Page 39 - Transistoren - Bipolar (BJT) - HF | Diskrete Halbleiterprodukte

Teilenummer	Hersteller	Beschreibung	Paket	Lager	Voltage - Collector Emitter Breakdown (Max)	Frequency - Transition	Noise Figure (dB Typ @ f)	Gain	Power - Max	DC Current Gain (hFE) (Min) @ Ic, Vce	Current - Collector (Ic) (Max)	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
BFP405E6433HTMA1	Infineon Technologies	TRANSISTOR RF NPN 4.5V SOT-343 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 5V Frequency - Transition: 25GHz Noise Figure (dB Typ @ f): 1.25dB @ 1.8GHz Gain: 23dB Power - Max: 75mW DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 4V Current - Collector (Ic) (Max): 25mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-82A, SOT-343 Supplier Device Package: PG-SOT343-4	Paket: SC-82A, SOT-343	Lager5.344	5V	25GHz	1.25dB @ 1.8GHz	23dB	75mW	60 @ 5mA, 4V	25mA	150°C (TJ)	Surface Mount	SC-82A, SOT-343	PG-SOT343-4
2SC4095-T1-A	CEL	RF TRANSISTOR NPN SOT-143 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 10V Frequency - Transition: 10GHz Noise Figure (dB Typ @ f): 1.8dB @ 2GHz Gain: 12dB Power - Max: 200mW DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 6V Current - Collector (Ic) (Max): 35mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-253-4, TO-253AA Supplier Device Package: SOT-143	Paket: TO-253-4, TO-253AA	Lager6.352	10V	10GHz	1.8dB @ 2GHz	12dB	200mW	50 @ 10mA, 6V	35mA	150°C (TJ)	Surface Mount	TO-253-4, TO-253AA	SOT-143
SD1536-03	Microsemi Corporation	TRANS RF BIPO 292W 10A M115 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 65V Frequency - Transition: 1.025GHz ~ 1.15GHz Noise Figure (dB Typ @ f): - Gain: 8.4dB Power - Max: 292W DC Current Gain (hFE) (Min) @ Ic, Vce: 5 @ 100mA, 5V Current - Collector (Ic) (Max): 10A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: M115 Supplier Device Package: M115	Paket: M115	Lager7.040	65V	1.025GHz ~ 1.15GHz	-	8.4dB	292W	5 @ 100mA, 5V	10A	200°C (TJ)	Chassis Mount	M115	M115
EC3H02BA-TL-H	ON Semiconductor	TRANS NPN 10V 70A ECSP1006-3 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 10V Frequency - Transition: 7GHz Noise Figure (dB Typ @ f): 1dB @ 1GHz Gain: 8.5dB Power - Max: 100mW DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 20mA, 5V Current - Collector (Ic) (Max): 70mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 3-XFDFN Supplier Device Package: 3-ECSP1006	Paket: 3-XFDFN	Lager5.520	10V	7GHz	1dB @ 1GHz	8.5dB	100mW	120 @ 20mA, 5V	70mA	150°C (TJ)	Surface Mount	3-XFDFN	3-ECSP1006
HFA3128BZ	Intersil	IC TRANSISTOR ARRAY PNP 16-SOIC Transistor Type: 5 PNP Voltage - Collector Emitter Breakdown (Max): 15V Frequency - Transition: 5.5GHz Noise Figure (dB Typ @ f): 3.5dB @ 1GHz Gain: - Power - Max: 150mW DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 10mA, 2V Current - Collector (Ic) (Max): 65mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 16-SOIC (0.154", 3.90mm Width) Supplier Device Package: 16-SOIC	Paket: 16-SOIC (0.154", 3.90mm Width)	Lager4.816	15V	5.5GHz	3.5dB @ 1GHz	-	150mW	20 @ 10mA, 2V	65mA	150°C (TJ)	Surface Mount	16-SOIC (0.154", 3.90mm Width)	16-SOIC
BF959	ON Semiconductor	TRANS RF NPN 20V 100MA TO-92 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 20V Frequency - Transition: 700MHz Noise Figure (dB Typ @ f): 3dB @ 200MHz Gain: - Power - Max: 625mW DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V Current - Collector (Ic) (Max): 100mA Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package: TO-92-3	Paket: TO-226-3, TO-92-3 (TO-226AA)	Lager6.176	20V	700MHz	3dB @ 200MHz	-	625mW	40 @ 20mA, 10V	100mA	-55°C ~ 150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA)	TO-92-3
