Microsemi Corporation Produkte - Dioden - Gleichrichter - Einzeln

JANTXV1N6076

Microsemi Corporation

DIODE GEN PURP 50V 1.3A AXIAL

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 50V
• Current - Average Rectified (Io): 1.3A
• Voltage - Forward (Vf) (Max) @ If: 1.76V @ 18.8A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 30ns
• Current - Reverse Leakage @ Vr: 1µA @ 50V
• Capacitance @ Vr, F: -
• Mounting Type: Through Hole
• Package / Case: E, Axial
• Supplier Device Package: E-PAK
• Operating Temperature - Junction: -65°C ~ 155°C

Paket: E, Axial

JANTXV1N5419US

Microsemi Corporation

DIODE GEN PURP 500V 3A B-MELF

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 500V
• Current - Average Rectified (Io): 3A
• Voltage - Forward (Vf) (Max) @ If: 1.5V @ 9A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 250ns
• Current - Reverse Leakage @ Vr: 1µA @ 500V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: SQ-MELF, B
• Supplier Device Package: D-5B
• Operating Temperature - Junction: -65°C ~ 175°C

Paket: SQ-MELF, B

JAN1N4148UB

Microsemi Corporation

DIODE GEN PURP 75V 200MA UB

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 75V
• Current - Average Rectified (Io): 200mA
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 100mA
• Speed: Small Signal =< 200mA (Io), Any Speed
• Reverse Recovery Time (trr): 5ns
• Current - Reverse Leakage @ Vr: 75µA @ 75V
• Capacitance @ Vr, F: 4pF @ 0V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: 3-SMD, No Lead
• Supplier Device Package: UB
• Operating Temperature - Junction: -65°C ~ 200°C

Paket: 3-SMD, No Lead

JANTX1N3647

Microsemi Corporation

DIODE GEN PURP 3KV 250MA AXIAL

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 3000V
• Current - Average Rectified (Io): 250mA
• Voltage - Forward (Vf) (Max) @ If: 5V @ 250mA
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 5µA @ 3000V
• Capacitance @ Vr, F: -
• Mounting Type: Through Hole
• Package / Case: S, Axial
• Supplier Device Package: S, Axial
• Operating Temperature - Junction: -65°C ~ 175°C

Paket: S, Axial

JANTX1N6627

Microsemi Corporation

DIODE GEN PURP 440V 1.75A AXIAL

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 440V
• Current - Average Rectified (Io): 1.75A
• Voltage - Forward (Vf) (Max) @ If: 1.35V @ 2A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 30ns
• Current - Reverse Leakage @ Vr: 2µA @ 440V
• Capacitance @ Vr, F: 40pF @ 10V, 1MHz
• Mounting Type: Through Hole
• Package / Case: E, Axial
• Supplier Device Package: -
• Operating Temperature - Junction: -65°C ~ 150°C

Paket: E, Axial

JANTX1N5806URS

Microsemi Corporation

DIODE GEN PURP 150V 1A APKG

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 150V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 875mV @ 1A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 25ns
• Current - Reverse Leakage @ Vr: 1µA @ 150V
• Capacitance @ Vr, F: 25pF @ 10V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: SQ-MELF, A
• Supplier Device Package: A-MELF
• Operating Temperature - Junction: -65°C ~ 175°C

Paket: SQ-MELF, A

JANTX1N5804URS

Microsemi Corporation

DIODE GEN PURP 100V 1A APKG

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 100V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 875mV @ 1A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 25ns
• Current - Reverse Leakage @ Vr: 1µA @ 100V
• Capacitance @ Vr, F: 25pF @ 10V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: SQ-MELF, A
• Supplier Device Package: A-MELF
• Operating Temperature - Junction: -65°C ~ 175°C

Paket: SQ-MELF, A

JANTX1N5802URS

Microsemi Corporation

DIODE GEN PURP 50V 1A APKG

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 50V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 875mV @ 1A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 25ns
• Current - Reverse Leakage @ Vr: 1µA @ 50V
• Capacitance @ Vr, F: 25pF @ 10V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: SQ-MELF, A
• Supplier Device Package: A-MELF
• Operating Temperature - Junction: -65°C ~ 175°C

Paket: SQ-MELF, A

JANTX1N3646

Microsemi Corporation

DIODE GP 1.75KV 250MA AXIAL

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 1750V
• Current - Average Rectified (Io): 250mA
• Voltage - Forward (Vf) (Max) @ If: 5V @ 250mA
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 5µA @ 1750V
• Capacitance @ Vr, F: -
• Mounting Type: Through Hole
• Package / Case: S, Axial
• Supplier Device Package: S, Axial
• Operating Temperature - Junction: -65°C ~ 175°C

