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Transistoren - FETs, MOSFET - Einzeln

Aufzeichnungen 42.029
Page  1.064/1.502
Bild
Teilenummer
Hersteller
Beschreibung
Paket
Lager
Anzahl
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
FET Feature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
BSS126L6906HTSA1
Infineon Technologies

MOSFET N-CH 600V 0.021A SOT-23

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 21mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 0V, 10V
  • Vgs(th) (Max) @ Id: 1.6V @ 8µA
  • Gate Charge (Qg) (Max) @ Vgs: 2.1nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 28pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: Depletion Mode
  • Power Dissipation (Max): 500mW (Ta)
  • Rds On (Max) @ Id, Vgs: 500 Ohm @ 16mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-SOT23-3
  • Package / Case: TO-236-3, SC-59, SOT-23-3
Paket: TO-236-3, SC-59, SOT-23-3
Lager3.264
MOSFET (Metal Oxide)
600V
21mA (Ta)
0V, 10V
1.6V @ 8µA
2.1nC @ 5V
28pF @ 25V
±20V
Depletion Mode
500mW (Ta)
500 Ohm @ 16mA, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PG-SOT23-3
TO-236-3, SC-59, SOT-23-3
IXFD15N100-8X
IXYS

MOSFET N-CH

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
Paket: -
Lager4.912
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
2SK3816-DL-1EX
ON Semiconductor

MOSFET N-CH

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
Paket: -
Lager7.472
-
-
-
4V, 10V
-
-
-
±20V
-
-
-
-
-
-
-
AO7413_030
Alpha & Omega Semiconductor Inc.

MOSFET P-CH SC70-3

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
  • Vgs(th) (Max) @ Id: 1.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 10V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 350mW (Ta)
  • Rds On (Max) @ Id, Vgs: 113 mOhm @ 1.4A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SC-70-3
  • Package / Case: SC-70, SOT-323
Paket: SC-70, SOT-323
Lager4.272
MOSFET (Metal Oxide)
20V
1.4A (Ta)
2.5V, 10V
1.2V @ 250µA
4.5nC @ 4.5V
400pF @ 10V
±12V
-
350mW (Ta)
113 mOhm @ 1.4A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
SC-70-3
SC-70, SOT-323
AON1610
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 20V 4A 6DFN

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1.1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 14nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 748pF @ 10V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 1.8W (Ta)
  • Rds On (Max) @ Id, Vgs: 29 mOhm @ 4A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 6-DFN (1.6x1.6)
  • Package / Case: 6-PowerUFDFN
Paket: 6-PowerUFDFN
Lager2.688
MOSFET (Metal Oxide)
20V
4A (Ta)
1.5V, 4.5V
1.1V @ 250µA
14nC @ 4.5V
748pF @ 10V
±8V
-
1.8W (Ta)
29 mOhm @ 4A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
6-DFN (1.6x1.6)
6-PowerUFDFN
NTHD2110TT1G
ON Semiconductor

MOSFET P-CH 12V 4.5A CHIPFET

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 12V
  • Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Vgs(th) (Max) @ Id: 850mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 14nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1072pF @ 6V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 1.1W (Ta)
  • Rds On (Max) @ Id, Vgs: 40 mOhm @ 6.4A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: ChipFET?
  • Package / Case: 8-SMD, Flat Lead
Paket: 8-SMD, Flat Lead
Lager4.896
MOSFET (Metal Oxide)
12V
4.5A (Ta)
1.8V, 4.5V
850mV @ 250µA
14nC @ 4.5V
1072pF @ 6V
±8V
-
1.1W (Ta)
40 mOhm @ 6.4A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
ChipFET?
8-SMD, Flat Lead
IXTP55N075T
IXYS