BF240,112	NXP	TRANS NPN 40V 25MA SOT54 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 40V Frequency - Transition: 150MHz Noise Figure (dB Typ @ f): - Gain: - Power - Max: 300mW DC Current Gain (hFE) (Min) @ Ic, Vce: 67 @ 1mA, 10V Current - Collector (Ic) (Max): 25mA Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package: TO-92-3	Paket: TO-226-3, TO-92-3 (TO-226AA)	Lager2.640	40V	150MHz	-	-	300mW	67 @ 1mA, 10V	25mA	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA)	TO-92-3
NE68518-A	CEL	RF TRANSISTOR NPN SOT-343 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 6V Frequency - Transition: 12GHz Noise Figure (dB Typ @ f): 1.5dB @ 2GHz Gain: 11dB Power - Max: 150mW DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 10mA, 3V Current - Collector (Ic) (Max): 30mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-82A, SOT-343 Supplier Device Package: SOT-343	Paket: SC-82A, SOT-343	Lager2.032	6V	12GHz	1.5dB @ 2GHz	11dB	150mW	75 @ 10mA, 3V	30mA	150°C (TJ)	Surface Mount	SC-82A, SOT-343	SOT-343
NE52418-T1-A	CEL	IC AMP HBT GAAS LN 4-SMINI Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 5V Frequency - Transition: - Noise Figure (dB Typ @ f): 1dB ~ 1.5dB @ 2GHz Gain: 14dB ~ 16dB Power - Max: 150mW DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 3mA, 2V Current - Collector (Ic) (Max): 40mA Operating Temperature: 125°C (TJ) Mounting Type: Surface Mount Package / Case: SC-82A, SOT-343 Supplier Device Package: 4-Super Mini Mold	Paket: SC-82A, SOT-343	Lager21.720	5V	-	1dB ~ 1.5dB @ 2GHz	14dB ~ 16dB	150mW	100 @ 3mA, 2V	40mA	125°C (TJ)	Surface Mount	SC-82A, SOT-343	4-Super Mini Mold
MPSH81	Fairchild/ON Semiconductor	TRANSISTOR RF PNP TO-92 Transistor Type: PNP Voltage - Collector Emitter Breakdown (Max): 20V Frequency - Transition: 600MHz Noise Figure (dB Typ @ f): - Gain: - Power - Max: 350mW DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V Current - Collector (Ic) (Max): 50mA Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package: TO-92-3	Paket: TO-226-3, TO-92-3 (TO-226AA)	Lager4.288	20V	600MHz	-	-	350mW	60 @ 5mA, 10V	50mA	-55°C ~ 150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA)	TO-92-3
BFS17HTC	Diodes Incorporated	TRANSISTOR RF NPN SOT23-3 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 15V Frequency - Transition: 1.3GHz Noise Figure (dB Typ @ f): 4.5dB @ 500MHz Gain: - Power - Max: 330mW DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2mA, 1V Current - Collector (Ic) (Max): 25mA Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3	Paket: TO-236-3, SC-59, SOT-23-3	Lager6.320	15V	1.3GHz	4.5dB @ 500MHz	-	330mW	70 @ 2mA, 1V	25mA	-55°C ~ 150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23-3
NE68019-T1-A	CEL	RF TRANSISTOR NPN SOT-523 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 10V Frequency - Transition: 10GHz Noise Figure (dB Typ @ f): 1.9dB @ 2GHz Gain: 9.6dB Power - Max: 100mW DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 3V Current - Collector (Ic) (Max): 35mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-523 Supplier Device Package: SOT-523	Paket: SOT-523	Lager105.624	10V	10GHz	1.9dB @ 2GHz	9.6dB	100mW	80 @ 5mA, 3V	35mA	150°C (TJ)	Surface Mount	SOT-523	SOT-523
NE85630-T1	CEL	TRANS NPN 1GHZ SOT-323 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 4.5GHz Noise Figure (dB Typ @ f): 1.3dB ~ 2.2dB @ 1GHz ~ 2GHz Gain: 6dB ~ 12dB Power - Max: 150mW DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 7mA, 3V Current - Collector (Ic) (Max): 100mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: SOT-323	Paket: SC-70, SOT-323	Lager2.416	12V	4.5GHz	1.3dB ~ 2.2dB @ 1GHz ~ 2GHz	6dB ~ 12dB	150mW	40 @ 7mA, 3V	100mA	150°C (TJ)	Surface Mount	SC-70, SOT-323	SOT-323
BFG540W/X,115	NXP	TRANS WIDEBAND 9GHZ SOT-343 15V Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 15V Frequency - Transition: 9GHz Noise Figure (dB Typ @ f): 1.3dB ~ 2.4dB @ 900MHz Gain: - Power - Max: 500mW DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 40mA, 8V Current - Collector (Ic) (Max): 120mA Operating Temperature: 175°C (TJ) Mounting Type: Surface Mount Package / Case: SC-82A, SOT-343 Supplier Device Package: CMPAK-4	Paket: SC-82A, SOT-343	Lager7.408	15V	9GHz	1.3dB ~ 2.4dB @ 900MHz	-	500mW	100 @ 40mA, 8V	120mA	175°C (TJ)	Surface Mount	SC-82A, SOT-343	CMPAK-4
MRF10502	M/A-Com Technology Solutions	TRANS NPN 500W 1025MHZ-1150MHZ Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 65V Frequency - Transition: - Noise Figure (dB Typ @ f): - Gain: 9dB Power - Max: 500W DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5A, 5V Current - Collector (Ic) (Max): 29A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: 355J-02 Supplier Device Package: 355J-02, STYLE 1	Paket: 355J-02	Lager3.344	65V	-	-	9dB	500W	20 @ 5A, 5V	29A	200°C (TJ)	Chassis Mount	355J-02	355J-02, STYLE 1
PH3135-5S	M/A-Com Technology Solutions	TRANSISTOR 5W 33V 3.10-3.50GHZ Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 60V Frequency - Transition: - Noise Figure (dB Typ @ f): - Gain: 8.5dB Power - Max: 5W DC Current Gain (hFE) (Min) @ Ic, Vce: - Current - Collector (Ic) (Max): 750mA Operating Temperature: 200°C (TJ) Mounting Type: - Package / Case: - Supplier Device Package: -	Paket: -	Lager3.136	60V	-	-	8.5dB	5W	-	750mA	200°C (TJ)	-	-	-
MDS150	Microsemi Corporation	TRANS RF BIPO 350W 4A 55AW1 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 60V Frequency - Transition: 1.03GHz ~ 1.09GHz Noise Figure (dB Typ @ f): - Gain: 10dB Power - Max: 350W DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 500mA, 5V Current - Collector (Ic) (Max): 4A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: 55AW Supplier Device Package: 55AW	Paket: 55AW	Lager3.888	60V	1.03GHz ~ 1.09GHz	-	10dB	350W	20 @ 500mA, 5V	4A	200°C (TJ)	Chassis Mount	55AW	55AW
23A008	Microsemi Corporation	TRANS RF BIPO 5W 400MA55BT2 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 22V Frequency - Transition: 3.7GHz Noise Figure (dB Typ @ f): - Gain: 8.5dB ~ 9.5dB Power - Max: 5W DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 5V Current - Collector (Ic) (Max): 400mA Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: 55BT Supplier Device Package: 55BT	Paket: 55BT	Lager7.104	22V	3.7GHz	-	8.5dB ~ 9.5dB	5W	20 @ 100mA, 5V	400mA	200°C (TJ)	Chassis Mount	55BT	55BT
AT-30511-TR2G	Broadcom Limited	TRANS NPN BIPO 5.5V 8MA SOT-143 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 5.5V Frequency - Transition: - Noise Figure (dB Typ @ f): 1.1dB ~ 1.4dB @ 900MHz Gain: 14dB ~ 16dB Power - Max: 100mW DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 1mA, 2.7V Current - Collector (Ic) (Max): 8mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-253-4, TO-253AA Supplier Device Package: SOT-143	Paket: TO-253-4, TO-253AA	Lager7.632	5.5V	-	1.1dB ~ 1.4dB @ 900MHz	14dB ~ 16dB	100mW	70 @ 1mA, 2.7V	8mA	150°C (TJ)	Surface Mount	TO-253-4, TO-253AA	SOT-143
AT-32033-TR1G	Broadcom Limited	IC TRANS NPN BIPOLAR SOT-23 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 5.5V Frequency - Transition: - Noise Figure (dB Typ @ f): 1dB ~ 1.3dB @ 900MHz Gain: 11dB ~ 12.5dB Power - Max: 200mW DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2mA, 2.7V Current - Collector (Ic) (Max): 32mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23	Paket: TO-236-3, SC-59, SOT-23-3	Lager2.128.416	5.5V	-	1dB ~ 1.3dB @ 900MHz	11dB ~ 12.5dB	200mW	70 @ 2mA, 2.7V	32mA	150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23
SMMBTH10-4LT3G	ON Semiconductor	TRANS NPN VHF/UHF SOT23 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 25V Frequency - Transition: 800MHz Noise Figure (dB Typ @ f): - Gain: - Power - Max: 225mW DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 4mA, 10V Current - Collector (Ic) (Max): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3 (TO-236)	Paket: TO-236-3, SC-59, SOT-23-3	Lager3.488	25V	800MHz	-	-	225mW	120 @ 4mA, 10V	-	-55°C ~ 150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23-3 (TO-236)
