Toshiba Semiconductor and Storage Produkte

2SK2989(TPE6,F,M)

Toshiba Semiconductor and Storage

MOSFET N-CH

• FET Type: -
• Technology: -
• Drain to Source Voltage (Vdss): -
• Current - Continuous Drain (Id) @ 25°C: -
• Drive Voltage (Max Rds On, Min Rds On): -
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: -
• Vgs (Max): -
• FET Feature: -
• Power Dissipation (Max): -
• Rds On (Max) @ Id, Vgs: -
• Operating Temperature: -
• Mounting Type: Through Hole
• Supplier Device Package: TO-92MOD
• Package / Case: TO-226-3, TO-92-3 Long Body

Paket: TO-226-3, TO-92-3 Long Body

TK56E12N1,S1X

Toshiba Semiconductor and Storage

MOSFET N CH 120V 56A TO-220

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 120V
• Current - Continuous Drain (Id) @ 25°C: 56A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 69nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 4200pF @ 60V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 168W (Tc)
• Rds On (Max) @ Id, Vgs: 7 mOhm @ 28A, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220
• Package / Case: TO-220-3

Paket: TO-220-3

TK8S06K3L(T6L1,NQ)

Toshiba Semiconductor and Storage

MOSFET N-CH 60V 8A DPAK-3

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
• Vgs(th) (Max) @ Id: 3V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 10V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 25W (Tc)
• Rds On (Max) @ Id, Vgs: 54 mOhm @ 4A, 10V
• Operating Temperature: 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: DPAK+
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

Paket: TO-252-3, DPak (2 Leads + Tab), SC-63

2SA1931,NETQ(J

Toshiba Semiconductor and Storage

TRANS PNP 5A 50V TO220-3

• Transistor Type: PNP
• Current - Collector (Ic) (Max): 5A
• Voltage - Collector Emitter Breakdown (Max): 50V
• Vce Saturation (Max) @ Ib, Ic: 400mV @ 200mA, 2A
• Current - Collector Cutoff (Max): 1µA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 1V
• Power - Max: 2W
• Frequency - Transition: 60MHz
• Operating Temperature: 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack
• Supplier Device Package: TO-220NIS

Paket: TO-220-3 Full Pack

RN2106ACT(TPL3)

Toshiba Semiconductor and Storage

TRANS PREBIAS PNP 0.1W CST3

• Transistor Type: PNP - Pre-Biased
• Current - Collector (Ic) (Max): 80mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Resistor - Base (R1) (Ohms): 4.7k
• Resistor - Emitter Base (R2) (Ohms): 47k
• DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA
• Current - Collector Cutoff (Max): 500nA
• Frequency - Transition: -
• Power - Max: 100mW
• Mounting Type: Surface Mount
• Package / Case: SC-101, SOT-883
• Supplier Device Package: CST3

Paket: SC-101, SOT-883

RN1102T5LFT

Toshiba Semiconductor and Storage

TRANS PREBIAS NPN 0.1W SSM

• Transistor Type: NPN - Pre-Biased
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Resistor - Base (R1) (Ohms): 10k
• Resistor - Emitter Base (R2) (Ohms): 10k
• DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
• Current - Collector Cutoff (Max): 500nA
• Frequency - Transition: 250MHz
• Power - Max: 100mW
• Mounting Type: Surface Mount
• Package / Case: SC-75, SOT-416
• Supplier Device Package: SSM

Paket: SC-75, SOT-416

RN4984,LF(CT

Toshiba Semiconductor and Storage

TRANS NPN/PNP PREBIAS 0.2W US6

• Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Resistor - Base (R1) (Ohms): 47k
• Resistor - Emitter Base (R2) (Ohms): 47k
• DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
• Current - Collector Cutoff (Max): 500nA
• Frequency - Transition: 250MHz, 200MHz
• Power - Max: 200mW
• Mounting Type: Surface Mount
• Package / Case: 6-TSSOP, SC-88, SOT-363
• Supplier Device Package: US6

Paket: 6-TSSOP, SC-88, SOT-363

TRS8E65C,S1Q

Toshiba Semiconductor and Storage

DIODE SCHOTTKY 650V 8A TO220-2L

• Diode Type: Silicon Carbide Schottky
• Voltage - DC Reverse (Vr) (Max): 650V
• Current - Average Rectified (Io): 8A (DC)
• Voltage - Forward (Vf) (Max) @ If: 1.7V @ 8A
• Speed: No Recovery Time > 500mA (Io)
• Reverse Recovery Time (trr): 0ns
• Current - Reverse Leakage @ Vr: 90µA @ 650V
• Capacitance @ Vr, F: 44pF @ 650V, 1MHz
• Mounting Type: Through Hole
• Package / Case: TO-220-2
• Supplier Device Package: TO-220-2L
• Operating Temperature - Junction: 175°C (Max)