MOSFET N-CH 75V 55A TO-220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 75V
  • Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 25µA
  • Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 130W (Tc)
  • Rds On (Max) @ Id, Vgs: 19.5 mOhm @ 27.5A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
Paket: TO-220-3
Lager7.792
MOSFET (Metal Oxide)
75V
55A (Tc)
10V
4V @ 25µA
33nC @ 10V
1400pF @ 25V
±20V
-
130W (Tc)
19.5 mOhm @ 27.5A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-220AB
TO-220-3
IRFI740BTU
Fairchild/ON Semiconductor

MOSFET N-CH 400V 10A I2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 400V
  • Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 53nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 3.13W (Ta), 134W (Tc)
  • Rds On (Max) @ Id, Vgs: 540 mOhm @ 5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: I2PAK
  • Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
Paket: TO-262-3 Long Leads, I2Pak, TO-262AA
Lager2.928
MOSFET (Metal Oxide)
400V
10A (Tc)
10V
4V @ 250µA
53nC @ 10V
1800pF @ 25V
±30V
-
3.13W (Ta), 134W (Tc)
540 mOhm @ 5A, 10V
-55°C ~ 150°C (TJ)
Through Hole
I2PAK
TO-262-3 Long Leads, I2Pak, TO-262AA
FDM606P
Fairchild/ON Semiconductor

MOSFET P-CH 20V 6.8A MICROFET

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 6.8A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 30nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 2200pF @ 10V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 1.92W (Ta)
  • Rds On (Max) @ Id, Vgs: 30 mOhm @ 6.8A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-MLP, MicroFET (3x2)
  • Package / Case: 8-SMD, Flat Lead Exposed Pad
Paket: 8-SMD, Flat Lead Exposed Pad
Lager5.328
MOSFET (Metal Oxide)
20V
6.8A (Tc)
1.8V, 4.5V
1.5V @ 250µA
30nC @ 4.5V
2200pF @ 10V
±8V
-
1.92W (Ta)
30 mOhm @ 6.8A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
8-MLP, MicroFET (3x2)
8-SMD, Flat Lead Exposed Pad
hot IRFP450
IXYS

MOSFET N-CH 500V 14A TO-247AD

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2800pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 190W (Tc)
  • Rds On (Max) @ Id, Vgs: 400 mOhm @ 8.4A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247AD
  • Package / Case: TO-3P-3 Full Pack
Paket: TO-3P-3 Full Pack
Lager14.988
MOSFET (Metal Oxide)
500V
14A (Tc)
10V
4V @ 250µA
150nC @ 10V
2800pF @ 25V
±20V
-
190W (Tc)
400 mOhm @ 8.4A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-247AD
TO-3P-3 Full Pack
hot STD70N02L
STMicroelectronics

MOSFET N-CH 25V 60A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 25V
  • Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
  • Vgs(th) (Max) @ Id: 1.8V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 16V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 60W (Tc)
  • Rds On (Max) @ Id, Vgs: 8 mOhm @ 30A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D-Pak
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Paket: TO-252-3, DPak (2 Leads + Tab), SC-63
Lager866.820
MOSFET (Metal Oxide)
25V
60A (Tc)
5V, 10V
1.8V @ 250µA
32nC @ 10V
1400pF @ 16V
±20V
-
60W (Tc)
8 mOhm @ 30A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
D-Pak
TO-252-3, DPak (2 Leads + Tab), SC-63
IRFR220NTRRPBF
Infineon Technologies

MOSFET N-CH 200V 5A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 43W (Tc)
  • Rds On (Max) @ Id, Vgs: 600 mOhm @ 2.9A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D-Pak
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Paket: TO-252-3, DPak (2 Leads + Tab), SC-63
Lager2.560
MOSFET (Metal Oxide)
200V
5A (Tc)
10V
4V @ 250µA
23nC @ 10V
300pF @ 25V
±20V
-
43W (Tc)
600 mOhm @ 2.9A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
D-Pak
TO-252-3, DPak (2 Leads + Tab), SC-63
MMIX1T550N055T2
IXYS

MOSFET N-CH 55V 550A SMPD

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 55V
  • Current - Continuous Drain (Id) @ 25°C: 550A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.8V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 595nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 40000pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 830W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.3 mOhm @ 100A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 24-SMPD
  • Package / Case: 24-PowerSMD, 21 Leads
Paket: 24-PowerSMD, 21 Leads
Lager6.640
MOSFET (Metal Oxide)
55V
550A (Tc)
10V
3.8V @ 250µA
595nC @ 10V
40000pF @ 25V
±20V
-
830W (Tc)
1.3 mOhm @ 100A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
24-SMPD
24-PowerSMD, 21 Leads
NVMFS6B03NLT1G
ON Semiconductor

MOSFET N-CH 100V 20A 5DFN

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 9.4nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 5320pF @ 25V
  • Vgs (Max): ±16V
  • FET Feature: -
  • Power Dissipation (Max): 3.9W (Ta), 198W (Tc)
  • Rds On (Max) @ Id, Vgs: 4 mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 5-DFN (5x6) (8-SOFL)
  • Package / Case: 8-PowerTDFN
Paket: 8-PowerTDFN
Lager4.880
MOSFET (Metal Oxide)
100V
-
4.5V, 10V
3V @ 250µA
9.4nC @ 10V
5320pF @ 25V
±16V
-
3.9W (Ta), 198W (Tc)
4 mOhm @ 20A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
5-DFN (5x6) (8-SOFL)
8-PowerTDFN
IXTQ42N25P
IXYS

MOSFET N-CH 250V 42A TO-3P

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 250V
  • Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2300pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 300W (Tc)
  • Rds On (Max) @ Id, Vgs: 84 mOhm @ 500mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-3P
  • Package / Case: TO-3P-3, SC-65-3
Paket: TO-3P-3, SC-65-3
Lager7.312
MOSFET (Metal Oxide)
250V
42A (Tc)
10V
5.5V @ 250µA
70nC @ 10V
2300pF @ 25V
±20V
-
300W (Tc)
84 mOhm @ 500mA, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-3P
TO-3P-3, SC-65-3
hot STD100N3LF3
STMicroelectronics

MOSFET N-CH 30V 80A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 27nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 2060pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 110W (Tc)
  • Rds On (Max) @ Id, Vgs: 5.5 mOhm @ 40A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D-Pak
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Paket: TO-252-3, DPak (2 Leads + Tab), SC-63
Lager692.268
MOSFET (Metal Oxide)
30V
80A (Tc)
5V, 10V
2.5V @ 250µA
27nC @ 5V
2060pF @ 25V
±20V
-
110W (Tc)
5.5 mOhm @ 40A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
D-Pak
TO-252-3, DPak (2 Leads + Tab), SC-63
hot FDN371N
Fairchild/ON Semiconductor

MOSFET N-CH 20V 2.5A SSOT-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 10.7nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 815pF @ 10V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 500mW (Ta)
  • Rds On (Max) @ Id, Vgs: 50 mOhm @ 2.5A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SuperSOT-3
  • Package / Case: TO-236-3, SC-59, SOT-23-3
Paket: TO-236-3, SC-59, SOT-23-3
Lager37.500
MOSFET (Metal Oxide)
20V
2.5A (Ta)
2.5V, 4.5V
1.5V @ 250µA
10.7nC @ 4.5V
815pF @ 10V
±12V
-
500mW (Ta)
50 mOhm @ 2.5A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
SuperSOT-3
TO-236-3, SC-59, SOT-23-3
APT5010JLLU3
Microsemi Corporation

MOSFET N-CH 500V 41A SOT227

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 41A
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 2.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 96nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 4360pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 378W (Tc)
  • Rds On (Max) @ Id, Vgs: 100 mOhm @ 23A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Supplier Device Package: SOT-227
  • Package / Case: SOT-227-4, miniBLOC
Paket: SOT-227-4, miniBLOC
Lager6.096
MOSFET (Metal Oxide)
500V
41A
10V
5V @ 2.5mA
96nC @ 10V
4360pF @ 25V
±30V
-
378W (Tc)
100 mOhm @ 23A, 10V
-55°C ~ 150°C (TJ)
Chassis Mount
SOT-227
SOT-227-4, miniBLOC
hot IRF6668TRPBF
Infineon Technologies

MOSFET N-CH 80V 55A DIRECTFET

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 80V
  • Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.9V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 31nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1320pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.8W (Ta), 89W (Tc)
  • Rds On (Max) @ Id, Vgs: 15 mOhm @ 12A, 10V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DIRECTFET? MZ
  • Package / Case: DirectFET? Isometric MZ
Paket: DirectFET? Isometric MZ
Lager375.864
MOSFET (Metal Oxide)
80V
55A (Tc)
10V
4.9V @ 100µA
31nC @ 10V
1320pF @ 25V
±20V
-
2.8W (Ta), 89W (Tc)
15 mOhm @ 12A, 10V
-40°C ~ 150°C (TJ)
Surface Mount
DIRECTFET? MZ
DirectFET? Isometric MZ
DMN2027UPS-13
Diodes Incorporated

MOSFET N-CH 20V 10A POWERDI5060

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 36A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1.3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 11.6nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1091pF @ 10V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 1.1W (Ta)
  • Rds On (Max) @ Id, Vgs: 12.5 mOhm @ 9.4A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerDI5060-8
  • Package / Case: 8-PowerTDFN
Paket: 8-PowerTDFN
Lager5.504
MOSFET (Metal Oxide)
20V
10A (Ta), 36A (Tc)
2.5V, 4.5V
1.3V @ 250µA
11.6nC @ 4.5V
1091pF @ 10V
±12V
-
1.1W (Ta)
12.5 mOhm @ 9.4A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
PowerDI5060-8
8-PowerTDFN
hot ZVP1320FTA
Diodes Incorporated

MOSFET P-CH 200V 0.035A SOT23-3

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 35mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 350mW (Ta)
  • Rds On (Max) @ Id, Vgs: 80 Ohm @ 50mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23-3
  • Package / Case: TO-236-3, SC-59, SOT-23-3
Paket: TO-236-3, SC-59, SOT-23-3
Lager318.132
MOSFET (Metal Oxide)
200V
35mA (Ta)
10V
3.5V @ 1mA
-
50pF @ 25V
±20V
-
350mW (Ta)
80 Ohm @ 50mA, 10V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
NVBG060N090SC1
onsemi

MOSFET N-CH 900V 5.8/44A D2PAK-7

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 900 V
  • Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta), 44A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 15V
  • Vgs(th) (Max) @ Id: 4.3V @ 5mA
  • Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 15 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 450 V
  • Vgs (Max): +19V, -10V
  • FET Feature: -
  • Power Dissipation (Max): 3.6W (Ta), 211W (Tc)
  • Rds On (Max) @ Id, Vgs: 84mOhm @ 20A, 15V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK-7
  • Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Paket: -
Lager4.380
MOSFET (Metal Oxide)
900 V
5.8A (Ta), 44A (Tc)
15V
4.3V @ 5mA
88 nC @ 15 V
1800 pF @ 450 V
+19V, -10V
-
3.6W (Ta), 211W (Tc)
84mOhm @ 20A, 15V
-55°C ~ 175°C (TJ)
Surface Mount
D2PAK-7
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
DMT8008LSS-13
Diodes Incorporated

MOSFET BVDSS: 61V-100V SO-8

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 80 V
  • Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 32A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.8V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2840 pF @ 40 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.3W (Ta)
  • Rds On (Max) @ Id, Vgs: 8mOhm @ 13A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
Paket: -
Request a Quote
MOSFET (Metal Oxide)
80 V
13A (Ta), 32A (Tc)
4.5V, 10V
2.8V @ 250µA
47 nC @ 10 V
2840 pF @ 40 V
±20V
-
1.3W (Ta)
8mOhm @ 13A, 10V
-55°C ~ 150°C (TJ)
-
-
-
MSC180SMA120B
Microchip Technology

