Bild |
Teilenummer |
Hersteller |
Beschreibung |
Paket |
Lager |
Anzahl |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
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Microsemi Corporation |
MOSFET P-CH 100V 18A
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Paket: TO-267AB |
Lager3.472 |
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MOSFET (Metal Oxide) | 100V | 18A (Tc) | 10V | 4V @ 250µA | 60nC @ 10V | - | ±20V | - | 4W (Ta), 125W (Tc) | 220 mOhm @ 18A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-267AB | TO-267AB |
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Diodes Incorporated |
MOSFET N-CH 20V 4A DFN-2X2
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Paket: 3-VDFN Exposed Pad |
Lager1.085.232 |
|
MOSFET (Metal Oxide) | 20V | 4A (Ta) | 2.5V, 4.5V | 1.5V @ 250µA | 2.8nC @ 4.5V | 277pF @ 10V | ±12V | - | 1.35W (Ta) | 60 mOhm @ 2.5A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | 3-DFN (2x2) | 3-VDFN Exposed Pad |
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Fairchild/ON Semiconductor |
MOSFET N-CH 900V 5.8A TO-3P
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Paket: TO-3P-3, SC-65-3 |
Lager107.352 |
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MOSFET (Metal Oxide) | 900V | 5.8A (Tc) | 10V | 5V @ 250µA | 40nC @ 10V | 1550pF @ 25V | ±30V | - | 185W (Tc) | 2.3 Ohm @ 2.9A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-3P | TO-3P-3, SC-65-3 |
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Vishay Siliconix |
MOSFET N-CH 60V 14A I-PAK
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Paket: TO-251-3 Short Leads, IPak, TO-251AA |
Lager2.768 |
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MOSFET (Metal Oxide) | 60V | 14A (Tc) | 10V | 4V @ 250µA | 25nC @ 10V | 640pF @ 25V | ±20V | - | 2.5W (Ta), 42W (Tc) | 100 mOhm @ 8.4A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-251AA | TO-251-3 Short Leads, IPak, TO-251AA |
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Vishay Siliconix |
MOSFET N-CH 60V 50A TO-262
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Paket: TO-262-3 Long Leads, I2Pak, TO-262AA |
Lager6.064 |
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MOSFET (Metal Oxide) | 60V | 50A (Tc) | 10V | 4V @ 250µA | 110nC @ 10V | 2400pF @ 25V | ±20V | - | 3.7W (Ta), 190W (Tc) | 18 mOhm @ 43A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 | TO-262-3 Long Leads, I2Pak, TO-262AA |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 60A DPAK-3
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Paket: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Lager7.392 |
|
MOSFET (Metal Oxide) | 30V | 60A (Ta) | 4.5V, 10V | 2.3V @ 500µA | 40nC @ 10V | 2700pF @ 10V | ±20V | - | 63W (Tc) | 6.4 mOhm @ 30A, 10V | 150°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 400V 4.2A TO251A
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Paket: TO-251-3 Stub Leads, IPak |
Lager3.280 |
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MOSFET (Metal Oxide) | 400V | 4.2A (Tc) | 10V | 4.5V @ 250µA | 8.5nC @ 10V | 400pF @ 25V | ±30V | - | 78W (Tc) | 1.6 Ohm @ 1A, 10V | -50°C ~ 150°C (TJ) | Through Hole | TO-251A | TO-251-3 Stub Leads, IPak |
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IXYS |
MOSFET P-CH 600V 16A TO-268
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Paket: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA |
Lager5.488 |
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MOSFET (Metal Oxide) | 600V | 16A (Tc) | 10V | 4.5V @ 250µA | 92nC @ 10V | 5120pF @ 25V | ±20V | - | 460W (Tc) | 720 mOhm @ 500mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-268 | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA |
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ON Semiconductor |
MOSFET P-CH 60V 12A TP-FA
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Paket: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Lager5.712 |
|
MOSFET (Metal Oxide) | 60V | 12A (Ta) | 4V, 10V | - | 26nC @ 10V | 1150pF @ 20V | ±20V | - | 1W (Ta), 15W (Tc) | 62 mOhm @ 6A, 10V | 150°C (TJ) | Surface Mount | TP-FA | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 80V 140A TO263-3
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Paket: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Lager5.120 |
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MOSFET (Metal Oxide) | 80V | 120A (Tc) | 6V, 10V | 3.8V @ 208µA | 166nC @ 10V | 12100pF @ 40V | ±20V | - | 300W (Tc) | 2 mOhm @ 100A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 80V TO263-3
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Paket: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Lager22.152 |
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MOSFET (Metal Oxide) | 80V | 120A (Tc) | 6V, 10V | 3.8V @ 108µA | 87nC @ 10V | 6240pF @ 40V | ±20V | - | 167W (Tc) | 3.1 mOhm @ 100A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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ON Semiconductor |
MOSFET N-CH 1500V 2A DPAK
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Paket: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Lager6.832 |
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MOSFET (Metal Oxide) | 1500V | 2A (Ta) | 10V | - | 37.5nC @ 10V | 380pF @ 30V | ±20V | - | 80W (Tc) | 13 Ohm @ 1A, 10V | 150°C (TJ) | Surface Mount | TO-263-2 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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STMicroelectronics |
MOSFET N-CH 1050V 1.5A IPAK
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Paket: TO-251-3 Short Leads, IPak, TO-251AA |
