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Transistoren - FETs, MOSFET - Einzeln

Aufzeichnungen 42.029
Page  865/1.401
Bild
Teilenummer
Hersteller
Beschreibung
Paket
Lager
Anzahl
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
FET Feature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
IPP057N06N3GHKSA1
Infineon Technologies

MOSFET N-CH 60V 80A TO220-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 58µA
  • Gate Charge (Qg) (Max) @ Vgs: 82nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 6600pF @ 30V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 115W (Tc)
  • Rds On (Max) @ Id, Vgs: 5.7 mOhm @ 80A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO-220-3
  • Package / Case: TO-220-3
Paket: TO-220-3
Lager6.672
MOSFET (Metal Oxide)
60V
80A (Tc)
10V
4V @ 58µA
82nC @ 10V
6600pF @ 30V
±20V
-
115W (Tc)
5.7 mOhm @ 80A, 10V
-55°C ~ 175°C (TJ)
Through Hole
PG-TO-220-3
TO-220-3
IPI04N03LA
Infineon Technologies

MOSFET N-CH 25V 80A TO-262

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 25V
  • Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 60µA
  • Gate Charge (Qg) (Max) @ Vgs: 32nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 3877pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 107W (Tc)
  • Rds On (Max) @ Id, Vgs: 4.2 mOhm @ 55A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO262-3
  • Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
Paket: TO-262-3 Long Leads, I2Pak, TO-262AA
Lager2.560
MOSFET (Metal Oxide)
25V
80A (Tc)
4.5V, 10V
2V @ 60µA
32nC @ 5V
3877pF @ 15V
±20V
-
107W (Tc)
4.2 mOhm @ 55A, 10V
-55°C ~ 175°C (TJ)
Through Hole
PG-TO262-3
TO-262-3 Long Leads, I2Pak, TO-262AA
AOC2401
Alpha & Omega Semiconductor Inc.

MOSFET P-CH 30V 3A 4WLCSP

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
  • Vgs(th) (Max) @ Id: 1.3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1327pF @ 15V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 550mW (Ta)
  • Rds On (Max) @ Id, Vgs: 41 mOhm @ 1.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 4-AlphaDFN (1.57x1.57)
  • Package / Case: 4-SMD, No Lead
Paket: 4-SMD, No Lead
Lager3.312
MOSFET (Metal Oxide)
30V
3A (Ta)
2.5V, 10V
1.3V @ 250µA
40nC @ 10V
1327pF @ 15V
±12V
-
550mW (Ta)
41 mOhm @ 1.5A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
4-AlphaDFN (1.57x1.57)
4-SMD, No Lead
hot SI6433BDQ-T1-E3
Vishay Siliconix

MOSFET P-CH 12V 4A 8-TSSOP

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 12V
  • Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 1.05W (Ta)
  • Rds On (Max) @ Id, Vgs: 40 mOhm @ 4.8A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-TSSOP
  • Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Paket: 8-TSSOP (0.173", 4.40mm Width)
Lager124.956
MOSFET (Metal Oxide)
12V
4A (Ta)
2.5V, 4.5V
1.5V @ 250µA
15nC @ 4.5V
-
±8V
-
1.05W (Ta)
40 mOhm @ 4.8A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
8-TSSOP
8-TSSOP (0.173", 4.40mm Width)
BUK7508-55A,127
Nexperia USA Inc.

MOSFET N-CH 55V 75A TO220AB

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 55V
  • Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 76nC @ 0V
  • Input Capacitance (Ciss) (Max) @ Vds: 4352pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 254W (Tc)
  • Rds On (Max) @ Id, Vgs: 8 mOhm @ 25A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
Paket: TO-220-3
Lager7.024
MOSFET (Metal Oxide)
55V
75A (Tc)
10V
4V @ 1mA
76nC @ 0V
4352pF @ 25V
±20V
-
254W (Tc)
8 mOhm @ 25A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-220AB
TO-220-3
IXFK120N30P3
IXYS

MOSFET N-CH 300V 120A TO-264

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 300V
  • Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 4mA
  • Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 8630pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1130W (Tc)
  • Rds On (Max) @ Id, Vgs: 27 mOhm @ 60A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-264AA (IXFK)
  • Package / Case: TO-264-3, TO-264AA
Paket: TO-264-3, TO-264AA
Lager6.048
MOSFET (Metal Oxide)
300V
120A (Tc)
10V
5V @ 4mA
150nC @ 10V
8630pF @ 25V
±20V
-
1130W (Tc)
27 mOhm @ 60A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-264AA (IXFK)
TO-264-3, TO-264AA
STU16N65M5
STMicroelectronics

MOSFET N-CH 650V 12A IPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650V
  • Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1250pF @ 100V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 90W (Tc)
  • Rds On (Max) @ Id, Vgs: 299 mOhm @ 6A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: I-Pak
  • Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Paket: TO-251-3 Short Leads, IPak, TO-251AA
Lager5.584
MOSFET (Metal Oxide)
650V
12A (Tc)
10V
5V @ 250µA
45nC @ 10V
1250pF @ 100V
±25V
-
90W (Tc)
299 mOhm @ 6A, 10V
150°C (TJ)
Through Hole
I-Pak
TO-251-3 Short Leads, IPak, TO-251AA
STB10N65K3
STMicroelectronics

MOSFET N-CH 650V 10A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650V
  • Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1180pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 150W (Tc)
  • Rds On (Max) @ Id, Vgs: 1 Ohm @ 3.6A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Paket: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Lager6.048
MOSFET (Metal Oxide)
650V
10A (Tc)
10V
4.5V @ 100µA
42nC @ 10V
1180pF @ 25V
±30V
-
150W (Tc)
1 Ohm @ 3.6A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
D2PAK
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
hot SI7635DP-T1-GE3
Vishay Siliconix

MOSFET P-CH 20V 40A PPAK SO-8

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 143nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 4595pF @ 10V
  • Vgs (Max): ±16V
  • FET Feature: -
  • Power Dissipation (Max): 5W (Ta), 54W (Tc)
  • Rds On (Max) @ Id, Vgs: 4.9 mOhm @ 26A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK? SO-8
  • Package / Case: PowerPAK? SO-8
Paket: PowerPAK? SO-8
Lager108.000
MOSFET (Metal Oxide)
20V
40A (Tc)
4.5V, 10V
2.2V @ 250µA
143nC @ 10V
4595pF @ 10V
±16V
-
5W (Ta), 54W (Tc)
4.9 mOhm @ 26A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK? SO-8
PowerPAK? SO-8
STF33N60DM2
STMicroelectronics

N-CHANNEL 600 V, 0.105 OHM TYP.,

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650V
  • Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 43nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1870pF @ 100V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 35W (Tc)
  • Rds On (Max) @ Id, Vgs: 130 mOhm @ 12A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220FP
  • Package / Case: TO-220-3 Full Pack
Paket: TO-220-3 Full Pack
Lager19.200
MOSFET (Metal Oxide)
650V
24A (Tc)
10V
5V @ 250µA
43nC @ 10V
1870pF @ 100V
±25V
-
35W (Tc)
130 mOhm @ 12A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220FP
TO-220-3 Full Pack
hot STW30N65M5
STMicroelectronics

MOSFET N-CH 650V 22A TO-247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650V
  • Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 64nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2880pF @ 100V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 140W (Tc)
  • Rds On (Max) @ Id, Vgs: 139 mOhm @ 11A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247-3
  • Package / Case: TO-247-3
Paket: TO-247-3
Lager4.208
MOSFET (Metal Oxide)
650V
22A (Tc)
10V
5V @ 250µA
64nC @ 10V
2880pF @ 100V
±25V
-
140W (Tc)
139 mOhm @ 11A, 10V
150°C (TJ)
Through Hole
TO-247-3
TO-247-3
hot FQP4P40
Fairchild/ON Semiconductor

MOSFET P-CH 400V 3.5A TO-220

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 400V
  • Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 680pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 85W (Tc)
  • Rds On (Max) @ Id, Vgs: 3.1 Ohm @ 1.75A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
Paket: TO-220-3
Lager72.300
MOSFET (Metal Oxide)
400V
3.5A (Tc)
10V
5V @ 250µA
23nC @ 10V
680pF @ 25V
±30V
-
85W (Tc)
3.1 Ohm @ 1.75A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220AB
TO-220-3
BUK6215-75C,118
Nexperia USA Inc.

