Page 38 - Transistoren - Bipolar (BJT) - HF | Diskrete Halbleiterprodukte

Teilenummer	Hersteller	Beschreibung	Paket	Lager	Voltage - Collector Emitter Breakdown (Max)	Frequency - Transition	Noise Figure (dB Typ @ f)	Gain	Power - Max	DC Current Gain (hFE) (Min) @ Ic, Vce	Current - Collector (Ic) (Max)	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
BFG 19S E6327	Infineon Technologies	TRANSISTOR RF NPN 15V SOT-223 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 15V Frequency - Transition: 5.5GHz Noise Figure (dB Typ @ f): 2dB ~ 3dB @ 900MHz ~ 1.8GHz Gain: 14dB ~ 8.5dB Power - Max: 1W DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 70mA, 8V Current - Collector (Ic) (Max): 210mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-261-4, TO-261AA Supplier Device Package: PG-SOT223-4	Paket: TO-261-4, TO-261AA	Lager6.384	15V	5.5GHz	2dB ~ 3dB @ 900MHz ~ 1.8GHz	14dB ~ 8.5dB	1W	70 @ 70mA, 8V	210mA	150°C (TJ)	Surface Mount	TO-261-4, TO-261AA	PG-SOT223-4
BF 770A E6327	Infineon Technologies	TRANSISTOR RF NPN 12V SOT-23 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 6GHz Noise Figure (dB Typ @ f): 1.5dB ~ 2.6dB @ 900MHz ~ 1.8GHz Gain: 9.5dB ~ 14.5dB Power - Max: 300mW DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 30mA, 8V Current - Collector (Ic) (Max): 90mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: PG-SOT23-3	Paket: TO-236-3, SC-59, SOT-23-3	Lager5.072	12V	6GHz	1.5dB ~ 2.6dB @ 900MHz ~ 1.8GHz	9.5dB ~ 14.5dB	300mW	70 @ 30mA, 8V	90mA	150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	PG-SOT23-3
NE67739-T1-A	CEL	RF TRANSISTOR NPN SOT-143 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 6V Frequency - Transition: 14.5GHz Noise Figure (dB Typ @ f): 1.5dB @ 2GHz Gain: 12dB Power - Max: 200mW DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 20mA, 3V Current - Collector (Ic) (Max): 50mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-253-4, TO-253AA Supplier Device Package: SOT-143	Paket: TO-253-4, TO-253AA	Lager7.552	6V	14.5GHz	1.5dB @ 2GHz	12dB	200mW	75 @ 20mA, 3V	50mA	150°C (TJ)	Surface Mount	TO-253-4, TO-253AA	SOT-143
AT-64023	Broadcom Limited	TRANS NPN BIPO 20V 200MA 230-SMD Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 20V Frequency - Transition: - Noise Figure (dB Typ @ f): - Gain: - Power - Max: 3W DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 110mA, 8V Current - Collector (Ic) (Max): 200mA Operating Temperature: 200°C (TJ) Mounting Type: Surface Mount Package / Case: 4-SMD (230 mil BeO) Supplier Device Package: 230 mil Be0	Paket: 4-SMD (230 mil BeO)	Lager7.472	20V	-	-	-	3W	20 @ 110mA, 8V	200mA	200°C (TJ)	Surface Mount	4-SMD (230 mil BeO)	230 mil Be0
NE68039-T1-A	CEL	RF TRANSISTOR NPN SOT-143 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 10V Frequency - Transition: 10GHz Noise Figure (dB Typ @ f): 1.8dB @ 2GHz Gain: 11dB Power - Max: 200mW DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 6V Current - Collector (Ic) (Max): 35mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-253-4, TO-253AA Supplier Device Package: SOT-143	Paket: TO-253-4, TO-253AA	Lager2.384	10V	10GHz	1.8dB @ 2GHz	11dB	200mW	50 @ 10mA, 6V	35mA	150°C (TJ)	Surface Mount	TO-253-4, TO-253AA	SOT-143
KSC1674YTA	Fairchild/ON Semiconductor	TRANSISTOR NPN 20V 20MA TO-92 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 20V Frequency - Transition: 600MHz Noise Figure (dB Typ @ f): 3dB ~ 5dB @ 100MHz Gain: - Power - Max: 250mW DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V Current - Collector (Ic) (Max): 20mA Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3	Paket: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	Lager5.328	20V	600MHz	3dB ~ 5dB @ 100MHz	-	250mW	120 @ 1mA, 6V	20mA	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	TO-92-3
