Bild |
Teilenummer |
Hersteller |
Beschreibung |
Paket |
Lager |
Anzahl |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
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Infineon Technologies |
MOSFET N-CH 25V 80A D2PAK
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Paket: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Lager4.240 |
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MOSFET (Metal Oxide) | 25V | 80A (Tc) | 4.5V, 10V | 2V @ 50µA | 25nC @ 5V | 3110pF @ 15V | ±20V | - | 94W (Tc) | 4.6 mOhm @ 55A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 30V 38A TO-220AB
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Paket: TO-220-3 |
Lager5.216 |
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MOSFET (Metal Oxide) | 30V | 38A (Tc) | 4.5V, 10V | 1V @ 250µA | 26nC @ 4.5V | 870pF @ 25V | ±16V | - | 68W (Tc) | 26 mOhm @ 20A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 30V 62A TO-262
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Paket: TO-262-3 Long Leads, I2Pak, TO-262AA |
Lager67.800 |
|
MOSFET (Metal Oxide) | 30V | 62A (Tc) | 4.5V, 10V | 3V @ 250µA | 19nC @ 4.5V | 1990pF @ 15V | ±20V | - | 87W (Tc) | 12.5 mOhm @ 15A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-262 | TO-262-3 Long Leads, I2Pak, TO-262AA |
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IXYS |
MOSFET N-CH 900V 18A PLUS220
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Paket: TO-220-3, Short Tab |
Lager3.952 |
|
MOSFET (Metal Oxide) | 900V | 18A (Tc) | 10V | 6.5V @ 1mA | 97nC @ 10V | 5230pF @ 25V | ±30V | - | 540W (Tc) | 600 mOhm @ 500mA, 10V | -55°C ~ 150°C (TJ) | Through Hole | PLUS220 | TO-220-3, Short Tab |
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Fairchild/ON Semiconductor |
MOSFET N-CH 75V 75A TO-220
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Paket: TO-220-3 |
Lager196.284 |
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MOSFET (Metal Oxide) | 75V | 75A (Tc) | 10V | 4V @ 250µA | 104nC @ 10V | 4468pF @ 25V | ±20V | - | 131W (Tc) | 11 mOhm @ 37.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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Microsemi Corporation |
MOSFET N-CH 200V 175A SOT-227
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Paket: SOT-227-4, miniBLOC |
Lager3.104 |
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MOSFET (Metal Oxide) | 200V | 175A | 10V | 4V @ 5mA | 180nC @ 10V | 21600pF @ 25V | ±30V | - | 700W (Tc) | 11 mOhm @ 500mA, 10V | -55°C ~ 150°C (TJ) | Chassis Mount | ISOTOP? | SOT-227-4, miniBLOC |
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Microsemi Corporation |
MOSFET N-CH 500V 84A TO-247
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Paket: TO-247-3 Variant |
Lager3.200 |
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MOSFET (Metal Oxide) | 500V | 84A (Tc) | 10V | 5V @ 2.5mA | 340nC @ 10V | 13500pF @ 25V | ±30V | - | 1135W (Tc) | 65 mOhm @ 42A, 10V | -55°C ~ 150°C (TJ) | Through Hole | T-MAX? [B2] | TO-247-3 Variant |
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Diodes Incorporated |
MOSFET NCH 60V 100A TO220AB
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Paket: TO-220-3 |
Lager5.808 |
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MOSFET (Metal Oxide) | 60V | 100A (Tc) | 4.5V, 10V | 3V @ 250µA | 47.1nC @ 10V | 2962pF @ 30V | ±20V | - | 2.8W (Ta), 125W (Tc) | 6 mOhm @ 20A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET P-CH 250V 2.7A I-PAK
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Paket: TO-251-3 Short Leads, IPak, TO-251AA |
Lager4.688 |
|
MOSFET (Metal Oxide) | 250V | 2.7A (Tc) | 10V | 4V @ 250µA | 14nC @ 10V | 220pF @ 25V | ±20V | - | 50W (Tc) | 3 Ohm @ 1.7A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-251AA | TO-251-3 Short Leads, IPak, TO-251AA |
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Vishay Siliconix |
MOSFET N-CH 600V 2.5A TO220FP
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Paket: TO-220-3 Full Pack, Isolated Tab |
Lager42.000 |
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MOSFET (Metal Oxide) | 600V | 2.5A (Tc) | 10V | 4V @ 250µA | 31nC @ 10V | 660pF @ 25V | ±20V | - | 35W (Tc) | 2.2 Ohm @ 1.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 Full Pack, Isolated Tab |
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Nexperia USA Inc. |
MOSFET N-CH 55V 75A TO220AB
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Paket: TO-220-5 |
Lager21.828 |
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MOSFET (Metal Oxide) | 55V | 75A (Tc) | 10V | 4V @ 1mA | 116nC @ 10V | 4500pF @ 25V | ±20V | Temperature Sensing Diode | 272W (Tc) | 7 mOhm @ 50A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220-5 | TO-220-5 |
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Infineon Technologies |
MOSFET N-CH 40V 375A
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Paket: DirectFET? Isometric L8 |
Lager3.408 |
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MOSFET (Metal Oxide) | 40V | 375A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 330nC @ 4.5V | 20082pF @ 25V | ±20V | - | 3.8W (Ta), 341W (Tc) | 0.59 mOhm @ 195A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | DIRECTFET L8 | DirectFET? Isometric L8 |
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Infineon Technologies |
MOSFET N-CH 150V 5.1A 8-SOIC
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Paket: 8-SOIC (0.154", 3.90mm Width) |
Lager134.748 |
|
MOSFET (Metal Oxide) | 150V | 5.1A (Ta) | 10V | 5V @ 100µA | 38nC @ 10V | 1647pF @ 75V | ±20V | - | 2.5W (Ta) | 43 mOhm @ 3.1A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET N-CH 600V TO247-3
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Paket: TO-247-3 |
Lager7.856 |
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MOSFET (Metal Oxide) | 600V | 30A (Tc) | 10V | 4.5V @ 960µA | 56nC @ 10V | 2660pF @ 100V | ±20V | - | 219W (Tc) | 125 mOhm @ 11.6A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-3 | TO-247-3 |
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Infineon Technologies |
MOSFET N-CH 600V TO220-3
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Paket: TO-220-3 |
Lager12.060 |
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MOSFET (Metal Oxide) | 600V | 30A (Tc) | 10V | 4.5V @ 960µA | 56nC @ 10V | 2660pF @ 100V | ±20V | - | 219W (Tc) | 125 mOhm @ 11.6A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO-220-3 | TO-220-3 |
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Diodes Incorporated |
MOSFET P-CH 20V 3A SOT23
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Paket: TO-236-3, SC-59, SOT-23-3 |
Lager36.000 |
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MOSFET (Metal Oxide) | 20V | 3A (Ta) | 1.8V, 4.5V | 1.3V @ 250µA | 9nC @ 4.5V | 857pF @ 10V | ±8V | - | 700mW (Ta) | 95 mOhm @ 3A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23 | TO-236-3, SC-59, SOT-23-3 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 650V 35A TO220SIS
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Paket: TO-220-3 Full Pack, Isolated Tab |
Lager7.896 |
|
MOSFET (Metal Oxide) | 650V | 35A (Ta) | 10V | 4.5V @ 2.1mA | 115nC @ 10V | 4100pF @ 300V | ±30V | - | 50W (Tc) | 95 mOhm @ 17.5A, 10V | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack, Isolated Tab |
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Diodes Incorporated |
MOSFET P-CH 40V 6.6A DPAK
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Paket: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Lager194.040 |
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MOSFET (Metal Oxide) | 40V | 6.6A (Ta) | 4.5V, 10V | 1V @ 250µA | 29.6nC @ 10V | 965pF @ 20V | ±20V | - | 2.15W (Ta) | 60 mOhm @ 3.8A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Renesas Electronics Corporation |
N-CHANNEL POWER MOSFET
|
Paket: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 100 V | 20A (Ta) | 4V, 10V | 2.5V @ 1mA | 50 nC @ 10 V | 2200 pF @ 10 V | ±20V | - | 2W (Ta), 35W (Tc) | 80mOhm @ 10A, 10V | 150°C | Through Hole | MP-45F | TO-220-3 Isolated Tab |
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Diodes Incorporated |
MOSFET N-CH 20V 18A PWRDI3333
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Paket: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 20 V | 18A (Ta), 50A (Tc) | 2.5V, 4.5V | 1.2V @ 250µA | 164 nC @ 10 V | 6495 pF @ 10 V | ±12V | - | 1.05W (Ta) | 4.6mOhm @ 13.5A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | POWERDI3333-8 | 8-PowerVDFN |
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Sanyo |
N-CHANNEL SILICON MOSFET
|
Paket: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 30 V | 6A (Ta) | - | - | 7 nC @ 4 V | 790 pF @ 10 V | - | - | 1.6W (Ta) | 41mOhm @ 3A, 4V | 150°C (TJ) | Surface Mount | 6-CPH | SOT-23-6 Thin, TSOT-23-6 |
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Fairchild Semiconductor |
N-CHANNEL POWER MOSFET
|
Paket: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 55 V | 66A (Tc) | 10V | 4V @ 250µA | 85 nC @ 20 V | 1300 pF @ 25 V | ±20V | - | 150W (Tc) | 16mOhm @ 66A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-247 | TO-247-3 |
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IXYS |
MOSFET N-CH 100V 170A TO268
|
Paket: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 100 V | 170A (Tc) | 10V, 15V | 5V @ 250µA | 198 nC @ 10 V | 6000 pF @ 25 V | ±20V | - | 715W (Tc) | 9mOhm @ 85A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | TO-268 | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA |
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STMicroelectronics |
DISCRETE
|
Paket: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 1200 V | 36A (Tc) | 18V | 4.9V @ 1mA | 61 nC @ 18 V | 1233 pF @ 800 V | +18V, -5V | - | 277W (Tc) | 100mOhm @ 20A, 18V | -55°C ~ 200°C (TJ) | Through Hole | TO-247-4 | TO-247-4 |
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Fairchild Semiconductor |
N-CHANNEL POWER MOSFET
|
Paket: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 600 V | 2A (Tc) | 10V | 4V @ 250µA | 21 nC @ 10 V | 410 pF @ 25 V | ±30V | - | 54W (Tc) | 5Ohm @ 1A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 80V 21.3A/86A PPAK
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Paket: - |
Lager4.383 |
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MOSFET (Metal Oxide) | 80 V | 21.3A (Ta), 86A (Tc) | 10V | 2.4V @ 250µA | 91 nC @ 10 V | 3840 pF @ 40 V | ±20V | - | 5W (Ta), 83W (Tc) | 5mOhm @ 15A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
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onsemi |
MOSFET N-CH 20V 5.2A CHIPFET
|
Paket: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 20 V | 5.2A (Ta) | 2.5V, 4.5V | - | 18 nC @ 4.5 V | - | ±12V | - | - | - | -55°C ~ 150°C (TJ) | Surface Mount | ChipFET™ | 8-SMD, Flat Lead |
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Panjit International Inc. |
30V P-CHANNEL ENHANCEMENT MODE M
|
Paket: - |
Lager7.575 |
|
MOSFET (Metal Oxide) | 30 V | 8.4A (Ta) | 4.5V, 10V | 2.5V @ 250µA | 11 nC @ 4.5 V | 1169 pF @ 15 V | ±20V | - | 2W (Ta) | 20mOhm @ 8.4A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | DFN2020B-6 | 6-WDFN Exposed Pad |
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onsemi |
MOSFET N-CH 20V 9A MICROFET
|
Paket: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 20 V | 9A (Ta) | 1.8V, 4.5V | 1V @ 250µA | 8.5 nC @ 4.5 V | 865 pF @ 10 V | ±12V | - | 700mW | 18mOhm @ 9A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | MicroFet 1.6x1.6 Thin | 6-PowerUFDFN |
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MOSLEADER |
N 30V 1.49A SOT-23N
|
Paket: - |
Request a Quote |
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