2SC4655JCL	Panasonic Electronic Components	TRANS NPN 20VCEO 30MA SSMINI-3 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 20V Frequency - Transition: 230MHz Noise Figure (dB Typ @ f): - Gain: - Power - Max: 125mW DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 1mA, 10V Current - Collector (Ic) (Max): 30mA Operating Temperature: 125°C (TJ) Mounting Type: Surface Mount Package / Case: SC-89, SOT-490 Supplier Device Package: SSMini3-F1	Paket: SC-89, SOT-490	Lager36.000	20V	230MHz	-	-	125mW	110 @ 1mA, 10V	30mA	125°C (TJ)	Surface Mount	SC-89, SOT-490	SSMini3-F1
NE696M01-T1	CEL	TRANS NPN 2GHZ SOT-363 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 6V Frequency - Transition: 14GHz Noise Figure (dB Typ @ f): 1.6dB @ 2GHz Gain: - Power - Max: 150mW DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 3V Current - Collector (Ic) (Max): 30mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SOT-363	Paket: 6-TSSOP, SC-88, SOT-363	Lager73.554	6V	14GHz	1.6dB @ 2GHz	-	150mW	80 @ 10mA, 3V	30mA	150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SOT-363
2N2857	Central Semiconductor Corp	TRANS NPN 15V 40MA TO-72 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 15V Frequency - Transition: 1.9GHz Noise Figure (dB Typ @ f): 4.5dB @ 450MHz Gain: - Power - Max: 200mW DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 3mA, 1V Current - Collector (Ic) (Max): 40mA Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-206AF, TO-72-4 Metal Can Supplier Device Package: TO-72	Paket: TO-206AF, TO-72-4 Metal Can	Lager20.976	15V	1.9GHz	4.5dB @ 450MHz	-	200mW	30 @ 3mA, 1V	40mA	-65°C ~ 200°C (TJ)	Through Hole	TO-206AF, TO-72-4 Metal Can	TO-72
LM3046M/NOPB	Texas Instruments	IC TRANSISTOR ARRAY 14-SOIC Transistor Type: 5 NPN Voltage - Collector Emitter Breakdown (Max): 15V Frequency - Transition: - Noise Figure (dB Typ @ f): 3.25dB @ 1kHz Gain: - Power - Max: 750mW DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 1mA, 3V Current - Collector (Ic) (Max): 50mA Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 14-SOIC (0.154", 3.90mm Width) Supplier Device Package: 14-SOIC	Paket: 14-SOIC (0.154", 3.90mm Width)	Lager5.584	15V	-	3.25dB @ 1kHz	-	750mW	40 @ 1mA, 3V	50mA	-40°C ~ 85°C (TA)	Surface Mount	14-SOIC (0.154", 3.90mm Width)	14-SOIC
NE94433-T1B-A	CEL	TRANSISTOR NPN OSC FT=2GHZ SO Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 15V Frequency - Transition: 2GHz Noise Figure (dB Typ @ f): - Gain: - Power - Max: 150mW DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 10V Current - Collector (Ic) (Max): 50mA Operating Temperature: - Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3	Paket: -	Request a Quote	15V	2GHz	-	-	150mW	50 @ 5mA, 10V	50mA	-	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23-3
SD1332-05C	Microsemi Corporation	RF TRANS NPN 15V 5.5GHZ M150 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 15V Frequency - Transition: 5.5GHz Noise Figure (dB Typ @ f): 2.5dB @ 1GHz Gain: 17dB Power - Max: 180W DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 14mA, 10V Current - Collector (Ic) (Max): 30A Operating Temperature: 200°C Mounting Type: Surface Mount Package / Case: M150 Supplier Device Package: M150	Paket: -	Request a Quote	15V	5.5GHz	2.5dB @ 1GHz	17dB	180W	50 @ 14mA, 10V	30A	200°C	Surface Mount	M150	M150
S200-50A	Microsemi Corporation	RF POWER TRANSISTOR Transistor Type: - Voltage - Collector Emitter Breakdown (Max): - Frequency - Transition: - Noise Figure (dB Typ @ f): - Gain: - Power - Max: - DC Current Gain (hFE) (Min) @ Ic, Vce: - Current - Collector (Ic) (Max): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	Paket: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-

BFP405E6433HTMA1

Infineon Technologies

TRANSISTOR RF NPN 4.5V SOT-343

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 5V
Frequency - Transition: 25GHz
Noise Figure (dB Typ @ f): 1.25dB @ 1.8GHz
Gain: 23dB
Power - Max: 75mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 4V
Current - Collector (Ic) (Max): 25mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-82A, SOT-343
Supplier Device Package: PG-SOT343-4

Paket: SC-82A, SOT-343

Lager5.344

5V

25GHz

1.25dB @ 1.8GHz

23dB

75mW

60 @ 5mA, 4V

25mA

150°C (TJ)

Surface Mount

SC-82A, SOT-343

PG-SOT343-4

2SC4095-T1-A

CEL

RF TRANSISTOR NPN SOT-143

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 10V
Frequency - Transition: 10GHz
Noise Figure (dB Typ @ f): 1.8dB @ 2GHz
Gain: 12dB
Power - Max: 200mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 6V
Current - Collector (Ic) (Max): 35mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-253-4, TO-253AA
Supplier Device Package: SOT-143

Paket: TO-253-4, TO-253AA

Lager6.352

10V

10GHz

1.8dB @ 2GHz

12dB

200mW

50 @ 10mA, 6V

35mA

150°C (TJ)

Surface Mount

TO-253-4, TO-253AA

SOT-143

SD1536-03

Microsemi Corporation

TRANS RF BIPO 292W 10A M115

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 65V
Frequency - Transition: 1.025GHz ~ 1.15GHz
Noise Figure (dB Typ @ f): -
Gain: 8.4dB
Power - Max: 292W
DC Current Gain (hFE) (Min) @ Ic, Vce: 5 @ 100mA, 5V
Current - Collector (Ic) (Max): 10A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: M115
Supplier Device Package: M115

Paket: M115

Lager7.040

65V

1.025GHz ~ 1.15GHz

-

8.4dB

292W

5 @ 100mA, 5V

10A

200°C (TJ)

Chassis Mount

M115

EC3H02BA-TL-H

ON Semiconductor

TRANS NPN 10V 70A ECSP1006-3

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 10V
Frequency - Transition: 7GHz
Noise Figure (dB Typ @ f): 1dB @ 1GHz
Gain: 8.5dB
Power - Max: 100mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 20mA, 5V
Current - Collector (Ic) (Max): 70mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-XFDFN
Supplier Device Package: 3-ECSP1006

Paket: 3-XFDFN

Lager5.520

10V

7GHz

1dB @ 1GHz

8.5dB

100mW

120 @ 20mA, 5V

70mA

150°C (TJ)

Surface Mount

3-XFDFN

3-ECSP1006

HFA3128BZ

Intersil

IC TRANSISTOR ARRAY PNP 16-SOIC

Transistor Type: 5 PNP
Voltage - Collector Emitter Breakdown (Max): 15V
Frequency - Transition: 5.5GHz
Noise Figure (dB Typ @ f): 3.5dB @ 1GHz
Gain: -
Power - Max: 150mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 10mA, 2V
Current - Collector (Ic) (Max): 65mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 16-SOIC

Paket: 16-SOIC (0.154", 3.90mm Width)

Lager4.816

15V

5.5GHz

3.5dB @ 1GHz

-

150mW

20 @ 10mA, 2V

65mA

150°C (TJ)

Surface Mount

16-SOIC (0.154", 3.90mm Width)

16-SOIC

BF959

ON Semiconductor

TRANS RF NPN 20V 100MA TO-92

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 20V
Frequency - Transition: 700MHz
Noise Figure (dB Typ @ f): 3dB @ 200MHz
Gain: -
Power - Max: 625mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
Current - Collector (Ic) (Max): 100mA
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package: TO-92-3

Paket: TO-226-3, TO-92-3 (TO-226AA)

Lager6.176

20V

700MHz

3dB @ 200MHz

-

625mW

40 @ 20mA, 10V

100mA

-55°C ~ 150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA)

TO-92-3

BF240,112

NXP

TRANS NPN 40V 25MA SOT54

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 40V
Frequency - Transition: 150MHz
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: 300mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 67 @ 1mA, 10V
Current - Collector (Ic) (Max): 25mA
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package: TO-92-3

Paket: TO-226-3, TO-92-3 (TO-226AA)

Lager2.640

40V

150MHz

-

300mW

67 @ 1mA, 10V

25mA

150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA)

TO-92-3

NE68518-A

CEL

RF TRANSISTOR NPN SOT-343

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 6V
Frequency - Transition: 12GHz
Noise Figure (dB Typ @ f): 1.5dB @ 2GHz
Gain: 11dB
Power - Max: 150mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 10mA, 3V
Current - Collector (Ic) (Max): 30mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-82A, SOT-343
Supplier Device Package: SOT-343

Paket: SC-82A, SOT-343

Lager2.032

6V

12GHz

1.5dB @ 2GHz

11dB

150mW

75 @ 10mA, 3V

30mA

150°C (TJ)

Surface Mount

SC-82A, SOT-343

SOT-343

NE52418-T1-A

CEL

IC AMP HBT GAAS LN 4-SMINI

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 5V
Frequency - Transition: -
Noise Figure (dB Typ @ f): 1dB ~ 1.5dB @ 2GHz
Gain: 14dB ~ 16dB
Power - Max: 150mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 3mA, 2V
Current - Collector (Ic) (Max): 40mA
Operating Temperature: 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-82A, SOT-343
Supplier Device Package: 4-Super Mini Mold

Paket: SC-82A, SOT-343

Lager21.720

5V

-

1dB ~ 1.5dB @ 2GHz

14dB ~ 16dB

150mW

100 @ 3mA, 2V

40mA

125°C (TJ)

Surface Mount

SC-82A, SOT-343

4-Super Mini Mold

MPSH81

Fairchild/ON Semiconductor

TRANSISTOR RF PNP TO-92

Transistor Type: PNP
Voltage - Collector Emitter Breakdown (Max): 20V
Frequency - Transition: 600MHz
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: 350mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
Current - Collector (Ic) (Max): 50mA
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package: TO-92-3

Paket: TO-226-3, TO-92-3 (TO-226AA)

Lager4.288

20V

600MHz

-

350mW

60 @ 5mA, 10V

50mA

-55°C ~ 150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA)

TO-92-3

BFS17HTC

Diodes Incorporated

TRANSISTOR RF NPN SOT23-3

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 15V
Frequency - Transition: 1.3GHz
Noise Figure (dB Typ @ f): 4.5dB @ 500MHz
Gain: -
Power - Max: 330mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2mA, 1V
Current - Collector (Ic) (Max): 25mA
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3

Paket: TO-236-3, SC-59, SOT-23-3

Lager6.320

15V

1.3GHz

4.5dB @ 500MHz

-

330mW

70 @ 2mA, 1V

25mA

-55°C ~ 150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23-3

NE68019-T1-A

CEL

RF TRANSISTOR NPN SOT-523

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 10V
Frequency - Transition: 10GHz
Noise Figure (dB Typ @ f): 1.9dB @ 2GHz
Gain: 9.6dB
Power - Max: 100mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 3V
Current - Collector (Ic) (Max): 35mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-523
Supplier Device Package: SOT-523

Paket: SOT-523

Lager105.624

10V

10GHz

1.9dB @ 2GHz

9.6dB

100mW

80 @ 5mA, 3V

35mA

150°C (TJ)

Surface Mount

SOT-523

NE85630-T1

CEL

TRANS NPN 1GHZ SOT-323

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 4.5GHz
Noise Figure (dB Typ @ f): 1.3dB ~ 2.2dB @ 1GHz ~ 2GHz
Gain: 6dB ~ 12dB
Power - Max: 150mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 7mA, 3V
Current - Collector (Ic) (Max): 100mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SOT-323

Paket: SC-70, SOT-323

Lager2.416

12V

4.5GHz

1.3dB ~ 2.2dB @ 1GHz ~ 2GHz

6dB ~ 12dB

150mW

40 @ 7mA, 3V

100mA

150°C (TJ)

Surface Mount

SC-70, SOT-323

SOT-323

BFG540W/X,115

NXP

TRANS WIDEBAND 9GHZ SOT-343 15V

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 15V
Frequency - Transition: 9GHz
Noise Figure (dB Typ @ f): 1.3dB ~ 2.4dB @ 900MHz
Gain: -
Power - Max: 500mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 40mA, 8V
Current - Collector (Ic) (Max): 120mA
Operating Temperature: 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-82A, SOT-343
Supplier Device Package: CMPAK-4

Paket: SC-82A, SOT-343

Lager7.408

15V

9GHz

1.3dB ~ 2.4dB @ 900MHz

-

500mW

100 @ 40mA, 8V

120mA

175°C (TJ)

Surface Mount

SC-82A, SOT-343

CMPAK-4

MRF10502

M/A-Com Technology Solutions

TRANS NPN 500W 1025MHZ-1150MHZ

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 65V
Frequency - Transition: -
Noise Figure (dB Typ @ f): -
Gain: 9dB
Power - Max: 500W
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5A, 5V
Current - Collector (Ic) (Max): 29A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: 355J-02
Supplier Device Package: 355J-02, STYLE 1

Paket: 355J-02

Lager3.344

65V

-

9dB

500W

20 @ 5A, 5V

29A

200°C (TJ)

Chassis Mount

355J-02

355J-02, STYLE 1

PH3135-5S

M/A-Com Technology Solutions

TRANSISTOR 5W 33V 3.10-3.50GHZ

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 60V
Frequency - Transition: -
Noise Figure (dB Typ @ f): -
Gain: 8.5dB
Power - Max: 5W
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Current - Collector (Ic) (Max): 750mA
Operating Temperature: 200°C (TJ)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

Paket: -

Lager3.136

60V

-

8.5dB

5W

-

750mA

200°C (TJ)

-

MDS150

Microsemi Corporation

TRANS RF BIPO 350W 4A 55AW1

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 60V
Frequency - Transition: 1.03GHz ~ 1.09GHz
Noise Figure (dB Typ @ f): -
Gain: 10dB
Power - Max: 350W
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 500mA, 5V
Current - Collector (Ic) (Max): 4A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: 55AW
Supplier Device Package: 55AW

Paket: 55AW

Lager3.888

60V

1.03GHz ~ 1.09GHz

-

10dB

350W

20 @ 500mA, 5V

4A

200°C (TJ)

Chassis Mount

55AW

23A008

Microsemi Corporation

TRANS RF BIPO 5W 400MA55BT2

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 22V
Frequency - Transition: 3.7GHz
Noise Figure (dB Typ @ f): -
Gain: 8.5dB ~ 9.5dB
Power - Max: 5W
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 5V
Current - Collector (Ic) (Max): 400mA
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: 55BT
Supplier Device Package: 55BT

Paket: 55BT

Lager7.104

22V

3.7GHz

-

8.5dB ~ 9.5dB

5W

20 @ 100mA, 5V

400mA

200°C (TJ)

Chassis Mount

55BT

AT-30511-TR2G

Broadcom Limited

TRANS NPN BIPO 5.5V 8MA SOT-143

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 5.5V
Frequency - Transition: -
Noise Figure (dB Typ @ f): 1.1dB ~ 1.4dB @ 900MHz
Gain: 14dB ~ 16dB
Power - Max: 100mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 1mA, 2.7V
Current - Collector (Ic) (Max): 8mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-253-4, TO-253AA
Supplier Device Package: SOT-143

Paket: TO-253-4, TO-253AA

Lager7.632

5.5V

-

1.1dB ~ 1.4dB @ 900MHz

14dB ~ 16dB

100mW

70 @ 1mA, 2.7V

8mA

150°C (TJ)

Surface Mount

TO-253-4, TO-253AA

SOT-143

AT-32033-TR1G

Broadcom Limited

IC TRANS NPN BIPOLAR SOT-23

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 5.5V
Frequency - Transition: -
Noise Figure (dB Typ @ f): 1dB ~ 1.3dB @ 900MHz
Gain: 11dB ~ 12.5dB
Power - Max: 200mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2mA, 2.7V
Current - Collector (Ic) (Max): 32mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23

Paket: TO-236-3, SC-59, SOT-23-3

Lager2.128.416

5.5V

-

1dB ~ 1.3dB @ 900MHz

11dB ~ 12.5dB

200mW

70 @ 2mA, 2.7V

32mA

150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23

SMMBTH10-4LT3G

ON Semiconductor

TRANS NPN VHF/UHF SOT23

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 25V
Frequency - Transition: 800MHz
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: 225mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 4mA, 10V
Current - Collector (Ic) (Max): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)

Paket: TO-236-3, SC-59, SOT-23-3

Lager3.488

25V

800MHz

-

225mW

120 @ 4mA, 10V

-

-55°C ~ 150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23-3 (TO-236)

2SC4655JCL

Panasonic Electronic Components

TRANS NPN 20VCEO 30MA SSMINI-3

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 20V
Frequency - Transition: 230MHz
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: 125mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 1mA, 10V
Current - Collector (Ic) (Max): 30mA
Operating Temperature: 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-89, SOT-490
Supplier Device Package: SSMini3-F1

Paket: SC-89, SOT-490

Lager36.000

20V

230MHz

-

125mW

110 @ 1mA, 10V

30mA

125°C (TJ)

Surface Mount

SC-89, SOT-490

SSMini3-F1

NE696M01-T1

CEL

TRANS NPN 2GHZ SOT-363

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 6V
Frequency - Transition: 14GHz
Noise Figure (dB Typ @ f): 1.6dB @ 2GHz
Gain: -
Power - Max: 150mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 3V
Current - Collector (Ic) (Max): 30mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SOT-363

Paket: 6-TSSOP, SC-88, SOT-363

Lager73.554

6V

14GHz

1.6dB @ 2GHz

-

150mW

80 @ 10mA, 3V

30mA

150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

SOT-363

2N2857

Central Semiconductor Corp

TRANS NPN 15V 40MA TO-72

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 15V
Frequency - Transition: 1.9GHz
Noise Figure (dB Typ @ f): 4.5dB @ 450MHz
Gain: -
Power - Max: 200mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 3mA, 1V
Current - Collector (Ic) (Max): 40mA
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-206AF, TO-72-4 Metal Can
Supplier Device Package: TO-72

Paket: TO-206AF, TO-72-4 Metal Can

Lager20.976

15V

1.9GHz

4.5dB @ 450MHz

-

200mW

30 @ 3mA, 1V

40mA

-65°C ~ 200°C (TJ)

Through Hole

TO-206AF, TO-72-4 Metal Can

TO-72

LM3046M/NOPB

Texas Instruments

IC TRANSISTOR ARRAY 14-SOIC

Transistor Type: 5 NPN
Voltage - Collector Emitter Breakdown (Max): 15V
Frequency - Transition: -
Noise Figure (dB Typ @ f): 3.25dB @ 1kHz
Gain: -
Power - Max: 750mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 1mA, 3V
Current - Collector (Ic) (Max): 50mA
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 14-SOIC

Paket: 14-SOIC (0.154", 3.90mm Width)

Lager5.584

15V

-

3.25dB @ 1kHz

-

750mW

40 @ 1mA, 3V

50mA

-40°C ~ 85°C (TA)

Surface Mount

14-SOIC (0.154", 3.90mm Width)

14-SOIC

NE94433-T1B-A

CEL

TRANSISTOR NPN OSC FT=2GHZ SO

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 15V
Frequency - Transition: 2GHz
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: 150mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 10V
Current - Collector (Ic) (Max): 50mA
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3

Paket: -

Request a Quote

15V

2GHz

-

150mW

50 @ 5mA, 10V

50mA

-

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23-3

SD1332-05C

Microsemi Corporation

RF TRANS NPN 15V 5.5GHZ M150

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 15V
Frequency - Transition: 5.5GHz
Noise Figure (dB Typ @ f): 2.5dB @ 1GHz
Gain: 17dB
Power - Max: 180W
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 14mA, 10V
Current - Collector (Ic) (Max): 30A
Operating Temperature: 200°C
Mounting Type: Surface Mount
Package / Case: M150
Supplier Device Package: M150

Paket: -

Request a Quote

15V

5.5GHz

2.5dB @ 1GHz

17dB

180W

50 @ 14mA, 10V

30A

200°C

Surface Mount

M150

S200-50A

Microsemi Corporation

RF POWER TRANSISTOR

Transistor Type: -
Voltage - Collector Emitter Breakdown (Max): -
Frequency - Transition: -
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Current - Collector (Ic) (Max): -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

Paket: -

Request a Quote

-