Paket: TO-220-2

1SS387CT,L3F

Toshiba Semiconductor and Storage

DIODE GEN PURP 80V 100MA CST2

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 80V
• Current - Average Rectified (Io): 100mA
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 100mA
• Speed: Small Signal =< 200mA (Io), Any Speed
• Reverse Recovery Time (trr): 1.6ns
• Current - Reverse Leakage @ Vr: 500nA @ 80V
• Capacitance @ Vr, F: 0.5pF @ 0V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: SOD-882
• Supplier Device Package: CST2
• Operating Temperature - Junction: 150°C (Max)

Paket: SOD-882

1SS184S,LF(D

Toshiba Semiconductor and Storage

DIODE ARRAY GP 80V 100MA SC59

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 80V
• Current - Average Rectified (Io) (per Diode): 100mA
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 100mA
• Speed: Small Signal =< 200mA (Io), Any Speed
• Reverse Recovery Time (trr): 4ns
• Current - Reverse Leakage @ Vr: 500nA @ 80V
• Operating Temperature - Junction: 125°C (Max)
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: S-Mini

Paket: TO-236-3, SC-59, SOT-23-3

HN2D03F(TE85L,F)

Toshiba Semiconductor and Storage

DIODE ARRAY GP 400V 100MA SM6

• Diode Configuration: 3 Independent
• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 400V
• Current - Average Rectified (Io) (per Diode): 100mA
• Voltage - Forward (Vf) (Max) @ If: 1.3V @ 100mA
• Speed: Small Signal =< 200mA (Io), Any Speed
• Reverse Recovery Time (trr): 500ns
• Current - Reverse Leakage @ Vr: 100µA @ 400V
• Operating Temperature - Junction: 150°C (Max)
• Mounting Type: Surface Mount
• Package / Case: SC-74, SOT-457
• Supplier Device Package: SM6

Paket: SC-74, SOT-457

TAR5S45UTE85LF

Toshiba Semiconductor and Storage

IC REG LINEAR 4.5V 200MA UFV

• Output Configuration: Positive
• Output Type: Fixed
• Number of Regulators: 1
• Voltage - Input (Max): 15V
• Voltage - Output (Min/Fixed): 4.5V
• Voltage - Output (Max): -
• Voltage Dropout (Max): 0.2V @ 50mA
• Current - Output: 200mA
• Current - Quiescent (Iq): -
• Current - Supply (Max): 850µA
• PSRR: 70dB (1kHz)
• Control Features: Enable
• Protection Features: Over Current, Over Temperature
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 6-SMD (5 Leads), Flat Lead
• Supplier Device Package: UFV

Paket: 6-SMD (5 Leads), Flat Lead

TCV7103F(TE12L,Q)

Toshiba Semiconductor and Storage

IC REG BUCK ADJ 5A SYNC 8SOP-ADV

• Function: Step-Down
• Output Configuration: Positive
• Topology: Buck
• Output Type: Adjustable
• Number of Outputs: 1
• Voltage - Input (Min): 2.7V
• Voltage - Input (Max): 5.5V
• Voltage - Output (Min/Fixed): 0.8V
• Voltage - Output (Max): 5.5V
• Current - Output: 5A
• Frequency - Switching: 1MHz
• Synchronous Rectifier: Yes
• Operating Temperature: -40°C ~ 125°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-PowerVDFN
• Supplier Device Package: 8-SOP Advance (5x5)

Paket: 8-PowerVDFN

TBD62503AFWG,EL

Toshiba Semiconductor and Storage

IC LOAD SWITCH 7CH 0.3A 16PSOP

• Switch Type: General Purpose
• Number of Outputs: 7
• Ratio - Input:Output: 1:1
• Output Configuration: Low Side
• Output Type: N-Channel
• Interface: On/Off
• Voltage - Load: 50V (Max)
• Voltage - Supply (Vcc/Vdd): Not Required
• Current - Output (Max): 1.75A
• Rds On (Typ): -
• Input Type: Inverting
• Features: -
• Fault Protection: -
• Operating Temperature: -40°C ~ 85°C (TA)
• Package / Case: 16-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 16-SOP

Paket: 16-SOIC (0.154", 3.90mm Width)

TC62D722FG,EL

Toshiba Semiconductor and Storage

IC MOTOR DRIVER

• Type: -
• Topology: -
• Internal Switch(s): -
• Number of Outputs: -
• Voltage - Supply (Min): -
• Voltage - Supply (Max): -
• Voltage - Output: -
• Current - Output / Channel: -
• Frequency: -
• Dimming: -
• Applications: -
• Operating Temperature: -
• Mounting Type: Surface Mount
• Package / Case: 24-LSSOP (0.240", 6.00mm Width)
• Supplier Device Package: 24-SSOP

Paket: 24-LSSOP (0.240", 6.00mm Width)

TOTX1353(F)

Toshiba Semiconductor and Storage

FIBER OPTIC XMITTER 650NM

• Wavelength: 650nm
• Spectral Bandwidth: -
• Voltage - Forward (Vf) (Typ): 1.75V
• Current - DC Forward (If) (Max): 30mA
• Voltage - DC Reverse (Vr) (Max): -
• Capacitance: -
• Connector Type: TOSLINK

Paket: -

TLP3549(F

Toshiba Semiconductor and Storage

PHOTORELAY SPST-NO 600MA 600V

• Circuit: SPST-NO (1 Form A)
• Output Type: AC, DC
• On-State Resistance (Max): 2 Ohm
• Load Current: 600mA
• Voltage - Input: 1.64VDC
• Voltage - Load: 0 ~ 600 V
• Mounting Type: Through Hole
• Termination Style: PC Pin
• Package / Case: 8-DIP (0.300", 7.62mm)
• Supplier Device Package: 8-DIP
• Relay Type: Relay

Paket: 8-DIP (0.300", 7.62mm)

74HC594D

Toshiba Semiconductor and Storage

IC 8BIT SHIFT REGISTER 16SOIC

• Logic Type: Shift Register
• Output Type: Push-Pull
• Number of Elements: 1
• Number of Bits per Element: 8
• Function: -
• Voltage - Supply: 2 V ~ 6 V
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Surface Mount
• Package / Case: 16-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 16-SOIC

Paket: 16-SOIC (0.154", 3.90mm Width)

74VHCV07FT

Toshiba Semiconductor and Storage

IC BUFF NON-INVERT 5.5V 14TSSOPB

• Logic Type: Buffer, Non-Inverting
• Number of Elements: 6
• Number of Bits per Element: 1
• Input Type: Schmitt Trigger
• Output Type: Open Drain
• Current - Output High, Low: -, 16mA
• Voltage - Supply: 1.8 V ~ 5.5 V
• Operating Temperature: -40°C ~ 125°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 14-TSSOP (0.173", 4.40mm Width)
• Supplier Device Package: 14-TSSOPB

Paket: 14-TSSOP (0.173", 4.40mm Width)

TMPM3H6FWFG,A,J

Toshiba Semiconductor and Storage

TXZ FAMILY MCU

• Core Processor: -
• Core Size: -
• Speed: -
• Connectivity: -
• Peripherals: -
• Number of I/O: -
• Program Memory Size: -
• Program Memory Type: -
• EEPROM Size: -
• RAM Size: -
• Voltage - Supply (Vcc/Vdd): -
• Data Converters: -
• Oscillator Type: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: 100-LQFP
• Supplier Device Package: 100-LQFP (14x14)

Paket: 100-LQFP

74VHC9125FT

Toshiba Semiconductor and Storage

X34 PB-F UNIVERSAL SCHMITT BUFFE

• Logic Type: Buffer, Non-Inverting
• Number of Elements: 1
• Number of Bits per Element: 5
• Input Type: Schmitt Trigger
• Output Type: 3-State
• Current - Output High, Low: 8mA, 8mA
• Voltage - Supply: 2V ~ 5.5V
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Surface Mount
• Package / Case: 14-TSSOP (0.173", 4.40mm Width)
• Supplier Device Package: 14-TSSOPB

Paket: 14-TSSOP (0.173", 4.40mm Width)

TCR2EE29,LM(CT

Toshiba Semiconductor and Storage

200MA LDO VOUT2.9V DROPOUT180MV

• Output Configuration: -
• Output Type: -
• Number of Regulators: -
• Voltage - Input (Max): -
• Voltage - Output (Min/Fixed): -
• Voltage - Output (Max): -
• Voltage Dropout (Max): -
• Current - Output: -
• Current - Quiescent (Iq): -
• Current - Supply (Max): -
• PSRR: -
• Control Features: -
• Protection Features: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

Paket: -

RN1413-LXHF

Toshiba Semiconductor and Storage

TRANS PREBIAS NPN 50V SMINI

• Transistor Type: NPN - Pre-Biased
• Current - Collector (Ic) (Max): 100 mA
• Voltage - Collector Emitter Breakdown (Max): 50 V
• Resistor - Base (R1) (Ohms): 47 kOhms
• Resistor - Emitter Base (R2) (Ohms): -
• DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
• Current - Collector Cutoff (Max): 100nA (ICBO)
• Frequency - Transition: 250 MHz
• Power - Max: 200 mW
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: S-Mini

Paket: -

TB67S581FNG-EL

Toshiba Semiconductor and Storage

STEPPING MOTOR CONTROL DRIVER IC

• Motor Type - Stepper: Bipolar
• Motor Type - AC, DC: -
• Function: Driver - Fully Integrated, Control and Power Stage
• Output Configuration: Half Bridge (4)
• Interface: On/Off
• Technology: DMOS
• Step Resolution: 1, 1/2, 1/4, 1/8, 1/16, 1/32
• Applications: General Purpose
• Current - Output: 1.6A
• Voltage - Supply: 8.2V ~ 44V
• Voltage - Load: 8.2V ~ 44V
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 28-TSSOP (0.173", 4.40mm Width) Exposed Pad
• Supplier Device Package: 28-HTSSOP

Paket: -

TCR2EN31-LF-SE

Toshiba Semiconductor and Storage

LDO REG VOUT=3.1V IOUT=200MA

• Output Configuration: Positive
• Output Type: Fixed
• Number of Regulators: 1
• Voltage - Input (Max): 5.5V
• Voltage - Output (Min/Fixed): 3.1V
• Voltage - Output (Max): -
• Voltage Dropout (Max): 0.18V @ 150mA
• Current - Output: 200mA
• Current - Quiescent (Iq): 60 µA
• Current - Supply (Max): -
• PSRR: -
• Control Features: Enable
• Protection Features: Over Current
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 4-XFDFN Exposed Pad
• Supplier Device Package: 4-SDFN (0.8x0.8)

Paket: -

RN2107-LF-CT

Toshiba Semiconductor and Storage

TRANS PREBIAS PNP 50V 0.1A SSM

• Transistor Type: PNP - Pre-Biased
• Current - Collector (Ic) (Max): 100 mA
• Voltage - Collector Emitter Breakdown (Max): 50 V
• Resistor - Base (R1) (Ohms): 10 kOhms
• Resistor - Emitter Base (R2) (Ohms): 47 kOhms
• DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
• Current - Collector Cutoff (Max): 500nA
• Frequency - Transition: 200 MHz
• Power - Max: 100 mW
• Mounting Type: Surface Mount
• Package / Case: SC-75, SOT-416
• Supplier Device Package: SSM

Paket: -

TCR3DF32-LM-CT

Toshiba Semiconductor and Storage

PB-F SMV POINT DDRULATOR (SINGLE

• Output Configuration: Positive
• Output Type: Fixed
• Number of Regulators: 1
• Voltage - Input (Max): 5.5V
• Voltage - Output (Min/Fixed): 3.2V
• Voltage - Output (Max): -
• Voltage Dropout (Max): 0.25V @ 300mA
• Current - Output: 300mA
• Current - Quiescent (Iq): -
• Current - Supply (Max): -
• PSRR: 70dB (1kHz)
• Control Features: Enable
• Protection Features: Over Current, Over Temperature
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: SC-74A, SOT-753
• Supplier Device Package: SMV

Paket: -

RN2303-LXHF

Toshiba Semiconductor and Storage

TRANS PREBIAS PNP 50V 0.1A SC70

• Transistor Type: PNP - Pre-Biased
• Current - Collector (Ic) (Max): 100 mA
• Voltage - Collector Emitter Breakdown (Max): 50 V
• Resistor - Base (R1) (Ohms): 22 kOhms
• Resistor - Emitter Base (R2) (Ohms): 22 kOhms
• DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
• Current - Collector Cutoff (Max): 500nA
• Frequency - Transition: 200 MHz
• Power - Max: 100 mW
• Mounting Type: Surface Mount
• Package / Case: SC-70, SOT-323
• Supplier Device Package: SC-70

Paket: -