KSC2755YMTF	Fairchild/ON Semiconductor	TRANSISTOR NPN 30V 20MA SOT-23 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 30V Frequency - Transition: 600MHz Noise Figure (dB Typ @ f): 0.3dB @ 200MHz Gain: 20dB ~ 23dB Power - Max: 150mW DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 3mA, 10V Current - Collector (Ic) (Max): 20mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3 (TO-236)	Paket: TO-236-3, SC-59, SOT-23-3	Lager2.052.000	30V	600MHz	0.3dB @ 200MHz	20dB ~ 23dB	150mW	120 @ 3mA, 10V	20mA	150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23-3 (TO-236)
NESG2101M05-A	CEL	TRANS NPN 2GHZ M05 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 5V Frequency - Transition: 17GHz Noise Figure (dB Typ @ f): 0.6dB ~ 1.2dB @ 1GHz ~ 2GHz Gain: 11dB ~ 19dB Power - Max: 500mW DC Current Gain (hFE) (Min) @ Ic, Vce: 130 @ 15mA, 2V Current - Collector (Ic) (Max): 100mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-343F Supplier Device Package: M05	Paket: SOT-343F	Lager2.880	5V	17GHz	0.6dB ~ 1.2dB @ 1GHz ~ 2GHz	11dB ~ 19dB	500mW	130 @ 15mA, 2V	100mA	150°C (TJ)	Surface Mount	SOT-343F	M05
AT-41511-TR1	Broadcom Limited	IC TRANS NPN GP BIPOLAR SOT-143 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: - Noise Figure (dB Typ @ f): 1dB ~ 1.7dB @ 900MHz ~ 2.4GHz Gain: 11dB ~ 15.5dB Power - Max: 225mW DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V Current - Collector (Ic) (Max): 50mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-253-4, TO-253AA Supplier Device Package: SOT-143	Paket: TO-253-4, TO-253AA	Lager506.136	12V	-	1dB ~ 1.7dB @ 900MHz ~ 2.4GHz	11dB ~ 15.5dB	225mW	30 @ 5mA, 5V	50mA	150°C (TJ)	Surface Mount	TO-253-4, TO-253AA	SOT-143
2SC4627J0L	Panasonic Electronic Components	TRANS NPN HF 20VCEO 15MA SS-MINI Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 20V Frequency - Transition: 650MHz Noise Figure (dB Typ @ f): 3.3dB @ 100MHz Gain: 24dB Power - Max: 125mW DC Current Gain (hFE) (Min) @ Ic, Vce: 65 @ 1mA, 6V Current - Collector (Ic) (Max): 15mA Operating Temperature: 125°C (TJ) Mounting Type: Surface Mount Package / Case: SC-89, SOT-490 Supplier Device Package: SSMini3-F1	Paket: SC-89, SOT-490	Lager823.080	20V	650MHz	3.3dB @ 100MHz	24dB	125mW	65 @ 1mA, 6V	15mA	125°C (TJ)	Surface Mount	SC-89, SOT-490	SSMini3-F1
BFS520,135	NXP	TRANS NPN 15V 70MA 9GHZ SOT323 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 15V Frequency - Transition: 9GHz Noise Figure (dB Typ @ f): 1.1dB ~ 2.1dB @ 900MHz Gain: - Power - Max: 300mW DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 20mA, 6V Current - Collector (Ic) (Max): 70mA Operating Temperature: 175°C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: SOT-323-3	Paket: SC-70, SOT-323	Lager6.608	15V	9GHz	1.1dB ~ 2.1dB @ 900MHz	-	300mW	60 @ 20mA, 6V	70mA	175°C (TJ)	Surface Mount	SC-70, SOT-323	SOT-323-3
BFG540,215	NXP	TRANS RF 15V 9GHZ SOT143B Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 15V Frequency - Transition: 9GHz Noise Figure (dB Typ @ f): 1.3dB ~ 1.8dB @ 900MHz Gain: - Power - Max: 400mW DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 40mA, 8V Current - Collector (Ic) (Max): 120mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-253-4, TO-253AA Supplier Device Package: SOT-143B	Paket: TO-253-4, TO-253AA	Lager5.600	15V	9GHz	1.3dB ~ 1.8dB @ 900MHz	-	400mW	60 @ 40mA, 8V	120mA	150°C (TJ)	Surface Mount	TO-253-4, TO-253AA	SOT-143B
BFG67,235	NXP	TRANS RF NPN 8GHZ 10V SOT143B Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 10V Frequency - Transition: 8GHz Noise Figure (dB Typ @ f): 1.3dB ~ 3dB @ 1GHz ~ 2GHz Gain: - Power - Max: 380mW DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 15mA, 5V Current - Collector (Ic) (Max): 50mA Operating Temperature: 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-253-4, TO-253AA Supplier Device Package: SOT-143B	Paket: TO-253-4, TO-253AA	Lager3.104	10V	8GHz	1.3dB ~ 3dB @ 1GHz ~ 2GHz	-	380mW	60 @ 15mA, 5V	50mA	175°C (TJ)	Surface Mount	TO-253-4, TO-253AA	SOT-143B
