Bild |
Teilenummer |
Hersteller |
Beschreibung |
Paket |
Lager |
Anzahl |
Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Speed | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Capacitance @ Vr, F | Mounting Type | Package / Case | Supplier Device Package | Operating Temperature - Junction |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Microsemi Corporation |
DIODE GEN PURP 50V 1.3A AXIAL
|
Paket: A, Axial |
Lager3.648 |
|
50V | 1.3A | 1.76V @ 18.8A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 5µA @ 50V | - | Through Hole | A, Axial | - | -65°C ~ 155°C |
||
Microsemi Corporation |
DIODE GEN PURP 1KV 1A D5A
|
Paket: SQ-MELF, A |
Lager4.768 |
|
1000V | 1A | 1.3V @ 3A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 500nA @ 1000V | - | Surface Mount | SQ-MELF, A | D-5A | -65°C ~ 200°C |
||
Microsemi Corporation |
DIODE GEN PURP 100V 3A D5B
|
Paket: SQ-MELF, B |
Lager2.416 |
|
100V | 3A | 1.5V @ 9A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 1µA @ 100V | - | Surface Mount | SQ-MELF, B | D-5B | -65°C ~ 175°C |
||
Microsemi Corporation |
DIODE GEN PURP 600V 5A B-MELF
|
Paket: SQ-MELF, B |
Lager2.656 |
|
600V | 5A | 1.2V @ 9A | Fast Recovery =< 500ns, > 200mA (Io) | 2µs | 1µA @ 600V | - | Surface Mount | SQ-MELF, B | B, SQ-MELF | -65°C ~ 175°C |
||
Microsemi Corporation |
DIODE GEN PURP 200V 5A B-MELF
|
Paket: SQ-MELF, B |
Lager7.888 |
|
200V | 5A | 1.2V @ 9A | Fast Recovery =< 500ns, > 200mA (Io) | 2µs | 1µA @ 200V | - | Surface Mount | SQ-MELF, B | B, SQ-MELF | -65°C ~ 175°C |
||
Microsemi Corporation |
DIODE RECT ULT FAST REC A-PKG
|
Paket: - |
Lager3.616 |
|
- | - | - | - | - | - | - | - | - | - | - |
||
Microsemi Corporation |
DIODE GEN PURP 50V 850MA AXIAL
|
Paket: A, Axial |
Lager6.112 |
|
50V | 850mA | 2.04V @ 9.4A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 1µA @ 50V | - | Through Hole | A, Axial | A-PAK | -65°C ~ 155°C |
||
Microsemi Corporation |
DIODE GEN PURP 600V 3A AXIAL
|
Paket: B, Axial |
Lager2.944 |
|
600V | 3A | 1.5V @ 9A | Standard Recovery >500ns, > 200mA (Io) | - | 2µA @ 600V | - | Through Hole | B, Axial | Axial | -65°C ~ 175°C |
||
Microsemi Corporation |
DIODE GEN PURP 400V 1A A-MELF
|
Paket: SQ-MELF, A |
Lager3.840 |
|
400V | 1A | 1.6V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 500nA @ 400V | - | Surface Mount | SQ-MELF, A | D-5A | -65°C ~ 175°C |
||
Microsemi Corporation |
DIODE FAST REC 200V 1A D-5A
|
Paket: SQ-MELF, A |
Lager3.536 |
|
200V | 1A | 1.6V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 500nA @ 600V | 45pF @ 12V, 1MHz | Surface Mount | SQ-MELF, A | D-5A | -65°C ~ 175°C |
||
Microsemi Corporation |
DIODE GEN PURP 800V 3A B-MELF
|
Paket: SQ-MELF, B |
Lager5.904 |
|
800V | 3A | 1.3V @ 9A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 1µA @ 800V | - | Surface Mount | SQ-MELF, B | D-5B | -65°C ~ 175°C |
||
Microsemi Corporation |
DIODE GEN PURP 600V 3A D5B
|
Paket: SQ-MELF, B |
Lager6.288 |
|
600V | 3A | 1.5V @ 9A | Fast Recovery =< 500ns, > 200mA (Io) | 400ns | 1µA @ 600V | - | Surface Mount | SQ-MELF, B | D-5B | -65°C ~ 175°C |
||
Microsemi Corporation |
DIODE GEN PURP 400V 3A D5B
|
Paket: SQ-MELF, B |
Lager6.816 |
|
400V | 3A | 1.5V @ 9A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 2µA @ 400V | - | Surface Mount | SQ-MELF, B | D-5B | -65°C ~ 175°C |
||
Microsemi Corporation |
DIODE GEN PURP 1KV 15A DO203AA
|
Paket: DO-203AA, DO-4, Stud |
Lager3.968 |
|
