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Transistoren - FETs, MOSFET - Einzeln

Aufzeichnungen 42.029
Page  508/1.401
Bild
Teilenummer
Hersteller
Beschreibung
Paket
Lager
Anzahl
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
FET Feature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
IRFU3711PBF
Infineon Technologies

MOSFET N-CH 20V 100A I-PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 44nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 2980pF @ 10V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta), 120W (Tc)
  • Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 15A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: IPAK (TO-251)
  • Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Paket: TO-251-3 Short Leads, IPak, TO-251AA
Lager2.912
MOSFET (Metal Oxide)
20V
100A (Tc)
4.5V, 10V
3V @ 250µA
44nC @ 4.5V
2980pF @ 10V
±20V
-
2.5W (Ta), 120W (Tc)
6.5 mOhm @ 15A, 10V
-55°C ~ 150°C (TJ)
Through Hole
IPAK (TO-251)
TO-251-3 Short Leads, IPak, TO-251AA
hot IRLI2505
Infineon Technologies

MOSFET N-CH 55V 58A TO220FP

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 55V
  • Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 130nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 5000pF @ 25V
  • Vgs (Max): ±16V
  • FET Feature: -
  • Power Dissipation (Max): 63W (Tc)
  • Rds On (Max) @ Id, Vgs: 8 mOhm @ 31A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB Full-Pak
  • Package / Case: TO-220-3 Full Pack
Paket: TO-220-3 Full Pack
Lager87.912
MOSFET (Metal Oxide)
55V
58A (Tc)
4V, 10V
2V @ 250µA
130nC @ 5V
5000pF @ 25V
±16V
-
63W (Tc)
8 mOhm @ 31A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-220AB Full-Pak
TO-220-3 Full Pack
AOB20C60
Alpha & Omega Semiconductor Inc.

MOSFET N-CH TO-263

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 74nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3440pF @ 100V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 463W (Tc)
  • Rds On (Max) @ Id, Vgs: 250 mOhm @ 10A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-263 (D2Pak)
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Paket: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Lager6.624
MOSFET (Metal Oxide)
600V
20A (Tc)
10V
5V @ 250µA
74nC @ 10V
3440pF @ 100V
±30V
-
463W (Tc)
250 mOhm @ 10A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
TO-263 (D2Pak)
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
SI7664DP-T1-GE3
Vishay Siliconix

MOSFET N-CH 30V 40A PPAK SO-8

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 1.8V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 125nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 7770pF @ 15V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 5.4W (Ta), 83W (Tc)
  • Rds On (Max) @ Id, Vgs: 3.1 mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK? SO-8
  • Package / Case: PowerPAK? SO-8
Paket: PowerPAK? SO-8
Lager3.280
MOSFET (Metal Oxide)
30V
40A (Tc)
4.5V, 10V
1.8V @ 250µA
125nC @ 10V
7770pF @ 15V
±12V
-
5.4W (Ta), 83W (Tc)
3.1 mOhm @ 20A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK? SO-8
PowerPAK? SO-8
hot NTMFS4120NT1G
ON Semiconductor

MOSFET N-CH 30V 11A SO8FL

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 50nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 3600pF @ 24V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 900mW (Ta)
  • Rds On (Max) @ Id, Vgs: 4.5 mOhm @ 26A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 5-DFN (5x6) (8-SOFL)
  • Package / Case: 8-PowerTDFN, 5 Leads
Paket: 8-PowerTDFN, 5 Leads
Lager175.872
MOSFET (Metal Oxide)
30V
11A (Ta)
4.5V, 10V
2.5V @ 250µA
50nC @ 4.5V
3600pF @ 24V
±20V
-
900mW (Ta)
4.5 mOhm @ 26A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
5-DFN (5x6) (8-SOFL)
8-PowerTDFN, 5 Leads
BUK754R3-40B,127
NXP

MOSFET N-CH 40V 75A TO220AB

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 69nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 4824pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 254W (Tc)
  • Rds On (Max) @ Id, Vgs: 4.3 mOhm @ 25A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
Paket: TO-220-3
Lager3.104
MOSFET (Metal Oxide)
40V
75A (Tc)
10V
4V @ 1mA
69nC @ 10V
4824pF @ 25V
±20V
-
254W (Tc)
4.3 mOhm @ 25A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-220AB
TO-220-3
FQD3N30TF
Fairchild/ON Semiconductor

MOSFET N-CH 300V 2.4A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 300V
  • Current - Continuous Drain (Id) @ 25°C: 2.4A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 230pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta), 30W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.2 Ohm @ 1.2A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D-Pak
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Paket: TO-252-3, DPak (2 Leads + Tab), SC-63
Lager7.440
MOSFET (Metal Oxide)
300V
2.4A (Tc)
10V
5V @ 250µA
7nC @ 10V
230pF @ 25V
±30V
-
2.5W (Ta), 30W (Tc)
2.2 Ohm @ 1.2A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
D-Pak
TO-252-3, DPak (2 Leads + Tab), SC-63
hot ZVN0124ASTOA
Diodes Incorporated

MOSFET N-CH 240V 0.16A TO92-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 240V
  • Current - Continuous Drain (Id) @ 25°C: 160mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 85pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 700mW (Ta)
  • Rds On (Max) @ Id, Vgs: 16 Ohm @ 250mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: E-Line (TO-92 compatible)
  • Package / Case: E-Line-3
Paket: E-Line-3
Lager22.404
MOSFET (Metal Oxide)
240V
160mA (Ta)
10V
3V @ 1mA
-
85pF @ 25V
±20V
-
700mW (Ta)
16 Ohm @ 250mA, 10V
-55°C ~ 150°C (TJ)
Through Hole
E-Line (TO-92 compatible)
E-Line-3
NTD15N06T4
ON Semiconductor

MOSFET N-CH 60V 15A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 450pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.5W (Ta), 48W (Tj)
  • Rds On (Max) @ Id, Vgs: 90 mOhm @ 7.5A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DPAK-3
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Paket: TO-252-3, DPak (2 Leads + Tab), SC-63
Lager3.168
MOSFET (Metal Oxide)
60V
15A (Ta)
10V
4V @ 250µA
20nC @ 10V
450pF @ 25V
±20V
-
1.5W (Ta), 48W (Tj)
90 mOhm @ 7.5A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
DPAK-3
TO-252-3, DPak (2 Leads + Tab), SC-63
hot SPB16N50C3
Infineon Technologies

MOSFET N-CH 560V 16A TO-263

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 560V
  • Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.9V @ 675µA
  • Gate Charge (Qg) (Max) @ Vgs: 66nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 160W (Tc)
  • Rds On (Max) @ Id, Vgs: 280 mOhm @ 10A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO263-3-2
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Paket: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Lager390.000
MOSFET (Metal Oxide)
560V
16A (Tc)
10V
3.9V @ 675µA
66nC @ 10V
1600pF @ 25V
±20V
-
160W (Tc)
280 mOhm @ 10A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PG-TO263-3-2
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
hot IXFH18N60P
IXYS

MOSFET N-CH 600V 18A TO-247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5.5V @ 2.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2500pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 360W (Tc)
  • Rds On (Max) @ Id, Vgs: 400 mOhm @ 500mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247AD (IXFH)
  • Package / Case: TO-247-3
Paket: TO-247-3
Lager103.464
MOSFET (Metal Oxide)
600V
18A (Tc)
10V
5.5V @ 2.5mA
50nC @ 10V
2500pF @ 25V
±30V
-
360W (Tc)
400 mOhm @ 500mA, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-247AD (IXFH)
TO-247-3
NTMFS4C028NT3G
ON Semiconductor

MOSFET N-CH 30V SO8FL

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 16.4A (Ta), 52A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 22.2nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1252pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.51W (Ta), 25.5W (Tc)
  • Rds On (Max) @ Id, Vgs: 4.73 mOhm @ 30A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 5-DFN (5x6) (8-SOFL)
  • Package / Case: 8-PowerTDFN, 5 Leads
Paket: 8-PowerTDFN, 5 Leads
Lager2.160
MOSFET (Metal Oxide)
30V
16.4A (Ta), 52A (Tc)
4.5V, 10V
2.1V @ 250µA
22.2nC @ 10V
1252pF @ 15V
±20V
-
2.51W (Ta), 25.5W (Tc)
4.73 mOhm @ 30A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
5-DFN (5x6) (8-SOFL)
8-PowerTDFN, 5 Leads
SIA477EDJ-T1-GE3
Vishay Siliconix

MOSFET P-CH 12V 12A SC-70-6L

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 12V
  • Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 87nC @ 8V
  • Input Capacitance (Ciss) (Max) @ Vds: 2970pF @ 6V
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 14 mOhm @ 7A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK? SC-70-6 Single
  • Package / Case: PowerPAK? SC-70-6
Paket: PowerPAK? SC-70-6
Lager5.184
MOSFET (Metal Oxide)
12V
12A (Tc)
-
1V @ 250µA
87nC @ 8V
2970pF @ 6V
-
-
-
14 mOhm @ 7A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK? SC-70-6 Single
PowerPAK? SC-70-6
IPD50N03S2L06ATMA1
Infineon Technologies

MOSFET N-CH 30V 50A TO252-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 85µA
  • Gate Charge (Qg) (Max) @ Vgs: 68nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 136W (Tc)
  • Rds On (Max) @ Id, Vgs: 6.4 mOhm @ 50A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO252-3-11
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Paket: TO-252-3, DPak (2 Leads + Tab), SC-63
Lager6.944
MOSFET (Metal Oxide)
30V
50A (Tc)
4.5V, 10V
2V @ 85µA
68nC @ 10V
1900pF @ 25V
±20V
-
136W (Tc)
6.4 mOhm @ 50A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
PG-TO252-3-11
TO-252-3, DPak (2 Leads + Tab), SC-63
SCT2750NYTB
Rohm Semiconductor

1700V .75 OHM 6A SIC FET

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 1700V
  • Current - Continuous Drain (Id) @ 25°C: 5.9A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 18V
  • Vgs(th) (Max) @ Id: 4V @ 630µA
  • Gate Charge (Qg) (Max) @ Vgs: 17nC @ 18V
  • Input Capacitance (Ciss) (Max) @ Vds: 275pF @ 800V
  • Vgs (Max): +22V, -6V
  • FET Feature: -
  • Power Dissipation (Max): 57W (Tc)
  • Rds On (Max) @ Id, Vgs: 975 mOhm @ 1.7A, 18V
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-268
  • Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Paket: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Lager2.624
MOSFET (Metal Oxide)
1700V
5.9A (Tc)
18V
4V @ 630µA
17nC @ 18V
275pF @ 800V
+22V, -6V
-
57W (Tc)
975 mOhm @ 1.7A, 18V
175°C (TJ)
Surface Mount
TO-268
TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
SIHP33N60EF-GE3
Vishay Siliconix

MOSFET N-CH 600V 33A TO-220-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 155nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3454pF @ 100V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 278W (Tc)
  • Rds On (Max) @ Id, Vgs: 98 mOhm @ 16.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
Paket: TO-220-3
Lager15.120
MOSFET (Metal Oxide)
600V
33A (Tc)
10V
4V @ 250µA
155nC @ 10V
3454pF @ 100V
±30V
-
278W (Tc)
98 mOhm @ 16.5A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220AB
TO-220-3
FF1700XTR17IE5DBPSA1
Infineon Technologies

PP IHM I

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
Paket: -
Lager6
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
AON6224A
Alpha & Omega Semiconductor Inc.

N

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 34A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2305 pF @ 50 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 16W (Ta), 56.5W (Tc)
  • Rds On (Max) @ Id, Vgs: 11.6mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-DFN (5x6)
  • Package / Case: 8-PowerSMD, Flat Leads
Paket: -
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MOSFET (Metal Oxide)
100 V
16A (Ta), 34A (Tc)
4.5V, 10V
2.5V @ 250µA
50 nC @ 10 V
2305 pF @ 50 V
±20V
-
16W (Ta), 56.5W (Tc)
11.6mOhm @ 20A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
8-DFN (5x6)
8-PowerSMD, Flat Leads
IPN80R3K3P7ATMA1
Infineon Technologies

MOSFET N-CH 800V 1.9A SOT223

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 800 V
  • Current - Continuous Drain (Id) @ 25°C: 1.9A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 30µA
  • Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 120 pF @ 500 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 6.1W (Tc)
  • Rds On (Max) @ Id, Vgs: 3.3Ohm @ 590mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-SOT223
  • Package / Case: TO-261-4, TO-261AA
Paket: -
Lager40.086
MOSFET (Metal Oxide)
800 V
1.9A (Tc)
10V
3.5V @ 30µA
5.8 nC @ 10 V
120 pF @ 500 V
±20V
-
6.1W (Tc)
3.3Ohm @ 590mA, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PG-SOT223
TO-261-4, TO-261AA
APT50M50JVR
Microchip Technology

MOSFET N-CH 500V 77A ISOTOP

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500 V
  • Current - Continuous Drain (Id) @ 25°C: 77A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 4V @ 5mA
  • Gate Charge (Qg) (Max) @ Vgs: 1000 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 19600 pF @ 25 V
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 50mOhm @ 500mA, 10V
  • Operating Temperature: -
  • Mounting Type: Chassis Mount
  • Supplier Device Package: ISOTOP®
  • Package / Case: SOT-227-4, miniBLOC
Paket: -
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MOSFET (Metal Oxide)
500 V
77A (Tc)
-
4V @ 5mA
1000 nC @ 10 V
19600 pF @ 25 V
-
-
-
50mOhm @ 500mA, 10V
-
Chassis Mount
ISOTOP®
SOT-227-4, miniBLOC
NDS0610-PG
onsemi

MOSFET P-CH 60V SOT-23

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 120mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 2.5 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 79 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 360mW (Ta)
  • Rds On (Max) @ Id, Vgs: 10Ohm @ 500mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23-3 (TO-236)
  • Package / Case: TO-236-3, SC-59, SOT-23-3
Paket: -
Request a Quote
MOSFET (Metal Oxide)
60 V
120mA (Ta)
4.5V, 10V
3.5V @ 1mA
2.5 nC @ 10 V
79 pF @ 25 V
±20V
-
360mW (Ta)
10Ohm @ 500mA, 10V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3 (TO-236)
TO-236-3, SC-59, SOT-23-3
IRFB4115PBFXKMA1
Infineon Technologies

TRENCH >=100V

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 150 V
  • Current - Continuous Drain (Id) @ 25°C: 104A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 5270 pF @ 50 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 380W (Tc)
  • Rds On (Max) @ Id, Vgs: 11mOhm @ 62A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
Paket: -
Request a Quote
MOSFET (Metal Oxide)
150 V
104A (Tc)
10V
5V @ 250µA
120 nC @ 10 V
5270 pF @ 50 V
±20V
-
380W (Tc)
11mOhm @ 62A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-220AB
TO-220-3
IXTA3N100P-TRL
IXYS

MOSFET N-CH 1000V 3A TO263

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 1000 V
  • Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 125W (Tc)
  • Rds On (Max) @ Id, Vgs: 4.8Ohm @ 1.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-263 (D2PAK)
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Paket: -
Request a Quote
MOSFET (Metal Oxide)
1000 V
3A (Tc)
10V
4.5V @ 250µA
36 nC @ 10 V
1100 pF @ 25 V
±20V
-
125W (Tc)
4.8Ohm @ 1.5A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
TO-263 (D2PAK)
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
E3M0016120K
Wolfspeed, Inc.

SIC, MOSFET, 16M, 1200V, TO-247-

  • FET Type: N-Channel
  • Technology: SiC (Silicon Carbide Junction Transistor)
  • Drain to Source Voltage (Vdss): 1200 V
  • Current - Continuous Drain (Id) @ 25°C: 125A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 15V
  • Vgs(th) (Max) @ Id: 3.6V @ 22.08mA
  • Gate Charge (Qg) (Max) @ Vgs: 223 nC @ 15 V
  • Input Capacitance (Ciss) (Max) @ Vds: 6922 pF @ 1000 V
  • Vgs (Max): +19V, -8V
  • FET Feature: -
  • Power Dissipation (Max): 483W (Tc)
  • Rds On (Max) @ Id, Vgs: 22mOhm @ 80.28A, 15V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247-4L
  • Package / Case: TO-247-4
Paket: -
Lager1.218
SiC (Silicon Carbide Junction Transistor)
1200 V
125A (Tc)
15V
3.6V @ 22.08mA
223 nC @ 15 V
6922 pF @ 1000 V
+19V, -8V
-
483W (Tc)
22mOhm @ 80.28A, 15V
-55°C ~ 175°C (TJ)
Through Hole
TO-247-4L
TO-247-4
IXFH46N65X3
IXYS

MOSFET 46A 650V X3 TO247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5.2V @ 2.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2730 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 520W (Tc)
  • Rds On (Max) @ Id, Vgs: 73mOhm @ 23A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247 (IXFH)
  • Package / Case: TO-247-3
Paket: -
Lager1.056
MOSFET (Metal Oxide)
650 V
46A (Tc)
10V
5.2V @ 2.5mA
40 nC @ 10 V
2730 pF @ 25 V
±20V
-
520W (Tc)
73mOhm @ 23A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-247 (IXFH)
TO-247-3
NDP4050
Fairchild Semiconductor

NDP4050 - 15A, 50V, 0.1OHM, N-CH

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 50 V
  • Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 25 V
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 100mOhm @ 7.5A, 10V
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220-3
  • Package / Case: TO-220-3
Paket: -
Request a Quote
MOSFET (Metal Oxide)
50 V
15A (Tc)
-
4V @ 250µA
17 nC @ 10 V
450 pF @ 25 V
-
-
-
100mOhm @ 7.5A, 10V
-
Through Hole
TO-220-3
TO-220-3
G050P03T
Goford Semiconductor

MOSFET P-CH 30V 85A TO-220

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 100W (Tc)
  • Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220
  • Package / Case: TO-220-3
Paket: -
Request a Quote
MOSFET (Metal Oxide)
-
85A (Tc)
4.5V, 10V
2.5V @ 250µA
-
-
±20V
-
100W (Tc)
5mOhm @ 20A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220
TO-220-3
EPC2619
EPC

TRANS GAN 100V .0042 OHM 6LGA

  • FET Type: N-Channel
  • Technology: GaNFET (Gallium Nitride)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 29A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 5V
  • Vgs(th) (Max) @ Id: 2.5V @ 5.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1180 pF @ 50 V
  • Vgs (Max): +6V, -4V
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 3.3mOhm @ 16A, 5V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: Die
  • Package / Case: Die
Paket: -
Lager9.858
GaNFET (Gallium Nitride)
100 V
29A (Ta)
5V
2.5V @ 5.5mA
8.3 nC @ 5 V
1180 pF @ 50 V
+6V, -4V
-
-
3.3mOhm @ 16A, 5V
-40°C ~ 150°C (TJ)
Surface Mount
Die
Die
IXFP14N55X2M
IXYS

IXFP14N55X2M

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
Paket: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TK190E65Z-S1X
Toshiba Semiconductor and Storage

650V DTMOS VI TO-220 190MOHM

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 610µA
  • Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1370 pF @ 300 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 130W (Tc)
  • Rds On (Max) @ Id, Vgs: 190mOhm @ 7.5A, 10V
  • Operating Temperature: 150°C
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220
  • Package / Case: TO-220-3
Paket: -
Lager363
MOSFET (Metal Oxide)
650 V
15A (Ta)
10V
4V @ 610µA
25 nC @ 10 V
1370 pF @ 300 V
±30V
-
130W (Tc)
190mOhm @ 7.5A, 10V
150°C
Through Hole
TO-220
TO-220-3