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Toshiba Semiconductor and Storage Produkte

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TPCA8056-H,LQ(M
Toshiba Semiconductor and Storage

MOSFET N-CH 30V 48A 8SOP-ADV

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 48A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.3V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 74nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 6200pF @ 10V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.6W (Ta), 63W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.2 mOhm @ 24A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SOP Advance (5x5)
  • Package / Case: 8-PowerVDFN
Paket: 8-PowerVDFN
Lager3.248
TK20S04K3L(T6L1,NQ
Toshiba Semiconductor and Storage

MOSFET N-CH 40V 20A DPAK-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 820pF @ 10V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 38W (Tc)
  • Rds On (Max) @ Id, Vgs: 14 mOhm @ 10A, 10V
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DPAK+
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Paket: TO-252-3, DPak (2 Leads + Tab), SC-63
Lager5.168
2SC2229-Y(T6ONK1FM
Toshiba Semiconductor and Storage

TRANS NPN 50MA 150V TO226-3

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 50mA
  • Voltage - Collector Emitter Breakdown (Max): 150V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
  • Power - Max: 800mW
  • Frequency - Transition: 120MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 Long Body
  • Supplier Device Package: TO-92MOD
Paket: TO-226-3, TO-92-3 Long Body
Lager4.400
HN1C01FE-GR,LF
Toshiba Semiconductor and Storage

TRANS 2NPN 50V 0.15A ES6

  • Transistor Type: 2 NPN (Dual)
  • Current - Collector (Ic) (Max): 150mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
  • Power - Max: 100mW
  • Frequency - Transition: 80MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: ES6
Paket: SOT-563, SOT-666
Lager28.986
RN2969FE(TE85L,F)
Toshiba Semiconductor and Storage

TRANS 2PNP PREBIAS 0.1W ES6

  • Transistor Type: 2 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 47k
  • Resistor - Emitter Base (R2) (Ohms): 22k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • Frequency - Transition: 200MHz
  • Power - Max: 100mW
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: ES6
Paket: SOT-563, SOT-666
Lager7.792
1SV277TPH3F
Toshiba Semiconductor and Storage

DIODE VARICAP VCO UHF USC

  • Capacitance @ Vr, F: 2.35pF @ 4V, 1MHz
  • Capacitance Ratio: 2.3
  • Capacitance Ratio Condition: C1/C4
  • Voltage - Peak Reverse (Max): 10V
  • Diode Type: Single
  • Q @ Vr, F: -
  • Operating Temperature: 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-76, SOD-323
  • Supplier Device Package: USC
Paket: SC-76, SOD-323
Lager26.088
TBAV99,LM
Toshiba Semiconductor and Storage

DIODE ARRAY GP 80V 100MA SOT23-3

  • Diode Configuration: 1 Pair Series Connection
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 80V
  • Current - Average Rectified (Io) (per Diode): 100mA
  • Voltage - Forward (Vf) (Max) @ If: 1.25V @ 150mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): 4ns
  • Current - Reverse Leakage @ Vr: 500nA @ 80V
  • Operating Temperature - Junction: 125°C (Max)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23-3
Paket: TO-236-3, SC-59, SOT-23-3
Lager23.790
TA58M12F(TE16L1,NQ
Toshiba Semiconductor and Storage

IC REG LINEAR 12V 500MA PW-MOLD

  • Output Configuration: Positive
  • Output Type: Fixed
  • Number of Regulators: 1
  • Voltage - Input (Max): 29V
  • Voltage - Output (Min/Fixed): 12V
  • Voltage - Output (Max): -
  • Voltage Dropout (Max): 0.65V @ 500mA
  • Current - Output: 500mA
  • Current - Quiescent (Iq): -
  • Current - Supply (Max): 1.2mA ~ 80mA
  • PSRR: -
  • Control Features: -
  • Protection Features: Over Current, Over Temperature, Reverse Polarity
  • Operating Temperature: -40°C ~ 105°C
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: PW-MOLD
Paket: TO-252-3, DPak (2 Leads + Tab), SC-63
Lager2.768
TBD62083AFG
Toshiba Semiconductor and Storage