Paket: S, Axial

1N1343B

Microsemi Corporation

DIODE RECT 150V 16A DO4

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 150V
• Current - Average Rectified (Io): 16A
• Voltage - Forward (Vf) (Max) @ If: 1.3V @ 30A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 10µA @ 150V
• Capacitance @ Vr, F: -
• Mounting Type: Stud Mount
• Package / Case: DO-203AA, DO-4, Stud
• Supplier Device Package: DO-203AA (DO-4)
• Operating Temperature - Junction: -65°C ~ 200°C

Paket: DO-203AA, DO-4, Stud

1N6078

Microsemi Corporation

DIODE GEN PURP 150V 1.3A AXIAL

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 150V
• Current - Average Rectified (Io): 1.3A
• Voltage - Forward (Vf) (Max) @ If: 1.76V @ 18.8A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 30ns
• Current - Reverse Leakage @ Vr: 5µA @ 150V
• Capacitance @ Vr, F: -
• Mounting Type: Through Hole
• Package / Case: A, Axial
• Supplier Device Package: -
• Operating Temperature - Junction: -65°C ~ 155°C

Paket: A, Axial

JANTX1N6076

Microsemi Corporation

DIODE GEN PURP 50V 1.3A AXIAL

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 50V
• Current - Average Rectified (Io): 1.3A
• Voltage - Forward (Vf) (Max) @ If: 1.76V @ 18.8A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 30ns
• Current - Reverse Leakage @ Vr: 5µA @ 50V
• Capacitance @ Vr, F: -
• Mounting Type: Through Hole
• Package / Case: A, Axial
• Supplier Device Package: A-PAK
• Operating Temperature - Junction: -65°C ~ 155°C

Paket: A, Axial

JANTXV1N6075

Microsemi Corporation

DIODE GEN PURP 150V 850MA AXIAL

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 150V
• Current - Average Rectified (Io): 850mA
• Voltage - Forward (Vf) (Max) @ If: 2.04V @ 9.4A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 30ns
• Current - Reverse Leakage @ Vr: 1µA @ 150V
• Capacitance @ Vr, F: -
• Mounting Type: Through Hole
• Package / Case: A, Axial
• Supplier Device Package: A-PAK
• Operating Temperature - Junction: -65°C ~ 155°C

Paket: A, Axial

JANTXV1N6074

Microsemi Corporation

DIODE GEN PURP 100V 850MA AXIAL

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 100V
• Current - Average Rectified (Io): 850mA
• Voltage - Forward (Vf) (Max) @ If: 2.04V @ 9.4A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 30ns
• Current - Reverse Leakage @ Vr: 1µA @ 100V
• Capacitance @ Vr, F: -
• Mounting Type: Through Hole
• Package / Case: A, Axial
• Supplier Device Package: A, Axial
• Operating Temperature - Junction: -65°C ~ 155°C

Paket: A, Axial

JANTX1N6077

Microsemi Corporation

DIODE GEN PURP 100V 1.3A AXIAL

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 100V
• Current - Average Rectified (Io): 1.3A
• Voltage - Forward (Vf) (Max) @ If: 1.76V @ 18.8A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 30ns
• Current - Reverse Leakage @ Vr: 5µA @ 100V
• Capacitance @ Vr, F: -
• Mounting Type: Through Hole
• Package / Case: A, Axial
• Supplier Device Package: A-PAK
• Operating Temperature - Junction: -65°C ~ 155°C

Paket: A, Axial

JAN1N6620US

Microsemi Corporation

DIODE GEN PURP 220V 2A D5A

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 220V
• Current - Average Rectified (Io): 2A
• Voltage - Forward (Vf) (Max) @ If: 1.6V @ 2A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 30ns
• Current - Reverse Leakage @ Vr: 500nA @ 220V
• Capacitance @ Vr, F: 10pF @ 10V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: SQ-MELF, A
• Supplier Device Package: D-5A
• Operating Temperature - Junction: -65°C ~ 150°C

Paket: SQ-MELF, A

JANTXV1N6624US

Microsemi Corporation

DIODE GEN PURP 900V 1A D5A

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 900V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 1.55V @ 1A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 60ns
• Current - Reverse Leakage @ Vr: 500nA @ 150V
• Capacitance @ Vr, F: 10pF @ 10V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: SQ-MELF, A
• Supplier Device Package: D-5A
• Operating Temperature - Junction: -65°C ~ 150°C

Paket: SQ-MELF, A

JAN1N6642UB

Microsemi Corporation

DIODE GEN PURP 75V 300MA UB

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 75V
• Current - Average Rectified (Io): 300mA
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 100mA
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 5ns
• Current - Reverse Leakage @ Vr: 500nA @ 75V
• Capacitance @ Vr, F: 5pF @ 0V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: 3-SMD, No Lead
• Supplier Device Package: 3-UB (3.09x2.45)
• Operating Temperature - Junction: -65°C ~ 175°C

