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Taiwan Semiconductor Corporation Produkte

Aufzeichnungen 4.299
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BZD27C220PHR3G
Taiwan Semiconductor Corporation

DIODE, ZENER, 220V, 1000MW, %, A

  • Voltage - Zener (Nom) (Vz): 220.5V
  • Tolerance: ±5.66%
  • Power - Max: 1W
  • Impedance (Max) (Zzt): 900 Ohms
  • Current - Reverse Leakage @ Vr: 1µA @ 160V
  • Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: DO-219AB
  • Supplier Device Package: Sub SMA
Paket: DO-219AB
Lager2.000
1SMB5932HR5G
Taiwan Semiconductor Corporation

DIODE, ZENER, 20V, 3000MW, 5%, A

  • Voltage - Zener (Nom) (Vz): 20V
  • Tolerance: ±5%
  • Power - Max: 3W
  • Impedance (Max) (Zzt): 14 Ohms
  • Current - Reverse Leakage @ Vr: 1µA @ 15.2V
  • Voltage - Forward (Vf) (Max) @ If: -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AA, SMB
  • Supplier Device Package: DO-214AA (SMB)
Paket: DO-214AA, SMB
Lager2.384
1N4753AHB0G
Taiwan Semiconductor Corporation

DIODE, ZENER, 36V, 1000MW, 5%, A

  • Voltage - Zener (Nom) (Vz): 36V
  • Tolerance: ±5%
  • Power - Max: 1W
  • Impedance (Max) (Zzt): 50 Ohms
  • Current - Reverse Leakage @ Vr: 5µA @ 27.4V
  • Voltage - Forward (Vf) (Max) @ If: -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: DO-204AL, DO-41, Axial
  • Supplier Device Package: DO-204AL (DO-41)
Paket: DO-204AL, DO-41, Axial
Lager6.544
1SMA5947HR3G
Taiwan Semiconductor Corporation

DIODE, ZENER, 82V, 1500MW, 5%, A

  • Voltage - Zener (Nom) (Vz): 82V
  • Tolerance: ±5%
  • Power - Max: 1.5W
  • Impedance (Max) (Zzt): 160 Ohms
  • Current - Reverse Leakage @ Vr: 500nA @ 62.2V
  • Voltage - Forward (Vf) (Max) @ If: -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AC, SMA
  • Supplier Device Package: DO-214AC (SMA)
Paket: DO-214AC, SMA
Lager3.040
1SMA5933 M2G
Taiwan Semiconductor Corporation

DIODE, ZENER, 22V, 1500MW, 5%, D

  • Voltage - Zener (Nom) (Vz): 22V
  • Tolerance: ±5%
  • Power - Max: 1.5W
  • Impedance (Max) (Zzt): 17.5 Ohms
  • Current - Reverse Leakage @ Vr: 500nA @ 16.7V
  • Voltage - Forward (Vf) (Max) @ If: -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AC, SMA
  • Supplier Device Package: DO-214AC (SMA)
Paket: DO-214AC, SMA
Lager7.456
TSZU52C5V1 RGG
Taiwan Semiconductor Corporation

DIODE, ZENER, 5.1V, 150MW, 5%, 0

  • Voltage - Zener (Nom) (Vz): 5.1V
  • Tolerance: ±5%
  • Power - Max: 150mW
  • Impedance (Max) (Zzt): 60 Ohms
  • Current - Reverse Leakage @ Vr: 100nA @ 800mV
  • Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA
  • Operating Temperature: -55°C ~ 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 0201 (0603 Metric)
  • Supplier Device Package: 0603
Paket: 0201 (0603 Metric)
Lager7.248
BZX55B3V9 A0G
Taiwan Semiconductor Corporation

DIODE, ZENER, 3.9V, 500MW, 2%, D

  • Voltage - Zener (Nom) (Vz): 3.9V
  • Tolerance: ±2%
  • Power - Max: 500mW
  • Impedance (Max) (Zzt): 85 Ohms
  • Current - Reverse Leakage @ Vr: 2µA @ 1V
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 100mA
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: DO-204AH, DO-35, Axial
  • Supplier Device Package: DO-35
Paket: DO-204AH, DO-35, Axial
Lager5.952
BZT52B5V1 RHG
Taiwan Semiconductor Corporation

DIODE, ZENER, 5.1V, 500MW, 2%, S

  • Voltage - Zener (Nom) (Vz): 5.1V
  • Tolerance: ±2%
  • Power - Max: 500mW
  • Impedance (Max) (Zzt): 60 Ohms
  • Current - Reverse Leakage @ Vr: 1.8µA @ 2V
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 10mA
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOD-123F
  • Supplier Device Package: SOD-123F
Paket: SOD-123F
Lager5.296
TS40P07G C2G
Taiwan Semiconductor Corporation

BRIDGE RECTIFIER, STANDARD, 40A,

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1000V
  • Current - Average Rectified (Io): 40A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 20A
  • Current - Reverse Leakage @ Vr: 10µA @ 1000V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, TS-6P
  • Supplier Device Package: TS-6P
Paket: 4-SIP, TS-6P
Lager4.960
1SMB5938H
Taiwan Semiconductor Corporation

DIODE ZENER 36V 3W DO214AA

  • Voltage - Zener (Nom) (Vz): 36 V
  • Tolerance: ±5%
  • Power - Max: 3 W
  • Impedance (Max) (Zzt): 38 Ohms
  • Current - Reverse Leakage @ Vr: 1 µA @ 27.4 V
  • Voltage - Forward (Vf) (Max) @ If: -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AA, SMB
  • Supplier Device Package: DO-214AA (SMB)
Paket: -
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DBLS157GH
Taiwan Semiconductor Corporation

BRIDGE RECT 1PHASE 1KV 1.5A DBLS

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1 kV
  • Current - Average Rectified (Io): 1.5 A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
  • Current - Reverse Leakage @ Vr: 2 µA @ 1000 V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 4-SMD, Gull Wing
  • Supplier Device Package: DBLS
Paket: -
Lager9.000
BZD17C68PH
Taiwan Semiconductor Corporation

SUB SMA, 800MW, 6%, ZENER DIODE

  • Voltage - Zener (Nom) (Vz): 68 V
  • Tolerance: ±5%
  • Power - Max: 1 W
  • Impedance (Max) (Zzt): 80 Ohms
  • Current - Reverse Leakage @ Vr: 1 µA @ 51 V
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOD-123
  • Supplier Device Package: Sub SMA
Paket: -
Request a Quote
2M75Z
Taiwan Semiconductor Corporation

DIODE ZENER 75V 2W DO204AC

  • Voltage - Zener (Nom) (Vz): 75 V
  • Tolerance: ±5%
  • Power - Max: 2 W
  • Impedance (Max) (Zzt): 90 Ohms
  • Current - Reverse Leakage @ Vr: 500 nA @ 56 V
  • Voltage - Forward (Vf) (Max) @ If: -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: DO-204AC, DO-15, Axial
  • Supplier Device Package: DO-204AC (DO-15)
Paket: -
Request a Quote
SS215ALH
Taiwan Semiconductor Corporation

2A, 150V, SCHOTTKY RECTIFIER

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 150 V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 10 µA @ 150 V
  • Capacitance @ Vr, F: 48pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-221AC, SMA Flat Leads
  • Supplier Device Package: Thin SMA
  • Operating Temperature - Junction: -55°C ~ 150°C
Paket: -
Request a Quote
MBRAD8150H
Taiwan Semiconductor Corporation

8A, 150V, SCHOTTKY RECTIFIER

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 150 V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 950 mV @ 8 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 10 µA @ 150 V
  • Capacitance @ Vr, F: 155pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
  • Supplier Device Package: ThinDPAK
  • Operating Temperature - Junction: -55°C ~ 150°C
Paket: -
Lager13.500
UGF1006GAH
Taiwan Semiconductor Corporation

DIODE ARRAY GP 400V 10A ITO220AB

  • Diode Configuration: 1 Pair Common Anode
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400 V
  • Current - Average Rectified (Io) (per Diode): 10A
  • Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 5 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 20 ns
  • Current - Reverse Leakage @ Vr: 10 µA @ 400 V
  • Operating Temperature - Junction: -55°C ~ 175°C
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 Full Pack, Isolated Tab
  • Supplier Device Package: ITO-220AB
Paket: -
Lager3.000
TSM019NH04LCR-RLG
Taiwan Semiconductor Corporation

40V, 100A, SINGLE N-CHANNEL POWE

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 100A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 6282 pF @ 25 V
  • Vgs (Max): ±16V
  • FET Feature: -
  • Power Dissipation (Max): 150W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.9mOhm @ 50A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-PDFNU (5x6)
  • Package / Case: 8-PowerTDFN
Paket: -
Lager14.895
TSM230N06CP
Taiwan Semiconductor Corporation

60V, 50A, SINGLE N-CHANNEL POWER

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1680 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 53W (Tc)
  • Rds On (Max) @ Id, Vgs: 23mOhm @ 20A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252 (DPAK)
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
Paket: -
Request a Quote
TSM60NC980CH-C5G
Taiwan Semiconductor Corporation

600V, 4A, SINGLE N-CHANNEL POWER

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 300 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 57W (Tc)
  • Rds On (Max) @ Id, Vgs: 980mOhm @ 1.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-251 (IPAK)
  • Package / Case: TO-251-3 Short Leads, IPAK, TO-251AA
Paket: -
Lager39.342
TSZU52C2V0
Taiwan Semiconductor Corporation

603, 150MW, 5%, SMALL SIGNAL ZEN

  • Voltage - Zener (Nom) (Vz): 2 V
  • Tolerance: ±5%
  • Power - Max: 150 mW
  • Impedance (Max) (Zzt): 100 Ohms
  • Current - Reverse Leakage @ Vr: 100 µA @ 1 V
  • Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
  • Operating Temperature: -55°C ~ 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 0603 (1608 Metric)
  • Supplier Device Package: 0603
Paket: -
Request a Quote
BZT52B12-G
Taiwan Semiconductor Corporation

SOD-123, 410MW, 2%, SMALL SIGNAL

  • Voltage - Zener (Nom) (Vz): 12 V
  • Tolerance: ±2%
  • Power - Max: 410 mW
  • Impedance (Max) (Zzt): 25 Ohms
  • Current - Reverse Leakage @ Vr: 100 nA @ 8 V
  • Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOD-123
  • Supplier Device Package: SOD-123
Paket: -
Request a Quote
1PGSMA4747H
Taiwan Semiconductor Corporation

DIODE ZENER 20V 1.25W DO214AC

  • Voltage - Zener (Nom) (Vz): 20 V
  • Tolerance: ±5%
  • Power - Max: 1.25 W
  • Impedance (Max) (Zzt): 22 Ohms
  • Current - Reverse Leakage @ Vr: 1 µA @ 15.2 V
  • Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AC, SMA
  • Supplier Device Package: DO-214AC (SMA)
Paket: -
Request a Quote
1PGSMC5368
Taiwan Semiconductor Corporation

DO-214AB (SMC), 5000MW, 5%, ZENE

  • Voltage - Zener (Nom) (Vz): 47 V
  • Tolerance: ±5%
  • Power - Max: 5 W
  • Impedance (Max) (Zzt): 25 Ohms
  • Current - Reverse Leakage @ Vr: 500 nA @ 35.8 V
  • Voltage - Forward (Vf) (Max) @ If: -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AB, SMC
  • Supplier Device Package: DO-214AB (SMC)
Paket: -
Request a Quote
TSM60NC390CH-C5G
Taiwan Semiconductor Corporation

600V, 11A, SINGLE N-CHANNEL POWE

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 21.4 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 818 pF @ 100 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 125W (Tc)
  • Rds On (Max) @ Id, Vgs: 390mOhm @ 3.8A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-251 (IPAK)
  • Package / Case: TO-251-3 Short Leads, IPAK, TO-251AA
Paket: -
Lager45.000
SK35AH
Taiwan Semiconductor Corporation

DIODE SCHOTTKY 50V 3A DO214AC

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 50 V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 720 mV @ 3 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 200 µA @ 50 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AC, SMA
  • Supplier Device Package: DO-214AC (SMA)
  • Operating Temperature - Junction: -55°C ~ 150°C
Paket: -
Request a Quote
GBPC5006
Taiwan Semiconductor Corporation

50A, 600V, STANDARD BRIDGE RECTI

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 600 V
  • Current - Average Rectified (Io): 50 A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 25 A
  • Current - Reverse Leakage @ Vr: 10 µA @ 600 V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: 4-Square, GBPC
  • Supplier Device Package: GBPC
Paket: -
Lager555
SR009H
Taiwan Semiconductor Corporation

DIODE SCHOTTKY 90V 500MA DO204AL

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 90 V
  • Current - Average Rectified (Io): 500mA
  • Voltage - Forward (Vf) (Max) @ If: 850 mV @ 500 mA
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 100 µA @ 90 V
  • Capacitance @ Vr, F: 65pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-204AL, DO-41, Axial
  • Supplier Device Package: DO-204AL (DO-41)
  • Operating Temperature - Junction: -55°C ~ 150°C
Paket: -
Request a Quote
SRAF560H
Taiwan Semiconductor Corporation

DIODE SCHOTTKY 60V 5A ITO220AC

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 60 V
  • Current - Average Rectified (Io): 5A
  • Voltage - Forward (Vf) (Max) @ If: 700 mV @ 5 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 500 µA @ 60 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2 Full Pack
  • Supplier Device Package: ITO-220AC
  • Operating Temperature - Junction: -55°C ~ 150°C
Paket: -
Request a Quote