IC LOAD SWITCH 8CH 0.5A 18SOP

  • Switch Type: General Purpose
  • Number of Outputs: 8
  • Ratio - Input:Output: 1:1
  • Output Configuration: Low Side
  • Output Type: N-Channel
  • Interface: On/Off
  • Voltage - Load: 50V (Max)
  • Voltage - Supply (Vcc/Vdd): Not Required
  • Current - Output (Max): -
  • Rds On (Typ): -
  • Input Type: Inverting
  • Features: -
  • Fault Protection: -
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Package / Case: 18-SOIC (0.276", 7.00mm Width)
  • Supplier Device Package: 18-SOP
Paket: 18-SOIC (0.276", 7.00mm Width)
Lager5.376
TCK108AF,LF
Toshiba Semiconductor and Storage

IC POWER DIST LOAD SWITCH SMV

  • Switch Type: General Purpose
  • Number of Outputs: 1
  • Ratio - Input:Output: 1:1
  • Output Configuration: High Side
  • Output Type: P-Channel
  • Interface: On/Off
  • Voltage - Load: 1.1 V ~ 5.5 V
  • Voltage - Supply (Vcc/Vdd): Not Required
  • Current - Output (Max): 1A
  • Rds On (Typ): 63 mOhm
  • Input Type: Inverting
  • Features: Load Discharge, Slew Rate Controlled
  • Fault Protection: -
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Package / Case: SC-74A, SOT-753
  • Supplier Device Package: 5-SMV, SOT-25, SC-74A
Paket: SC-74A, SOT-753
Lager22.860
TB67S102AFNG,EL
Toshiba Semiconductor and Storage

IC STEP MOTOR DRVR PAR 48HTSSOP

  • Motor Type - Stepper: Bipolar
  • Motor Type - AC, DC: -
  • Function: Driver - Fully Integrated, Control and Power Stage
  • Output Configuration: Half Bridge (4)
  • Interface: Parallel
  • Technology: Power MOSFET
  • Step Resolution: 1, 1/2, 1/4
  • Applications: General Purpose
  • Current - Output: 3A
  • Voltage - Supply: 4.75 V ~ 5.25 V
  • Voltage - Load: 10 V ~ 47 V
  • Operating Temperature: -20°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 48-TFSOP (0.240", 6.10mm Width) Exposed Pad
  • Supplier Device Package: 48-TSSOP
Paket: 48-TFSOP (0.240", 6.10mm Width) Exposed Pad
Lager22.092
TB62261FTAG,EL
Toshiba Semiconductor and Storage

IC MOTOR DRIVER PAR 36WQFN

  • Motor Type - Stepper: Bipolar
  • Motor Type - AC, DC: Brushed DC
  • Function: Driver - Fully Integrated, Control and Power Stage
  • Output Configuration: Half Bridge (4)
  • Interface: Parallel
  • Technology: Power MOSFET
  • Step Resolution: 1, 1/2, 1/4
  • Applications: Appliance
  • Current - Output: 800mA
  • Voltage - Supply: 4.75 V ~ 5.25 V
  • Voltage - Load: 10 V ~ 35 V
  • Operating Temperature: -20°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 36-WFQFN Exposed Pad
  • Supplier Device Package: 36-WQFN (6x6)
Paket: 36-WFQFN Exposed Pad
Lager29.226
74VHCT573AFT(BE)
Toshiba Semiconductor and Storage

IC LATCH OCTAL D-TYPE 20-TSSOP

  • Logic Type: D-Type Latch
  • Circuit: 8:8
  • Output Type: Tri-State
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Independent Circuits: 1
  • Delay Time - Propagation: 8.5ns
  • Current - Output High, Low: 8mA, 8mA
  • Operating Temperature: -40°C ~ 85°C
  • Mounting Type: Surface Mount
  • Package / Case: 20-TSSOP (0.173", 4.40mm Width)
  • Supplier Device Package: 20-TSSOP
Paket: 20-TSSOP (0.173", 4.40mm Width)
Lager7.088
TC7WH00FU,LJ(CT
Toshiba Semiconductor and Storage

IC GATE NAND 2CH 2-INP SM8

  • Logic Type: NAND Gate
  • Number of Circuits: 2
  • Number of Inputs: 2
  • Features: -
  • Voltage - Supply: 2 V ~ 5.5 V
  • Current - Quiescent (Max): 2µA
  • Current - Output High, Low: 8mA, 8mA
  • Logic Level - Low: 0.5V
  • Logic Level - High: 1.5V
  • Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF
  • Operating Temperature: -40°C ~ 85°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: SM8
  • Package / Case: 8-TSSOP, 8-MSOP (0.110", 2.80mm Width)
Paket: 8-TSSOP, 8-MSOP (0.110", 2.80mm Width)
Lager2.960
TLP265J(TPR,E
Toshiba Semiconductor and Storage

