Taiwan Semiconductor Corporation Produkte

Teilenummer	Hersteller	Beschreibung	Paket	Lager
BZD27C91P RUG	Taiwan Semiconductor Corporation	DIODE, ZENER, 91V, 1000MW, %, SU Voltage - Zener (Nom) (Vz): 90.5V Tolerance: ±6.07% Power - Max: 1W Impedance (Max) (Zzt): 200 Ohms Current - Reverse Leakage @ Vr: 1µA @ 68V Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: Sub SMA	Paket: DO-219AB	Lager5.920
2M43Z A0G	Taiwan Semiconductor Corporation	DIODE, ZENER, 43V, 2000MW, %, DO Voltage - Zener (Nom) (Vz): 43V Tolerance: ±5% Power - Max: 2W Impedance (Max) (Zzt): 35 Ohms Current - Reverse Leakage @ Vr: 500nA @ 32.7V Voltage - Forward (Vf) (Max) @ If: - Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: DO-204AC, DO-15, Axial Supplier Device Package: DO-204AC (DO-15)	Paket: DO-204AC, DO-15, Axial	Lager6.096
BZD27C30PWHRVG	Taiwan Semiconductor Corporation	DIODE, ZENER, 30V, 1000MW, %, AE Voltage - Zener (Nom) (Vz): 30V Tolerance: ±5% Power - Max: 1W Impedance (Max) (Zzt): 15 Ohms Current - Reverse Leakage @ Vr: 1µA @ 22V Voltage - Forward (Vf) (Max) @ If: 1V @ 200mA Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: SOD-123W Supplier Device Package: SOD123W	Paket: SOD-123W	Lager4.128
BZD27C20PHMTG	Taiwan Semiconductor Corporation	DIODE, ZENER, 20V, 1000MW, %, AE Voltage - Zener (Nom) (Vz): 20V Tolerance: ±6% Power - Max: 1W Impedance (Max) (Zzt): 15 Ohms Current - Reverse Leakage @ Vr: 1µA @ 15V Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: Sub SMA	Paket: DO-219AB	Lager7.232
BZD27C91P RQG	Taiwan Semiconductor Corporation	DIODE, ZENER, 91V, 1000MW, %, SU Voltage - Zener (Nom) (Vz): 90.5V Tolerance: ±6.07% Power - Max: 1W Impedance (Max) (Zzt): 200 Ohms Current - Reverse Leakage @ Vr: 1µA @ 68V Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: Sub SMA	Paket: DO-219AB	Lager4.480
BZX584B12 RKG	Taiwan Semiconductor Corporation	DIODE, ZENER, 12V, 150MW, 2%, SO Voltage - Zener (Nom) (Vz): 12V Tolerance: ±2% Power - Max: 150mW Impedance (Max) (Zzt): 25 Ohms Current - Reverse Leakage @ Vr: 100nA @ 8V Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-79, SOD-523 Supplier Device Package: SOD-523F	Paket: SC-79, SOD-523	Lager6.864
1SMA4756 M2G	Taiwan Semiconductor Corporation	DIODE, ZENER, 47V, 1000MW, %, DO Voltage - Zener (Nom) (Vz): 47V Tolerance: ±5% Power - Max: 1.25W Impedance (Max) (Zzt): 80 Ohms Current - Reverse Leakage @ Vr: 1µA @ 35.8V Voltage - Forward (Vf) (Max) @ If: - Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA)	Paket: DO-214AC, SMA	Lager7.392
TSZU52C4V3 RGG	Taiwan Semiconductor Corporation	DIODE, ZENER, 4.3V, 150MW, 5%, 0 Voltage - Zener (Nom) (Vz): 4.3V Tolerance: ±5% Power - Max: 150mW Impedance (Max) (Zzt): 95 Ohms Current - Reverse Leakage @ Vr: 5µA @ 1V Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA Operating Temperature: -55°C ~ 125°C (TJ) Mounting Type: Surface Mount Package / Case: 0201 (0603 Metric) Supplier Device Package: 0603	Paket: 0201 (0603 Metric)	Lager6.064
BZT52B22 RHG	Taiwan Semiconductor Corporation	DIODE, ZENER, 22V, 500MW, 2%, SO Voltage - Zener (Nom) (Vz): 22V Tolerance: ±2% Power - Max: 500mW Impedance (Max) (Zzt): 55 Ohms Current - Reverse Leakage @ Vr: 45nA @ 15.4V Voltage - Forward (Vf) (Max) @ If: 1V @ 10mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOD-123F Supplier Device Package: SOD-123F	Paket: SOD-123F	Lager2.928
BZY55C6V8 RYG	Taiwan Semiconductor Corporation	DIODE, ZENER, 6.8V, 500MW, 5%, 0 Voltage - Zener (Nom) (Vz): 6.8V Tolerance: ±5% Power - Max: 500mW Impedance (Max) (Zzt): 8 Ohms Current - Reverse Leakage @ Vr: 100nA @ 3V Voltage - Forward (Vf) (Max) @ If: 1.5V @ 10mA Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 0805 (2012 Metric) Supplier Device Package: 0805	Paket: 0805 (2012 Metric)	Lager6.400
BZY55B6V2 RYG	Taiwan Semiconductor Corporation	DIODE, ZENER, 6.2V, 500MW, 2%, 0 Voltage - Zener (Nom) (Vz): 6.2V Tolerance: ±2% Power - Max: 500mW Impedance (Max) (Zzt): 10 Ohms Current - Reverse Leakage @ Vr: 100nA @ 2V Voltage - Forward (Vf) (Max) @ If: 1.5V @ 10mA Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 0805 (2012 Metric) Supplier Device Package: 0805	Paket: 0805 (2012 Metric)	Lager4.480