1000V | 15A | 1.5V @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | - | 50µA @ 1000V | - | Chassis, Stud Mount | DO-203AA, DO-4, Stud | DO-203AA (DO-4) | -65°C ~ 175°C |
||
Microsemi Corporation |
DIODE GEN PURP 800V 15A DO203AA
|
Paket: DO-203AA, DO-4, Stud |
Lager2.560 |
|
800V | 15A | 1.5V @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | - | 50µA @ 800V | - | Chassis, Stud Mount | DO-203AA, DO-4, Stud | DO-203AA (DO-4) | -65°C ~ 175°C |
||
Microsemi Corporation |
DIODE GEN PURP 100V 300MA D5B
|
Paket: SQ-MELF, B |
Lager7.744 |
|
100V | 300mA | 1.2V @ 100mA | Fast Recovery =< 500ns, > 200mA (Io) | 20ns | 500nA @ 100V | - | Surface Mount | SQ-MELF, B | D-5B | -65°C ~ 175°C |
||
Microsemi Corporation |
DIODE GEN PURP 100V 300MA D5D
|
Paket: SQ-MELF, D |
Lager7.168 |
|
100V | 300mA | 1.2V @ 100mA | Fast Recovery =< 500ns, > 200mA (Io) | 20ns | 500nA @ 100V | - | Surface Mount | SQ-MELF, D | D-5D | -65°C ~ 175°C |
||
Microsemi Corporation |
DIODE GEN PURP 200V 3A D5B
|
Paket: SQ-MELF, B |
Lager7.664 |
|
200V | 3A | 1.5V @ 9A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 1µA @ 200V | - | Surface Mount | SQ-MELF, B | D-5B | -65°C ~ 175°C |
||
Microsemi Corporation |
DIODE GEN PURP 800V 15A DO203AA
|
Paket: DO-203AA, DO-4, Stud |
Lager3.088 |
|
800V | 15A | 1.5V @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | - | 50µA @ 800V | - | Chassis, Stud Mount | DO-203AA, DO-4, Stud | DO-203AA (DO-4) | -65°C ~ 175°C |
||
Microsemi Corporation |
DIODE GEN PURP 400V 3A AXIAL
|
Paket: B, Axial |
Lager2.928 |
|
400V | 3A | 1.5V @ 9A | Standard Recovery >500ns, > 200mA (Io) | - | 2µA @ 400V | - | Through Hole | B, Axial | Axial | -65°C ~ 175°C |
||
Microsemi Corporation |
DIODE GEN PURP 150V 3A B-MELF
|
Paket: SQ-MELF, B |
Lager4.176 |
|
150V | 3A | 875mV @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 5µA @ 150V | 60pF @ 10V, 1MHz | Surface Mount | SQ-MELF, B | B, SQ-MELF | -65°C ~ 175°C |
||
Microsemi Corporation |
DIODE GEN PURP 600V 1A D5A
|
Paket: SQ-MELF, A |
Lager3.216 |
|
600V | 1A | 1.6V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 250ns | 500nA @ 600V | 25pF @ 12V, 1MHz | Surface Mount | SQ-MELF, A | D-5A | -65°C ~ 175°C |
||
Microsemi Corporation |
DIODE GEN PURP 600V 3A AXIAL
|
Paket: B, Axial |
Lager9.600 |
|
600V | 3A | 1.5V @ 9A | Fast Recovery =< 500ns, > 200mA (Io) | 400ns | 1µA @ 600V | - | Through Hole | B, Axial | - | -65°C ~ 175°C |
||
Microsemi Corporation |
DIODE RECT ULT FAST REC A-PKG
|
Paket: - |
Lager3.392 |
|
- | - | - | - | - | - | - | - | - | - | - |
||
Microsemi Corporation |
DIODE GEN PURP 50V 850MA AXIAL
|
Paket: A, Axial |
Lager2.320 |
|
50V | 850mA | 2.04V @ 9.4A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 1µA @ 50V | - | Through Hole | A, Axial | A-PAK | -65°C ~ 155°C |
||
Microsemi Corporation |
DIODE GEN PURP 150V 3A AXIAL
|
Paket: A, Axial |
Lager5.872 |
|
150V | 3A | 2.04V @ 9.4A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 1µA @ 150V | - | Through Hole | A, Axial | A-PAK | -65°C ~ 155°C |
||
Microsemi Corporation |
DIODE GEN PURP 100V 3A AXIAL
|
Paket: A, Axial |
Lager2.400 |
|
100V | 3A | 2.04V @ 9.4A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 1µA @ 100V | - | Through Hole | A, Axial | A-PAK | -65°C ~ 155°C |
||
Microsemi Corporation |
DIODE GEN PURP 1.4KV 250MA AXIAL
|
Paket: S, Axial |
Lager2.320 |
|
1400V | 250mA | 5V @ 250mA | Standard Recovery >500ns, > 200mA (Io) | - | 100µA @ 1400V | - | Through Hole | S, Axial | S, Axial | -65°C ~ 175°C |