TPR1000	Microsemi Corporation	TRANS RF BIPO 2900W 80A 55KV1 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 65V Frequency - Transition: 1.09GHz Noise Figure (dB Typ @ f): - Gain: 6dB Power - Max: 2900W DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 1A, 5V Current - Collector (Ic) (Max): 80A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: 55KV Supplier Device Package: 55KV	Paket: 55KV	Lager5.152	65V	1.09GHz	-	6dB	2900W	10 @ 1A, 5V	80A	200°C (TJ)	Chassis Mount	55KV	55KV
2001	Microsemi Corporation	TRANS HBT RF BIPOLAR 55BT Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 50V Frequency - Transition: 2GHz Noise Figure (dB Typ @ f): - Gain: 9.5dB Power - Max: 5W DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 5V Current - Collector (Ic) (Max): 250mA Operating Temperature: - Mounting Type: Chassis Mount Package / Case: 55BT Supplier Device Package: 55BT	Paket: 55BT	Lager3.904	50V	2GHz	-	9.5dB	5W	20 @ 100mA, 5V	250mA	-	Chassis Mount	55BT	55BT
2N5179	Microsemi Corporation	TRANS RF NPN 12V 50MA TO72 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 200MHz Noise Figure (dB Typ @ f): 4.5dB @ 200MHz Gain: 20dB Power - Max: 300mW DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 3mA, 1V Current - Collector (Ic) (Max): 50mA Operating Temperature: - Mounting Type: Through Hole Package / Case: TO-206AF, TO-72-4 Metal Can Supplier Device Package: TO-72	Paket: TO-206AF, TO-72-4 Metal Can	Lager17.928	12V	200MHz	4.5dB @ 200MHz	20dB	300mW	25 @ 3mA, 1V	50mA	-	Through Hole	TO-206AF, TO-72-4 Metal Can	TO-72
MCH4021-TL-E	ON Semiconductor	TRANS NPN 8V 150MA MCPH4 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 8V Frequency - Transition: 16GHz Noise Figure (dB Typ @ f): 1.2dB @ 1GHz Gain: 17.5dB Power - Max: 400mW DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 50mA, 5V Current - Collector (Ic) (Max): 150mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 4-SMD, Flat Leads Supplier Device Package: 4-MCPH	Paket: 4-SMD, Flat Leads	Lager3.344	8V	16GHz	1.2dB @ 1GHz	17.5dB	400mW	60 @ 50mA, 5V	150mA	150°C (TJ)	Surface Mount	4-SMD, Flat Leads	4-MCPH
MRF454	M/A-Com Technology Solutions	TRANS RF NPN 25V 20A 211-11 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 25V Frequency - Transition: - Noise Figure (dB Typ @ f): - Gain: 12dB Power - Max: 80W DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 5A, 5V Current - Collector (Ic) (Max): 20A Operating Temperature: - Mounting Type: Chassis Mount Package / Case: 211-11, Style 2 Supplier Device Package: 211-11, Style 2	Paket: 211-11, Style 2	Lager7.504	25V	-	-	12dB	80W	40 @ 5A, 5V	20A	-	Chassis Mount	211-11, Style 2	211-11, Style 2
BFP 193 E6327	Infineon Technologies	TRANSISTOR NPN RF 12V SOT-143 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 8GHz Noise Figure (dB Typ @ f): 1dB ~ 1.6dB @ 900MHz ~ 1.8GHz Gain: 12dB ~ 18dB Power - Max: 580mW DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 30mA, 8V Current - Collector (Ic) (Max): 80mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-253-4, TO-253AA Supplier Device Package: PG-SOT143-4	Paket: TO-253-4, TO-253AA	Lager3.408	12V	8GHz	1dB ~ 1.6dB @ 900MHz ~ 1.8GHz	12dB ~ 18dB	580mW	70 @ 30mA, 8V	80mA	150°C (TJ)	Surface Mount	TO-253-4, TO-253AA	PG-SOT143-4
BFU530WX	NXP	TRANS RF NPN 12V 40MA SOT-323 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 11GHz Noise Figure (dB Typ @ f): 0.6dB @ 900MHz Gain: 18.5dB Power - Max: 450mW DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 8V Current - Collector (Ic) (Max): 40mA Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: SOT-323-3	Paket: SC-70, SOT-323	Lager6.496	12V	11GHz	0.6dB @ 900MHz	18.5dB	450mW	60 @ 10mA, 8V	40mA	-40°C ~ 150°C (TJ)	Surface Mount	SC-70, SOT-323	SOT-323-3
2SC4915-O,LF	Toshiba Semiconductor and Storage	TRANS RF NPN 30V 550MHZ SSM Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 30V Frequency - Transition: 550MHz Noise Figure (dB Typ @ f): 2.3dB ~ 5dB @ 100MHz Gain: 17dB ~ 23dB Power - Max: 100mW DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 1mA, 6V Current - Collector (Ic) (Max): 20mA Operating Temperature: 125°C (TJ) Mounting Type: Surface Mount Package / Case: SC-75, SOT-416 Supplier Device Package: SSM	Paket: SC-75, SOT-416	Lager72.000	30V	550MHz	2.3dB ~ 5dB @ 100MHz	17dB ~ 23dB	100mW	70 @ 1mA, 6V	20mA	125°C (TJ)	Surface Mount	SC-75, SOT-416	SSM
