Transistoren - FETs, MOSFET - Einzeln

BSO300N03S

Infineon Technologies

MOSFET N-CH 30V 5.7A 8DSO

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2V @ 8µA
• Gate Charge (Qg) (Max) @ Vgs: 4.6nC @ 5V
• Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 15V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 1.56W (Ta)
• Rds On (Max) @ Id, Vgs: 30 mOhm @ 7.2A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-DSO-8
• Package / Case: 8-SOIC (0.154", 3.90mm Width)

Paket: 8-SOIC (0.154", 3.90mm Width)

IRF6611

Infineon Technologies

MOSFET N-CH 30V 32A DIRECTFET

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 150A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.25V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 56nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 4860pF @ 15V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 3.9W (Ta), 89W (Tc)
• Rds On (Max) @ Id, Vgs: 2.6 mOhm @ 27A, 10V
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: DIRECTFET? MX
• Package / Case: DirectFET? Isometric MX

Paket: DirectFET? Isometric MX

BSP123L6327HTSA1

Infineon Technologies

MOSFET N-CH 100V 370MA SOT223

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 100V
• Current - Continuous Drain (Id) @ 25°C: 370mA (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 2.8V, 10V
• Vgs(th) (Max) @ Id: 1.8V @ 50µA
• Gate Charge (Qg) (Max) @ Vgs: 2.4nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 70pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 1.79W (Ta)
• Rds On (Max) @ Id, Vgs: 6 Ohm @ 370mA, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-SOT223-4
• Package / Case: TO-261-4, TO-261AA

Paket: TO-261-4, TO-261AA

NP20P04SLG-E1-AY

Renesas Electronics America

MOSFET P-CH 40V 20A TO-252

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 40V
• Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1650pF @ 10V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 1.2W (Ta), 38W (Tc)
• Rds On (Max) @ Id, Vgs: 25 mOhm @ 10A, 10V
• Operating Temperature: 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: TO-252 (MP-3ZK)
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

Paket: TO-252-3, DPak (2 Leads + Tab), SC-63

2SJ360(TE12L,F)

Toshiba Semiconductor and Storage

MOSFET P-CH 60V 1A SC-62

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
• Vgs(th) (Max) @ Id: 2V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 155pF @ 10V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 500mW (Ta)
• Rds On (Max) @ Id, Vgs: 730 mOhm @ 500mA, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PW-MINI
• Package / Case: TO-243AA

Paket: TO-243AA

NTR4502PT3G

ON Semiconductor

MOSFET P-CH 30V 1.13A SOT-23

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 1.13A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 3V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 200pF @ 15V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 400mW (Tj)
• Rds On (Max) @ Id, Vgs: 200 mOhm @ 1.95A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: SOT-23-3 (TO-236)
• Package / Case: TO-236-3, SC-59, SOT-23-3

Paket: TO-236-3, SC-59, SOT-23-3

HUFA75345P3

Fairchild/ON Semiconductor

MOSFET N-CH 55V 75A TO-220AB

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 55V
• Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 275nC @ 20V
• Input Capacitance (Ciss) (Max) @ Vds: 4000pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 325W (Tc)
• Rds On (Max) @ Id, Vgs: 7 mOhm @ 75A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220AB
• Package / Case: TO-220-3

Paket: TO-220-3

NTMS3P03R2

ON Semiconductor

MOSFET P-CH 30V 2.34A 8-SOIC

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 2.34A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 750pF @ 24V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 730mW (Ta)
• Rds On (Max) @ Id, Vgs: 85 mOhm @ 3.05A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 8-SOIC
• Package / Case: 8-SOIC (0.154", 3.90mm Width)

Paket: 8-SOIC (0.154", 3.90mm Width)

IRFR9014TRR

Vishay Siliconix

MOSFET P-CH 60V 5.1A DPAK

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 5.1A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 270pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
• Rds On (Max) @ Id, Vgs: 500 mOhm @ 3.1A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D-Pak
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

Paket: TO-252-3, DPak (2 Leads + Tab), SC-63

IRL1404ZSPBF

Infineon Technologies

MOSFET N-CH 40V 75A D2PAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 40V
• Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.7V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 110nC @ 5V
• Input Capacitance (Ciss) (Max) @ Vds: 5080pF @ 25V
• Vgs (Max): ±16V
• FET Feature: -
• Power Dissipation (Max): 230W (Tc)
• Rds On (Max) @ Id, Vgs: 3.1 mOhm @ 75A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D2PAK
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Paket: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IPI90N06S404AKSA2

