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Microsemi Corporation Produkte - Dioden - Gleichrichter - Einzeln

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Bild
Teilenummer
Hersteller
Beschreibung
Paket
Lager
Anzahl
Voltage - DC Reverse (Vr) (Max)
Current - Average Rectified (Io)
Voltage - Forward (Vf) (Max) @ If
Speed
Reverse Recovery Time (trr)
Current - Reverse Leakage @ Vr
Capacitance @ Vr, F
Mounting Type
Package / Case
Supplier Device Package
Operating Temperature - Junction
JANTX1N1190R
Microsemi Corporation

DIODE GEN PURP 600V 35A DO5

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 35A
  • Voltage - Forward (Vf) (Max) @ If: 1.4V @ 110A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 10µA @ 600V
  • Capacitance @ Vr, F: -
  • Mounting Type: Stud Mount
  • Package / Case: DO-203AB, DO-5, Stud
  • Supplier Device Package: DO-5
  • Operating Temperature - Junction: -65°C ~ 175°C
Paket: DO-203AB, DO-5, Stud
Lager6.540
600V
35A
1.4V @ 110A
Fast Recovery =< 500ns, > 200mA (Io)
-
10µA @ 600V
-
Stud Mount
DO-203AB, DO-5, Stud
DO-5
-65°C ~ 175°C
UFR3020
Microsemi Corporation

DIODE GEN PURP 200V 30A DO4

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io): 30A
  • Voltage - Forward (Vf) (Max) @ If: 975mV @ 30A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35ns
  • Current - Reverse Leakage @ Vr: 15µA @ 200V
  • Capacitance @ Vr, F: 140pF @ 10V, 1MHz
  • Mounting Type: Chassis, Stud Mount
  • Package / Case: DO-203AA, DO-4, Stud
  • Supplier Device Package: DO-4
  • Operating Temperature - Junction: -65°C ~ 175°C
Paket: DO-203AA, DO-4, Stud
Lager6.960
200V
30A
975mV @ 30A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
15µA @ 200V
140pF @ 10V, 1MHz
Chassis, Stud Mount
DO-203AA, DO-4, Stud
DO-4
-65°C ~ 175°C
1N6392
Microsemi Corporation

DIODE SCHOTTKY 45V 54A DO5

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 45V
  • Current - Average Rectified (Io): 54A
  • Voltage - Forward (Vf) (Max) @ If: 820mV @ 120A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 2mA @ 45V
  • Capacitance @ Vr, F: 3000pF @ 5V, 1MHz
  • Mounting Type: Chassis, Stud Mount
  • Package / Case: DO-203AB, DO-5, Stud
  • Supplier Device Package: DO-5
  • Operating Temperature - Junction: -55°C ~ 175°C
Paket: DO-203AB, DO-5, Stud
Lager6.608
45V
54A
820mV @ 120A
Fast Recovery =< 500ns, > 200mA (Io)
-
2mA @ 45V
3000pF @ 5V, 1MHz
Chassis, Stud Mount
DO-203AB, DO-5, Stud
DO-5
-55°C ~ 175°C
hot 1N4725
Microsemi Corporation

DIODE GEN PURP 1KV 3A AXIAL

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1000V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 3A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 25µA @ 1000V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: Axial
  • Supplier Device Package: -
  • Operating Temperature - Junction: -65°C ~ 175°C
Paket: Axial
Lager7.032
1000V
3A
1V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
-
25µA @ 1000V
-
Through Hole
Axial
-
-65°C ~ 175°C
hot UES1305
Microsemi Corporation

DIODE GEN PURP 300V 3A AXIAL

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 300V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 1.25V @ 3A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50ns
  • Current - Reverse Leakage @ Vr: 20µA @ 300V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: B, Axial
  • Supplier Device Package: -
  • Operating Temperature - Junction: -55°C ~ 150°C
Paket: B, Axial
Lager9.228
300V
3A
1.25V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
20µA @ 300V
-
Through Hole
B, Axial
-
-55°C ~ 150°C
UES1102SM
Microsemi Corporation

DIODE GEN PURP 100V 2.5A A-MELF

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io): 2.5A
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 25ns
  • Current - Reverse Leakage @ Vr: 2µA @ 100V
  • Capacitance @ Vr, F: 3.5pF @ 6V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SQ-MELF, A
  • Supplier Device Package: A-MELF
  • Operating Temperature - Junction: 150°C (Max)
Paket: SQ-MELF, A
Lager7.392
100V
2.5A
-
Fast Recovery =< 500ns, > 200mA (Io)
25ns
2µA @ 100V
3.5pF @ 6V, 1MHz
Surface Mount
SQ-MELF, A
A-MELF
150°C (Max)
UES1103SM
Microsemi Corporation

DIODE GEN PURP 150V 2.5A A-MELF

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 150V
  • Current - Average Rectified (Io): 2.5A
  • Voltage - Forward (Vf) (Max) @ If: 975mV @ 2A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 25ns
  • Current - Reverse Leakage @ Vr: 2µA @ 150V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: SQ-MELF, A
  • Supplier Device Package: A-MELF
  • Operating Temperature - Junction: 175°C (Max)
Paket: SQ-MELF, A
Lager5.552
150V
2.5A
975mV @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
25ns
2µA @ 150V
-
Surface Mount
SQ-MELF, A
A-MELF
175°C (Max)
UES1104
Microsemi Corporation

DIODE GEN PURP 200V 1A AXIAL

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.25V @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50ns
  • Current - Reverse Leakage @ Vr: 10µA @ 200V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: A, Axial
  • Supplier Device Package: -
  • Operating Temperature - Junction: -55°C ~ 150°C
Paket: A, Axial
Lager6.036
200V
1A
1.25V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
10µA @ 200V
-
Through Hole
A, Axial
-
-55°C ~ 150°C
JANTX1N6075
Microsemi Corporation

DIODE GEN PURP 150V 850MA AXIAL

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 150V
  • Current - Average Rectified (Io): 850mA
  • Voltage - Forward (Vf) (Max) @ If: 2.04V @ 9.4A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 30ns
  • Current - Reverse Leakage @ Vr: 1µA @ 150V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: A, Axial
  • Supplier Device Package: A-PAK
  • Operating Temperature - Junction: -65°C ~ 155°C
Paket: A, Axial
Lager3.792
150V
850mA
2.04V @ 9.4A
Fast Recovery =< 500ns, > 200mA (Io)
30ns
1µA @ 150V
-
Through Hole
A, Axial
A-PAK
-65°C ~ 155°C
1N6663US
Microsemi Corporation

DIODE GEN PURP 600V 500MA D5A

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 500mA (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 400mA
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 50nA @ 600V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: SQ-MELF, A
  • Supplier Device Package: D-5A
  • Operating Temperature - Junction: -65°C ~ 175°C
Paket: SQ-MELF, A
Lager5.200
600V
500mA (DC)
1V @ 400mA
Fast Recovery =< 500ns, > 200mA (Io)
-
50nA @ 600V
-
Surface Mount
SQ-MELF, A
D-5A
-65°C ~ 175°C
UES1002
Microsemi Corporation

DIODE GEN PURP 100V 1A AXIAL

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 975mV @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 25ns
  • Current - Reverse Leakage @ Vr: 2µA @ 100V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: A, Axial
  • Supplier Device Package: -
  • Operating Temperature - Junction: -55°C ~ 175°C
Paket: A, Axial
Lager6.832
100V
1A
975mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
25ns
2µA @ 100V
-
Through Hole
A, Axial
-
-55°C ~ 175°C
JANTX1N3595US
Microsemi Corporation

DIODE GEN PURP 200A B-MELF

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io): 200A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 200mA
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 3µs
  • Current - Reverse Leakage @ Vr: 1nA @ 125V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: SQ-MELF, B
  • Supplier Device Package: B, SQ-MELF
  • Operating Temperature - Junction: -65°C ~ 150°C
Paket: SQ-MELF, B
Lager6.112
-
200A (DC)
1V @ 200mA
Standard Recovery >500ns, > 200mA (Io)
3µs
1nA @ 125V
-
Surface Mount
SQ-MELF, B
B, SQ-MELF
-65°C ~ 150°C
1N6628US
Microsemi Corporation

DIODE GEN PURP 660V 1.75A A-MELF

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 660V
  • Current - Average Rectified (Io): 1.75A
  • Voltage - Forward (Vf) (Max) @ If: 1.35V @ 2A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 30ns
  • Current - Reverse Leakage @ Vr: 2µA @ 660V
  • Capacitance @ Vr, F: 40pF @ 10V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SQ-MELF, A
  • Supplier Device Package: A-MELF
  • Operating Temperature - Junction: -65°C ~ 150°C
Paket: SQ-MELF, A
Lager7.376
660V
1.75A
1.35V @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
30ns
2µA @ 660V
40pF @ 10V, 1MHz
Surface Mount
SQ-MELF, A
A-MELF
-65°C ~ 150°C
JANTXV1N5616
Microsemi Corporation

DIODE GEN PURP 400V 1A AXIAL

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.3V @ 3A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 2µs
  • Current - Reverse Leakage @ Vr: 500nA @ 400V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: A, Axial
  • Supplier Device Package: -
  • Operating Temperature - Junction: -65°C ~ 200°C
Paket: A, Axial
Lager6.560
400V
1A
1.3V @ 3A
Standard Recovery >500ns, > 200mA (Io)
2µs
500nA @ 400V
-
Through Hole
A, Axial
-
-65°C ~ 200°C
JANTXV1N5550
Microsemi Corporation

DIODE GEN PURP 200V 5A AXIAL

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io): 5A
  • Voltage - Forward (Vf) (Max) @ If: 1.2V @ 9A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 2µs
  • Current - Reverse Leakage @ Vr: 1µA @ 200V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: B, Axial
  • Supplier Device Package: -
  • Operating Temperature - Junction: -65°C ~ 175°C
Paket: B, Axial
Lager6.720
200V
5A
1.2V @ 9A
Standard Recovery >500ns, > 200mA (Io)
2µs
1µA @ 200V
-
Through Hole
B, Axial
-
-65°C ~ 175°C
JANTXV1N5622
Microsemi Corporation

DIODE GEN PURP 1KV 1A AXIAL

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1000V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.3V @ 3A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 2µs
  • Current - Reverse Leakage @ Vr: 500nA @ 1000V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: A, Axial
  • Supplier Device Package: -
  • Operating Temperature - Junction: -65°C ~ 200°C
Paket: A, Axial
Lager5.104
1000V
1A
1.3V @ 3A
Standard Recovery >500ns, > 200mA (Io)
2µs
500nA @ 1000V
-
Through Hole
A, Axial
-
-65°C ~ 200°C
JANTX1N5419
Microsemi Corporation

DIODE GEN PURP 500V 3A AXIAL

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 500V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 1.5V @ 9A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 250ns
  • Current - Reverse Leakage @ Vr: 1µA @ 500V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: B, Axial
  • Supplier Device Package: -
  • Operating Temperature - Junction: -65°C ~ 175°C
Paket: B, Axial
Lager6.048
500V
3A
1.5V @ 9A
Fast Recovery =< 500ns, > 200mA (Io)
250ns
1µA @ 500V
-
Through Hole
B, Axial
-
-65°C ~ 175°C
JANTX1N5802
Microsemi Corporation

DIODE GEN PURP 50V 1A AXIAL

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 50V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 875mV @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 25ns
  • Current - Reverse Leakage @ Vr: 1µA @ 50V
  • Capacitance @ Vr, F: 25pF @ 10V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: A, Axial
  • Supplier Device Package: -
  • Operating Temperature - Junction: -65°C ~ 175°C
Paket: A, Axial
Lager6.608
50V
1A
875mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
25ns
1µA @ 50V
25pF @ 10V, 1MHz
Through Hole
A, Axial
-
-65°C ~ 175°C
1N5417US
Microsemi Corporation

DIODE GEN PURP 200V 3A D5B

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 1.5V @ 9A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 150ns
  • Current - Reverse Leakage @ Vr: 1µA @ 200V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: E-MELF
  • Supplier Device Package: D-5B
  • Operating Temperature - Junction: -65°C ~ 175°C
Paket: E-MELF
Lager6.096
200V
3A
1.5V @ 9A
Fast Recovery =< 500ns, > 200mA (Io)
150ns
1µA @ 200V
-
Surface Mount
E-MELF
D-5B
-65°C ~ 175°C
1N5553US
Microsemi Corporation

DIODE GEN PURP 800V 3A B-MELF

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 800V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 1.2V @ 9A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 2µs
  • Current - Reverse Leakage @ Vr: 1µA @ 800V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: SQ-MELF, B
  • Supplier Device Package: B, SQ-MELF
  • Operating Temperature - Junction: -65°C ~ 175°C
Paket: SQ-MELF, B
Lager7.032
800V
3A
1.2V @ 9A
Standard Recovery >500ns, > 200mA (Io)
2µs
1µA @ 800V
-
Surface Mount
SQ-MELF, B
B, SQ-MELF
-65°C ~ 175°C
JANTX1N4248
Microsemi Corporation

DIODE GEN PURP 800V 1A E3

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 800V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.3V @ 3A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 5µs
  • Current - Reverse Leakage @ Vr: 1µA @ 800V
  • Capacitance @ Vr, F: -
  • Mounting Type: -
  • Package / Case: E3
  • Supplier Device Package: E3
  • Operating Temperature - Junction: -65°C ~ 175°C
Paket: E3
Lager6.228
800V
1A
1.3V @ 3A
Standard Recovery >500ns, > 200mA (Io)
5µs
1µA @ 800V
-
-
E3
E3
-65°C ~ 175°C
CDLL5195
Microsemi Corporation

DIODE GEN PURP 180V 200MA DO213

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 180V
  • Current - Average Rectified (Io): 200mA
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 100mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 100µA @ 180V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-213AA
  • Supplier Device Package: DO-213AA
  • Operating Temperature - Junction: -65°C ~ 175°C
Paket: DO-213AA
Lager7.440
180V
200mA
1V @ 100mA
Small Signal =< 200mA (Io), Any Speed
-
100µA @ 180V
-
Surface Mount
DO-213AA
DO-213AA
-65°C ~ 175°C
hot JAN1N5419
Microsemi Corporation

DIODE GEN PURP 500V 3A AXIAL

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 500V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 1.5V @ 9A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 250ns
  • Current - Reverse Leakage @ Vr: 1µA @ 500V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: B, Axial
  • Supplier Device Package: -
  • Operating Temperature - Junction: -65°C ~ 175°C
Paket: B, Axial
Lager8.292
500V
3A
1.5V @ 9A
Fast Recovery =< 500ns, > 200mA (Io)
250ns
1µA @ 500V
-
Through Hole
B, Axial
-
-65°C ~ 175°C
hot JAN1N5711-1
Microsemi Corporation

DIODE SCHOTTKY 70V 33MA DO35

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 70V
  • Current - Average Rectified (Io): 33mA
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 15mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 200nA @ 70V
  • Capacitance @ Vr, F: 2pF @ 0V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-204AH, DO-35, Axial
  • Supplier Device Package: DO-35
  • Operating Temperature - Junction: -65°C ~ 150°C
Paket: DO-204AH, DO-35, Axial
Lager9.012
70V
33mA
1V @ 15mA
Small Signal =< 200mA (Io), Any Speed
-
200nA @ 70V
2pF @ 0V, 1MHz
Through Hole
DO-204AH, DO-35, Axial
DO-35
-65°C ~ 150°C
JANTX1N5614
Microsemi Corporation

DIODE GEN PURP 200V 1A AXIAL

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.3V @ 3A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 2µs
  • Current - Reverse Leakage @ Vr: 500nA @ 200V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: A, Axial
  • Supplier Device Package: -
  • Operating Temperature - Junction: -65°C ~ 200°C
Paket: A, Axial
Lager5.744
200V
1A
1.3V @ 3A
Standard Recovery >500ns, > 200mA (Io)
2µs
500nA @ 200V
-
Through Hole
A, Axial
-
-65°C ~ 200°C
JAN1N5619
Microsemi Corporation

DIODE GEN PURP 600V 1A AXIAL

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.6V @ 3A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 250ns
  • Current - Reverse Leakage @ Vr: 500nA @ 800V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: A, Axial
  • Supplier Device Package: -
  • Operating Temperature - Junction: -65°C ~ 175°C
Paket: A, Axial
Lager7.776
600V
1A
1.6V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
250ns
500nA @ 800V
-
Through Hole
A, Axial
-
-65°C ~ 175°C
APT60D40BG
Microsemi Corporation

DIODE GEN PURP 400V 60A TO247

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400V
  • Current - Average Rectified (Io): 60A
  • Voltage - Forward (Vf) (Max) @ If: 1.5V @ 60A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 37ns
  • Current - Reverse Leakage @ Vr: 250µA @ 400V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-247-2
  • Supplier Device Package: TO-247 [B]
  • Operating Temperature - Junction: -55°C ~ 175°C
Paket: TO-247-2
Lager5.792
400V
60A
1.5V @ 60A
Fast Recovery =< 500ns, > 200mA (Io)
37ns
250µA @ 400V
-
Through Hole
TO-247-2
TO-247 [B]
-55°C ~ 175°C
APT60DQ100BG
Microsemi Corporation

DIODE GEN PURP 1KV 60A TO247

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1000V
  • Current - Average Rectified (Io): 60A
  • Voltage - Forward (Vf) (Max) @ If: 3V @ 60A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 255ns
  • Current - Reverse Leakage @ Vr: 100µA @ 1000V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-247-2
  • Supplier Device Package: TO-247 [B]
  • Operating Temperature - Junction: -55°C ~ 175°C
Paket: TO-247-2
Lager6.264
1000V
60A
3V @ 60A
Fast Recovery =< 500ns, > 200mA (Io)
255ns
100µA @ 1000V
-
Through Hole
TO-247-2
TO-247 [B]
-55°C ~ 175°C
hot APT30D20BG
Microsemi Corporation

DIODE GEN PURP 200V 30A TO247

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io): 30A
  • Voltage - Forward (Vf) (Max) @ If: 1.3V @ 30A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 24ns
  • Current - Reverse Leakage @ Vr: 250µA @ 200V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-247-2
  • Supplier Device Package: TO-247 [B]
  • Operating Temperature - Junction: -55°C ~ 175°C
Paket: TO-247-2
Lager10.632
200V
30A
1.3V @ 30A
Fast Recovery =< 500ns, > 200mA (Io)
24ns
250µA @ 200V
-
Through Hole
TO-247-2
TO-247 [B]
-55°C ~ 175°C
hot APT30DQ120BG
Microsemi Corporation

DIODE GEN PURP 1.2KV 30A TO247

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1200V
  • Current - Average Rectified (Io): 30A
  • Voltage - Forward (Vf) (Max) @ If: 3.3V @ 30A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 320ns
  • Current - Reverse Leakage @ Vr: 100µA @ 1200V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-247-2
  • Supplier Device Package: TO-247 [B]
  • Operating Temperature - Junction: -55°C ~ 175°C
Paket: TO-247-2
Lager49.356
1200V
30A
3.3V @ 30A
Fast Recovery =< 500ns, > 200mA (Io)
320ns
100µA @ 1200V
-
Through Hole
TO-247-2
TO-247 [B]
-55°C ~ 175°C