3.488
500mA
50V
2.2k
10k
70 @ 50mA, 5V
300mV @ 2.5mA, 50mA
500nA
-
250mW
Surface Mount
TO-236-3, SC-59, SOT-23-3
SMT3; MPAK
PDTD123EK,115
NXP

TRANS PREBIAS NPN 250MW SMT3

  • Transistor Type: NPN - Pre-Biased
  • Current - Collector (Ic) (Max): 500mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 2.2k
  • Resistor - Emitter Base (R2) (Ohms): 2.2k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 50mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: -
  • Power - Max: 250mW
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SMT3; MPAK
Paket: TO-236-3, SC-59, SOT-23-3
Lager3.216
500mA
50V
2.2k
2.2k
40 @ 50mA, 5V
300mV @ 2.5mA, 50mA
500nA
-
250mW
Surface Mount
TO-236-3, SC-59, SOT-23-3
SMT3; MPAK
PDTD113ZK,115
NXP

TRANS PREBIAS NPN 250MW SMT3

  • Transistor Type: NPN - Pre-Biased
  • Current - Collector (Ic) (Max): 500mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 1k
  • Resistor - Emitter Base (R2) (Ohms): 10k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: -
  • Power - Max: 250mW
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SMT3; MPAK
Paket: TO-236-3, SC-59, SOT-23-3
Lager3.664
500mA
50V
1k
10k
70 @ 50mA, 5V
300mV @ 2.5mA, 50mA
500nA
-
250mW
Surface Mount
TO-236-3, SC-59, SOT-23-3
SMT3; MPAK
PDTD113EK,115
NXP

TRANS PREBIAS NPN 250MW SMT3

  • Transistor Type: NPN - Pre-Biased
  • Current - Collector (Ic) (Max): 500mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 1k
  • Resistor - Emitter Base (R2) (Ohms): 1k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 50mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: -
  • Power - Max: 250mW
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SMT3; MPAK
Paket: TO-236-3, SC-59, SOT-23-3
Lager3.344
500mA
50V
1k
1k
33 @ 50mA, 5V
300mV @ 2.5mA, 50mA
500nA
-
250mW
Surface Mount
TO-236-3, SC-59, SOT-23-3
SMT3; MPAK
PDTC144WS,126
NXP

TRANS PREBIAS NPN 500MW TO92-3

  • Transistor Type: NPN - Pre-Biased
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 47k
  • Resistor - Emitter Base (R2) (Ohms): 22k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max): 1µA
  • Frequency - Transition: -
  • Power - Max: 500mW
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package: TO-92-3
Paket: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Lager6.928
100mA
50V
47k
22k
60 @ 5mA, 5V
150mV @ 500µA, 10mA
1µA
-
500mW
Through Hole
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
TO-92-3
PDTD123YS,126
NXP

TRANS PREBIAS NPN 500MW TO92-3

  • Transistor Type: NPN - Pre-Biased
  • Current - Collector (Ic) (Max): 500mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 2.2k
  • Resistor - Emitter Base (R2) (Ohms): 10k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: -
  • Power - Max: 500mW
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package: TO-92-3
Paket: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Lager7.888
500mA
50V
2.2k
10k
70 @ 50mA, 5V
300mV @ 2.5mA, 50mA
500nA
-
500mW
Through Hole
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
TO-92-3