Infineon Technologies

MOSFET N-CHANNEL_55/60V

• FET Type: -
• Technology: -
• Drain to Source Voltage (Vdss): -
• Current - Continuous Drain (Id) @ 25°C: -
• Drive Voltage (Max Rds On, Min Rds On): -
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: -
• Vgs (Max): -
• FET Feature: -
• Power Dissipation (Max): -
• Rds On (Max) @ Id, Vgs: -
• Operating Temperature: -
• Mounting Type: -
• Supplier Device Package: -
• Package / Case: -

Paket: -

FCP16N60N_F102

Fairchild/ON Semiconductor

FCP16N60N IN TO220 F102 T/F OPTI

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600V
• Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 52.3nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 2170pF @ 100V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 134.4W (Tc)
• Rds On (Max) @ Id, Vgs: 199 mOhm @ 8A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220F
• Package / Case: TO-220-3 Full Pack

Paket: TO-220-3 Full Pack

DMNH6008SCT

Diodes Incorporated

MOSFET NCH 60V 130A TO220AB

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 2596pF @ 30V
• Vgs (Max): 20V
• FET Feature: -
• Power Dissipation (Max): 210W (Tc)
• Rds On (Max) @ Id, Vgs: 8 mOhm @ 20A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220AB
• Package / Case: TO-220-3

Paket: TO-220-3

SIB488DK-T1-GE3

Vishay Siliconix

MOSFET N-CH 12V 9A SC75-6

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 12V
• Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
• Vgs(th) (Max) @ Id: 1V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 20nC @ 8V
• Input Capacitance (Ciss) (Max) @ Vds: 725pF @ 6V
• Vgs (Max): ±8V
• FET Feature: -
• Power Dissipation (Max): 2.4W (Ta), 13W (Tc)
• Rds On (Max) @ Id, Vgs: 20 mOhm @ 6.3A, 4.5V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PowerPAK? SC-75-6L Single
• Package / Case: PowerPAK? SC-75-6L

Paket: PowerPAK? SC-75-6L

NTJS3157NT2G

ON Semiconductor

MOSFET N-CH 20V 3.2A SOT-363

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
• Vgs(th) (Max) @ Id: 1V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 10V
• Vgs (Max): ±8V
• FET Feature: -
• Power Dissipation (Max): 1W (Ta)
• Rds On (Max) @ Id, Vgs: 60 mOhm @ 4A, 4.5V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: SC-88/SC70-6/SOT-363
• Package / Case: 6-TSSOP, SC-88, SOT-363

Paket: 6-TSSOP, SC-88, SOT-363

SIHH24N65E-T1-GE3

Vishay Siliconix

MOSFET N-CHAN 650V 23A POWERPAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 650V
• Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 116nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 2814pF @ 100V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 202W (Tc)
• Rds On (Max) @ Id, Vgs: 150 mOhm @ 12A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PowerPAK? 8 x 8
• Package / Case: 8-PowerTDFN

Paket: 8-PowerTDFN

RE1L002SNTL

Rohm Semiconductor

2.5V DRIVE NCH MOSFET

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 250mA (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 2.3V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: 15pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 150W (Tc)
• Rds On (Max) @ Id, Vgs: 2.4 Ohm @ 250mA, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: EMT3F (SOT-416FL)
• Package / Case: SC-89, SOT-490

Paket: SC-89, SOT-490

FDPF13N50FT

Fairchild/ON Semiconductor

MOSFET N-CH 500V 12A TO-220F

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 500V
• Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1930pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 42W (Tc)
• Rds On (Max) @ Id, Vgs: 540 mOhm @ 6A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220F
• Package / Case: TO-220-3 Full Pack

Paket: TO-220-3 Full Pack

SIHA14N60E-E3

Vishay Siliconix

MOSFET N-CH 600V 13A TO220

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600V
• Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 64nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1205pF @ 100V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 147W (Tc)
• Rds On (Max) @ Id, Vgs: 309 mOhm @ 7A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220 Full Pack
• Package / Case: TO-220-3 Full Pack

Paket: TO-220-3 Full Pack

STP7N52K3

STMicroelectronics

MOSFET N-CH 525V 6.2A TO220

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 525V
• Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4.5V @ 50µA
• Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 737pF @ 100V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 90W (Tc)
• Rds On (Max) @ Id, Vgs: 980 mOhm @ 3.1A, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220AB
• Package / Case: TO-220-3

Paket: TO-220-3

RQ3E160ADTB

Rohm Semiconductor

MOSFET N-CH 30V 16A 8HSMT

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 16A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 51nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 2550pF @ 15V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 2W (Ta)
• Rds On (Max) @ Id, Vgs: 4.5 mOhm @ 16A, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 8-HSMT (3.2x3)
• Package / Case: 8-PowerVDFN

Paket: 8-PowerVDFN

IRFR6215PBF

Infineon Technologies

MOSFET P-CH 150V 13A DPAK

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 150V
• Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 66nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 860pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 110W (Tc)
• Rds On (Max) @ Id, Vgs: 295 mOhm @ 6.6A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D-Pak
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

Paket: TO-252-3, DPak (2 Leads + Tab), SC-63

BST82,235

Nexperia USA Inc.

MOSFET N-CH 100V 190MA SOT-23

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 100V
• Current - Continuous Drain (Id) @ 25°C: 190mA (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 5V
• Vgs(th) (Max) @ Id: 2V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: 40pF @ 10V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 830mW (Tc)
• Rds On (Max) @ Id, Vgs: 10 Ohm @ 150mA, 5V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: TO-236AB (SOT23)
• Package / Case: TO-236-3, SC-59, SOT-23-3

Paket: TO-236-3, SC-59, SOT-23-3

APT20M16LFLLG

Microchip Technology

MOSFET N-CH 200V 100A TO264

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 200 V
• Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): -
• Vgs(th) (Max) @ Id: 5V @ 2.5mA
• Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 7220 pF @ 25 V
• Vgs (Max): -
• FET Feature: -
• Power Dissipation (Max): -
• Rds On (Max) @ Id, Vgs: 16mOhm @ 50A, 10V
• Operating Temperature: -
• Mounting Type: Through Hole
• Supplier Device Package: TO-264 [L]
• Package / Case: TO-264-3, TO-264AA

Paket: -

DMT10H9M9SH3

Diodes Incorporated

MOSFET BVDSS: 61V~100V TO251 TUB

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 100 V
• Current - Continuous Drain (Id) @ 25°C: 84A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 2085 pF @ 50 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 114W (Tc)
• Rds On (Max) @ Id, Vgs: 9mOhm @ 20A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-251
• Package / Case: TO-251-3 Stub Leads, IPAK

Paket: -

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NDP7060L

onsemi

MOSFET N-CH 60V 75A TO220-3

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60 V
• Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): -
• Vgs(th) (Max) @ Id: 2V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 115 nC @ 5 V
• Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 25 V
• Vgs (Max): -
• FET Feature: -
• Power Dissipation (Max): -
• Rds On (Max) @ Id, Vgs: 15mOhm @ 37.5A, 5V
• Operating Temperature: -
• Mounting Type: Through Hole
• Supplier Device Package: TO-220-3
• Package / Case: TO-220-3

Paket: -

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SIHF9620S-GE3

Vishay Siliconix

MOSFET P-CHANNEL 200V

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 200 V
• Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 40W (Tc)
• Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.5A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: TO-263 (D2PAK)
• Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Paket: -

R6515KNX3C16

Rohm Semiconductor

650V 15A, TO-220AB, HIGH-SPEED S

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 650 V
• Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5V @ 430µA
• Gate Charge (Qg) (Max) @ Vgs: 27.5 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 25 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 161W (Tc)
• Rds On (Max) @ Id, Vgs: 315mOhm @ 6.5A, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220AB
• Package / Case: TO-220-3

Paket: -

IPB026N10NF2SATMA1

Infineon Technologies

TRENCH >=100V

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 100 V
• Current - Continuous Drain (Id) @ 25°C: 162A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
• Vgs(th) (Max) @ Id: 3.8V @ 169µA
• Gate Charge (Qg) (Max) @ Vgs: 154 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 7300 pF @ 50 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 250W (Tc)
• Rds On (Max) @ Id, Vgs: 2.65mOhm @ 100A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-TO263-3
• Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Paket: -

ISC045N03L5SATMA1

Infineon Technologies

MOSFET N-CH 30V 18A/63A TDSON

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30 V
• Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 63A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 15 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 2.5W (Ta), 30W (Tc)
• Rds On (Max) @ Id, Vgs: 4.5mOhm @ 30A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-TDSON-8-6
• Package / Case: 8-PowerTDFN

Paket: -