MOSFET N-CH 75V 57A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 75V
  • Current - Continuous Drain (Id) @ 25°C: 57A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 2.8V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 61.8nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3900pF @ 25V
  • Vgs (Max): ±16V
  • FET Feature: -
  • Power Dissipation (Max): 128W (Tc)
  • Rds On (Max) @ Id, Vgs: 15 mOhm @ 15A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DPAK
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Paket: TO-252-3, DPak (2 Leads + Tab), SC-63
Lager51.090
MOSFET (Metal Oxide)
75V
57A (Tc)
10V
2.8V @ 1mA
61.8nC @ 10V
3900pF @ 25V
±16V
-
128W (Tc)
15 mOhm @ 15A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
DPAK
TO-252-3, DPak (2 Leads + Tab), SC-63
FQD19N10LTM
Fairchild/ON Semiconductor

MOSFET N-CH 100V 15.6A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 15.6A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 18nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 870pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
  • Rds On (Max) @ Id, Vgs: 100 mOhm @ 7.8A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D-Pak
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Paket: TO-252-3, DPak (2 Leads + Tab), SC-63
Lager20.832
MOSFET (Metal Oxide)
100V
15.6A (Tc)
5V, 10V
2V @ 250µA
18nC @ 5V
870pF @ 25V
±20V
-
2.5W (Ta), 50W (Tc)
100 mOhm @ 7.8A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
D-Pak
TO-252-3, DPak (2 Leads + Tab), SC-63
IPD35N10S3L26ATMA2
Infineon Technologies

MOSFET_(75V 120V(

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.4V @ 39µA
  • Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 71W (Tc)
  • Rds On (Max) @ Id, Vgs: 24mOhm @ 35A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO252-3-11
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
Paket: -
Request a Quote
MOSFET (Metal Oxide)
100 V
35A (Tc)
4.5V, 10V
2.4V @ 39µA
39 nC @ 10 V
2700 pF @ 25 V
±20V
-
71W (Tc)
24mOhm @ 35A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
PG-TO252-3-11
TO-252-3, DPAK (2 Leads + Tab), SC-63
XP65AN1K2IT
YAGEO XSEMI

MOSFET N-CH 650V 7A TO220CFM

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 44.8 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2048 pF @ 100 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 1.92W (Ta), 34.7W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.2Ohm @ 3.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220CFM
  • Package / Case: TO-220-3 Full Pack
Paket: -
Lager3.000
MOSFET (Metal Oxide)
650 V
7A (Tc)
10V
4V @ 250µA
44.8 nC @ 10 V
2048 pF @ 100 V
±30V
-
1.92W (Ta), 34.7W (Tc)
1.2Ohm @ 3.5A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220CFM
TO-220-3 Full Pack
MSJPF06N80A-BP
Micro Commercial Co

MOSFET

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 800 V
  • Current - Continuous Drain (Id) @ 25°C: 6A
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 349 pF @ 100 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 22W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220F
  • Package / Case: TO-220-3 Full Pack
Paket: -
Request a Quote
MOSFET (Metal Oxide)
800 V
6A
10V
4.5V @ 250µA
11 nC @ 10 V
349 pF @ 100 V
±30V
-
22W (Tc)
1.2Ohm @ 2.5A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220F
TO-220-3 Full Pack
APT6021BLLG
Microchip Technology

MOSFET N-CH 600V 29A TO247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 3470 pF @ 25 V
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 210mOhm @ 14.5A, 10V
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247 [B]
  • Package / Case: TO-247-3
Paket: -
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MOSFET (Metal Oxide)
600 V
29A (Tc)
-
5V @ 1mA
80 nC @ 10 V
3470 pF @ 25 V
-
-
-
210mOhm @ 14.5A, 10V
-
Through Hole
TO-247 [B]
TO-247-3
CEH2315-HF
Comchip Technology

MOSFET P-CH 30V 5A 6TSOP

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 11.2 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 15 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2W
  • Rds On (Max) @ Id, Vgs: 50mOhm @ 3.8A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 6-TSOP
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
Paket: -
Request a Quote
MOSFET (Metal Oxide)
30 V
5A (Ta)
4.5V, 10V
3V @ 250µA
11.2 nC @ 10 V
650 pF @ 15 V
±20V
-
2W
50mOhm @ 3.8A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
6-TSOP
SOT-23-6 Thin, TSOT-23-6
SIHA22N60AE-GE3
Vishay Siliconix

N-CHANNEL 600V

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1451 pF @ 100 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 33W (Tc)
  • Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220 Full Pack
  • Package / Case: TO-220-3 Full Pack
Paket: -
Lager2.937
MOSFET (Metal Oxide)
600 V
8A (Tc)
10V
4V @ 250µA
96 nC @ 10 V
1451 pF @ 100 V
±30V
-
33W (Tc)
180mOhm @ 11A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220 Full Pack
TO-220-3 Full Pack
2SK1620L-E
Renesas Electronics Corporation

N-CHANNEL POWER MOSFET

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
Paket: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
94-2300PBF
Infineon Technologies

IC MOSFET

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
Paket: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
IXTY1R4N120P-TRL
IXYS

MOSFET N-CH 1200V 1.4A TO252

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 1200 V
  • Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 24.8 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 666 pF @ 25 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 86W (Tc)
  • Rds On (Max) @ Id, Vgs: 13Ohm @ 700mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252AA
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
Paket: -
Request a Quote
MOSFET (Metal Oxide)
1200 V
1.4A (Tc)
10V
4.5V @ 100µA
24.8 nC @ 10 V
666 pF @ 25 V
±30V
-
86W (Tc)
13Ohm @ 700mA, 10V
-55°C ~ 150°C (TJ)
Surface Mount
TO-252AA
TO-252-3, DPAK (2 Leads + Tab), SC-63
DMN6040SFDEQ-13
Diodes Incorporated

MOSFET N-CH 60V 5.3A 6UDFN

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 5.3A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 22.4 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1287 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 660mW (Ta)
  • Rds On (Max) @ Id, Vgs: 38mOhm @ 4.3A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: U-DFN2020-6 (Type E)
  • Package / Case: 6-PowerUDFN
Paket: -
Request a Quote
MOSFET (Metal Oxide)
60 V
5.3A (Ta)
4.5V, 10V
3V @ 250µA
22.4 nC @ 10 V
1287 pF @ 25 V
±20V
-
660mW (Ta)
38mOhm @ 4.3A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
U-DFN2020-6 (Type E)
6-PowerUDFN
IMZA65R083M1HXKSA1
Infineon Technologies

SILICON CARBIDE MOSFET, PG-TO247

  • FET Type: N-Channel
  • Technology: SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 18V
  • Vgs(th) (Max) @ Id: 5.7V @ 3.3mA
  • Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 18 V
  • Input Capacitance (Ciss) (Max) @ Vds: 624 pF @ 400 V
  • Vgs (Max): +20V, -2V
  • FET Feature: -
  • Power Dissipation (Max): 104W (Tc)
  • Rds On (Max) @ Id, Vgs: 111mOhm @ 11.2A, 18V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO247-4-3
  • Package / Case: TO-247-4
Paket: -
Lager96
SiCFET (Silicon Carbide)
650 V
26A (Tc)
18V
5.7V @ 3.3mA
19 nC @ 18 V
624 pF @ 400 V
+20V, -2V
-
104W (Tc)
111mOhm @ 11.2A, 18V
-55°C ~ 175°C (TJ)
Through Hole
PG-TO247-4-3
TO-247-4
MTB52N06VL
onsemi

N-CHANNEL POWER MOSFET

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
Paket: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
R6004END4TL1
Rohm Semiconductor

600V 2.4A SOT-223-3, LOW-NOISE P

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 2.4A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 9.1W (Tc)
  • Rds On (Max) @ Id, Vgs: 980mOhm @ 1.5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-223-3
  • Package / Case: TO-261-3
Paket: -
Lager11.988
MOSFET (Metal Oxide)
600 V
2.4A (Tc)
10V
4V @ 1mA
15 nC @ 10 V
250 pF @ 25 V
±20V
-
9.1W (Tc)
980mOhm @ 1.5A, 10V
150°C (TJ)
Surface Mount
SOT-223-3
TO-261-3
PJA3404-AU_R1_000A1
Panjit International Inc.

SOT-23, MOSFET

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 5.6A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 7.8 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 343 pF @ 15 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.25W (Ta)
  • Rds On (Max) @ Id, Vgs: 30mOhm @ 5.6A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23
  • Package / Case: TO-236-3, SC-59, SOT-23-3
Paket: -
Lager9.162
MOSFET (Metal Oxide)
30 V
5.6A (Ta)
4.5V, 10V
2.1V @ 250µA
7.8 nC @ 10 V
343 pF @ 15 V
±20V
-
1.25W (Ta)
30mOhm @ 5.6A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23
TO-236-3, SC-59, SOT-23-3
PCFC040N65S3W
onsemi

MOSFET N-CH 650V 75A

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
Paket: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
APT5014BFLLG
Microchip Technology

MOSFET N-CH 500V 35A TO247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500 V
  • Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 3261 pF @ 25 V
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 140mOhm @ 17.5A, 10V
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247 [B]
  • Package / Case: TO-247-3
Paket: -
Request a Quote
MOSFET (Metal Oxide)
500 V
35A (Tc)
-
5V @ 1mA
72 nC @ 10 V
3261 pF @ 25 V
-
-
-
140mOhm @ 17.5A, 10V
-
Through Hole
TO-247 [B]
TO-247-3