Bild |
Teilenummer |
Hersteller |
Beschreibung |
Paket |
Lager |
Anzahl |
Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Speed | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Capacitance @ Vr, F | Mounting Type | Package / Case | Supplier Device Package | Operating Temperature - Junction |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Microsemi Corporation |
DIODE GEN PURP 400V 1A AXIAL
|
Paket: A, Axial |
Lager12.732 |
|
400V | 1A | 1.6V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 500nA @ 400V | 35pF @ 12V, 1MHz | Through Hole | A, Axial | - | -65°C ~ 175°C |
||
Microsemi Corporation |
DIODE GEN PURP 225V 400MA DO35
|
Paket: DO-204AH, DO-35, Axial |
Lager18.312 |
|
225V | 400mA | 1V @ 400mA | Standard Recovery >500ns, > 200mA (Io) | - | 50nA @ 225V | - | Through Hole | DO-204AH, DO-35, Axial | DO-35 | -65°C ~ 175°C |
||
Microsemi Corporation |
DIODE GEN PURP 50V 200MA DO213AA
|
Paket: DO-213AA (Glass) |
Lager5.664 |
|
50V | 200mA | 1V @ 200mA | Small Signal =< 200mA (Io), Any Speed | 4ns | 100nA @ 50V | - | Surface Mount | DO-213AA (Glass) | DO-213AA | -65°C ~ 175°C |
||
Microsemi Corporation |
DIODE GEN PURP 200MA DO35
|
Paket: SQ-MELF, B |
Lager14.616 |
|
- | 200mA (DC) | 1V @ 200mA | Small Signal =< 200mA (Io), Any Speed | 3µs | 1nA @ 125V | - | Surface Mount | SQ-MELF, B | B, SQ-MELF | -65°C ~ 150°C |
||
Microsemi Corporation |
DIODE GEN PURP 600V 3A AXIAL
|
Paket: B, Axial |
Lager13.104 |
|
600V | 3A | 1.2V @ 9A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 1µA @ 600V | - | Through Hole | B, Axial | - | -65°C ~ 175°C |
||
Microsemi Corporation |
DIODE GEN PURP 225V 200MA DO35
|
Paket: DO-204AH, DO-35, Axial |
Lager4.064 |
|
225V | 200mA (DC) | 1V @ 100mA | Fast Recovery =< 500ns, > 200mA (Io) | - | 25nA @ 225V | - | Through Hole | DO-204AH, DO-35, Axial | DO-35 | -65°C ~ 175°C |
||
Microsemi Corporation |
DIODE GEN PURP 100V 3A AXIAL
|
Paket: B, Axial |
Lager16.176 |
|
100V | 3A | 875mV @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 5µA @ 100V | 60pF @ 10V, 1MHz | Through Hole | B, Axial | - | -65°C ~ 175°C |
||
Microsemi Corporation |
DIODE GEN PURP 50V 300MA DO204AH
|
Paket: DO-204AH, DO-35, Axial |
Lager10.272 |
|
50V | 300mA | 1V @ 200mA | Fast Recovery =< 500ns, > 200mA (Io) | 4ns | 100nA @ 50V | - | Through Hole | DO-204AH, DO-35, Axial | - | -65°C ~ 175°C |
||
Microsemi Corporation |
DIODE GEN PURP 75V 300MA DO204AH
|
Paket: DO-204AH, DO-35, Axial |
Lager17.220 |
|
75V | 300mA | 1.2V @ 100mA | Fast Recovery =< 500ns, > 200mA (Io) | 5ns | 500nA @ 75V | 5pF @ 0V, 1MHz | Through Hole | DO-204AH, DO-35, Axial | - | -65°C ~ 175°C |
||
Microsemi Corporation |
DIODE GEN PURP 150V 1A D5A
|
Paket: SQ-MELF, A |
Lager18.864 |
|
150V | 1A | 875mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 1µA @ 150V | 25pF @ 10V, 1MHz | Surface Mount | SQ-MELF, A | D-5A | -65°C ~ 175°C |
||
Microsemi Corporation |
DIODE GEN PURP 150V 1A AXIAL
|
Paket: A, Axial |
Lager15.240 |
|
150V | 1A | 875mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 1µA @ 150V | 25pF @ 10V, 1MHz | Through Hole | A, Axial | - | -65°C ~ 175°C |
||
Microsemi Corporation |
DIODE GEN PURP 100V 25A DO4
|
Paket: DO-203AA, DO-4, Stud |
Lager6.504 |
|
100V | 25A | 950mV @ 25A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 20µA @ 100V | - | Chassis, Stud Mount | DO-203AA, DO-4, Stud | DO-4 | -55°C ~ 175°C |
||
Microsemi Corporation |
DIODE SCHOTTKY 5A 30V TOPHAT
|
Paket: Axial |
Lager2.040.000 |
|
30V | 5A | 370mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 10mA @ 30V | - | Through Hole | Axial | Axial | -65°C ~ 125°C |
||
Microsemi Corporation |
DIODE GEN PURP 80V DO35
|
Paket: DO-204AH, DO-35, Axial |
Lager14.886 |
|
80V | - | 1.1V @ 300mA | Fast Recovery =< 500ns, > 200mA (Io) | 6ns | 100nA @ 75V | - | Through Hole | DO-204AH, DO-35, Axial | DO-35 | -65°C ~ 175°C |
||
Microsemi Corporation |
DIODE SCHOTTKY 70V 33MA DO35
|
Paket: DO-204AH, DO-35, Axial |
Lager16.716 |
|
70V | 33mA | 410mV @ 1mA | Small Signal =< 200mA (Io), Any Speed | - | 200nA @ 50V | 2pF @ 0V, 1MHz | Through Hole | DO-204AH, DO-35, Axial | DO-35 | -65°C ~ 150°C |
||
Microsemi Corporation |
DIODE SCHOTTKY 45V 1A DO204AL
|
Paket: DO-204AL, DO-41, Axial |
Lager18.816 |
|
45V | 1A | 600mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 45V | 70pF @ 5V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -65°C ~ 125°C |
||
Microsemi Corporation |
DIODE GEN PURP 200V 1.75A D5B
|
Paket: SQ-MELF, E |
Lager15.072 |
|
200V | 1.75A | 1.35V @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 45ns | 2µA @ 200V | - | Surface Mount | SQ-MELF, E | D-5B | -65°C ~ 150°C |
||
Microsemi Corporation |
DIODE GEN PURP 600V 3A AXIAL
|
Paket: B, Axial |
Lager22.008 |
|
600V | 3A | 1.5V @ 9A | Fast Recovery =< 500ns, > 200mA (Io) | 400ns | 2µA @ 600V | - | Through Hole | B, Axial | - | - |
||
Microsemi Corporation |
DIODE GEN PURP 800V 5A AXIAL
|
Paket: B, Axial |
Lager7.656 |
|
800V | 5A | 1.3V @ 9A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 1µA @ 800V | - | Through Hole | B, Axial | - | -65°C ~ 175°C |
||
Microsemi Corporation |
DIODE GEN PURP 150V 3A B-MELF
|
Paket: SQ-MELF, B |
Lager23.988 |
|
150V | 3A | 875mV @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 5µA @ 150V | 60pF @ 10V, 1MHz | Surface Mount | SQ-MELF, B | B, SQ-MELF | -65°C ~ 175°C |
||
Microsemi Corporation |
DIODE GEN PURP 660V 1.2A A-MELF
|
Paket: SQ-MELF, A |
Lager7.884 |
|
660V | 1.2A | 1.4V @ 1.2A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 500nA @ 660V | 10pF @ 10V, 1MHz | Surface Mount | SQ-MELF, A | A-MELF | -65°C ~ 150°C |
||
Microsemi Corporation |
DIODE GEN PURP 440V 1.2A A-MELF
|
Paket: SQ-MELF, A |
Lager8.076 |
|
440V | 1.2A | 1.4V @ 1.2A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 500nA @ 440V | 10pF @ 10V, 1MHz | Surface Mount | SQ-MELF, A | A-MELF | -65°C ~ 150°C |
||
Microsemi Corporation |
DIODE GEN PURP 150V 1A AXIAL
|
Paket: A, Axial |
Lager18.348 |
|
150V | 1A | 875mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 1µA @ 150V | 25pF @ 10V, 1MHz | Through Hole | A, Axial | - | -65°C ~ 175°C |
||
Microsemi Corporation |
DIODE GEN PURP 200V 1A D5A
|
Paket: SQ-MELF, A |
Lager19.086 |
|
200V | 1A | 1.3V @ 3A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 500nA @ 200V | - | Surface Mount | SQ-MELF, A | D-5A | -65°C ~ 200°C |
||
Microsemi Corporation |
DIODE SCHOTTKY 70V 33MA DO213AA
|
Paket: DO-213AA |
Lager4.512 |
|
70V | 33mA | 1V @ 15mA | Small Signal =< 200mA (Io), Any Speed | - | 200nA @ 100V | 2pF @ 0V, 1MHz | Surface Mount | DO-213AA | DO-213AA | -65°C ~ 150°C |
||
Microsemi Corporation |
DIODE GEN PURP 600V 1.2A AXIAL
|
Paket: A, Axial |
Lager7.620 |
|
600V | 1.2A | 1.4V @ 1.2A | Fast Recovery =< 500ns, > 200mA (Io) | 45ns | 500nA @ 600V | - | Through Hole | A, Axial | A-PAK | -65°C ~ 150°C |
||
Microsemi Corporation |
DIODE GEN PURP 400V 1A AXIAL
|
Paket: A, Axial |
Lager20.196 |
|
400V | 1A | 1.6V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 500nA @ 400V | 35pF @ 12V, 1MHz | Through Hole | A, Axial | - | -65°C ~ 175°C |
||
Microsemi Corporation |
DIODE GEN PURP 200V 1A AXIAL
|
Paket: A, Axial |
Lager30.390 |
|
200V | 1A | 1.6V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 500nA @ 200V | 45pF @ 12V, 1MHz | Through Hole | A, Axial | A-PAK | -65°C ~ 175°C |
||
Microsemi Corporation |
DIODE GEN PURP 400V 1A AXIAL
|
Paket: A, Axial |
Lager7.248 |
|
400V | 1A | 1.3V @ 3A | Standard Recovery >500ns, > 200mA (Io) | 5µs | 1µA @ 400V | - | Through Hole | A, Axial | - | -65°C ~ 175°C |
||
Microsemi Corporation |
DIODE GEN PURP 150V 6A AXIAL
|
Paket: B, Axial |
Lager3.792 |
|
150V | 6A | 875mV @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 5µA @ 150V | - | Through Hole | B, Axial | - | -65°C ~ 175°C |