Bild |
Teilenummer |
Hersteller |
Beschreibung |
Paket |
Lager |
Anzahl |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
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IXYS |
MOSFET N-CH 500V 66A SOT-227B
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Paket: SOT-227-4, miniBLOC |
Lager4.416 |
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MOSFET (Metal Oxide) | 500V | 66A | 10V | 4.5V @ 8mA | 199nC @ 10V | 6800pF @ 25V | ±30V | - | 735W (Tc) | 80 mOhm @ 500mA, 10V | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227B | SOT-227-4, miniBLOC |
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Microsemi Corporation |
MOSFET N-CH 550V 77A SOT-227
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Paket: SOT-227-4, miniBLOC |
Lager6.000 |
|
MOSFET (Metal Oxide) | 550V | 77A | 10V | 5V @ 5mA | 265nC @ 10V | 12400pF @ 25V | ±30V | - | 694W (Tc) | 50 mOhm @ 38.5A, 10V | -55°C ~ 150°C (TJ) | Chassis Mount | ISOTOP? | SOT-227-4, miniBLOC |
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ON Semiconductor |
MOSFET N-CH 25V 9.5A IPAK
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Paket: TO-251-3 Short Leads, IPak, TO-251AA |
Lager6.864 |
|
MOSFET (Metal Oxide) | 25V | 9.5A (Ta), 32A (Tc) | 4.5V, 10V | 2V @ 250µA | 16nC @ 5V | 1400pF @ 20V | ±20V | - | 1.3W (Ta), 50W (Tc) | 8.4 mOhm @ 30A, 10V | -55°C ~ 175°C (TJ) | Through Hole | I-Pak | TO-251-3 Short Leads, IPak, TO-251AA |
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NXP |
MOSFET N-CH 25V 75A DPAK
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Paket: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Lager5.024 |
|
MOSFET (Metal Oxide) | 25V | 75A (Tc) | 5V, 10V | 2V @ 1mA | 60nC @ 5V | 3500pF @ 20V | ±15V | - | 125W (Tc) | 5.8 mOhm @ 25A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Vishay Siliconix |
MOSFET P-CH 200V 3.6A DPAK
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Paket: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Lager4.240 |
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MOSFET (Metal Oxide) | 200V | 3.6A (Tc) | 10V | 4V @ 250µA | 20nC @ 10V | 340pF @ 25V | ±20V | - | 2.5W (Ta), 42W (Tc) | 1.5 Ohm @ 2.2A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Vishay Siliconix |
MOSFET N-CH 60V 20A TO220FP
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Paket: TO-220-3 Full Pack, Isolated Tab |
Lager103.548 |
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MOSFET (Metal Oxide) | 60V | 20A (Tc) | 10V | 4V @ 250µA | 46nC @ 10V | 1200pF @ 25V | ±20V | - | 42W (Tc) | 50 mOhm @ 12A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 Full Pack, Isolated Tab |
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Vishay Siliconix |
MOSFET P-CH 100V 1A 4-DIP
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Paket: 4-DIP (0.300", 7.62mm) |
Lager31.368 |
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MOSFET (Metal Oxide) | 100V | 1A (Ta) | 10V | 4V @ 250µA | 18nC @ 10V | 390pF @ 25V | ±20V | - | 1.3W (Ta) | 600 mOhm @ 600mA, 10V | -55°C ~ 175°C (TJ) | Through Hole | 4-DIP, Hexdip, HVMDIP | 4-DIP (0.300", 7.62mm) |
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NXP |
MOSFET N-CH 30V 120A TO220AB
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Paket: TO-220-3 |
Lager5.504 |
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MOSFET (Metal Oxide) | 30V | 120A (Tc) | 4.5V, 10V | 2.8V @ 1mA | 168nC @ 10V | 10918pF @ 25V | ±16V | - | 263W (Tc) | 2.4 mOhm @ 25A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 75V 180A D2PAK-7
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Paket: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB |
Lager6.368 |
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MOSFET (Metal Oxide) | 75V | 180A (Tc) | 10V | 4V @ 250µA | 260nC @ 10V | 7580pF @ 25V | ±20V | - | 300W (Tc) | 3.8 mOhm @ 110A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK (7-Lead) | TO-263-7, D2Pak (6 Leads + Tab), TO-263CB |