Lager27.618 |
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MOSFET (Metal Oxide) | 1050V | 1.5A (Tc) | 10V | 5V @ 100µA | 10nC @ 10V | 115pF @ 100V | ±30V | - | 60W (Tc) | 8 Ohm @ 750mA, 10V | -55°C ~ 150°C (TJ) | Through Hole | IPAK (TO-251) | TO-251-3 Short Leads, IPak, TO-251AA |
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Infineon Technologies |
MOSFET N-CH 30V 3.2A 6-TSOP
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Paket: SOT-23-6 |
Lager5.085.492 |
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MOSFET (Metal Oxide) | 30V | 3.2A (Ta) | 4.5V, 10V | 1V @ 250µA | 9.6nC @ 10V | 210pF @ 25V | ±20V | - | 1.7W (Ta) | 100 mOhm @ 2.2A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | Micro6?(TSOP-6) | SOT-23-6 |
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Fairchild/ON Semiconductor |
MOSFET N-CH 60V 21A TO-220
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Paket: TO-220-3 |
Lager223.848 |
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MOSFET (Metal Oxide) | 60V | 21A (Tc) | 5V, 10V | 2.5V @ 250µA | 13nC @ 5V | 630pF @ 25V | ±20V | - | 53W (Tc) | 55 mOhm @ 10.5A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Fairchild/ON Semiconductor |
MOSFET N-CH 100V 33A D2PAK
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Paket: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Lager14.544 |
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MOSFET (Metal Oxide) | 100V | 33A (Tc) | 5V, 10V | 2V @ 250µA | 40nC @ 5V | 1630pF @ 25V | ±20V | - | 3.75W (Ta), 127W (Tc) | 52 mOhm @ 16.5A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK (TO-263AB) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
P-CHANNEL 80 V (D-S) MOSFET D2PA
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Paket: - |
Lager2.394 |
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MOSFET (Metal Oxide) | 80 V | 150A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 218 nC @ 10 V | 9600 pF @ 40 V | ±20V | - | 375W (Tc) | 6.1mOhm @ 20A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | TO-263 (D2PAK) | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
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Diodes Incorporated |
MOSFET P-CH 20V 3.7A TSOT26
|
Paket: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 20 V | 3.7A (Ta) | 2.5V, 4.5V | 1V @ 250µA | 6 nC @ 4.5 V | 443 pF @ 10 V | ±10V | - | 1.2W (Ta) | 80mOhm @ 2.8A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | TSOT-26 | SOT-23-6 Thin, TSOT-23-6 |
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onsemi |
N-CHANNEL POWER MOSFET
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Paket: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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IXYS |
MOSFET N-CH 150V 100A TO220
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Paket: - |
Lager150 |
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MOSFET (Metal Oxide) | 150 V | 100A (Tc) | 10V | 4.5V @ 250µA | 74 nC @ 10 V | 3970 pF @ 25 V | ±20V | - | 375W (Tc) | 11.5mOhm @ 50A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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Panasonic Electronic Components |
MOSFET N-CH 12V 3.9A ULGA004
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Paket: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 12 V | 3.9A (Ta) | 1.5V, 4.5V | 1V @ 394µA | 7 nC @ 4.5 V | 490 pF @ 10 V | ±8V | - | 370mW (Ta) | 24mOhm @ 1.5A, 4.5V | -40°C ~ 85°C (TA) | Surface Mount | ULGA004-W-1010-RA01 | 4-XFLGA, CSP |
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Toshiba Semiconductor and Storage |
SMOS P-CH VDSS=-20V, VGSS=+6/-8V
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Paket: - |
Lager7.251 |
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MOSFET (Metal Oxide) | 20 V | 4A (Ta) | 1.5V, 4.5V | 1V @ 1mA | 12.8 nC @ 4.5 V | 840 pF @ 10 V | +6V, -8V | - | 1W (Ta) | 42.7mOhm @ 3A, 4.5V | 150°C | Surface Mount | UF6 | 6-SMD, Flat Leads |
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onsemi |
P-CHANNEL MOSFET
|
Paket: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Renesas Electronics Corporation |
N-CHANNEL POWER MOSFET
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Paket: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Nexperia USA Inc. |
BXK9Q29-60A/SOT8002/MLPAK33
|
Paket: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 60 V | 21A (Ta) | 4.5V, 10V | 2.1V @ 1mA | 18 nC @ 10 V | 660 pF @ 30 V | ±20V | - | 27W (Ta) | 29mOhm @ 5.6A, 10V | -55°C ~ 175°C (TJ) | Surface Mount, Wettable Flank | MLPAK33 | 8-PowerVDFN |
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Micro Commercial Co |
N-CHANNEL MOSFET,DFN5060
|
Paket: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 60 V | 65A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 34.5 nC @ 10 V | 1740 pF @ 30 V | ±20V | - | 100W (Tj) | 5.2mOhm @ 20A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | DFN5060 | 8-PowerTDFN |
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Microchip Technology |
MOSFET N-CH 800V 13A TO247
|
Paket: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 800 V | - | - | - | - | - | - | - | - | - | - | - | - | - |
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GeneSiC Semiconductor |
750V 60M TO-263-7 G3R SIC MOSFET
|
Paket: - |
Lager3.918 |
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SiCFET (Silicon Carbide) | 750 V | - | - | - | - | - | +20V, -10V | - | - | - | - | Surface Mount | TO-263-7 | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA |