Toshiba Semiconductor and Storage Produkte

TK9A60D(STA4,Q,M)

Toshiba Semiconductor and Storage

MOSFET N-CH 600V 9A TO-220SIS

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600V
• Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 45W (Tc)
• Rds On (Max) @ Id, Vgs: 830 mOhm @ 4.5A, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220SIS
• Package / Case: TO-220-3 Full Pack

Paket: TO-220-3 Full Pack

SSM3K15AFS,LF

Toshiba Semiconductor and Storage

MOSFET N-CH 30V 0.1A SSM

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
• Vgs(th) (Max) @ Id: 1.5V @ 100µA
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: 13.5pF @ 3V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 100mW (Ta)
• Rds On (Max) @ Id, Vgs: 3.6 Ohm @ 10mA, 4V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: SSM
• Package / Case: SC-75, SOT-416

Paket: SC-75, SOT-416

TK20A60W5,S5VX

Toshiba Semiconductor and Storage

MOSFET N-CH 600V 20A TO-220

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600V
• Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4.5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 55nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 300V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 45W (Tc)
• Rds On (Max) @ Id, Vgs: 175 mOhm @ 10A, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220SIS
• Package / Case: TO-220-3 Full Pack, Isolated Tab

Paket: TO-220-3 Full Pack, Isolated Tab

SSM3K56CT,L3F

Toshiba Semiconductor and Storage

MOSFET NCH 20V 800MA CST3

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: 800mA (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
• Vgs(th) (Max) @ Id: 1V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 1nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 55pF @ 10V
• Vgs (Max): ±8V
• FET Feature: -
• Power Dissipation (Max): 500mW (Ta)
• Rds On (Max) @ Id, Vgs: 235 mOhm @ 800mA, 4.5V
• Operating Temperature: 150°C (TA)
• Mounting Type: Surface Mount
• Supplier Device Package: CST3
• Package / Case: 3-XFDFN

Paket: 3-XFDFN

2SA1020-Y,T6NSF(J

Toshiba Semiconductor and Storage

TRANS PNP 2A 50V TO226-3

• Transistor Type: PNP
• Current - Collector (Ic) (Max): 2A
• Voltage - Collector Emitter Breakdown (Max): 50V
• Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
• Current - Collector Cutoff (Max): 1µA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
• Power - Max: 900mW
• Frequency - Transition: 100MHz
• Operating Temperature: 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-226-3, TO-92-3 Long Body
• Supplier Device Package: TO-92MOD

Paket: TO-226-3, TO-92-3 Long Body

2SA1837,TOA1F(J

Toshiba Semiconductor and Storage

TRANS PNP 1A 230V TO220-3

• Transistor Type: PNP
• Current - Collector (Ic) (Max): 1A
• Voltage - Collector Emitter Breakdown (Max): 230V
• Vce Saturation (Max) @ Ib, Ic: 1.5V @ 50mA, 500mA
• Current - Collector Cutoff (Max): 1µA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
• Power - Max: 2W
• Frequency - Transition: 70MHz
• Operating Temperature: 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack
• Supplier Device Package: TO-220NIS

Paket: TO-220-3 Full Pack

2SC2859-O(TE85L,F)

Toshiba Semiconductor and Storage

TRANS NPN 30V 0.5A S-MINI

• Transistor Type: NPN
• Current - Collector (Ic) (Max): 500mA
• Voltage - Collector Emitter Breakdown (Max): 30V
• Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
• Current - Collector Cutoff (Max): 100nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 100mA, 1V
• Power - Max: 150mW
• Frequency - Transition: 300MHz
• Operating Temperature: 125°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: S-Mini

Paket: TO-236-3, SC-59, SOT-23-3

RN2102ACT(TPL3)

Toshiba Semiconductor and Storage

TRANS PREBIAS PNP 0.1W CST3

• Transistor Type: PNP - Pre-Biased
• Current - Collector (Ic) (Max): 80mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Resistor - Base (R1) (Ohms): 10k
• Resistor - Emitter Base (R2) (Ohms): 10k
• DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA
• Current - Collector Cutoff (Max): 500nA
• Frequency - Transition: -
• Power - Max: 100mW
• Mounting Type: Surface Mount
• Package / Case: SC-101, SOT-883
• Supplier Device Package: CST3

Paket: SC-101, SOT-883

CMH04(TE12L,Q,M)

Toshiba Semiconductor and Storage

DIODE GEN PURP 200V 1A MFLAT

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 200V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 980mV @ 1A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 35ns
• Current - Reverse Leakage @ Vr: 10µA @ 200V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: SOD-128
• Supplier Device Package: M-FLAT (2.4x3.8)
• Operating Temperature - Junction: -40°C ~ 150°C

Paket: SOD-128

74HCT14D(BJ)

Toshiba Semiconductor and Storage

IC INVERTER SCHMITT 6CH 14SOIC

• Logic Type: Inverter
• Number of Circuits: 6
• Number of Inputs: 6
• Features: Schmitt Trigger
• Voltage - Supply: 4.5 V ~ 5.5 V
• Current - Quiescent (Max): 1µA
• Current - Output High, Low: 4mA, 4mA
• Logic Level - Low: -
• Logic Level - High: -
• Max Propagation Delay @ V, Max CL: 31ns @ 5.5V, 50pF
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Surface Mount
• Supplier Device Package: 14-SOIC
• Package / Case: 14-SOIC (0.154", 3.90mm Width)

Paket: 14-SOIC (0.154", 3.90mm Width)

TC74VCX163245(EL,F

Toshiba Semiconductor and Storage

IC BUS TRANSCVR 16BIT 48TSSOP

• Logic Type: Transceiver, Inverting
• Number of Elements: 2
• Number of Bits per Element: 8
• Input Type: -
• Output Type: Push-Pull
• Current - Output High, Low: 24mA, 24mA; 18mA, 18mA
• Voltage - Supply: 1.65 V ~ 2.7 V, 2.3 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 48-TFSOP (0.240", 6.10mm Width)
• Supplier Device Package: 48-TSSOP

Paket: 48-TFSOP (0.240", 6.10mm Width)

TC74VCX125FTEL

Toshiba Semiconductor and Storage

IC BUFF NON-INVERT 3.6V 14TSSOP

• Logic Type: Buffer, Non-Inverting
• Number of Elements: 4
• Number of Bits per Element: 1
• Input Type: -
• Output Type: Push-Pull
• Current - Output High, Low: 24mA, 24mA
• Voltage - Supply: 1.2 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad
• Supplier Device Package: 14-TSSOP

Paket: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad

TD62003AFG,N

Toshiba Semiconductor and Storage

IC DRIVER DARL SNK TTL 7CH 16SOP

• Type: Driver
• Protocol: -
• Number of Drivers/Receivers: 7/0
• Duplex: -
• Receiver Hysteresis: -
• Data Rate: -
• Voltage - Supply: 0 V ~ 50 V
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 16-SOIC (0.173", 4.40mm Width)
• Supplier Device Package: 16-SOP

Paket: 16-SOIC (0.173", 4.40mm Width)

TD62084APG,N

Toshiba Semiconductor and Storage

IC DRIVER DARL SINK 8-CH 18-DIP

• Type: Driver
• Protocol: -
• Number of Drivers/Receivers: 8/0
• Duplex: -
• Receiver Hysteresis: -
• Data Rate: -
• Voltage - Supply: 6 V ~ 15 V
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Through Hole
• Package / Case: 18-DIP (0.300", 7.62mm)
• Supplier Device Package: 18-DIP

Paket: 18-DIP (0.300", 7.62mm)

TLP3409S(TP,E

Toshiba Semiconductor and Storage

PHOTORELAY 650MA 100V S-VSON4

• Circuit: SPST-NO (1 Form A)
• Output Type: AC, DC
• On-State Resistance (Max): 600 mOhm
• Load Current: 650mA
• Voltage - Input: 1.27VDC
• Voltage - Load: 0 ~ 100 V
• Mounting Type: Surface Mount
• Termination Style: SMD (SMT) Tab
• Package / Case: 4-SMD (0.079", 2.00mm)
• Supplier Device Package: S-VSON4
• Relay Type: Relay

Paket: 4-SMD (0.079", 2.00mm)

TLP3431(TP,F

Toshiba Semiconductor and Storage

PHOTORELAY; LOW RON; VSON4 PACKA

• Circuit: SPST-NO (1 Form A)
• Output Type: AC, DC
• On-State Resistance (Max): 1.2 Ohm
• Load Current: 450mA
• Voltage - Input: 1.27VDC
• Voltage - Load: 0 ~ 20 V
• Mounting Type: Surface Mount
• Termination Style: SMD (SMT) Tab
• Package / Case: 4-SMD (0.096", 2.45mm)
• Supplier Device Package: 4-VSON
• Relay Type: Relay

Paket: 4-SMD (0.096", 2.45mm)

TLP291(GRL-TP,SE

Toshiba Semiconductor and Storage

OPTOISOLATOR 3.75KV TRANS 4-SO

• Number of Channels: 1
• Voltage - Isolation: 3750Vrms
• Current Transfer Ratio (Min): 100% @ 5mA
• Current Transfer Ratio (Max): 200% @ 5mA
• Turn On / Turn Off Time (Typ): 3µs, 3µs
• Rise / Fall Time (Typ): 2µs, 3µs
• Input Type: DC
• Output Type: Transistor
• Voltage - Output (Max): 80V
• Current - Output / Channel: 50mA
• Voltage - Forward (Vf) (Typ): 1.25V
• Current - DC Forward (If) (Max): 50mA
• Vce Saturation (Max): 300mV
• Operating Temperature: -55°C ~ 110°C
• Mounting Type: Surface Mount
• Package / Case: 4-SOIC (0.179", 4.55mm)
• Supplier Device Package: 4-SO

Paket: 4-SOIC (0.179", 4.55mm)

TLP2168(TP,F)

Toshiba Semiconductor and Storage

OPTOISO 2.5KV 2CH OPN COL 8SO

• Number of Channels: 2
• Inputs - Side 1/Side 2: 2/0
• Voltage - Isolation: 2500Vrms
• Common Mode Transient Immunity (Min): 15kV/µs
• Input Type: DC
• Output Type: Open Collector
• Current - Output / Channel: 25mA
• Data Rate: 20MBd
• Propagation Delay tpLH / tpHL (Max): 60ns, 60ns
• Rise / Fall Time (Typ): 30ns, 30ns
• Voltage - Forward (Vf) (Typ): 1.57V
• Current - DC Forward (If) (Max): 25mA
• Voltage - Supply: 2.7 V ~ 5.5 V
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SO

Paket: 8-SOIC (0.154", 3.90mm Width)

TC74HC165AP(F)

Toshiba Semiconductor and Storage

IC 8-BIT SHIFT REGISTER 16DIP

• Logic Type: Shift Register
• Output Type: -
• Number of Elements: 1
• Number of Bits per Element: 8
• Function: Parallel or Serial to Serial
• Voltage - Supply: 2 V ~ 6 V
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Through Hole
• Package / Case: 16-DIP (0.300", 7.62mm)
• Supplier Device Package: 16-DIP

Paket: 16-DIP (0.300", 7.62mm)

74HC32D

Toshiba Semiconductor and Storage

IC GATE OR 4CH 2-INP 14SOIC

• Logic Type: OR Gate
• Number of Circuits: 4
• Number of Inputs: 2
• Features: -
• Voltage - Supply: 2 V ~ 6 V
• Current - Quiescent (Max): 1µA
• Current - Output High, Low: 5.2mA, 5.2mA
• Logic Level - Low: 0.5 V ~ 1.8 V
• Logic Level - High: 1.5 V ~ 4.2 V
• Max Propagation Delay @ V, Max CL: 13ns @ 6V, 50pF
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Surface Mount
• Supplier Device Package: 14-SOIC
• Package / Case: 14-SOIC (0.154", 3.90mm Width)

Paket: 14-SOIC (0.154", 3.90mm Width)

TC7WHU04FU,LJ(CT

Toshiba Semiconductor and Storage

IC INVERTER 3CH 3-INP SM8

• Logic Type: Inverter
• Number of Circuits: 3
• Number of Inputs: 3
• Features: -
• Voltage - Supply: 2 V ~ 5.5 V
• Current - Quiescent (Max): 2µA
• Current - Output High, Low: 8mA, 8mA
• Logic Level - Low: 0.3V
• Logic Level - High: 1.7V
• Max Propagation Delay @ V, Max CL: 7ns @ 5V, 50pF
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Supplier Device Package: SM8
• Package / Case: 8-TSSOP, 8-MSOP (0.110", 2.80mm Width)

Paket: 8-TSSOP, 8-MSOP (0.110", 2.80mm Width)