MOSFET 1200V 25A TO-247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 1200 V
  • Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 5V, 20V
  • Vgs(th) (Max) @ Id: 4.5V @ 500µA
  • Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 20 V
  • Input Capacitance (Ciss) (Max) @ Vds: 530 pF @ 1000 V
  • Vgs (Max): +23V, -10V
  • FET Feature: -
  • Power Dissipation (Max): 147W (Tc)
  • Rds On (Max) @ Id, Vgs: 225mOhm @ 8A, 20V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247-3
  • Package / Case: TO-247-3
Paket: -
Lager3
MOSFET (Metal Oxide)
1200 V
21A (Tc)
5V, 20V
4.5V @ 500µA
36 nC @ 20 V
530 pF @ 1000 V
+23V, -10V
-
147W (Tc)
225mOhm @ 8A, 20V
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247-3
DMN29M9UFDF-13
Diodes Incorporated

MOSFET BVDSS: 25V~30V U-DFN2020-

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20 V
  • Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Vgs(th) (Max) @ Id: 1.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 14.6 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 655 pF @ 8 V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 1.2W (Ta)
  • Rds On (Max) @ Id, Vgs: 13.5mOhm @ 5A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: U-DFN2020-6 (Type F)
  • Package / Case: 6-UDFN Exposed Pad
Paket: -
Request a Quote
MOSFET (Metal Oxide)
20 V
11A (Ta)
1.8V, 4.5V
1.2V @ 250µA
14.6 nC @ 10 V
655 pF @ 8 V
±12V
-
1.2W (Ta)
13.5mOhm @ 5A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
U-DFN2020-6 (Type F)
6-UDFN Exposed Pad
DMTH8008LFG-13
Diodes Incorporated

MOSFET BVDSS: 61V~100V POWERDI33

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 80 V
  • Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 70A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 37.7 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2254 pF @ 40 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.2W (Ta), 50W (Tc)
  • Rds On (Max) @ Id, Vgs: 6.9mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: POWERDI3333-8
  • Package / Case: 8-PowerVDFN
Paket: -
Request a Quote
MOSFET (Metal Oxide)
80 V
17A (Ta), 70A (Tc)
4.5V, 10V
2.5V @ 1mA
37.7 nC @ 10 V
2254 pF @ 40 V
±20V
-
1.2W (Ta), 50W (Tc)
6.9mOhm @ 20A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
POWERDI3333-8
8-PowerVDFN
NVMFS5C406NLT1G
onsemi

MOSFET N-CH 40V 53A/362A 5DFN

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 53A (Ta), 362A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 280µA
  • Gate Charge (Qg) (Max) @ Vgs: 149 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 9400 pF @ 20 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.9W (Ta), 179W (Tc)
  • Rds On (Max) @ Id, Vgs: 0.7mOhm @ 50A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 5-DFN (5x6) (8-SOFL)
  • Package / Case: 8-PowerTDFN, 5 Leads
Paket: -
Request a Quote
MOSFET (Metal Oxide)
40 V
53A (Ta), 362A (Tc)
4.5V, 10V
2V @ 280µA
149 nC @ 10 V
9400 pF @ 20 V
±20V
-
3.9W (Ta), 179W (Tc)
0.7mOhm @ 50A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
5-DFN (5x6) (8-SOFL)
8-PowerTDFN, 5 Leads
SPP04N60S5
Infineon Technologies

N-CHANNEL POWER MOSFET

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5.5V @ 200µA
  • Gate Charge (Qg) (Max) @ Vgs: 22.9 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 580 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 50W (Tc)
  • Rds On (Max) @ Id, Vgs: 950mOhm @ 2.8A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO220-3-1
  • Package / Case: TO-220-3
Paket: -
Request a Quote
MOSFET (Metal Oxide)
600 V
4.5A (Tc)
10V
5.5V @ 200µA
22.9 nC @ 10 V
580 pF @ 25 V
±20V
-
50W (Tc)
950mOhm @ 2.8A, 10V
-55°C ~ 150°C (TJ)
Through Hole
PG-TO220-3-1
TO-220-3