Bild |
Teilenummer |
Hersteller |
Beschreibung |
Paket |
Lager |
Anzahl |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
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Infineon Technologies |
MOSFET N-CH 30V 42A I2PAK
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Paket: TO-262-3 Long Leads, I2Pak, TO-262AA |
Lager13.764 |
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MOSFET (Metal Oxide) | 30V | 42A (Tc) | 4.5V, 10V | 2V @ 37µA | 30.5nC @ 10V | 1130pF @ 25V | ±20V | - | 83W (Tc) | 12.9 mOhm @ 21A, 10V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO262-3-1 | TO-262-3 Long Leads, I2Pak, TO-262AA |
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Infineon Technologies |
MOSFET N-CH 20V 92A D2PAK
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Paket: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Lager398.400 |
|
MOSFET (Metal Oxide) | 20V | 92A (Tc) | 4.5V, 10V | 2.45V @ 250µA | 24nC @ 4.5V | 2150pF @ 10V | ±20V | - | 79W (Tc) | 6 mOhm @ 15A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 30V 30A DPAK
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Paket: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Lager128.208 |
|
MOSFET (Metal Oxide) | 30V | 30A (Tc) | 4.5V, 10V | 2V @ 23µA | 19nC @ 10V | 700pF @ 25V | ±20V | - | 60W (Tc) | 20 mOhm @ 18A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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STMicroelectronics |
MOSFET N-CH 600V 11A TO-220
|
Paket: TO-220-3 |
Lager15.600 |
|
MOSFET (Metal Oxide) | 600V | 11A (Tc) | 10V | 4V @ 250µA | 49nC @ 10V | 1211pF @ 25V | ±30V | - | 110W (Tc) | 450 mOhm @ 5.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Infineon Technologies |
SMALL SIGNAL+P-CH
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Paket: - |
Lager2.640 |
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- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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IXYS |
MOSFET N-CH 650V 12A TO-247
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Paket: TO-247-3 |
Lager7.024 |
|
MOSFET (Metal Oxide) | 650V | 12A (Tc) | 10V | 5V @ 250µA | 17nC @ 10V | 1100pF @ 25V | ±30V | - | 180W (Tc) | 300 mOhm @ 6A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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ON Semiconductor |
MOSFET N-CH 40V 370A 5DFN
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Paket: 8-PowerTDFN, 5 Leads |
Lager2.496 |
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MOSFET (Metal Oxide) | 40V | 370A (Tc) | 4.5V, 10V | 2V @ 250µA | 81nC @ 4.5V | 12168pF @ 25V | ±20V | - | 200W (Tc) | 0.67 mOhm @ 50A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN, 5 Leads |
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Texas Instruments |
MOSFET P-CH 12V 2.2A 4DSBGA
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Paket: 4-UFBGA, DSBGA |
Lager4.544 |
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MOSFET (Metal Oxide) | 12V | 2.2A (Ta) | 1.5V, 4.5V | 900mV @ 250µA | 3.8nC @ 4.5V | 512pF @ 6V | -6V | - | 1W (Ta) | 53 mOhm @ 500mA, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | 4-DSBGA (1x1) | 4-UFBGA, DSBGA |
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STMicroelectronics |
N-CHANNEL 800 V, 1.50 OHM TYP.,
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Paket: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Lager3.040 |
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MOSFET (Metal Oxide) | 800V | 4A (Tc) | 10V | 5V @ 100µA | 5nC @ 10V | 177pF @ 100V | ±30V | - | 60W (Tc) | 1.75 Ohm @ 2A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET N-CH 100V 28A D2PAK
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Paket: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Lager10.896 |
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MOSFET (Metal Oxide) | 100V | 28A (Tc) | 10V | 4V @ 250µA | 72nC @ 10V | 1700pF @ 25V | ±20V | - | 3.7W (Ta), 150W (Tc) | 77 mOhm @ 17A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK (TO-263) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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Fairchild/ON Semiconductor |
MOSFET N-CH 60V 50A TO-220AB
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Paket: TO-220-3 |
Lager1.115.376 |
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MOSFET (Metal Oxide) | 60V | 50A (Tc) | 10V | 4V @ 250µA | 150nC @ 20V | 2020pF @ 25V | ±20V | - | 131W (Tc) | 22 mOhm @ 50A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Microchip Technology |
MOSFET N-CH 80V 300MA TO92-3
|
Paket: TO-226-3, TO-92-3 (TO-226AA) |
Lager15.660 |
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MOSFET (Metal Oxide) | 80V | 300mA (Tj) | 10V | 2V @ 1mA | - | 50pF @ 25V | ±30V | - | 1W (Tc) | 4 Ohm @ 1A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) |
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Infineon Technologies |
MOSFET N-CH 30V 50A TO252-3
|
Paket: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Lager7.904 |
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MOSFET (Metal Oxide) | 30V | 50A (Tc) | 4.5V, 10V | 2.2V @ 250µA | 23nC @ 10V | 2400pF @ 15V | ±20V | - | 56W (Tc) | 6 mOhm @ 30A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Fairchild/ON Semiconductor |
MOSFET N-CH 300V 28A D2PAK
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Paket: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Lager15.924 |
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MOSFET (Metal Oxide) | 300V | 28A (Tc) | 10V | 5V @ 250µA | 50nC @ 10V | 2250pF @ 25V | ±30V | - | 250W (Tc) | 129 mOhm @ 14A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK (TO-263AB) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 30V 100A TDSON-8
|
Paket: 8-PowerTDFN |
Lager49.956 |
|
MOSFET (Metal Oxide) | 30V | 22A (Ta), 100A (Tc) | 4.5V, 10V | 2.2V @ 250µA | 52nC @ 10V | 4300pF @ 15V | ±20V | - | 2.5W (Ta), 57W (Tc) | 3.4 mOhm @ 30A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8 | 8-PowerTDFN |
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Rohm Semiconductor |
MOSFET N-CH 30V 15A HSMT8
|
Paket: 8-PowerVDFN |
Lager22.386 |
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MOSFET (Metal Oxide) | 30V | 15A (Ta) | 4.5V, 10V | 2.5V @ 1mA | 45nC @ 10V | 3000pF @ 15V | ±20V | - | 2W (Ta) | 5.3 mOhm @ 15A, 10V | 150°C (TJ) | Surface Mount | 8-HSMT (3.2x3) | 8-PowerVDFN |
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Fairchild/ON Semiconductor |
MOSFET N-CH 60V 4A SOT-223-4
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Paket: TO-261-4, TO-261AA |
Lager1.640.508 |
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MOSFET (Metal Oxide) | 60V | 4A (Ta) | 4.5V, 10V | 2V @ 250µA | 20nC @ 10V | 345pF @ 25V | ±20V | - | 3W (Ta) | 100 mOhm @ 4A, 10V | -65°C ~ 150°C (TJ) | Surface Mount | SOT-223-4 | TO-261-4, TO-261AA |
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Diodes Incorporated |
MOSFET P-CH 20V 1.5A SOT-323
|
Paket: SC-70, SOT-323 |
Lager479.544 |
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MOSFET (Metal Oxide) | 20V | 1.5A (Ta) | 1.8V, 4.5V | 900mV @ 250µA | - | 627pF @ 10V | ±12V | - | 350mW (Ta) | 100 mOhm @ 1.5A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-323 | SC-70, SOT-323 |
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onsemi |
MOSFET N-CH 600V 4A DPAK
|
Paket: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 600 V | 4A (Tc) | 10V | 4V @ 250µA | 20 nC @ 10 V | 810 pF @ 25 V | ±30V | - | 80W (Tc) | 2Ohm @ 2A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-252AA | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
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Harris Corporation |
N-CHANNEL POWER MOSFET
|
Paket: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 120 V | 15A (Tc) | 10V | 4V @ 1mA | - | 1700 pF @ 25 V | ±20V | - | 75W (Tc) | 150mOhm @ 7.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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Taiwan Semiconductor Corporation |
MOSFET N-CH 60V 7A/28A 8PDFN
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Paket: - |
Lager35.805 |
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MOSFET (Metal Oxide) | 60 V | 7A (Ta), 28A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 18 nC @ 10 V | 969 pF @ 30 V | ±20V | - | 3.1W (Ta), 56W (Tc) | 28mOhm @ 7A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | 8-PDFN (5.2x5.75) | 8-PowerLDFN |
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Infineon Technologies |
HIGH POWER_NEW
|
Paket: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 650 V | 19A (Tc) | 10V | 4.5V @ 420µA | 36 nC @ 10 V | 1694 pF @ 400 V | ±20V | - | 98W (Tc) | 125mOhm @ 8.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-3 | TO-247-3 |
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Goford Semiconductor |
N40V,RD(MAX)<7M@10V,RD(MAX)<12M@
|
Paket: - |
Lager7.296 |
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MOSFET (Metal Oxide) | 40 V | 60A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 29 nC @ 10 V | 1800 pF @ 20 V | ±20V | - | 65W (Tc) | 7mOhm @ 30A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-252 (DPAK) | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
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IXYS |
MOSFET P-CH 100V 26A TO252
|
Paket: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 100 V | 26A (Tc) | 10V | 4.5V @ 250µA | 52 nC @ 10 V | 3820 pF @ 25 V | ±15V | - | 150W (Tc) | 90mOhm @ 13A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-252AA | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
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Infineon Technologies |
N-CHANNEL POWER MOSFET
|
Paket: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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GeneSiC Semiconductor |
SIC MOSFET N-CH 19A TO263-7
|
Paket: - |
Lager3.180 |
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SiCFET (Silicon Carbide) | 1200 V | 19A (Tc) | 15V | 2.7V @ 5mA (Typ) | 23 nC @ 15 V | 724 pF @ 800 V | +20V, -10V | - | 128W (Tc) | 208mOhm @ 10A, 15V | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-7 | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA |
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Vishay Siliconix |
MOSFET N-CH 80V 16A/55.5A PPAK
|
Paket: - |
Lager32.643 |
|
MOSFET (Metal Oxide) | 80 V | 16A (Ta), 55.5A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 50 nC @ 10 V | 2070 pF @ 40 V | ±20V | - | 4.8W (Ta), 57W (Tc) | 8.5mOhm @ 10A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 1212-8S | PowerPAK® 1212-8S |
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Diodes Incorporated |
MOSFET N-CH 30V 76A POWERDI3333
|
Paket: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 30 V | 76A (Tc) | 4.5V, 10V | 2.4V @ 250µA | 36 nC @ 10 V | 1667 pF @ 15 V | ±20V | - | 1.98W (Ta) | 5mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerDI3333-8 (Type UX) | 8-PowerVDFN |
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Micro Commercial Co |
MOSFET N-CH 100V 130A D2PAK
|
Paket: - |
Lager98.736 |
|
MOSFET (Metal Oxide) | 100 V | 130A (Tc) | 10V | 4V @ 250µA | 101.6 nC @ 10 V | 6124.6 pF @ 50 V | ±20V | - | 192W (Tc) | 4.6mOhm @ 60A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
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Nexperia USA Inc. |
SMALL SIGNAL MOSFETS FOR PORTABL
|
Paket: - |
Lager6.891 |
|
MOSFET (Metal Oxide) | 20 V | 7.6A (Ta) | 1.5V, 4.5V | 900mV @ 250µA | 24 nC @ 4.5 V | 1275 pF @ 10 V | ±10V | - | 1.8W (Ta), 12.5W (Tc) | 21mOhm @ 7.6A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | DFN2020M-6 | 6-UDFN Exposed Pad |