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Infineon Technologies |
MOSFET N-CH 40V 100A TO262-3-1
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Paket: TO-262-3 Long Leads, I2Pak, TO-262AA |
Lager2.368 |
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MOSFET (Metal Oxide) | 40V | 100A (Tc) | 10V | 4V @ 70µA | 90nC @ 10V | 7180pF @ 25V | ±20V | - | 115W (Tc) | 2.7 mOhm @ 100A, 10V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO262-3 | TO-262-3 Long Leads, I2Pak, TO-262AA |
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Infineon Technologies |
MOSFET N-CH 150V 21A D2PAK
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Paket: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Lager58.560 |
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MOSFET (Metal Oxide) | 150V | 21A (Tc) | 10V | 4V @ 250µA | 95nC @ 10V | 1300pF @ 25V | ±20V | - | 3.8W (Ta), 94W (Tc) | 82 mOhm @ 12A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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IXYS |
MOSFET N-CH 800V 11A TO-247AD
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Paket: TO-247-3 |
Lager2.704 |
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MOSFET (Metal Oxide) | 800V | 11A (Tc) | 10V | 4.5V @ 4mA | 155nC @ 10V | 4200pF @ 25V | ±20V | - | 300W (Tc) | 950 mOhm @ 500mA, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-247AD (IXFH) | TO-247-3 |
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Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 80V 11A TO220
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Paket: TO-220-3 |
Lager12.480 |
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MOSFET (Metal Oxide) | 80V | 11A (Ta), 105A (Tc) | 7V, 10V | 3.7V @ 250µA | 81nC @ 10V | 4870pF @ 40V | ±25V | - | 2.1W (Ta), 333W (Tc) | 7.2 mOhm @ 20A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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STMicroelectronics |
MOSFET N-CH 800V 8A DPAK
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Paket: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Lager3.424 |
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MOSFET (Metal Oxide) | 800V | 8A (Tc) | 10V | 5V @ 100µA | 15nC @ 10V | 427pF @ 100V | ±30V | - | 110W (Tc) | 630 mOhm @ 4A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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TSC America Inc. |
MOSFET, SINGLE, N-CHANNEL, PLANA
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Paket: TO-251-3 Short Leads, IPak, TO-251AA |
Lager4.832 |
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MOSFET (Metal Oxide) | 600V | 6A (Tc) | 10V | 4V @ 250µA | 20.7nC @ 10V | 1248pF @ 25V | ±30V | - | 89W (Tc) | 1.25 Ohm @ 3A, 10V | 150°C (TJ) | Through Hole | TO-251 (IPAK) | TO-251-3 Short Leads, IPak, TO-251AA |
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Infineon Technologies |
MOSFET N-CH 60V 43A TO220-3-31
|
Paket: TO-220-3 Full Pack |
Lager19.872 |
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MOSFET (Metal Oxide) | 60V | 43A (Tc) | 10V | 4V @ 34µA | 48nC @ 10V | 3900pF @ 30V | ±20V | - | 33W (Tc) | 9.3 mOhm @ 40A, 10V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3-31 Full Pack | TO-220-3 Full Pack |
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Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 30V 13A 8SOIC
|
Paket: 8-SOIC (0.154", 3.90mm Width) |
Lager1.036.056 |
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MOSFET (Metal Oxide) | 30V | 13A (Ta) | 4.5V, 10V | 2.5V @ 250µA | 17nC @ 10V | 910pF @ 15V | ±20V | - | 3.1W (Ta) | 11.5 mOhm @ 12A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC | 8-SOIC (0.154", 3.90mm Width) |
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Fairchild/ON Semiconductor |
MOSFET N-CH 100V 3.4A 8-SOIC
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Paket: 8-SOIC (0.154", 3.90mm Width) |
Lager133.956 |
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MOSFET (Metal Oxide) | 100V | 3.4A (Ta) | 6V, 10V | 4V @ 250µA | 4nC @ 10V | 208pF @ 50V | ±20V | - | 5W (Ta) | 105 mOhm @ 3.4A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Vishay Siliconix |
MOSFET N-CH 80V 10.2A/33.7A PPAK
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Paket: - |
Lager24.432 |
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MOSFET (Metal Oxide) | 80 V | 10.2A (Ta), 33.7A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 30 nC @ 10 V | 1250 pF @ 40 V | ±20V | - | 3.6W (Ta), 39W (Tc) | 15.6mOhm @ 10A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 1212-8 | PowerPAK® 1212-8 |
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Renesas Electronics Corporation |
TRANSISTOR
|
Paket: - |
Request a Quote |
|
- | - | 25A (Tc) | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
MOSFET N-CH 600V 9.2A TO252-3
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Paket: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 600 V | 9.2A (Tc) | 10V | 3.5V @ 280µA | 28 nC @ 10 V | 620 pF @ 100 V | ±20V | - | 74W (Tc) | 450mOhm @ 3.4A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
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Infineon Technologies |
SINGLE N-CHANNEL LINEAR FET 80V
|
Paket: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 80 V | 35A (Ta), 333A (Tc) | 10V | 4.1V @ 250µA | 158 nC @ 10 V | 820 pF @ 40 V | ±20V | - | 3.1W (Ta), 278W (Tc) | 1.3mOhm @ 150A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-HSOF-8 | 8-PowerSFN |
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Infineon Technologies |
MOSFET N-CH 30V 12A/40A TSDSON
|
Paket: - |
Lager109.578 |
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MOSFET (Metal Oxide) | 30 V | 12A (Ta), 40A (Tc) | 4.5V, 10V | 2V @ 250µA | 10 nC @ 10 V | 670 pF @ 15 V | ±20V | - | - | 6.5mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TSDSON-8-FL | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 100V 11A/40A TSDSON
|
Paket: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 100 V | 11A (Ta), 40A (Tc) | 4.5V, 10V | 2.3V @ 36µA | 15 nC @ 4.5 V | 2100 pF @ 50 V | ±20V | - | 2.1W (Ta), 69W (Tc) | 9.6mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8 FL | 8-PowerTDFN |
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Microchip Technology |
MOSFET N-CH 1000V 4A D3PAK
|
Paket: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 1000 V | 4A (Tc) | - | 5V @ 1mA | 34 nC @ 10 V | 694 pF @ 25 V | - | - | - | 3Ohm @ 2A, 10V | - | Surface Mount | D3PAK | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA |
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YAGEO XSEMI |
FET P-CH 30V 33.5A 125A PMPAK
|
Paket: - |
Lager3.000 |
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MOSFET (Metal Oxide) | 30 V | 33.5A (Ta), 125A (Tc) | 4.5V, 10V | 3V @ 250µA | 122 nC @ 4.5 V | 15040 pF @ 15 V | ±20V | - | 5W (Ta), 69.4W (Tc) | 3mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PMPAK® 5 x 6 | 8-PowerLDFN |
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Vishay Siliconix |
N-CHANNEL 200-V (D-S) MOSFET D2P
|
Paket: - |
Lager1.401 |
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MOSFET (Metal Oxide) | 200 V | 150A (Tc) | 7.5V, 10V | 4V @ 250µA | 110 nC @ 10 V | 3930 pF @ 100 V | ±20V | - | 375W (Tc) | 11.4mOhm @ 16A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | TO-263 (D2PAK) | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
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STMicroelectronics |
SILICON CARBIDE POWER MOSFET 120
|
Paket: - |
Request a Quote |
|
SiCFET (Silicon Carbide) | 1200 V | 90A (Tc) | 18V | 4.9V @ 1mA | 150 nC @ 18 V | 3540 pF @ 800 V | +22V, -10V | - | 469W (Tc) | 30mOhm @ 50A, 18V | -55°C ~ 175°C (TJ) | Surface Mount | H2PAK-7 | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA |