Bild |
Teilenummer |
Hersteller |
Beschreibung |
Paket |
Lager |
Anzahl |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
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Vishay Siliconix |
MOSFET P-CH 40V 50MA TO-72
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Paket: TO-206AF, TO-72-4 Metal Can |
Lager4.912 |
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MOSFET (Metal Oxide) | 40V | 50mA (Ta) | 20V | 5V @ 10µA | - | 3.5pF @ 15V | ±30V | - | 375mW (Ta) | 250 Ohm @ 100µA, 20V | -55°C ~ 150°C (TJ) | Through Hole | TO-72 | TO-206AF, TO-72-4 Metal Can |
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Microsemi Corporation |
MOSFET N-CH 18-LCC
|
Paket: 18-BQFN Exposed Pad |
Lager7.968 |
|
MOSFET (Metal Oxide) | 200V | 2.25A (Tc) | 10V | 4V @ 250µA | 8.6nC @ 10V | - | ±20V | - | 800mW (Ta), 15W (Tc) | 1.6 Ohm @ 2.25A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 18-ULCC (9.14x7.49) | 18-BQFN Exposed Pad |
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ON Semiconductor |
MOSFET P-CH 20V 0.88A SC-88
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Paket: 6-TSSOP, SC-88, SOT-363 |
Lager5.008 |
|
- | - | - | - | - | - | - | - | - | - | - | - | Surface Mount | SC-88/SC70-6/SOT-363 | 6-TSSOP, SC-88, SOT-363 |
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Microsemi Corporation |
MOSFET N-CH 500V 163A J3
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Paket: J3 Module |
Lager7.344 |
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MOSFET (Metal Oxide) | 500V | 163A | 10V | 5V @ 10mA | 492nC @ 10V | 22400pF @ 25V | ±30V | - | 1136W (Tc) | 19 mOhm @ 81.5A, 10V | -40°C ~ 150°C (TJ) | Chassis Mount | Module | J3 Module |
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ON Semiconductor |
MOSFET N-CH 30V 8.3A SO-8FL
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Paket: 8-PowerTDFN, 5 Leads |
Lager6.032 |
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MOSFET (Metal Oxide) | 30V | 8.3A (Ta), 57A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 17nC @ 4.5V | 1436pF @ 12V | ±20V | - | 870mW (Ta), 41.7W (Tc) | 7 mOhm @ 30A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN, 5 Leads |
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Vishay Siliconix |
MOSFET N-CH 800V 4.1A TO-220AB
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Paket: TO-220-3 |
Lager216.480 |
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MOSFET (Metal Oxide) | 800V | 4.1A (Tc) | 10V | 4V @ 250µA | 78nC @ 10V | 1300pF @ 25V | ±20V | - | 125W (Tc) | 3 Ohm @ 2.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 400V 16A TO-247AC
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Paket: TO-247-3 |
Lager6.960 |
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MOSFET (Metal Oxide) | 400V | 16A (Tc) | 10V | 4V @ 250µA | 150nC @ 10V | 2600pF @ 25V | ±20V | - | 190W (Tc) | 300 mOhm @ 9.6A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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STMicroelectronics |
MOSFET N-CH 600V 19.5A I2PAK
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Paket: TO-262-3 Long Leads, I2Pak, TO-262AA |
Lager7.648 |
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MOSFET (Metal Oxide) | 600V | 19.5A (Tc) | 10V | 5V @ 250µA | 70nC @ 10V | 2050pF @ 50V | ±25V | - | 150W (Tc) | 180 mOhm @ 10A, 10V | 150°C (TJ) | Through Hole | I2PAK | TO-262-3 Long Leads, I2Pak, TO-262AA |
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Infineon Technologies |
MOSFET N-CH TO263-3
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Paket: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Lager7.888 |
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MOSFET (Metal Oxide) | 650V | 24A (Tc) | 10V | 4V @ 590µA | 45nC @ 10V | 2140pF @ 400V | ±20V | - | 128W (Tc) | 95 mOhm @ 11.8A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO263 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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IXYS |
MOSFET N-CH 600V 47A TO-247
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Paket: TO-247-3 |
Lager5.024 |
