Transistoren - FETs, MOSFET - Einzeln

IRF7811WGTRPBF

Infineon Technologies

MOSFET N-CH 30V 14A 8-SOIC

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V
• Vgs(th) (Max) @ Id: 1V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 33nC @ 5V
• Input Capacitance (Ciss) (Max) @ Vds: 2335pF @ 16V
• Vgs (Max): ±12V
• FET Feature: -
• Power Dissipation (Max): 3.1W (Ta)
• Rds On (Max) @ Id, Vgs: 12 mOhm @ 15A, 4.5V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 8-SO
• Package / Case: 8-SOIC (0.154", 3.90mm Width)

Paket: 8-SOIC (0.154", 3.90mm Width)

IRF7413GTRPBF

Infineon Technologies

MOSFET N-CH 30V 13A 8-SOIC

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 3V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 79nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 2.5W (Ta)
• Rds On (Max) @ Id, Vgs: 11 mOhm @ 7.3A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 8-SO
• Package / Case: 8-SOIC (0.154", 3.90mm Width)

Paket: 8-SOIC (0.154", 3.90mm Width)

IRL3715ZCSTRLP

Infineon Technologies

MOSFET N-CH 20V 50A D2PAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.55V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 870pF @ 10V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 45W (Tc)
• Rds On (Max) @ Id, Vgs: 11 mOhm @ 15A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D2PAK
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Paket: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IRL3103SPBF

Infineon Technologies

MOSFET N-CH 30V 64A D2PAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 1V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 33nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 1650pF @ 25V
• Vgs (Max): ±16V
• FET Feature: -
• Power Dissipation (Max): 94W (Tc)
• Rds On (Max) @ Id, Vgs: 12 mOhm @ 34A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D2PAK
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Paket: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

PH2230DLSX

Nexperia USA Inc.

MOSFET N-CH TRENCH

• FET Type: -
• Technology: -
• Drain to Source Voltage (Vdss): -
• Current - Continuous Drain (Id) @ 25°C: -
• Drive Voltage (Max Rds On, Min Rds On): -
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: -
• Vgs (Max): -
• FET Feature: -
• Power Dissipation (Max): -
• Rds On (Max) @ Id, Vgs: -
• Operating Temperature: -
• Mounting Type: -
• Supplier Device Package: -
• Package / Case: -

Paket: -

PSMN1R6-60CLJ

Nexperia USA Inc.

MOSFET N-CH 60V D2PAK

• FET Type: -
• Technology: -
• Drain to Source Voltage (Vdss): -
• Current - Continuous Drain (Id) @ 25°C: -
• Drive Voltage (Max Rds On, Min Rds On): -
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: -
• Vgs (Max): -
• FET Feature: -
• Power Dissipation (Max): -
• Rds On (Max) @ Id, Vgs: -
• Operating Temperature: -
• Mounting Type: -
• Supplier Device Package: -
• Package / Case: -

Paket: -

BUK7108-40AIE,118

Nexperia USA Inc.

MOSFET N-CH 40V 75A D2PAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 40V
• Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 84nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 3140pF @ 25V
• Vgs (Max): ±20V
• FET Feature: Current Sensing
• Power Dissipation (Max): 221W (Tc)
• Rds On (Max) @ Id, Vgs: 8 mOhm @ 50A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: SOT-426
• Package / Case: TO-263-5, D2Pak (4 Leads + Tab), TO-263BB

Paket: TO-263-5, D2Pak (4 Leads + Tab), TO-263BB

SI5857DU-T1-E3

Vishay Siliconix

MOSFET P-CH 20V 6A PPAK CHIPFET

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
• Vgs(th) (Max) @ Id: 1.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 480pF @ 10V
• Vgs (Max): ±12V
• FET Feature: Schottky Diode (Isolated)
• Power Dissipation (Max): 2.3W (Ta), 10.4W (Tc)
• Rds On (Max) @ Id, Vgs: 58 mOhm @ 3.6A, 4.5V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PowerPAK? ChipFet Dual
• Package / Case: PowerPAK? ChipFET? Dual

Paket: PowerPAK? ChipFET? Dual

APT30M85BVFRG

Microsemi Corporation

MOSFET N-CH 300V 40A TO-247

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 300V
• Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 195nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 4950pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 300W (Tc)
• Rds On (Max) @ Id, Vgs: 85 mOhm @ 500mA, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-247 [B]
• Package / Case: TO-247-3

Paket: TO-247-3

IRFR9014NTRR

Vishay Siliconix

MOSFET P-CH 60V 5.1A DPAK

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 5.1A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 270pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
• Rds On (Max) @ Id, Vgs: 500 mOhm @ 3.1A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D-Pak
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

Paket: TO-252-3, DPak (2 Leads + Tab), SC-63

IXFB62N80Q3

IXYS

MOSFET N-CH 800V 62A PLUS264

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 800V
• Current - Continuous Drain (Id) @ 25°C: 62A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 6.5V @ 8mA
• Gate Charge (Qg) (Max) @ Vgs: 270nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 13600pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 1560W (Tc)
• Rds On (Max) @ Id, Vgs: 140 mOhm @ 31A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: PLUS264?
• Package / Case: TO-264-3, TO-264AA

Paket: TO-264-3, TO-264AA

IXFR48N60Q3

IXYS

MOSFET N-CH 600V 32A ISOPLUS247

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600V
• Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 6.5V @ 4mA
• Gate Charge (Qg) (Max) @ Vgs: 140nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 7020pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 500W (Tc)
• Rds On (Max) @ Id, Vgs: 154 mOhm @ 24A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: ISOPLUS247?
• Package / Case: TO-247-3

Paket: TO-247-3

IPD80R900P7ATMA1

Infineon Technologies

MOSFET N-CH 800V COOLMOS TO252-3

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 800V
• Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 3.5V @ 110µA
• Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 500V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 45W (Tc)
• Rds On (Max) @ Id, Vgs: 900 mOhm @ 2.2A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-TO252-3
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

Paket: TO-252-3, DPak (2 Leads + Tab), SC-63

FQPF3N80C

Fairchild/ON Semiconductor

MOSFET N-CH 800V 3A TO-220F

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 800V
• Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 16.5nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 705pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 39W (Tc)
• Rds On (Max) @ Id, Vgs: 4.8 Ohm @ 1.5A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220F
• Package / Case: TO-220-3 Full Pack

Paket: TO-220-3 Full Pack

SPD04N50C3

Infineon Technologies

MOSFET N-CH 560V 4.5A DPAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 560V
• Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 3.9V @ 200µA
• Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 470pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 50W (Tc)
• Rds On (Max) @ Id, Vgs: 950 mOhm @ 2.8A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-TO252-3
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

Paket: TO-252-3, DPak (2 Leads + Tab), SC-63

PMV32UP,215

Nexperia USA Inc.

MOSFET P-CH 20V 4A SOT-23

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
• Vgs(th) (Max) @ Id: 950mV @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 15.5nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 1890pF @ 10V
• Vgs (Max): ±8V
• FET Feature: -
• Power Dissipation (Max): 510mW (Ta)
• Rds On (Max) @ Id, Vgs: 36 mOhm @ 2.4A, 4.5V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: TO-236AB (SOT23)
• Package / Case: TO-236-3, SC-59, SOT-23-3

Paket: TO-236-3, SC-59, SOT-23-3

TK12J60U(F)

Toshiba Semiconductor and Storage

MOSFET N-CH 600V 12A TO-3PN

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600V
• Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 720pF @ 10V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 144W (Tc)
• Rds On (Max) @ Id, Vgs: 400 mOhm @ 6A, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-3P(N)
• Package / Case: TO-3P-3, SC-65-3

Paket: TO-3P-3, SC-65-3

BSS127H6327XTSA2

Infineon Technologies

MOSFET N-CH 600V 0.021A SOT-23

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600V
• Current - Continuous Drain (Id) @ 25°C: 21mA (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.6V @ 8µA
• Gate Charge (Qg) (Max) @ Vgs: 1nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 28pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 500mW (Ta)
• Rds On (Max) @ Id, Vgs: 500 Ohm @ 16mA, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-SOT23-3
• Package / Case: TO-236-3, SC-59, SOT-23-3

Paket: TO-236-3, SC-59, SOT-23-3

FDD6630A

Fairchild/ON Semiconductor

MOSFET N-CH 30V 21A D-PAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 21A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 3V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 7nC @ 5V
• Input Capacitance (Ciss) (Max) @ Vds: 462pF @ 15V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 28W (Ta)
• Rds On (Max) @ Id, Vgs: 35 mOhm @ 7.6A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: TO-252
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