TCR3UG41A,LF

Toshiba Semiconductor and Storage

IC REG LIN 4.1V 300MA 4WCSP-F

• Output Configuration: Positive
• Output Type: Fixed
• Number of Regulators: 1
• Voltage - Input (Max): 5.5V
• Voltage - Output (Min/Fixed): 4.1V
• Voltage - Output (Max): -
• Voltage Dropout (Max): 0.228V @ 300mA
• Current - Output: 300mA
• Current - Quiescent (Iq): 680nA
• Current - Supply (Max): -
• PSRR: 70dB (1kHz)
• Control Features: Enable
• Protection Features: Inrush Current, Over Current, Thermal Shutdown
• Operating Temperature: -40°C ~ 85°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 4-XFBGA, WLCSP
• Supplier Device Package: 4-WCSP-F (0.65x0.65)

Paket: 4-XFBGA, WLCSP

TRS4E65H-S1Q

Toshiba Semiconductor and Storage

G3 SIC-SBD 650V 4A TO-220-2L

• Diode Type: SiC (Silicon Carbide) Schottky
• Voltage - DC Reverse (Vr) (Max): 650 V
• Current - Average Rectified (Io): 4A
• Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 4 A
• Speed: No Recovery Time > 500mA (Io)
• Reverse Recovery Time (trr): 0 ns
• Current - Reverse Leakage @ Vr: 55 µA @ 650 V
• Capacitance @ Vr, F: 263pF @ 1V, 1MHz
• Mounting Type: Through Hole
• Package / Case: TO-220-2
• Supplier Device Package: TO-220-2L
• Operating Temperature - Junction: 175°C

Paket: -

CMZ27-TE12L-Q-M

Toshiba Semiconductor and Storage

DIODE ZENER 27V 2W MFLAT

• Voltage - Zener (Nom) (Vz): 27 V
• Tolerance: ±10%
• Power - Max: 2 W
• Impedance (Max) (Zzt): 30 Ohms
• Current - Reverse Leakage @ Vr: 10 µA @ 19 V
• Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SOD-128
• Supplier Device Package: M-FLAT (2.4x3.8)

Paket: -

RN2116MFV-L3F

Toshiba Semiconductor and Storage

TRANS PREBIAS PNP 50V 0.1A VESM

• Transistor Type: PNP - Pre-Biased
• Current - Collector (Ic) (Max): 100 mA
• Voltage - Collector Emitter Breakdown (Max): 50 V
• Resistor - Base (R1) (Ohms): 4.7 kOhms
• Resistor - Emitter Base (R2) (Ohms): 10 kOhms
• DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
• Current - Collector Cutoff (Max): 500nA
• Frequency - Transition: -
• Power - Max: 150 mW
• Mounting Type: Surface Mount
• Package / Case: SOT-723
• Supplier Device Package: VESM

Paket: -

RN1701-LF

Toshiba Semiconductor and Storage

NPNX2 BRT Q1BSR4.7KOHM Q1BER4.7K

• Transistor Type: 2 NPN - Pre-Biased (Dual)
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Resistor - Base (R1) (Ohms): 4.7kOhms
• Resistor - Emitter Base (R2) (Ohms): 4.7kOhms
• DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
• Current - Collector Cutoff (Max): 500nA
• Frequency - Transition: 250MHz
• Power - Max: 200mW
• Mounting Type: Surface Mount
• Package / Case: 5-TSSOP, SC-70-5, SOT-353
• Supplier Device Package: USV

Paket: -

RN2407-LXHF

Toshiba Semiconductor and Storage

TRANS PREBIAS PNP 50V SMINI

• Transistor Type: PNP - Pre-Biased
• Current - Collector (Ic) (Max): 100 mA
• Voltage - Collector Emitter Breakdown (Max): 50 V
• Resistor - Base (R1) (Ohms): 10 kOhms
• Resistor - Emitter Base (R2) (Ohms): 47 kOhms
• DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
• Current - Collector Cutoff (Max): 500nA
• Frequency - Transition: 200 MHz
• Power - Max: 200 mW
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: S-Mini

Paket: -

TJ8S06M3L-LXHQ

Toshiba Semiconductor and Storage

MOSFET P-CH 60V 8A DPAK

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60 V
• Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
• Vgs(th) (Max) @ Id: 3V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 890 pF @ 10 V
• Vgs (Max): +10V, -20V
• FET Feature: -
• Power Dissipation (Max): 27W (Tc)
• Rds On (Max) @ Id, Vgs: 104mOhm @ 4A, 10V
• Operating Temperature: 175°C
• Mounting Type: Surface Mount
• Supplier Device Package: DPAK+
• Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63

Paket: -