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MOSFET (Metal Oxide) | 600V | 47A (Tc) | 10V | 4V @ 2mA | 650nC @ 10V | - | ±20V | Super Junction | - | 70 mOhm @ 30A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-247AD (IXKH) | TO-247-3 |
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Nexperia USA Inc. |
PSMN5R3-25MLD/MLFPAK/REEL 7 Q
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Paket: SOT-1210, 8-LFPAK33 (5-Lead) |
Lager5.008 |
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MOSFET (Metal Oxide) | 25V | 70A | 4.5V, 10V | 2.2V @ 1mA | 12.7nC @ 10V | 858pF @ 12V | ±20V | Schottky Diode (Body) | 51W (Tc) | 5.9 mOhm @ 15A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | LFPAK33 | SOT-1210, 8-LFPAK33 (5-Lead) |
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STMicroelectronics |
MOSFET N CH 650V 42A TO247-4
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Paket: TO-247-4 |
Lager6.224 |
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MOSFET (Metal Oxide) | 650V | 42A (Tc) | 10V | 5V @ 250µA | 98nC @ 10V | 4200pF @ 100V | ±25V | - | 250W (Tc) | 63 mOhm @ 21A, 10V | 150°C (TJ) | Through Hole | TO-247-4L | TO-247-4 |
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Fairchild/ON Semiconductor |
MOSFET N-CH 80V 90A TO-3P
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Paket: TO-3P-3, SC-65-3 |
Lager247.464 |
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MOSFET (Metal Oxide) | 80V | 90A (Tc) | 10V | 4V @ 250µA | 110nC @ 10V | 3250pF @ 25V | ±25V | - | 214W (Tc) | 16 mOhm @ 45A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-3PN | TO-3P-3, SC-65-3 |
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Vishay Siliconix |
MOSFET P-CH 30V 6A 1206-8
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Paket: 8-SMD, Flat Lead |
Lager81.588 |
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MOSFET (Metal Oxide) | 30V | 6A (Tc) | 4.5V, 10V | 3V @ 250µA | 42nC @ 10V | 1340pF @ 15V | ±20V | - | 2.5W (Ta), 6.3W (Tc) | 30 mOhm @ 7.2A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 1206-8 ChipFET? | 8-SMD, Flat Lead |
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STMicroelectronics |
MOSFET N-CH 55V 80A I2PAK
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Paket: TO-262-3 Long Leads, I2Pak, TO-262AA |
Lager196.248 |
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MOSFET (Metal Oxide) | 55V | 80A (Tc) | 5V, 10V | 2.5V @ 250µA | 100nC @ 4.5V | 4350pF @ 25V | ±16V | - | 300W (Tc) | 8 mOhm @ 40A, 10V | 175°C (TJ) | Through Hole | I2PAK | TO-262-3 Long Leads, I2Pak, TO-262AA |
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Nexperia USA Inc. |
MOSFET N-CH 80V 120A TO220AB
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Paket: TO-220-3 |
Lager27.996 |
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MOSFET (Metal Oxide) | 80V | 120A (Tc) | 10V | 4V @ 1mA | 111nC @ 10V | 8161pF @ 40V | ±20V | - | 306W (Tc) | 4.3 mOhm @ 25A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Infineon Technologies |
MOSFET P-CH 30V 90A TO252-3
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Paket: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Lager615.552 |
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MOSFET (Metal Oxide) | 30V | 90A (Tc) | 10V | 4V @ 253µA | 130nC @ 10V | 10300pF @ 25V | ±20V | - | 137W (Tc) | 4.5 mOhm @ 90A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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IXYS |
MOSFET N-CH 500V 6A TO220AB
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Paket: TO-220-3 |
Lager6.372 |
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MOSFET (Metal Oxide) | 500V | 6A (Tc) | - | - | 96nC @ 5V | 2800pF @ 25V | ±20V | Depletion Mode | 300W (Tc) | 500 mOhm @ 3A, 0V | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 12V 6A 1206-8
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Paket: 8-SMD, Flat Lead |
Lager225.264 |
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MOSFET (Metal Oxide) | 12V | 6A (Tc) | 1.8V, 4.5V | 1V @ 250µA | 32nC @ 8V | 1100pF @ 6V | ±8V | - | 2.3W (Ta), 5.7W (Tc) | 20 mOhm @ 6.5A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | 1206-8 ChipFET? | 8-SMD, Flat Lead |
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Fairchild/ON Semiconductor |
MOSFET N-CH 30V 5A SSOT-6
|
Paket: SOT-23-6 Thin, TSOT-23-6 |
Lager1.659.636 |
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MOSFET (Metal Oxide) | 30V | 5A (Ta) | 4.5V, 10V | 2V @ 250µA | 17nC @ 10V | 350pF @ 15V | ±20V | - | 1.6W (Ta) | 35 mOhm @ 5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SuperSOT?-6 | SOT-23-6 Thin, TSOT-23-6 |
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IXYS |
MOSFET N-CH 600V 30A TO-268
|
Paket: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA |
Lager68.400 |
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MOSFET (Metal Oxide) | 600V | 30A (Tc) | 10V | 4.5V @ 250µA | 335nC @ 10V | 10700pF @ 25V | ±20V | - | 540W (Tc) | 240 mOhm @ 15A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-268 | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA |
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onsemi |
SICFET N-CH 1200V 19.5A D2PAK
|
Paket: - |
Lager2.355 |
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SiCFET (Silicon Carbide) | 1200 V | 19.5A (Tc) | 20V | 4.3V @ 2.5mA | 33.8 nC @ 20 V | 678 pF @ 800 V | +25V, -15V | - | 136W (Tc) | 224mOhm @ 12A, 20V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK-7 | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA |
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Vishay Siliconix |
AUTOMOTIVE N-CHANNEL 60 V (D-S)
|
Paket: - |
Lager20.700 |
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MOSFET (Metal Oxide) | 60 V | 18A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 14 nC @ 10 V | 870 pF @ 25 V | ±20V | - | 33W (Tc) | 23mOhm @ 2.4A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PowerPAK® 1212-8W | PowerPAK® 1212-8W |
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Vishay Siliconix |
MOSFET N-CH 600V 60A TO247AC
|
Paket: - |
Lager1.041 |
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MOSFET (Metal Oxide) | 600 V | 60A (Tc) | 10V | 4V @ 250µA | 410 nC @ 10 V | 5348 pF @ 100 V | ±20V | - | 417W (Tc) | 41mOhm @ 35A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-247AC | TO-247-3 |
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Diodes Incorporated |
MOSFET BVDSS: 25V~30V PowerDI506
|
Paket: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 30 V | 100A (Tc) | 6V, 10V | 3V @ 250µA | 127 nC @ 10 V | 3775 pF @ 15 V | ±20V | - | 1.7W (Ta) | 3.8mOhm @ 20A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PowerDI5060-8 (Type Q) | 8-PowerTDFN |
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onsemi |
MOSFET N-CH 200V 28A TO220-3
|
Paket: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 200 V | 19.4A (Tc) | 10V | 5V @ 250µA | 40 nC @ 10 V | 1600 pF @ 25 V | ±30V | - | 140W (Tc) | 150mOhm @ 9.7A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 900V 6.9A TO220-3
|
Paket: - |
Lager1.470 |
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MOSFET (Metal Oxide) | 900 V | 6.9A (Tc) | 10V | 3.5V @ 460µA | 42 nC @ 10 V | 1100 pF @ 100 V | ±20V | - | 104W (Tc) | 800mOhm @ 4.1A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
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Renesas Electronics Corporation |
MOSFET P-CH 20V SC-95
|
Paket: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 20 V | 2.5A (Ta) | - | 1.5V @ 1mA | 2.3 nC @ 4 V | 370 pF @ 10 V | - | - | - | 115mOhm @ 1.5A, 4.5V | - | Surface Mount | SC-95-6, Mini Mold Thin | SC-95-6 |
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Infineon Technologies |
TRENCH >=100V
|
Paket: - |
Lager11.970 |
|
MOSFET (Metal Oxide) | 150 V | 8.9A (Ta), 55A (Tc) | 4.5V, 10V | 2.3V @ 60µA | 29 nC @ 10 V | 2000 pF @ 75 V | ±20V | - | 2.5W (Ta), 96W (Tc) | 15.2mOhm @ 29A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET P-CH 40V 80A TO263-3
|
Paket: - |
Lager5.988 |
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MOSFET (Metal Oxide) | 40 V | 80A (Tc) | 4.5V, 10V | 2.2V @ 120µA | 92 nC @ 10 V | 5430 pF @ 25 V | +5V, -16V | - | 75W (Tc) | 8.2mOhm @ 80A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |