Page 6 - Microsemi Corporation Produkte - Dioden - Gleichrichter - Einzeln

Teilenummer	Hersteller	Beschreibung	Paket	Lager	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
APT15DQ120BG	Microsemi Corporation	DIODE GEN PURP 1.2KV 15A TO247 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io): 15A Voltage - Forward (Vf) (Max) @ If: 3.3V @ 15A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 240ns Current - Reverse Leakage @ Vr: 100µA @ 1200V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247 [B] Operating Temperature - Junction: -55°C ~ 175°C	Paket: TO-247-3	Lager31.800	1200V	15A	3.3V @ 15A	Fast Recovery =< 500ns, > 200mA (Io)	240ns	100µA @ 1200V	-	Through Hole	TO-247-3	TO-247 [B]	-55°C ~ 175°C
APT15DQ100BG	Microsemi Corporation	DIODE GEN PURP 1KV 15A TO247 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000V Current - Average Rectified (Io): 15A Voltage - Forward (Vf) (Max) @ If: 3V @ 15A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 235ns Current - Reverse Leakage @ Vr: 100µA @ 1000V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247 [B] Operating Temperature - Junction: -55°C ~ 175°C	Paket: TO-247-3	Lager3.840	1000V	15A	3V @ 15A	Fast Recovery =< 500ns, > 200mA (Io)	235ns	100µA @ 1000V	-	Through Hole	TO-247-3	TO-247 [B]	-55°C ~ 175°C
APT15D120KG	Microsemi Corporation	DIODE GEN PURP 1.2KV 15A TO220 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io): 15A Voltage - Forward (Vf) (Max) @ If: 2.5V @ 15A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 260ns Current - Reverse Leakage @ Vr: 250µA @ 1200V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220 [K] Operating Temperature - Junction: -55°C ~ 175°C	Paket: TO-220-3	Lager6.176	1200V	15A	2.5V @ 15A	Fast Recovery =< 500ns, > 200mA (Io)	260ns	250µA @ 1200V	-	Through Hole	TO-220-3	TO-220 [K]	-55°C ~ 175°C
APT15DQ120KG	Microsemi Corporation	DIODE GEN PURP 1.2KV 15A TO220 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io): 15A Voltage - Forward (Vf) (Max) @ If: 3.3V @ 15A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 240ns Current - Reverse Leakage @ Vr: 100µA @ 1200V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220 [K] Operating Temperature - Junction: -55°C ~ 175°C	Paket: TO-220-2	Lager51.228	1200V	15A	3.3V @ 15A	Fast Recovery =< 500ns, > 200mA (Io)	240ns	100µA @ 1200V	-	Through Hole	TO-220-2	TO-220 [K]	-55°C ~ 175°C
APT15DQ100KG	Microsemi Corporation	DIODE GEN PURP 1KV 15A TO220 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000V Current - Average Rectified (Io): 15A Voltage - Forward (Vf) (Max) @ If: 3V @ 15A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 235ns Current - Reverse Leakage @ Vr: 100µA @ 1000V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220 [K] Operating Temperature - Junction: -55°C ~ 175°C	Paket: TO-220-3	Lager9.024	1000V	15A	3V @ 15A	Fast Recovery =< 500ns, > 200mA (Io)	235ns	100µA @ 1000V	-	Through Hole	TO-220-3	TO-220 [K]	-55°C ~ 175°C
APTDF500U40G	Microsemi Corporation	DIODE MODULE 400V 500A LP4 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 500A Voltage - Forward (Vf) (Max) @ If: 1.5V @ 500A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 120ns Current - Reverse Leakage @ Vr: 2.5mA @ 400V Capacitance @ Vr, F: - Mounting Type: Chassis Mount Package / Case: LP4 Supplier Device Package: LP4 Operating Temperature - Junction: -	Paket: LP4	Lager7.056	400V	500A	1.5V @ 500A	Fast Recovery =< 500ns, > 200mA (Io)	120ns	2.5mA @ 400V	-	Chassis Mount	LP4	LP4	-
JANTX1N5712UR-1	Microsemi Corporation	DIODE SCHOTTKY 20V 75MA DO213AA Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 20V Current - Average Rectified (Io): 75mA Voltage - Forward (Vf) (Max) @ If: 1V @ 35mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 150nA @ 16V Capacitance @ Vr, F: 2pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: DO-213AA Supplier Device Package: DO-213AA Operating Temperature - Junction: -65°C ~ 150°C	Paket: DO-213AA	Lager4.688	20V	75mA	1V @ 35mA	Small Signal =< 200mA (Io), Any Speed	-	150nA @ 16V	2pF @ 0V, 1MHz	Surface Mount	DO-213AA	DO-213AA	-65°C ~ 150°C
UES1302	Microsemi Corporation	DIODE GEN PURP 100V 6A AXIAL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 6A Voltage - Forward (Vf) (Max) @ If: 925mV @ 6A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 30ns Current - Reverse Leakage @ Vr: 5µA @ 100V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: Axial Supplier Device Package: Axial Operating Temperature - Junction: -55°C ~ 175°C	Paket: Axial	Lager7.888	100V	6A	925mV @ 6A	Standard Recovery >500ns, > 200mA (Io)	30ns	5µA @ 100V	-	Through Hole	Axial	Axial	-55°C ~ 175°C
APT30SCD120S	Microsemi Corporation	DIODE SCHOTTKY 1.2KV 99A D3PAK Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io): 99A (DC) Voltage - Forward (Vf) (Max) @ If: 1.8V @ 30A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 600µA @ 1200V Capacitance @ Vr, F: 2100pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA Supplier Device Package: D3Pak Operating Temperature - Junction: -55°C ~ 150°C	Paket: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA	Lager5.616	1200V	99A (DC)	1.8V @ 30A	No Recovery Time > 500mA (Io)	0ns	600µA @ 1200V	2100pF @ 0V, 1MHz	Surface Mount	TO-268-3, D3Pak (2 Leads + Tab), TO-268AA	D3Pak	-55°C ~ 150°C
UES1106	Microsemi Corporation	DIODE GEN PURP 400V 1A AXIAL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.25V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50ns Current - Reverse Leakage @ Vr: 10µA @ 400V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: A, Axial Supplier Device Package: - Operating Temperature - Junction: -55°C ~ 150°C	Paket: A, Axial	Lager6.804	400V	1A	1.25V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	10µA @ 400V	-	Through Hole	A, Axial	-	-55°C ~ 150°C
UES1103	Microsemi Corporation	DIODE GEN PURP 150V 2.5A AXIAL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 150V Current - Average Rectified (Io): 2.5A Voltage - Forward (Vf) (Max) @ If: 975mV @ 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25ns Current - Reverse Leakage @ Vr: 2µA @ 150V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: A, Axial Supplier Device Package: - Operating Temperature - Junction: 175°C (Max)	Paket: A, Axial	Lager5.184	150V	2.5A	975mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	25ns	2µA @ 150V	-	Through Hole	A, Axial	-	175°C (Max)
JANTX1N6643US	Microsemi Corporation	DIODE GEN PURP 125V 300MA D5D Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 125V Current - Average Rectified (Io): 300mA Voltage - Forward (Vf) (Max) @ If: 1.2V @ 100mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 6ns Current - Reverse Leakage @ Vr: 50nA @ 20V Capacitance @ Vr, F: 5pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: SQ-MELF, D Supplier Device Package: D-5D Operating Temperature - Junction: -65°C ~ 175°C	Paket: SQ-MELF, D	Lager6.516	125V	300mA	1.2V @ 100mA	Fast Recovery =< 500ns, > 200mA (Io)	6ns	50nA @ 20V	5pF @ 0V, 1MHz	Surface Mount	SQ-MELF, D	D-5D	-65°C ~ 175°C
1N5551US	Microsemi Corporation	DIODE GEN PURP 400V 3A D5B Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.2V @ 9A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2µs Current - Reverse Leakage @ Vr: 1µA @ 400V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SQ-MELF, B Supplier Device Package: D-5B Operating Temperature - Junction: -65°C ~ 175°C	Paket: SQ-MELF, B	Lager7.664	400V	3A	1.2V @ 9A	Standard Recovery >500ns, > 200mA (Io)	2µs	1µA @ 400V	-	Surface Mount	SQ-MELF, B	D-5B	-65°C ~ 175°C
JAN1N5622	Microsemi Corporation	DIODE GEN PURP 1KV 1A AXIAL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 3A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2µs Current - Reverse Leakage @ Vr: 500nA @ 1000V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: A, Axial Supplier Device Package: - Operating Temperature - Junction: -65°C ~ 200°C	Paket: A, Axial	Lager5.344	1000V	1A	1.3V @ 3A	Standard Recovery >500ns, > 200mA (Io)	2µs	500nA @ 1000V	-	Through Hole	A, Axial	-	-65°C ~ 200°C
1N6640US	Microsemi Corporation	DIODE GEN PURP 75V 300MA D5D Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 75V Current - Average Rectified (Io): 300mA (DC) Voltage - Forward (Vf) (Max) @ If: 1V @ 200mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 4ns Current - Reverse Leakage @ Vr: 100nA @ 50V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SQ-MELF, D Supplier Device Package: D-5D Operating Temperature - Junction: -65°C ~ 175°C	Paket: SQ-MELF, D	Lager5.392	75V	300mA (DC)	1V @ 200mA	Fast Recovery =< 500ns, > 200mA (Io)	4ns	100nA @ 50V	-	Surface Mount	SQ-MELF, D	D-5D	-65°C ~ 175°C
1N5552	Microsemi Corporation	DIODE GEN PURP 600V 3A AXIAL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.2V @ 9A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2µs Current - Reverse Leakage @ Vr: 1µA @ 600V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: B, Axial Supplier Device Package: - Operating Temperature - Junction: -65°C ~ 175°C	Paket: B, Axial	Lager4.928	600V	3A	1.2V @ 9A	Standard Recovery >500ns, > 200mA (Io)	2µs	1µA @ 600V	-	Through Hole	B, Axial	-	-65°C ~ 175°C
JAN1N4942	Microsemi Corporation	DIODE GEN PURP 200V 1A AXIAL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150ns Current - Reverse Leakage @ Vr: 1µA @ 200V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: A, Axial Supplier Device Package: - Operating Temperature - Junction: -65°C ~ 175°C	Paket: A, Axial	Lager6.416	200V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	1µA @ 200V	-	Through Hole	A, Axial	-	-65°C ~ 175°C
1N3611	Microsemi Corporation	DIODE GEN PURP 200V 1A AXIAL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1µA @ 200V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: A, Axial Supplier Device Package: - Operating Temperature - Junction: -65°C ~ 175°C	Paket: A, Axial	Lager7.504	200V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	1µA @ 200V	-	Through Hole	A, Axial	-	-65°C ~ 175°C
JANTX1N4150-1	Microsemi Corporation	DIODE GEN PURP 50V 200MA DO35 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 200mA Voltage - Forward (Vf) (Max) @ If: 1V @ 200mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4ns Current - Reverse Leakage @ Vr: 100nA @ 50V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-204AH, DO-35, Axial Supplier Device Package: DO-35 Operating Temperature - Junction: -65°C ~ 175°C	Paket: DO-204AH, DO-35, Axial	Lager6.816	50V	200mA	1V @ 200mA	Small Signal =< 200mA (Io), Any Speed	4ns	100nA @ 50V	-	Through Hole	DO-204AH, DO-35, Axial	DO-35	-65°C ~ 175°C
JAN1N914	Microsemi Corporation	DIODE GEN PURP 75V 200MA DO35 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 75V Current - Average Rectified (Io): 200mA Voltage - Forward (Vf) (Max) @ If: 1.2V @ 50mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 20ns Current - Reverse Leakage @ Vr: 500nA @ 75V Capacitance @ Vr, F: 2.8pF @ 1.5V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AH, DO-35, Axial Supplier Device Package: DO-35 (DO-204AH) Operating Temperature - Junction: -65°C ~ 150°C	Paket: DO-204AH, DO-35, Axial	Lager6.480	75V	200mA	1.2V @ 50mA	Small Signal =< 200mA (Io), Any Speed	20ns	500nA @ 75V	2.8pF @ 1.5V, 1MHz	Through Hole	DO-204AH, DO-35, Axial	DO-35 (DO-204AH)	-65°C ~ 150°C
APT15D100KG	Microsemi Corporation	DIODE GEN PURP 1KV 15A TO220 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000V Current - Average Rectified (Io): 15A Voltage - Forward (Vf) (Max) @ If: 2.3V @ 15A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 260ns Current - Reverse Leakage @ Vr: 250µA @ 1000V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220 [K] Operating Temperature - Junction: -55°C ~ 175°C	Paket: TO-220-3	Lager4.912	1000V	15A	2.3V @ 15A	Fast Recovery =< 500ns, > 200mA (Io)	260ns	250µA @ 1000V	-	Through Hole	TO-220-3	TO-220 [K]	-55°C ~ 175°C
1N4153-1	Microsemi Corporation	DIODE GEN PURP 50V 150MA DO35 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 150mA Voltage - Forward (Vf) (Max) @ If: 880mV @ 20mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4ns Current - Reverse Leakage @ Vr: 50nA @ 50V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-204AH, DO-35, Axial Supplier Device Package: DO-35 Operating Temperature - Junction: -65°C ~ 175°C	Paket: DO-204AH, DO-35, Axial	Lager8.472	50V	150mA	880mV @ 20mA	Small Signal =< 200mA (Io), Any Speed	4ns	50nA @ 50V	-	Through Hole	DO-204AH, DO-35, Axial	DO-35	-65°C ~ 175°C
1N4150-1	Microsemi Corporation	DIODE GEN PURP 50V 200MA DO35 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 200mA Voltage - Forward (Vf) (Max) @ If: 1V @ 200mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4ns Current - Reverse Leakage @ Vr: 100nA @ 50V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-204AH, DO-35, Axial Supplier Device Package: DO-35 Operating Temperature - Junction: -65°C ~ 175°C	Paket: DO-204AH, DO-35, Axial	Lager20.316	50V	200mA	1V @ 200mA	Small Signal =< 200mA (Io), Any Speed	4ns	100nA @ 50V	-	Through Hole	DO-204AH, DO-35, Axial	DO-35	-65°C ~ 175°C
APT15D60KG	Microsemi Corporation	DIODE GEN PURP 600V 15A TO220 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 15A Voltage - Forward (Vf) (Max) @ If: 1.8V @ 15A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 80ns Current - Reverse Leakage @ Vr: 250µA @ 600V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220 [K] Operating Temperature - Junction: -55°C ~ 175°C	Paket: TO-220-2	Lager15.696	600V	15A	1.8V @ 15A	Fast Recovery =< 500ns, > 200mA (Io)	80ns	250µA @ 600V	-	Through Hole	TO-220-2	TO-220 [K]	-55°C ~ 175°C
JAN1N4148-1	Microsemi Corporation	DIODE GEN PURP 75V 200MA DO35 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 75V Current - Average Rectified (Io): 200mA Voltage - Forward (Vf) (Max) @ If: 1.2V @ 100mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 20ns Current - Reverse Leakage @ Vr: 500nA @ 75V Capacitance @ Vr, F: 4pF @ 0V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AH, DO-35, Axial Supplier Device Package: DO-35 Operating Temperature - Junction: -65°C ~ 175°C	Paket: DO-204AH, DO-35, Axial	Lager294.348	75V	200mA	1.2V @ 100mA	Small Signal =< 200mA (Io), Any Speed	20ns	500nA @ 75V	4pF @ 0V, 1MHz	Through Hole	DO-204AH, DO-35, Axial	DO-35	-65°C ~ 175°C
APT15DQ60KG	Microsemi Corporation	DIODE GEN PURP 600V 15A TO220 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 15A Voltage - Forward (Vf) (Max) @ If: 2.4V @ 15A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 19ns Current - Reverse Leakage @ Vr: 25µA @ 600V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220 [K] Operating Temperature - Junction: -55°C ~ 175°C	Paket: TO-220-2	Lager131.976	600V	15A	2.4V @ 15A	Fast Recovery =< 500ns, > 200mA (Io)	19ns	25µA @ 600V	-	Through Hole	TO-220-2	TO-220 [K]	-55°C ~ 175°C
JANTX1N1190	Microsemi Corporation	DIODE GEN PURP 600V 35A DO5 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 35A Voltage - Forward (Vf) (Max) @ If: 1.4V @ 110A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10µA @ 600V Capacitance @ Vr, F: - Mounting Type: Stud Mount Package / Case: DO-203AB, DO-5, Stud Supplier Device Package: DO-5 Operating Temperature - Junction: -65°C ~ 175°C	Paket: DO-203AB, DO-5, Stud	Lager4.960	600V	35A	1.4V @ 110A	Fast Recovery =< 500ns, > 200mA (Io)	-	10µA @ 600V	-	Stud Mount	DO-203AB, DO-5, Stud	DO-5	-65°C ~ 175°C
APTDF450U60G	Microsemi Corporation	DIODE MODULE 600V 500A LP4 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 500A Voltage - Forward (Vf) (Max) @ If: 1.8V @ 500A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 115ns Current - Reverse Leakage @ Vr: 2.5mA @ 600V Capacitance @ Vr, F: - Mounting Type: Chassis Mount Package / Case: LP4 Supplier Device Package: LP4 Operating Temperature - Junction: -	Paket: LP4	Lager6.000	600V	500A	1.8V @ 500A	Fast Recovery =< 500ns, > 200mA (Io)	115ns	2.5mA @ 600V	-	Chassis Mount	LP4	LP4	-
APT30SCD120B	Microsemi Corporation	DIODE SCHOTTKY 1.2KV 99A Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io): 99A (DC) Voltage - Forward (Vf) (Max) @ If: 1.8V @ 30A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 600µA @ 1200V Capacitance @ Vr, F: 2100pF @ 0V, 1MHz Mounting Type: Through Hole Package / Case: TO-247-2 Supplier Device Package: TO-247 Operating Temperature - Junction: -55°C ~ 150°C	Paket: TO-247-2	Lager6.864	1200V	99A (DC)	1.8V @ 30A	No Recovery Time > 500mA (Io)	0ns	600µA @ 1200V	2100pF @ 0V, 1MHz	Through Hole	TO-247-2	TO-247	-55°C ~ 150°C
1N3595US	Microsemi Corporation	DIODE GEN PURP 4A B-MELF Diode Type: Standard Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): 4A (DC) Voltage - Forward (Vf) (Max) @ If: 1V @ 200mA Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 3µs Current - Reverse Leakage @ Vr: 1nA @ 125V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SQ-MELF, B Supplier Device Package: B, SQ-MELF Operating Temperature - Junction: -65°C ~ 150°C	Paket: SQ-MELF, B	Lager6.648	-	4A (DC)	1V @ 200mA	Standard Recovery >500ns, > 200mA (Io)	3µs	1nA @ 125V	-	Surface Mount	SQ-MELF, B	B, SQ-MELF	-65°C ~ 150°C

APT15DQ120BG

Microsemi Corporation

DIODE GEN PURP 1.2KV 15A TO247

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1200V
Current - Average Rectified (Io): 15A
Voltage - Forward (Vf) (Max) @ If: 3.3V @ 15A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 240ns
Current - Reverse Leakage @ Vr: 100µA @ 1200V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247 [B]
Operating Temperature - Junction: -55°C ~ 175°C

Paket: TO-247-3

Lager31.800

1200V

15A

3.3V @ 15A

Fast Recovery =< 500ns, > 200mA (Io)

240ns

100µA @ 1200V

-

Through Hole

TO-247-3

TO-247 [B]

-55°C ~ 175°C

APT15DQ100BG

Microsemi Corporation

DIODE GEN PURP 1KV 15A TO247

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1000V
Current - Average Rectified (Io): 15A
Voltage - Forward (Vf) (Max) @ If: 3V @ 15A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 235ns
Current - Reverse Leakage @ Vr: 100µA @ 1000V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247 [B]
Operating Temperature - Junction: -55°C ~ 175°C

Paket: TO-247-3

Lager3.840

1000V

15A

3V @ 15A

Fast Recovery =< 500ns, > 200mA (Io)

235ns

100µA @ 1000V

-

Through Hole

TO-247-3

TO-247 [B]

-55°C ~ 175°C

APT15D120KG

Microsemi Corporation

DIODE GEN PURP 1.2KV 15A TO220

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1200V
Current - Average Rectified (Io): 15A
Voltage - Forward (Vf) (Max) @ If: 2.5V @ 15A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 260ns
Current - Reverse Leakage @ Vr: 250µA @ 1200V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220 [K]
Operating Temperature - Junction: -55°C ~ 175°C

Paket: TO-220-3

Lager6.176

1200V

15A

2.5V @ 15A

Fast Recovery =< 500ns, > 200mA (Io)

260ns

250µA @ 1200V

-

Through Hole

TO-220-3

TO-220 [K]

-55°C ~ 175°C

APT15DQ120KG

Microsemi Corporation

DIODE GEN PURP 1.2KV 15A TO220

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1200V
Current - Average Rectified (Io): 15A
Voltage - Forward (Vf) (Max) @ If: 3.3V @ 15A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 240ns
Current - Reverse Leakage @ Vr: 100µA @ 1200V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220 [K]
Operating Temperature - Junction: -55°C ~ 175°C

Paket: TO-220-2

Lager51.228

1200V

15A

3.3V @ 15A

Fast Recovery =< 500ns, > 200mA (Io)

240ns

100µA @ 1200V

-

Through Hole

TO-220-2

TO-220 [K]

-55°C ~ 175°C

APT15DQ100KG

Microsemi Corporation

DIODE GEN PURP 1KV 15A TO220

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1000V
Current - Average Rectified (Io): 15A
Voltage - Forward (Vf) (Max) @ If: 3V @ 15A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 235ns
Current - Reverse Leakage @ Vr: 100µA @ 1000V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220 [K]
Operating Temperature - Junction: -55°C ~ 175°C

Paket: TO-220-3

Lager9.024

1000V

15A

3V @ 15A

Fast Recovery =< 500ns, > 200mA (Io)

235ns

100µA @ 1000V

-

Through Hole

TO-220-3

TO-220 [K]

-55°C ~ 175°C

APTDF500U40G

Microsemi Corporation

DIODE MODULE 400V 500A LP4

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 500A
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 500A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 120ns
Current - Reverse Leakage @ Vr: 2.5mA @ 400V
Capacitance @ Vr, F: -
Mounting Type: Chassis Mount
Package / Case: LP4
Supplier Device Package: LP4
Operating Temperature - Junction: -

Paket: LP4

Lager7.056

400V

500A

1.5V @ 500A

Fast Recovery =< 500ns, > 200mA (Io)

120ns

2.5mA @ 400V

-

Chassis Mount

LP4

-

JANTX1N5712UR-1

Microsemi Corporation

DIODE SCHOTTKY 20V 75MA DO213AA

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 20V
Current - Average Rectified (Io): 75mA
Voltage - Forward (Vf) (Max) @ If: 1V @ 35mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 150nA @ 16V
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-213AA
Supplier Device Package: DO-213AA
Operating Temperature - Junction: -65°C ~ 150°C

Paket: DO-213AA

Lager4.688

20V

75mA

1V @ 35mA

Small Signal =< 200mA (Io), Any Speed

-

150nA @ 16V

2pF @ 0V, 1MHz

Surface Mount

DO-213AA

-65°C ~ 150°C

UES1302

Microsemi Corporation

DIODE GEN PURP 100V 6A AXIAL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 6A
Voltage - Forward (Vf) (Max) @ If: 925mV @ 6A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30ns
Current - Reverse Leakage @ Vr: 5µA @ 100V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: Axial
Supplier Device Package: Axial
Operating Temperature - Junction: -55°C ~ 175°C

Paket: Axial

Lager7.888

100V

6A

925mV @ 6A

Standard Recovery >500ns, > 200mA (Io)

30ns

5µA @ 100V

-

Through Hole

Axial

-55°C ~ 175°C

APT30SCD120S

Microsemi Corporation

DIODE SCHOTTKY 1.2KV 99A D3PAK

Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 1200V
Current - Average Rectified (Io): 99A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 30A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 600µA @ 1200V
Capacitance @ Vr, F: 2100pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Supplier Device Package: D3Pak
Operating Temperature - Junction: -55°C ~ 150°C

Paket: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

Lager5.616

1200V

99A (DC)

1.8V @ 30A

No Recovery Time > 500mA (Io)

0ns

600µA @ 1200V

2100pF @ 0V, 1MHz

Surface Mount

TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

D3Pak

-55°C ~ 150°C

UES1106

Microsemi Corporation

DIODE GEN PURP 400V 1A AXIAL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.25V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 10µA @ 400V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: A, Axial
Supplier Device Package: -
Operating Temperature - Junction: -55°C ~ 150°C

Paket: A, Axial

Lager6.804

400V

1A

1.25V @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

50ns

10µA @ 400V

-

Through Hole

A, Axial

-

-55°C ~ 150°C

UES1103

Microsemi Corporation

DIODE GEN PURP 150V 2.5A AXIAL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 150V
Current - Average Rectified (Io): 2.5A
Voltage - Forward (Vf) (Max) @ If: 975mV @ 2A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25ns
Current - Reverse Leakage @ Vr: 2µA @ 150V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: A, Axial
Supplier Device Package: -
Operating Temperature - Junction: 175°C (Max)

Paket: A, Axial

Lager5.184

150V

2.5A

975mV @ 2A

Fast Recovery =< 500ns, > 200mA (Io)

25ns

2µA @ 150V

-

Through Hole

A, Axial

-

175°C (Max)

JANTX1N6643US

Microsemi Corporation

DIODE GEN PURP 125V 300MA D5D

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 125V
Current - Average Rectified (Io): 300mA
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 100mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 6ns
Current - Reverse Leakage @ Vr: 50nA @ 20V
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: SQ-MELF, D
Supplier Device Package: D-5D
Operating Temperature - Junction: -65°C ~ 175°C

Paket: SQ-MELF, D

Lager6.516

125V

300mA

1.2V @ 100mA

Fast Recovery =< 500ns, > 200mA (Io)

6ns

50nA @ 20V

5pF @ 0V, 1MHz

Surface Mount

SQ-MELF, D

D-5D

-65°C ~ 175°C

1N5551US

Microsemi Corporation

DIODE GEN PURP 400V 3A D5B

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 9A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2µs
Current - Reverse Leakage @ Vr: 1µA @ 400V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: SQ-MELF, B
Supplier Device Package: D-5B
Operating Temperature - Junction: -65°C ~ 175°C

Paket: SQ-MELF, B

Lager7.664

400V

3A

1.2V @ 9A

Standard Recovery >500ns, > 200mA (Io)

2µs

1µA @ 400V

-

Surface Mount

SQ-MELF, B

D-5B

-65°C ~ 175°C

JAN1N5622

Microsemi Corporation

DIODE GEN PURP 1KV 1A AXIAL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1000V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 3A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2µs
Current - Reverse Leakage @ Vr: 500nA @ 1000V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: A, Axial
Supplier Device Package: -
Operating Temperature - Junction: -65°C ~ 200°C

Paket: A, Axial

Lager5.344

1000V

1A

1.3V @ 3A

Standard Recovery >500ns, > 200mA (Io)

2µs

500nA @ 1000V

-

Through Hole

A, Axial

-

-65°C ~ 200°C

1N6640US

Microsemi Corporation

DIODE GEN PURP 75V 300MA D5D

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 75V
Current - Average Rectified (Io): 300mA (DC)
Voltage - Forward (Vf) (Max) @ If: 1V @ 200mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4ns
Current - Reverse Leakage @ Vr: 100nA @ 50V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: SQ-MELF, D
Supplier Device Package: D-5D
Operating Temperature - Junction: -65°C ~ 175°C

Paket: SQ-MELF, D

Lager5.392

75V

300mA (DC)

1V @ 200mA

Fast Recovery =< 500ns, > 200mA (Io)

4ns

100nA @ 50V

-

Surface Mount

SQ-MELF, D

D-5D

-65°C ~ 175°C

1N5552

Microsemi Corporation

DIODE GEN PURP 600V 3A AXIAL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 9A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2µs
Current - Reverse Leakage @ Vr: 1µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: B, Axial
Supplier Device Package: -
Operating Temperature - Junction: -65°C ~ 175°C

Paket: B, Axial

Lager4.928

600V

3A

1.2V @ 9A

Standard Recovery >500ns, > 200mA (Io)

2µs

1µA @ 600V

-

Through Hole

B, Axial

-

-65°C ~ 175°C

JAN1N4942

Microsemi Corporation

DIODE GEN PURP 200V 1A AXIAL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150ns
Current - Reverse Leakage @ Vr: 1µA @ 200V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: A, Axial
Supplier Device Package: -
Operating Temperature - Junction: -65°C ~ 175°C

Paket: A, Axial

Lager6.416

200V

1A

1.3V @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

150ns

1µA @ 200V

-

Through Hole

A, Axial

-

-65°C ~ 175°C

1N3611

Microsemi Corporation

DIODE GEN PURP 200V 1A AXIAL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1µA @ 200V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: A, Axial
Supplier Device Package: -
Operating Temperature - Junction: -65°C ~ 175°C

Paket: A, Axial

Lager7.504

200V

1A

1.1V @ 1A

Standard Recovery >500ns, > 200mA (Io)

-

1µA @ 200V

-

Through Hole

A, Axial

-

-65°C ~ 175°C

JANTX1N4150-1

Microsemi Corporation

DIODE GEN PURP 50V 200MA DO35

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 200mA
Voltage - Forward (Vf) (Max) @ If: 1V @ 200mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4ns
Current - Reverse Leakage @ Vr: 100nA @ 50V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Supplier Device Package: DO-35
Operating Temperature - Junction: -65°C ~ 175°C

Paket: DO-204AH, DO-35, Axial

Lager6.816

50V

200mA

1V @ 200mA

Small Signal =< 200mA (Io), Any Speed

4ns

100nA @ 50V

-

Through Hole

DO-204AH, DO-35, Axial

DO-35

-65°C ~ 175°C

JAN1N914

Microsemi Corporation

DIODE GEN PURP 75V 200MA DO35

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 75V
Current - Average Rectified (Io): 200mA
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 50mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 20ns
Current - Reverse Leakage @ Vr: 500nA @ 75V
Capacitance @ Vr, F: 2.8pF @ 1.5V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Supplier Device Package: DO-35 (DO-204AH)
Operating Temperature - Junction: -65°C ~ 150°C

Paket: DO-204AH, DO-35, Axial

Lager6.480

75V

200mA

1.2V @ 50mA

Small Signal =< 200mA (Io), Any Speed

20ns

500nA @ 75V

2.8pF @ 1.5V, 1MHz

Through Hole

DO-204AH, DO-35, Axial

DO-35 (DO-204AH)

-65°C ~ 150°C

APT15D100KG

Microsemi Corporation

DIODE GEN PURP 1KV 15A TO220

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1000V
Current - Average Rectified (Io): 15A
Voltage - Forward (Vf) (Max) @ If: 2.3V @ 15A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 260ns
Current - Reverse Leakage @ Vr: 250µA @ 1000V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220 [K]
Operating Temperature - Junction: -55°C ~ 175°C

Paket: TO-220-3

Lager4.912

1000V

15A

2.3V @ 15A

Fast Recovery =< 500ns, > 200mA (Io)

260ns

250µA @ 1000V

-

Through Hole

TO-220-3

TO-220 [K]

-55°C ~ 175°C

1N4153-1

Microsemi Corporation

DIODE GEN PURP 50V 150MA DO35

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 150mA
Voltage - Forward (Vf) (Max) @ If: 880mV @ 20mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4ns
Current - Reverse Leakage @ Vr: 50nA @ 50V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Supplier Device Package: DO-35
Operating Temperature - Junction: -65°C ~ 175°C

Paket: DO-204AH, DO-35, Axial

Lager8.472

50V

150mA

880mV @ 20mA

Small Signal =< 200mA (Io), Any Speed

4ns

50nA @ 50V

-

Through Hole

DO-204AH, DO-35, Axial

DO-35

-65°C ~ 175°C

1N4150-1

Microsemi Corporation

DIODE GEN PURP 50V 200MA DO35

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 200mA
Voltage - Forward (Vf) (Max) @ If: 1V @ 200mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4ns
Current - Reverse Leakage @ Vr: 100nA @ 50V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Supplier Device Package: DO-35
Operating Temperature - Junction: -65°C ~ 175°C

Paket: DO-204AH, DO-35, Axial

Lager20.316

50V

200mA

1V @ 200mA

Small Signal =< 200mA (Io), Any Speed

4ns

100nA @ 50V

-

Through Hole

DO-204AH, DO-35, Axial

DO-35

-65°C ~ 175°C

APT15D60KG

Microsemi Corporation

DIODE GEN PURP 600V 15A TO220

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 15A
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 15A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 80ns
Current - Reverse Leakage @ Vr: 250µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220 [K]
Operating Temperature - Junction: -55°C ~ 175°C

Paket: TO-220-2

Lager15.696

600V

15A

1.8V @ 15A

Fast Recovery =< 500ns, > 200mA (Io)

80ns

250µA @ 600V

-

Through Hole

TO-220-2

TO-220 [K]

-55°C ~ 175°C

JAN1N4148-1

Microsemi Corporation

DIODE GEN PURP 75V 200MA DO35

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 75V
Current - Average Rectified (Io): 200mA
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 100mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 20ns
Current - Reverse Leakage @ Vr: 500nA @ 75V
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Supplier Device Package: DO-35
Operating Temperature - Junction: -65°C ~ 175°C

Paket: DO-204AH, DO-35, Axial

Lager294.348

75V

200mA

1.2V @ 100mA

Small Signal =< 200mA (Io), Any Speed

20ns

500nA @ 75V

4pF @ 0V, 1MHz

Through Hole

DO-204AH, DO-35, Axial

DO-35

-65°C ~ 175°C

APT15DQ60KG

Microsemi Corporation

DIODE GEN PURP 600V 15A TO220

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 15A
Voltage - Forward (Vf) (Max) @ If: 2.4V @ 15A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 19ns
Current - Reverse Leakage @ Vr: 25µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220 [K]
Operating Temperature - Junction: -55°C ~ 175°C

Paket: TO-220-2

Lager131.976

600V

15A

2.4V @ 15A

Fast Recovery =< 500ns, > 200mA (Io)

19ns

25µA @ 600V

-

Through Hole

TO-220-2

TO-220 [K]

-55°C ~ 175°C

JANTX1N1190

Microsemi Corporation

DIODE GEN PURP 600V 35A DO5

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 35A
Voltage - Forward (Vf) (Max) @ If: 1.4V @ 110A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Stud Mount
Package / Case: DO-203AB, DO-5, Stud
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 175°C

Paket: DO-203AB, DO-5, Stud

Lager4.960

600V

35A

1.4V @ 110A

Fast Recovery =< 500ns, > 200mA (Io)

-

10µA @ 600V

-

Stud Mount

DO-203AB, DO-5, Stud

DO-5

-65°C ~ 175°C

APTDF450U60G

Microsemi Corporation

DIODE MODULE 600V 500A LP4

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 500A
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 500A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 115ns
Current - Reverse Leakage @ Vr: 2.5mA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Chassis Mount
Package / Case: LP4
Supplier Device Package: LP4
Operating Temperature - Junction: -

Paket: LP4

Lager6.000

600V

500A

1.8V @ 500A

Fast Recovery =< 500ns, > 200mA (Io)

115ns

2.5mA @ 600V

-

Chassis Mount

LP4

-

APT30SCD120B

Microsemi Corporation

DIODE SCHOTTKY 1.2KV 99A

Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 1200V
Current - Average Rectified (Io): 99A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 30A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 600µA @ 1200V
Capacitance @ Vr, F: 2100pF @ 0V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-247-2
Supplier Device Package: TO-247
Operating Temperature - Junction: -55°C ~ 150°C

Paket: TO-247-2

Lager6.864

1200V

99A (DC)

1.8V @ 30A

No Recovery Time > 500mA (Io)

0ns

600µA @ 1200V

2100pF @ 0V, 1MHz

Through Hole

TO-247-2

TO-247

-55°C ~ 150°C

1N3595US

Microsemi Corporation

DIODE GEN PURP 4A B-MELF

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): 4A (DC)
Voltage - Forward (Vf) (Max) @ If: 1V @ 200mA
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3µs
Current - Reverse Leakage @ Vr: 1nA @ 125V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: SQ-MELF, B
Supplier Device Package: B, SQ-MELF
Operating Temperature - Junction: -65°C ~ 150°C

Paket: SQ-MELF, B

Lager6.648

-

4A (DC)

1V @ 200mA

Standard Recovery >500ns, > 200mA (Io)

3µs

1nA @ 125V

-

Surface Mount

SQ-MELF, B

B, SQ-MELF

-65°C ~ 150°C