Bild |
Teilenummer |
Hersteller |
Beschreibung |
Paket |
Lager |
Anzahl |
Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Speed | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Capacitance @ Vr, F | Mounting Type | Package / Case | Supplier Device Package | Operating Temperature - Junction |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Microsemi Corporation |
DIODE GEN PURP 1KV 250MA AXIAL
|
Paket: S, Axial |
Lager5.696 |
|
1000V | 250mA | 5V @ 250mA | Standard Recovery >500ns, > 200mA (Io) | - | 100µA @ 1000V | - | Through Hole | S, Axial | S, Axial | -65°C ~ 175°C |
||
Microsemi Corporation |
DIODE GEN PURP 125V 150MA
|
Paket: DO-213AA |
Lager6.736 |
|
125V | 150mA | 920mV @ 100mA | Small Signal =< 200mA (Io), Any Speed | 3µs | 2nA @ 125V | - | Surface Mount | DO-213AA | DO-213AA | -65°C ~ 175°C |
||
Microsemi Corporation |
DIODE GEN PURP 1.1KV 1.4A A-MELF
|
Paket: SQ-MELF, A |
Lager5.696 |
|
1100V | 1.4A | 1.4V @ 1.4A | Fast Recovery =< 500ns, > 200mA (Io) | 60ns | 4µA @ 1100V | 40pF @ 10V, 1MHz | Surface Mount | SQ-MELF, A | A-MELF | -65°C ~ 150°C |
||
Microsemi Corporation |
DIODE GEN PURP 900V 1.4A D5B
|
Paket: E-MELF |
Lager7.808 |
|
900V | 1.4A | 1.7V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 4µA @ 100V | - | Surface Mount | E-MELF | D-5B | -65°C ~ 150°C |
||
Microsemi Corporation |
DIODE GP 1.75KV 250MA AXIAL
|
Paket: S, Axial |
Lager4.976 |
|
1750V | 250mA | 5V @ 250mA | Standard Recovery >500ns, > 200mA (Io) | - | 100µA @ 1750V | - | Through Hole | S, Axial | S, Axial | -65°C ~ 175°C |
||
Microsemi Corporation |
DIODE GEN PURP 1.1KV 1A D5A
|
Paket: SQ-MELF, A |
Lager4.368 |
|
1100V | 1A | 1.75V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 60ns | 1µA @ 1100V | 10pF @ 10V, 1MHz | Surface Mount | SQ-MELF, A | D-5A | -65°C ~ 150°C |
||
Microsemi Corporation |
DIODE GEN PURP 990V 1A D5A
|
Paket: SQ-MELF, A |
Lager3.744 |
|
990V | 1A | 1.55V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 500nA @ 990V | 10pF @ 10V, 1MHz | Surface Mount | SQ-MELF, A | D-5A | -65°C ~ 150°C |
||
Microsemi Corporation |
DIODE GEN PURP 880V 1A D5A
|
Paket: SQ-MELF, A |
Lager6.128 |
|
880V | 1A | 1.55V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 500nA @ 880V | 10pF @ 10V, 1MHz | Surface Mount | SQ-MELF, A | D-5A | -65°C ~ 150°C |
||
Microsemi Corporation |
DIODE GEN PURP 440V 2A D5A
|
Paket: SQ-MELF, A |
Lager3.008 |
|
75V | 200mA | 1.2V @ 100mA | Small Signal =< 200mA (Io), Any Speed | 20ns | 500nA @ 75V | 2.8pF @ 1.5V, 1MHz | Surface Mount | SQ-MELF, A | D-5A | -65°C ~ 200°C |
||
Microsemi Corporation |
DIODE GEN PURP 150V 3A D5A
|
Paket: SQ-MELF, A |
Lager6.224 |
|
150V | 3A | 2.04V @ 9.4A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 1µA @ 150V | - | Surface Mount | SQ-MELF, A | D-5A | -65°C ~ 155°C |
||
Microsemi Corporation |
DIODE GEN PURP 100V 3A D5A
|
Paket: SQ-MELF, A |
Lager2.656 |
|
100V | 3A | 2.04V @ 9.4A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 1µA @ 100V | - | Surface Mount | SQ-MELF, A | D-5A | -65°C ~ 155°C |
||
Microsemi Corporation |
DIODE GEN PURP 50V 3A D5A
|
Paket: SQ-MELF, A |
Lager2.256 |
|
50V | 3A | 2.04V @ 9.4A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 1µA @ 50V | - | Surface Mount | SQ-MELF, A | D-5A | -65°C ~ 155°C |
||
Microsemi Corporation |
DIODE GEN PURP 1KV 15A DO203AA
|
Paket: DO-203AA, DO-4, Stud |
Lager7.616 |
|
1000V | 15A | 1.5V @ 15A | Standard Recovery >500ns, > 200mA (Io) | - | 50µA @ 1000V | - | Chassis, Stud Mount | DO-203AA, DO-4, Stud | DO-203AA | -65°C ~ 175°C |