2SC4215-Y(TE85L,F)	Toshiba Semiconductor and Storage	TRANS RF NPN 30V 550MHZ USM Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 30V Frequency - Transition: 550MHz Noise Figure (dB Typ @ f): 2dB ~ 5dB @ 100MHz Gain: 17dB ~ 23dB Power - Max: 100mW DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 6V Current - Collector (Ic) (Max): 20mA Operating Temperature: 125°C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: USM	Paket: SC-70, SOT-323	Lager13.080	30V	550MHz	2dB ~ 5dB @ 100MHz	17dB ~ 23dB	100mW	100 @ 1mA, 6V	20mA	125°C (TJ)	Surface Mount	SC-70, SOT-323	USM
BFU550XAR	NXP	TRANS RF NPN 12V 50MA SOT-143B Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 11GHz Noise Figure (dB Typ @ f): 0.75db @ 900MHz Gain: 21.5dB Power - Max: 450mW DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 15mA, 8V Current - Collector (Ic) (Max): 50mA Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount, Gull Wing Package / Case: TO-253-4, TO-253AA Supplier Device Package: SOT-143B	Paket: TO-253-4, TO-253AA	Lager25.962	12V	11GHz	0.75db @ 900MHz	21.5dB	450mW	60 @ 15mA, 8V	50mA	-40°C ~ 150°C (TJ)	Surface Mount, Gull Wing	TO-253-4, TO-253AA	SOT-143B
MMBT918LT1G	ON Semiconductor	TRANS SS VHF NPN 15V SOT23 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 15V Frequency - Transition: 600MHz Noise Figure (dB Typ @ f): 6dB @ 60MHz Gain: 11dB Power - Max: 225mW DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 3mA, 1V Current - Collector (Ic) (Max): 50mA Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3 (TO-236)	Paket: TO-236-3, SC-59, SOT-23-3	Lager1.699.752	15V	600MHz	6dB @ 60MHz	11dB	225mW	20 @ 3mA, 1V	50mA	-55°C ~ 150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23-3 (TO-236)
MCH4021-TL-H	onsemi	RF TRANS NPN 8V 16GHZ 4MCPH Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 8V Frequency - Transition: 16GHz Noise Figure (dB Typ @ f): 1.2dB @ 1GHz Gain: 17.5dB Power - Max: 400mW DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 50mA, 5V Current - Collector (Ic) (Max): 150mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 4-SMD, Flat Leads Supplier Device Package: 4-MCPH	Paket: -	Request a Quote	8V	16GHz	1.2dB @ 1GHz	17.5dB	400mW	60 @ 50mA, 5V	150mA	150°C (TJ)	Surface Mount	4-SMD, Flat Leads	4-MCPH
MRF316	MACOM Technology Solutions	TRANS RF NPN 35V 9A 316-01 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 35V Frequency - Transition: - Noise Figure (dB Typ @ f): - Gain: 13dB Power - Max: 80W DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 4A, 5V Current - Collector (Ic) (Max): 9A Operating Temperature: - Mounting Type: Chassis Mount Package / Case: 316-01 Supplier Device Package: 316-01, STYLE 1	Paket: -	Request a Quote	35V	-	-	13dB	80W	10 @ 4A, 5V	9A	-	Chassis Mount	316-01	316-01, STYLE 1
PH2729-110M	MACOM Technology Solutions	TRANSISTOR,110W,2.7-2.9GHZ,100US Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 63V Frequency - Transition: 2.7GHz ~ 2.9GHz Noise Figure (dB Typ @ f): - Gain: 6.8dB Power - Max: 330W DC Current Gain (hFE) (Min) @ Ic, Vce: - Current - Collector (Ic) (Max): 8A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: 2L-FLG Supplier Device Package: 2L-FLG	Paket: -	Request a Quote	63V	2.7GHz ~ 2.9GHz	-	6.8dB	330W	-	8A	200°C (TJ)	Chassis Mount	2L-FLG	2L-FLG
2SC5080ZD-TL	Renesas Electronics Corporation	RF 0.05A, NPN Transistor Type: - Voltage - Collector Emitter Breakdown (Max): - Frequency - Transition: - Noise Figure (dB Typ @ f): - Gain: - Power - Max: - DC Current Gain (hFE) (Min) @ Ic, Vce: - Current - Collector (Ic) (Max): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	Paket: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-