OPTOISOLATOR 3.75KV TRIAC 6SO 4L

  • Output Type: Triac
  • Zero Crossing Circuit: No
  • Number of Channels: 1
  • Voltage - Isolation: 3750Vrms
  • Voltage - Off State: 600V
  • Static dV/dt (Min): 500V/µs (Typ)
  • Current - LED Trigger (Ift) (Max): 10mA
  • Current - On State (It (RMS)) (Max): 70mA
  • Current - Hold (Ih): 1mA (Typ)
  • Turn On Time: 100µs (Max)
  • Voltage - Forward (Vf) (Typ): 1.27V
  • Current - DC Forward (If) (Max): 30mA
  • Operating Temperature: -40°C ~ 100°C
  • Mounting Type: Surface Mount
  • Package / Case: 6-SMD (4 Leads), Gull Wing
  • Supplier Device Package: 6-SO, 4 Lead
  • Approvals: cUR, UR
Paket: 6-SMD (4 Leads), Gull Wing
Lager2.250
TLP2161(F)
Toshiba Semiconductor and Storage

OPTOISO 2.5KV 2CH PUSH PULL 8SO

  • Number of Channels: 2
  • Inputs - Side 1/Side 2: 2/0
  • Voltage - Isolation: 2500Vrms
  • Common Mode Transient Immunity (Min): 20kV/µs
  • Input Type: DC
  • Output Type: Push-Pull, Totem Pole
  • Current - Output / Channel: 10mA
  • Data Rate: 15MBd
  • Propagation Delay tpLH / tpHL (Max): 80ns, 80ns
  • Rise / Fall Time (Typ): 3ns, 3ns
  • Voltage - Forward (Vf) (Typ): 1.5V
  • Current - DC Forward (If) (Max): 10mA
  • Voltage - Supply: 2.7 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 125°C
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
Paket: 8-SOIC (0.154", 3.90mm Width)
Lager43.434
TBD62381APG
Toshiba Semiconductor and Storage

TRANSISTOR ARRAY INTERFACE DRIVE

  • Switch Type: General Purpose
  • Number of Outputs: 8
  • Ratio - Input:Output: 8:8
  • Output Configuration: High Side
  • Output Type: N-Channel
  • Interface: -
  • Voltage - Load: 0 ~ 50 V
  • Voltage - Supply (Vcc/Vdd): 4.5 V ~ 5.5 V
  • Current - Output (Max): 500mA
  • Rds On (Typ): 1 Ohm
  • Input Type: Inverting
  • Features: -
  • Fault Protection: -
  • Operating Temperature: -40°C ~ 85°C
  • Package / Case: 18-DIP (0.300", 7.62mm)
  • Supplier Device Package: 18-DIP
Paket: 18-DIP (0.300", 7.62mm)
Lager16.278
TCR2LE21,LM(CT
Toshiba Semiconductor and Storage

200MA LDO VOUT2.1V DROPOUT220MV

  • Output Configuration: -
  • Output Type: -
  • Number of Regulators: -
  • Voltage - Input (Max): -
  • Voltage - Output (Min/Fixed): -
  • Voltage - Output (Max): -
  • Voltage Dropout (Max): -
  • Current - Output: -
  • Current - Quiescent (Iq): -
  • Current - Supply (Max): -
  • PSRR: -
  • Control Features: -
  • Protection Features: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
Paket: -
Lager7.200
GT15J341-S4X
Toshiba Semiconductor and Storage

IGBT 600V 15A TO220SIS

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 15 A
  • Current - Collector Pulsed (Icm): 60 A
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 15A
  • Power - Max: 30 W
  • Switching Energy: 300µJ (on), 300µJ (off)
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: 60ns/170ns
  • Test Condition: 300V, 15A, 33Ohm, 15V
  • Reverse Recovery Time (trr): 80 ns
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 Full Pack
  • Supplier Device Package: TO-220SIS
Paket: -
Lager60
1SS385FV-L3F
Toshiba Semiconductor and Storage

DIODE SCHOTTKY 10V 100MA VESM

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 10 V
  • Current - Average Rectified (Io): 100mA
  • Voltage - Forward (Vf) (Max) @ If: 500 mV @ 100 mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 20 µA @ 10 V
  • Capacitance @ Vr, F: 20pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SOT-723
  • Supplier Device Package: VESM
  • Operating Temperature - Junction: 125°C (Max)
Paket: -
Lager23.991
7UL1G04NX-ELF-S
Toshiba Semiconductor and Storage

L-MOS LVP IC XSON6 VCC:0.9V-3.6

  • Logic Type: Inverter
  • Number of Circuits: 1
  • Number of Inputs: 1
  • Features: -
  • Voltage - Supply: 0.9V ~ 3.6V
  • Current - Quiescent (Max): 1 µA
  • Current - Output High, Low: 8mA, 8mA
  • Logic Level - Low: 0.7V ~ 0.8V
  • Logic Level - High: 1.7V ~ 2V
  • Max Propagation Delay @ V, Max CL: 5.3ns @ 3.3V, 30pF
  • Operating Temperature: -40°C ~ 125°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: 6-MP6D (1.45x1)
  • Package / Case: 6-XFDFN
Paket: -
Lager30.000
SSM3J371R-LXHF
Toshiba Semiconductor and Storage

SMOS P-CH VDSS:-20V VGSS:-8/+6V

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20 V
  • Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 10.4 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 630 pF @ 10 V
  • Vgs (Max): +6V, -8V
  • FET Feature: -
  • Power Dissipation (Max): 1W (Ta)
  • Rds On (Max) @ Id, Vgs: 55mOhm @ 3A, 4.5V
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23F
  • Package / Case: SOT-23-3 Flat Leads
Paket: -
Lager39.117
RN2131MFV-L3F
Toshiba Semiconductor and Storage

TRANS PREBIAS PNP 50V 0.1A VESM

  • Transistor Type: PNP - Pre-Biased
  • Current - Collector (Ic) (Max): 100 mA
  • Voltage - Collector Emitter Breakdown (Max): 50 V
  • Resistor - Base (R1) (Ohms): 100 kOhms
  • Resistor - Emitter Base (R2) (Ohms): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • Frequency - Transition: -
  • Power - Max: 150 mW
  • Mounting Type: Surface Mount
  • Package / Case: SOT-723
  • Supplier Device Package: VESM
Paket: -
Lager23.700
CUHS15F60-H3F
Toshiba Semiconductor and Storage

DIODE SCHOTTKY 60V 1.5A US2H

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 60 V
  • Current - Average Rectified (Io): 1.5A
  • Voltage - Forward (Vf) (Max) @ If: 730 mV @ 1.5 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 50 µA @ 60 V
  • Capacitance @ Vr, F: 130pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: 2-SMD, Flat Lead
  • Supplier Device Package: US2H
  • Operating Temperature - Junction: 150°C
Paket: -
Lager8.970
2SC4117-GR-LF
Toshiba Semiconductor and Storage

TRANS NPN 120V 0.1A SC70

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 100 mA
  • Voltage - Collector Emitter Breakdown (Max): 120 V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
  • Power - Max: 100 mW
  • Frequency - Transition: 100MHz
  • Operating Temperature: 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: SC-70
Paket: -
Lager35.607
TK2R4E08QM-S1X
Toshiba Semiconductor and Storage

UMOS10 TO-220AB 80V 2.4MOHM

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 80 V
  • Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 2.2mA
  • Gate Charge (Qg) (Max) @ Vgs: 178 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 40 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 300W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.44mOhm @ 50A, 10V
  • Operating Temperature: 175°C
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220
  • Package / Case: TO-220-3
Paket: -
Lager528
RN4906-LXHF-CT
Toshiba Semiconductor and Storage

AUTO AEC-Q 2-IN-1 (POINT-SYM) PN

  • Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 4.7kOhms
  • Resistor - Emitter Base (R2) (Ohms): 47kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: 200MHz, 250MHz
  • Power - Max: 200mW
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: US6
Paket: -
Lager8.100
RN4907-LXHF-CT
Toshiba Semiconductor and Storage

AUTO AEC-Q 2-IN-1 (POINT-SYM) PN

  • Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 10kOhms
  • Resistor - Emitter Base (R2) (Ohms): 47kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: 200MHz, 250MHz
  • Power - Max: 200mW
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: US6
Paket: -
Lager9.000