||
Microsemi Corporation |
DIODE GEN PURP 50V 300MA D-MELF
|
Paket: SQ-MELF, D |
Lager3.120 |
|
50V | 300mA | 1.1V @ 200mA | Fast Recovery =< 500ns, > 200mA (Io) | 5ns | 100nA @ 50V | - | Surface Mount | SQ-MELF, D | D-5D | -65°C ~ 175°C |
||
Microsemi Corporation |
DIODE GEN PURP 220V 1.75A A-MELF
|
Paket: SQ-MELF, A |
Lager7.680 |
|
220V | 1.75A | 1.35V @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 2µA @ 220V | 40pF @ 10V, 1MHz | Surface Mount | SQ-MELF, A | A-MELF | -65°C ~ 150°C |
||
Microsemi Corporation |
DIODE GEN PURP 1KV 1A AXIAL
|
Paket: A, Axial |
Lager7.328 |
|
1000V | 1A | 1.6V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 500ns | 500nA @ 1000V | 15pF @ 12V, 1MHz | Through Hole | A, Axial | - | -65°C ~ 175°C |
||
Microsemi Corporation |
DIODE GEN PURP 150V 1A D5A
|
Paket: SQ-MELF, A |
Lager5.104 |
|
150V | 1A | 875mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 1µA @ 150V | 25pF @ 10V, 1MHz | Surface Mount | SQ-MELF, A | D-5A | -65°C ~ 175°C |
||
Microsemi Corporation |
DIODE RECT ULT FAST REC A-PKG
|
Paket: - |
Lager3.456 |
|
- | - | - | - | - | - | - | - | - | - | - |
||
Microsemi Corporation |
DIODE GEN PURP 900V 1.4A AXIAL
|
Paket: E, Axial |
Lager3.616 |
|
900V | 1.4A | 1.4V @ 1.4A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 2µA @ 900V | - | Through Hole | E, Axial | - | -65°C ~ 150°C |
||
Microsemi Corporation |
DIODE GEN PURP 1KV 1A D5A
|
Paket: SQ-MELF, A |
Lager3.200 |
|
1000V | 1A | 1.6V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 500ns | 500nA @ 1000V | 15pF @ 12V, 1MHz | Surface Mount | SQ-MELF, A | D-5A | -65°C ~ 175°C |
||
Microsemi Corporation |
DIODE GEN PURP 1KV 5A D5B
|
Paket: SQ-MELF, B |
Lager7.744 |
|
1000V | 5A | 1.3V @ 9A | Fast Recovery =< 500ns, > 200mA (Io) | 2µs | 1µA @ 1000V | - | Surface Mount | SQ-MELF, B | D-5B | -65°C ~ 175°C |
||
Microsemi Corporation |
DIODE RECT ULT FAST REC A-PKG
|
Paket: - |
Lager7.920 |
|
- | - | - | - | - | - | - | - | - | - | - |
||
Microsemi Corporation |
DIODE GEN PURP 150V 1A AXIAL
|
Paket: A, Axial |
Lager3.712 |
|
150V | 1A | 875mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 1µA @ 150V | 25pF @ 10V, 1MHz | Through Hole | A, Axial | - | -65°C ~ 175°C |
||
Microsemi Corporation |
DIODE GEN PURP 400V 3A AXIAL
|
Paket: B, Axial |
Lager3.328 |
|
400V | 3A | 1.5V @ 9A | Fast Recovery =< 500ns, > 200mA (Io) | 250ns | 2µA @ 400V | - | Through Hole | B, Axial | - | -65°C ~ 175°C |
||
Microsemi Corporation |
DIODE GEN PURP 75V 300MA D5B
|
Paket: SQ-MELF, B |
Lager4.128 |
|
75V | 300mA | 1.2V @ 100mA | Fast Recovery =< 500ns, > 200mA (Io) | 20ns | 500nA @ 75V | 5pF @ 0V, 1MHz | Surface Mount | SQ-MELF, B | D-5B | -65°C ~ 175°C |
||
Microsemi Corporation |
DIODE GEN PURP 100V 1A D5A
|
Paket: SQ-MELF, A |
Lager7.072 |
|
100V | 1A | 875mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 1µA @ 100V | 25pF @ 10V, 1MHz | Surface Mount | SQ-MELF, A | D-5A | -65°C ~ 175°C |
||
Microsemi Corporation |
DIODE GEN PURP 50V 1A D5A
|
Paket: SQ-MELF, A |
Lager5.024 |
|
50V | 1A | 875mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 1µA @ 50V | 25pF @ 10V, 1MHz | Surface Mount | SQ-MELF, A | D-5A | -65°C ~ 175°C |
||
Microsemi Corporation |
DIODE GEN PURP 100V 3A AXIAL
|
Paket: B, Axial |
Lager6.288 |
|
100V | 3A | 875mV @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 5µA @ 100V | 60pF @ 10V, 1MHz | Through Hole | B, Axial | - | -65°C ~ 175°C |