BFG 19S E6327

Infineon Technologies

TRANSISTOR RF NPN 15V SOT-223

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 15V
Frequency - Transition: 5.5GHz
Noise Figure (dB Typ @ f): 2dB ~ 3dB @ 900MHz ~ 1.8GHz
Gain: 14dB ~ 8.5dB
Power - Max: 1W
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 70mA, 8V
Current - Collector (Ic) (Max): 210mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Supplier Device Package: PG-SOT223-4

Paket: TO-261-4, TO-261AA

Lager6.384

15V

5.5GHz

2dB ~ 3dB @ 900MHz ~ 1.8GHz

14dB ~ 8.5dB

1W

70 @ 70mA, 8V

210mA

150°C (TJ)

Surface Mount

TO-261-4, TO-261AA

PG-SOT223-4

BF 770A E6327

Infineon Technologies

TRANSISTOR RF NPN 12V SOT-23

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 6GHz
Noise Figure (dB Typ @ f): 1.5dB ~ 2.6dB @ 900MHz ~ 1.8GHz
Gain: 9.5dB ~ 14.5dB
Power - Max: 300mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 30mA, 8V
Current - Collector (Ic) (Max): 90mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: PG-SOT23-3

Paket: TO-236-3, SC-59, SOT-23-3

Lager5.072

12V

6GHz

1.5dB ~ 2.6dB @ 900MHz ~ 1.8GHz

9.5dB ~ 14.5dB

300mW

70 @ 30mA, 8V

90mA

150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

PG-SOT23-3

NE67739-T1-A

CEL

RF TRANSISTOR NPN SOT-143

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 6V
Frequency - Transition: 14.5GHz
Noise Figure (dB Typ @ f): 1.5dB @ 2GHz
Gain: 12dB
Power - Max: 200mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 20mA, 3V
Current - Collector (Ic) (Max): 50mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-253-4, TO-253AA
Supplier Device Package: SOT-143

Paket: TO-253-4, TO-253AA

Lager7.552

6V

14.5GHz

1.5dB @ 2GHz

12dB

200mW

75 @ 20mA, 3V

50mA

150°C (TJ)

Surface Mount

TO-253-4, TO-253AA

SOT-143

AT-64023

Broadcom Limited

TRANS NPN BIPO 20V 200MA 230-SMD

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 20V
Frequency - Transition: -
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: 3W
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 110mA, 8V
Current - Collector (Ic) (Max): 200mA
Operating Temperature: 200°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-SMD (230 mil BeO)
Supplier Device Package: 230 mil Be0

Paket: 4-SMD (230 mil BeO)

Lager7.472

20V

-

3W

20 @ 110mA, 8V

200mA

200°C (TJ)

Surface Mount

4-SMD (230 mil BeO)

230 mil Be0

NE68039-T1-A

CEL

RF TRANSISTOR NPN SOT-143

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 10V
Frequency - Transition: 10GHz
Noise Figure (dB Typ @ f): 1.8dB @ 2GHz
Gain: 11dB
Power - Max: 200mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 6V
Current - Collector (Ic) (Max): 35mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-253-4, TO-253AA
Supplier Device Package: SOT-143

Paket: TO-253-4, TO-253AA

Lager2.384

10V

10GHz

1.8dB @ 2GHz

11dB

200mW

50 @ 10mA, 6V

35mA

150°C (TJ)

Surface Mount

TO-253-4, TO-253AA

SOT-143

KSC1674YTA

Fairchild/ON Semiconductor

TRANSISTOR NPN 20V 20MA TO-92

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 20V
Frequency - Transition: 600MHz
Noise Figure (dB Typ @ f): 3dB ~ 5dB @ 100MHz
Gain: -
Power - Max: 250mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Current - Collector (Ic) (Max): 20mA
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3

Paket: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Lager5.328

20V

600MHz

3dB ~ 5dB @ 100MHz

-

250mW

120 @ 1mA, 6V

20mA

150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

TO-92-3

KSC2755YMTF

Fairchild/ON Semiconductor

TRANSISTOR NPN 30V 20MA SOT-23

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 30V
Frequency - Transition: 600MHz
Noise Figure (dB Typ @ f): 0.3dB @ 200MHz
Gain: 20dB ~ 23dB
Power - Max: 150mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 3mA, 10V
Current - Collector (Ic) (Max): 20mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)

Paket: TO-236-3, SC-59, SOT-23-3

Lager2.052.000

30V

600MHz

0.3dB @ 200MHz

20dB ~ 23dB

150mW

120 @ 3mA, 10V

20mA

150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23-3 (TO-236)

NESG2101M05-A

CEL

TRANS NPN 2GHZ M05

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 5V
Frequency - Transition: 17GHz
Noise Figure (dB Typ @ f): 0.6dB ~ 1.2dB @ 1GHz ~ 2GHz
Gain: 11dB ~ 19dB
Power - Max: 500mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 130 @ 15mA, 2V
Current - Collector (Ic) (Max): 100mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-343F
Supplier Device Package: M05

Paket: SOT-343F

Lager2.880

5V

17GHz

0.6dB ~ 1.2dB @ 1GHz ~ 2GHz

11dB ~ 19dB

500mW

130 @ 15mA, 2V

100mA

150°C (TJ)

Surface Mount

SOT-343F

M05

AT-41511-TR1

Broadcom Limited

IC TRANS NPN GP BIPOLAR SOT-143

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: -
Noise Figure (dB Typ @ f): 1dB ~ 1.7dB @ 900MHz ~ 2.4GHz
Gain: 11dB ~ 15.5dB
Power - Max: 225mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Current - Collector (Ic) (Max): 50mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-253-4, TO-253AA
Supplier Device Package: SOT-143

Paket: TO-253-4, TO-253AA

Lager506.136

12V

-

1dB ~ 1.7dB @ 900MHz ~ 2.4GHz

11dB ~ 15.5dB

225mW

30 @ 5mA, 5V

50mA

150°C (TJ)

Surface Mount

TO-253-4, TO-253AA

SOT-143

2SC4627J0L

Panasonic Electronic Components

TRANS NPN HF 20VCEO 15MA SS-MINI

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 20V
Frequency - Transition: 650MHz
Noise Figure (dB Typ @ f): 3.3dB @ 100MHz
Gain: 24dB
Power - Max: 125mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 65 @ 1mA, 6V
Current - Collector (Ic) (Max): 15mA
Operating Temperature: 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-89, SOT-490
Supplier Device Package: SSMini3-F1

Paket: SC-89, SOT-490

Lager823.080

20V

650MHz

3.3dB @ 100MHz

24dB

125mW

65 @ 1mA, 6V

15mA

125°C (TJ)

Surface Mount

SC-89, SOT-490

SSMini3-F1

BFS520,135

NXP

TRANS NPN 15V 70MA 9GHZ SOT323

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 15V
Frequency - Transition: 9GHz
Noise Figure (dB Typ @ f): 1.1dB ~ 2.1dB @ 900MHz
Gain: -
Power - Max: 300mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 20mA, 6V
Current - Collector (Ic) (Max): 70mA
Operating Temperature: 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SOT-323-3

Paket: SC-70, SOT-323

Lager6.608

15V

9GHz

1.1dB ~ 2.1dB @ 900MHz

-

300mW

60 @ 20mA, 6V

70mA

175°C (TJ)

Surface Mount

SC-70, SOT-323

SOT-323-3

BFG540,215

NXP

TRANS RF 15V 9GHZ SOT143B

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 15V
Frequency - Transition: 9GHz
Noise Figure (dB Typ @ f): 1.3dB ~ 1.8dB @ 900MHz
Gain: -
Power - Max: 400mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 40mA, 8V
Current - Collector (Ic) (Max): 120mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-253-4, TO-253AA
Supplier Device Package: SOT-143B

Paket: TO-253-4, TO-253AA

Lager5.600

15V

9GHz

1.3dB ~ 1.8dB @ 900MHz

-

400mW

60 @ 40mA, 8V

120mA

150°C (TJ)

Surface Mount

TO-253-4, TO-253AA

SOT-143B

BFG67,235

NXP

TRANS RF NPN 8GHZ 10V SOT143B

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 10V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 1.3dB ~ 3dB @ 1GHz ~ 2GHz
Gain: -
Power - Max: 380mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 15mA, 5V
Current - Collector (Ic) (Max): 50mA
Operating Temperature: 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-253-4, TO-253AA
Supplier Device Package: SOT-143B

Paket: TO-253-4, TO-253AA

Lager3.104

10V

8GHz

1.3dB ~ 3dB @ 1GHz ~ 2GHz

-

380mW

60 @ 15mA, 5V

50mA

175°C (TJ)

Surface Mount

TO-253-4, TO-253AA

SOT-143B

TPR1000

Microsemi Corporation

TRANS RF BIPO 2900W 80A 55KV1

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 65V
Frequency - Transition: 1.09GHz
Noise Figure (dB Typ @ f): -
Gain: 6dB
Power - Max: 2900W
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 1A, 5V
Current - Collector (Ic) (Max): 80A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: 55KV
Supplier Device Package: 55KV

Paket: 55KV

Lager5.152

65V

1.09GHz

-

6dB

2900W

10 @ 1A, 5V

80A

200°C (TJ)

Chassis Mount

55KV

2001

Microsemi Corporation

TRANS HBT RF BIPOLAR 55BT

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 50V
Frequency - Transition: 2GHz
Noise Figure (dB Typ @ f): -
Gain: 9.5dB
Power - Max: 5W
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 5V
Current - Collector (Ic) (Max): 250mA
Operating Temperature: -
Mounting Type: Chassis Mount
Package / Case: 55BT
Supplier Device Package: 55BT

Paket: 55BT

Lager3.904

50V

2GHz

-

9.5dB

5W

20 @ 100mA, 5V

250mA

-

Chassis Mount

55BT

2N5179

Microsemi Corporation

TRANS RF NPN 12V 50MA TO72

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 200MHz
Noise Figure (dB Typ @ f): 4.5dB @ 200MHz
Gain: 20dB
Power - Max: 300mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 3mA, 1V
Current - Collector (Ic) (Max): 50mA
Operating Temperature: -
Mounting Type: Through Hole
Package / Case: TO-206AF, TO-72-4 Metal Can
Supplier Device Package: TO-72

Paket: TO-206AF, TO-72-4 Metal Can

Lager17.928

12V

200MHz

4.5dB @ 200MHz

20dB

300mW

25 @ 3mA, 1V

50mA

-

Through Hole

TO-206AF, TO-72-4 Metal Can

TO-72

MCH4021-TL-E

ON Semiconductor

TRANS NPN 8V 150MA MCPH4

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 8V
Frequency - Transition: 16GHz
Noise Figure (dB Typ @ f): 1.2dB @ 1GHz
Gain: 17.5dB
Power - Max: 400mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 50mA, 5V
Current - Collector (Ic) (Max): 150mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-SMD, Flat Leads
Supplier Device Package: 4-MCPH

Paket: 4-SMD, Flat Leads

Lager3.344

8V

16GHz

1.2dB @ 1GHz

17.5dB

400mW

60 @ 50mA, 5V

150mA

150°C (TJ)

Surface Mount

4-SMD, Flat Leads

4-MCPH

MRF454

M/A-Com Technology Solutions

TRANS RF NPN 25V 20A 211-11

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 25V
Frequency - Transition: -
Noise Figure (dB Typ @ f): -
Gain: 12dB
Power - Max: 80W
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 5A, 5V
Current - Collector (Ic) (Max): 20A
Operating Temperature: -
Mounting Type: Chassis Mount
Package / Case: 211-11, Style 2
Supplier Device Package: 211-11, Style 2

Paket: 211-11, Style 2

Lager7.504

25V

-

12dB

80W

40 @ 5A, 5V

20A

-

Chassis Mount

211-11, Style 2

BFP 193 E6327

Infineon Technologies

TRANSISTOR NPN RF 12V SOT-143

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 1dB ~ 1.6dB @ 900MHz ~ 1.8GHz
Gain: 12dB ~ 18dB
Power - Max: 580mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 30mA, 8V
Current - Collector (Ic) (Max): 80mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-253-4, TO-253AA
Supplier Device Package: PG-SOT143-4

Paket: TO-253-4, TO-253AA

Lager3.408

12V

8GHz

1dB ~ 1.6dB @ 900MHz ~ 1.8GHz

12dB ~ 18dB

580mW

70 @ 30mA, 8V

80mA

150°C (TJ)

Surface Mount

TO-253-4, TO-253AA

PG-SOT143-4

BFU530WX

NXP

TRANS RF NPN 12V 40MA SOT-323

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 11GHz
Noise Figure (dB Typ @ f): 0.6dB @ 900MHz
Gain: 18.5dB
Power - Max: 450mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 8V
Current - Collector (Ic) (Max): 40mA
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SOT-323-3

Paket: SC-70, SOT-323

Lager6.496

12V

11GHz

0.6dB @ 900MHz

18.5dB

450mW

60 @ 10mA, 8V

40mA

-40°C ~ 150°C (TJ)

Surface Mount

SC-70, SOT-323

SOT-323-3

2SC4915-O,LF

Toshiba Semiconductor and Storage

TRANS RF NPN 30V 550MHZ SSM

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 30V
Frequency - Transition: 550MHz
Noise Figure (dB Typ @ f): 2.3dB ~ 5dB @ 100MHz
Gain: 17dB ~ 23dB
Power - Max: 100mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 1mA, 6V
Current - Collector (Ic) (Max): 20mA
Operating Temperature: 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Supplier Device Package: SSM