Paket: 3-SMD, No Lead

JANTX1N5811URS

Microsemi Corporation

DIODE GEN PURP 150V 3A BPKG

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 150V
• Current - Average Rectified (Io): 3A
• Voltage - Forward (Vf) (Max) @ If: 875mV @ 4A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 30ns
• Current - Reverse Leakage @ Vr: 5µA @ 150V
• Capacitance @ Vr, F: 60pF @ 10V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: SQ-MELF, B
• Supplier Device Package: B, SQ-MELF
• Operating Temperature - Junction: -65°C ~ 175°C

Paket: SQ-MELF, B

JANTX1N5809URS

Microsemi Corporation

DIODE GEN PURP 100V 3A BPKG

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 100V
• Current - Average Rectified (Io): 3A
• Voltage - Forward (Vf) (Max) @ If: 875mV @ 4A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 30ns
• Current - Reverse Leakage @ Vr: 5µA @ 100V
• Capacitance @ Vr, F: 60pF @ 10V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: SQ-MELF, B
• Supplier Device Package: B, SQ-MELF
• Operating Temperature - Junction: -65°C ~ 175°C

Paket: SQ-MELF, B

JANTX1N5807URS

Microsemi Corporation

DIODE GEN PURP 50V 3A BPKG

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 50V
• Current - Average Rectified (Io): 3A
• Voltage - Forward (Vf) (Max) @ If: 875mV @ 4A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 30ns
• Current - Reverse Leakage @ Vr: 5µA @ 50V
• Capacitance @ Vr, F: 60pF @ 10V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: SQ-MELF, B
• Supplier Device Package: B, SQ-MELF
• Operating Temperature - Junction: -

Paket: SQ-MELF, B

JANTXV1N5551US

Microsemi Corporation

DIODE GEN PURP 400V 3A B-MELF

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 400V
• Current - Average Rectified (Io): 3A
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 9A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 2µs
• Current - Reverse Leakage @ Vr: 1µA @ 400V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: SQ-MELF, B
• Supplier Device Package: D-5B
• Operating Temperature - Junction: -65°C ~ 175°C

Paket: SQ-MELF, B

JANTX1N5551US

Microsemi Corporation

DIODE GEN PURP 400V 5A B-MELF

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 400V
• Current - Average Rectified (Io): 5A
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 9A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 2µs
• Current - Reverse Leakage @ Vr: 1µA @ 400V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: SQ-MELF, B
• Supplier Device Package: B, SQ-MELF
• Operating Temperature - Junction: -65°C ~ 175°C

Paket: SQ-MELF, B

JANTX1N3645

Microsemi Corporation

DIODE GEN PURP 2KV 250MA AXIAL

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 2000V
• Current - Average Rectified (Io): 250mA
• Voltage - Forward (Vf) (Max) @ If: 5V @ 250mA
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 5µA @ 2000V
• Capacitance @ Vr, F: -
• Mounting Type: Through Hole
• Package / Case: S, Axial
• Supplier Device Package: S, Axial
• Operating Temperature - Junction: -65°C ~ 175°C

Paket: S, Axial

JANTXV1N5809US

Microsemi Corporation

DIODE GEN PURP 100V 3A B-MELF

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 100V
• Current - Average Rectified (Io): 3A
• Voltage - Forward (Vf) (Max) @ If: 875mV @ 4A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 30ns
• Current - Reverse Leakage @ Vr: 5µA @ 100V
• Capacitance @ Vr, F: 60pF @ 10V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: SQ-MELF, B
• Supplier Device Package: B, SQ-MELF
• Operating Temperature - Junction: -65°C ~ 175°C

Paket: SQ-MELF, B

JAN1N5806URS

Microsemi Corporation

DIODE GEN PURP 150V 1A APKG

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 150V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 875mV @ 1A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 25ns
• Current - Reverse Leakage @ Vr: 1µA @ 150V
• Capacitance @ Vr, F: 25pF @ 10V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: SQ-MELF, A
• Supplier Device Package: A-MELF
• Operating Temperature - Junction: -65°C ~ 175°C

Paket: SQ-MELF, A

JAN1N5804URS

Microsemi Corporation

DIODE GEN PURP 100V 1A APKG

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 100V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 875mV @ 1A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 25ns
• Current - Reverse Leakage @ Vr: 1µA @ 100V
• Capacitance @ Vr, F: 25pF @ 10V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: SQ-MELF, A
• Supplier Device Package: A-MELF
• Operating Temperature - Junction: -65°C ~ 175°C

Paket: SQ-MELF, A

JAN1N5802URS

Microsemi Corporation

DIODE GEN PURP 50V 1A APKG

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 50V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 875mV @ 1A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 25ns
• Current - Reverse Leakage @ Vr: 1µA @ 50V
• Capacitance @ Vr, F: 25pF @ 10V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: SQ-MELF, A
• Supplier Device Package: D-5A
• Operating Temperature - Junction: -65°C ~ 175°C

Paket: SQ-MELF, A