Paket: TO-252-3, DPak (2 Leads + Tab), SC-63

SI2333DS-T1-E3

Vishay Siliconix

MOSFET P-CH 12V 4.1A SOT23-3

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 12V
• Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
• Vgs(th) (Max) @ Id: 1V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 18nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 6V
• Vgs (Max): ±8V
• FET Feature: -
• Power Dissipation (Max): 750mW (Ta)
• Rds On (Max) @ Id, Vgs: 32 mOhm @ 5.3A, 4.5V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: SOT-23-3 (TO-236)
• Package / Case: TO-236-3, SC-59, SOT-23-3

Paket: TO-236-3, SC-59, SOT-23-3

IPF067N20NM6ATMA1

Infineon Technologies

TRENCH >=100V

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 200 V
• Current - Continuous Drain (Id) @ 25°C: 15.4A (Ta), 138A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
• Vgs(th) (Max) @ Id: 4.5V @ 253µA
• Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 7300 pF @ 100 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 3.8W (Ta), 300W (Tc)
• Rds On (Max) @ Id, Vgs: 6.2mOhm @ 100A, 15V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-TO263-7-3
• Package / Case: TO-263-7, D2PAK (6 Leads + Tab)

Paket: -

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DMTH10H009LFGQ-7

Diodes Incorporated

MOSFET BVDSS: 61V~100V POWERDI33

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 100 V
• Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 46A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 2361 pF @ 50 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 2.5W (Ta), 39W (Tc)
• Rds On (Max) @ Id, Vgs: 8.5mOhm @ 20A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: POWERDI3333-8
• Package / Case: 8-PowerVDFN

Paket: -

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SIHD6N65ET1-GE3

Vishay Siliconix

MOSFET N-CH 650V 7A TO252AA

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 650 V
• Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 820 pF @ 100 V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 78W (Tc)
• Rds On (Max) @ Id, Vgs: 600mOhm @ 3A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: TO-252AA
• Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63

Paket: -

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SIR164DP-T1-RE3

Vishay Siliconix

MOSFET N-CH 30V 50A PPAK SO-8

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30 V
• Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 123 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 3950 pF @ 15 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 69W (Tc)
• Rds On (Max) @ Id, Vgs: 2.5mOhm @ 15A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PowerPAK® SO-8
• Package / Case: PowerPAK® SO-8

Paket: -

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SCH1419-TL-E

onsemi

NCH 2.5V DRIVE SERIES

• FET Type: -
• Technology: -
• Drain to Source Voltage (Vdss): -
• Current - Continuous Drain (Id) @ 25°C: -
• Drive Voltage (Max Rds On, Min Rds On): -
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: -
• Vgs (Max): -
• FET Feature: -
• Power Dissipation (Max): -
• Rds On (Max) @ Id, Vgs: -
• Operating Temperature: -
• Mounting Type: -
• Supplier Device Package: -
• Package / Case: -

Paket: -

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SI2301Q-TPAU

Micro Commercial Co

MOSFET

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 20 V
• Current - Continuous Drain (Id) @ 25°C: 2.8A
• Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
• Vgs(th) (Max) @ Id: 1V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 14.5 nC @ 4.5 V
• Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 6 V
• Vgs (Max): ±8V
• FET Feature: -
• Power Dissipation (Max): 1.25W
• Rds On (Max) @ Id, Vgs: 120mOhm @ 2.8A, 4.5V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: SOT-23
• Package / Case: TO-236-3, SC-59, SOT-23-3

Paket: -

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SIHP6N65E-GE3

Vishay Siliconix

MOSFET N-CH 650V 7A TO220AB

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 650 V
• Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 820 pF @ 100 V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 78W (Tc)
• Rds On (Max) @ Id, Vgs: 600mOhm @ 3A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220AB
• Package / Case: TO-220-3

Paket: -

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BUK9M11-40HX

Nexperia USA Inc.

MOSFET N-CH 40V 35A LFPAK33

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 40 V
• Current - Continuous Drain (Id) @ 25°C: 35A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.2V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 1345 pF @ 25 V
• Vgs (Max): +16V, -10V
• FET Feature: -
• Power Dissipation (Max): 50W (Ta)
• Rds On (Max) @ Id, Vgs: 11mOhm @ 10A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: LFPAK33
• Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)

Paket: -