Paket: SC-75, SOT-416

Lager72.000

30V

550MHz

2.3dB ~ 5dB @ 100MHz

17dB ~ 23dB

100mW

70 @ 1mA, 6V

20mA

125°C (TJ)

Surface Mount

SC-75, SOT-416

SSM

2SC4215-Y(TE85L,F)

Toshiba Semiconductor and Storage

TRANS RF NPN 30V 550MHZ USM

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 30V
Frequency - Transition: 550MHz
Noise Figure (dB Typ @ f): 2dB ~ 5dB @ 100MHz
Gain: 17dB ~ 23dB
Power - Max: 100mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 6V
Current - Collector (Ic) (Max): 20mA
Operating Temperature: 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: USM

Paket: SC-70, SOT-323

Lager13.080

30V

550MHz

2dB ~ 5dB @ 100MHz

17dB ~ 23dB

100mW

100 @ 1mA, 6V

20mA

125°C (TJ)

Surface Mount

SC-70, SOT-323

USM

BFU550XAR

NXP

TRANS RF NPN 12V 50MA SOT-143B

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 11GHz
Noise Figure (dB Typ @ f): 0.75db @ 900MHz
Gain: 21.5dB
Power - Max: 450mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 15mA, 8V
Current - Collector (Ic) (Max): 50mA
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount, Gull Wing
Package / Case: TO-253-4, TO-253AA
Supplier Device Package: SOT-143B

Paket: TO-253-4, TO-253AA

Lager25.962

12V

11GHz

0.75db @ 900MHz

21.5dB

450mW

60 @ 15mA, 8V

50mA

-40°C ~ 150°C (TJ)

Surface Mount, Gull Wing

TO-253-4, TO-253AA

SOT-143B

MMBT918LT1G

ON Semiconductor

TRANS SS VHF NPN 15V SOT23

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 15V
Frequency - Transition: 600MHz
Noise Figure (dB Typ @ f): 6dB @ 60MHz
Gain: 11dB
Power - Max: 225mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 3mA, 1V
Current - Collector (Ic) (Max): 50mA
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)

Paket: TO-236-3, SC-59, SOT-23-3

Lager1.699.752

15V

600MHz

6dB @ 60MHz

11dB

225mW

20 @ 3mA, 1V

50mA

-55°C ~ 150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23-3 (TO-236)

MCH4021-TL-H

onsemi

RF TRANS NPN 8V 16GHZ 4MCPH

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 8V
Frequency - Transition: 16GHz
Noise Figure (dB Typ @ f): 1.2dB @ 1GHz
Gain: 17.5dB
Power - Max: 400mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 50mA, 5V
Current - Collector (Ic) (Max): 150mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-SMD, Flat Leads
Supplier Device Package: 4-MCPH

Paket: -

Request a Quote

8V

16GHz

1.2dB @ 1GHz

17.5dB

400mW

60 @ 50mA, 5V

150mA

150°C (TJ)

Surface Mount

4-SMD, Flat Leads

4-MCPH

MRF316

MACOM Technology Solutions

TRANS RF NPN 35V 9A 316-01

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 35V
Frequency - Transition: -
Noise Figure (dB Typ @ f): -
Gain: 13dB
Power - Max: 80W
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 4A, 5V
Current - Collector (Ic) (Max): 9A
Operating Temperature: -
Mounting Type: Chassis Mount
Package / Case: 316-01
Supplier Device Package: 316-01, STYLE 1

Paket: -

Request a Quote

35V

-

13dB

80W

10 @ 4A, 5V

9A

-

Chassis Mount

316-01

316-01, STYLE 1

PH2729-110M

MACOM Technology Solutions

TRANSISTOR,110W,2.7-2.9GHZ,100US

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 63V
Frequency - Transition: 2.7GHz ~ 2.9GHz
Noise Figure (dB Typ @ f): -
Gain: 6.8dB
Power - Max: 330W
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Current - Collector (Ic) (Max): 8A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: 2L-FLG
Supplier Device Package: 2L-FLG

Paket: -

Request a Quote

63V

2.7GHz ~ 2.9GHz

-

6.8dB

330W

-

8A

200°C (TJ)

Chassis Mount

2L-FLG

2SC5080ZD-TL

Renesas Electronics Corporation

RF 0.05A, NPN

Transistor Type: -
Voltage - Collector Emitter Breakdown (Max): -
Frequency - Transition: -
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Current - Collector (Ic) (Max): -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

Paket: -

Request a Quote

-