BZX55B75 A0G	Taiwan Semiconductor Corporation	DIODE, ZENER, 75V, 500MW, 2%, DO Voltage - Zener (Nom) (Vz): 75V Tolerance: ±2% Power - Max: 500mW Impedance (Max) (Zzt): 170 Ohms Current - Reverse Leakage @ Vr: 100nA @ 56V Voltage - Forward (Vf) (Max) @ If: 1V @ 100mA Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: DO-204AH, DO-35, Axial Supplier Device Package: DO-35	Paket: DO-204AH, DO-35, Axial	Lager7.904
TS10P01G C2G	Taiwan Semiconductor Corporation	BRIDGE RECTIFIER, STANDARD, 10A, Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 50V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 10A Current - Reverse Leakage @ Vr: 10µA @ 50V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-SIP, TS-6P Supplier Device Package: TS-6P	Paket: 4-SIP, TS-6P	Lager4.048
ABS15JHRGG	Taiwan Semiconductor Corporation	BRIDGE RECTIFIER, STANDARD, 1.5A Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 600V Current - Average Rectified (Io): 1.5A Voltage - Forward (Vf) (Max) @ If: 1V @ 1.5A Current - Reverse Leakage @ Vr: 5µA @ 600V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 4-SMD, Gull Wing Supplier Device Package: ABS	Paket: 4-SMD, Gull Wing	Lager2.688
1SMB5937H	Taiwan Semiconductor Corporation	DIODE ZENER 33V 3W DO214AA Voltage - Zener (Nom) (Vz): 33 V Tolerance: ±5% Power - Max: 3 W Impedance (Max) (Zzt): 33 Ohms Current - Reverse Leakage @ Vr: 1 µA @ 25.1 V Voltage - Forward (Vf) (Max) @ If: - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: DO-214AA (SMB)	Paket: -	Request a Quote
MBRS1545CT	Taiwan Semiconductor Corporation	DIODE ARR SCHOTT 45V 15A TO263AB Diode Configuration: 1 Pair Common Cathode Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 45 V Current - Average Rectified (Io) (per Diode): 15A Voltage - Forward (Vf) (Max) @ If: 840 mV @ 15 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100 µA @ 45 V Operating Temperature - Junction: -55°C ~ 150°C Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263AB (D2PAK)	Paket: -	Request a Quote
TSM300NB06LDCR-RLG	Taiwan Semiconductor Corporation	MOSFET 2N-CH 60V 5A/24A 8PDFNU FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 24A (Tc) Rds On (Max) @ Id, Vgs: 30mOhm @ 5A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 966pF @ 30V Power - Max: 2W (Ta), 40W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: 8-PDFNU (5x6)	Paket: -	Lager15.000
SR1202H-A0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 20V 12A DO201AD Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 20 V Current - Average Rectified (Io): 12A Voltage - Forward (Vf) (Max) @ If: 550 mV @ 12 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500 µA @ 20 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -55°C ~ 150°C	Paket: -	Request a Quote
HS2FAH	Taiwan Semiconductor Corporation	50NS, 1.5A, 300V, HIGH EFFICIENT Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 300 V Current - Average Rectified (Io): 1.5A Voltage - Forward (Vf) (Max) @ If: 1 V @ 1.5 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Current - Reverse Leakage @ Vr: 5 µA @ 300 V Capacitance @ Vr, F: 50pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C	Paket: -	Lager45.000
TS8P01G	Taiwan Semiconductor Corporation	DIODE BRIDGE 8A 50V TS-6P Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 50 V Current - Average Rectified (Io): 8 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A Current - Reverse Leakage @ Vr: 10 µA @ 50 V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-SIP, TS-6P Supplier Device Package: TS-6P	Paket: -	Request a Quote
M3Z2V4C-RRG	Taiwan Semiconductor Corporation	SOD-323F, 200MW, 5%, ZENER DIODE Voltage - Zener (Nom) (Vz): 2.4 V Tolerance: ±5% Power - Max: 200 mW Impedance (Max) (Zzt): 90 Ohms Current - Reverse Leakage @ Vr: 120 µA @ 1 V Voltage - Forward (Vf) (Max) @ If: - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-90, SOD-323F Supplier Device Package: SOD-323F	Paket: -	Lager9.000
PU1DMH	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 1A MICRO SMA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 36 ns Current - Reverse Leakage @ Vr: 1 µA @ 200 V Capacitance @ Vr, F: 18pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: 2-SMD, Flat Lead Supplier Device Package: Micro SMA Operating Temperature - Junction: -55°C ~ 175°C	Paket: -	Lager17.160
RS2KA	Taiwan Semiconductor Corporation	DIODE GEN PURP 800V 1.5A DO214AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800 V Current - Average Rectified (Io): 1.5A Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500 ns Current - Reverse Leakage @ Vr: 5 µA @ 800 V Capacitance @ Vr, F: 50pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C	Paket: -	Lager45.000
MBR2060CTH	Taiwan Semiconductor Corporation	DIODE ARR SCHOTT 60V 20A TO220AB Diode Configuration: 1 Pair Common Cathode Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60 V Current - Average Rectified (Io) (per Diode): 20A Voltage - Forward (Vf) (Max) @ If: 950 mV @ 20 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100 µA @ 60 V Operating Temperature - Junction: -55°C ~ 150°C Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220AB	Paket: -	Request a Quote
TSM4NB60CH-C5G	Taiwan Semiconductor Corporation	MOSFET N-CH 600V 4A TO251 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 14.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 25 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 50W (Tc) Rds On (Max) @ Id, Vgs: 2.5Ohm @ 2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-251 (IPAK) Package / Case: TO-251-3 Short Leads, IPAK, TO-251AA	Paket: -	Lager67.248
MBR20H150CT	Taiwan Semiconductor Corporation	DIODE ARR SCHOT 150V 20A TO220AB Diode Configuration: 1 Pair Common Cathode Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 150 V Current - Average Rectified (Io) (per Diode): 20A Voltage - Forward (Vf) (Max) @ If: 970 mV @ 20 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5 µA @ 150 V Operating Temperature - Junction: -55°C ~ 175°C Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220AB	Paket: -	Lager4.407
RABS15M	Taiwan Semiconductor Corporation	BRIDGE RECT 1P 1KV 1.5A ABS-L Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 1 kV Current - Average Rectified (Io): 1.5 A Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A Current - Reverse Leakage @ Vr: 1 µA @ 1000 V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 4-SMD, Gull Wing Supplier Device Package: ABS-L	Paket: -	Lager15.000
BZT52C51-G-RHG	Taiwan Semiconductor Corporation	SOD-123, 350MW, 5%, SMALL SIGNAL Voltage - Zener (Nom) (Vz): 51 V Tolerance: ±5% Power - Max: 500 mW Impedance (Max) (Zzt): 180 Ohms Current - Reverse Leakage @ Vr: 45 nA @ 35.7 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOD-123F Supplier Device Package: SOD-123F	Paket: -	Lager9.000
SF45GH	Taiwan Semiconductor Corporation	DIODE GEN PURP 300V 4A DO201AD Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 300 V Current - Average Rectified (Io): 4A Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 4 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Current - Reverse Leakage @ Vr: 5 µA @ 300 V Capacitance @ Vr, F: 80pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -55°C ~ 150°C	Paket: -	Lager7.500
TQM300NB06CR-RLG	Taiwan Semiconductor Corporation	MOSFET N-CH 60V 6A/27A 8PDFNU FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 27A (Tc) Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs(th) (Max) @ Id: 3.8V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1009 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.1W (Ta), 56W (Tc) Rds On (Max) @ Id, Vgs: 30mOhm @ 6A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount, Wettable Flank Supplier Device Package: 8-PDFNU (5x6) Package / Case: 8-PowerTDFN	Paket: -	Lager14.997