Page 125 - Taiwan Semiconductor Corporation Produkte

Teilenummer	Hersteller	Beschreibung	Paket	Lager
BZD17C200P R3G	Taiwan Semiconductor Corporation	DIODE, ZENER, 200V, 800MW, %, SU Voltage - Zener (Nom) (Vz): 200V Tolerance: ±6% Power - Max: 800mW Impedance (Max) (Zzt): 750 Ohms Current - Reverse Leakage @ Vr: 1µA @ 150V Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: Sub SMA	Paket: DO-219AB	Lager4.848
2M180Z R0G	Taiwan Semiconductor Corporation	DIODE, ZENER, 180V, 2000MW, %, D Voltage - Zener (Nom) (Vz): 180V Tolerance: ±5% Power - Max: 2W Impedance (Max) (Zzt): 725 Ohms Current - Reverse Leakage @ Vr: 500nA @ 136.8V Voltage - Forward (Vf) (Max) @ If: - Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: DO-204AC, DO-15, Axial Supplier Device Package: DO-204AC (DO-15)	Paket: DO-204AC, DO-15, Axial	Lager5.024
BZD27C91P RHG	Taiwan Semiconductor Corporation	DIODE, ZENER, 91V, 1000MW, %, SU Voltage - Zener (Nom) (Vz): 90.5V Tolerance: ±6.07% Power - Max: 1W Impedance (Max) (Zzt): 200 Ohms Current - Reverse Leakage @ Vr: 1µA @ 68V Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: Sub SMA	Paket: DO-219AB	Lager5.792
1SMA5928HR3G	Taiwan Semiconductor Corporation	DIODE, ZENER, 13V, 1500MW, 5%, A Voltage - Zener (Nom) (Vz): 13V Tolerance: ±5% Power - Max: 1.5W Impedance (Max) (Zzt): 7 Ohms Current - Reverse Leakage @ Vr: 500nA @ 9.9V Voltage - Forward (Vf) (Max) @ If: - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA)	Paket: DO-214AC, SMA	Lager3.232
TSZU52C6V8 RGG	Taiwan Semiconductor Corporation	DIODE, ZENER, 6.8V, 150MW, 5%, 0 Voltage - Zener (Nom) (Vz): 6.8V Tolerance: ±5% Power - Max: 150mW Impedance (Max) (Zzt): 8 Ohms Current - Reverse Leakage @ Vr: 100nA @ 3V Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA Operating Temperature: -55°C ~ 125°C (TJ) Mounting Type: Surface Mount Package / Case: 0201 (0603 Metric) Supplier Device Package: 0603	Paket: 0201 (0603 Metric)	Lager2.288
BZX585B9V1 RSG	Taiwan Semiconductor Corporation	DIODE, ZENER, 9.1V, 200MW, 2%, S Voltage - Zener (Nom) (Vz): 9.1V Tolerance: ±2% Power - Max: 200mW Impedance (Max) (Zzt): 15 Ohms Current - Reverse Leakage @ Vr: 450nA @ 6V Voltage - Forward (Vf) (Max) @ If: - Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-79, SOD-523 Supplier Device Package: SOD-523F	Paket: SC-79, SOD-523	Lager4.336
BZX585B3V6 RSG	Taiwan Semiconductor Corporation	DIODE, ZENER, 3.6V, 200MW, 2%, S Voltage - Zener (Nom) (Vz): 3.6V Tolerance: ±2% Power - Max: 200mW Impedance (Max) (Zzt): 90 Ohms Current - Reverse Leakage @ Vr: 4.5µA @ 1V Voltage - Forward (Vf) (Max) @ If: - Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-79, SOD-523 Supplier Device Package: SOD-523F	Paket: SC-79, SOD-523	Lager5.136
BZT55C68 L1G	Taiwan Semiconductor Corporation	DIODE, ZENER, 68V, 500MW, 5%, QM Voltage - Zener (Nom) (Vz): 68V Tolerance: ±5% Power - Max: 500mW Impedance (Max) (Zzt): 160 Ohms Current - Reverse Leakage @ Vr: 100nA @ 51V Voltage - Forward (Vf) (Max) @ If: 1V @ 10mA Operating Temperature: -65°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: SOD-80 Variant Supplier Device Package: Mini MELF	Paket: SOD-80 Variant	Lager5.232
MTZJ3V9SA R0G	Taiwan Semiconductor Corporation	DIODE, ZENER, 3.88V, 500MW, %, D Voltage - Zener (Nom) (Vz): 3.88V Tolerance: ±2% Power - Max: 500mW Impedance (Max) (Zzt): 100 Ohms Current - Reverse Leakage @ Vr: 5µA @ 1V Voltage - Forward (Vf) (Max) @ If: - Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: DO-204AG, DO-34, Axial Supplier Device Package: DO-34	Paket: DO-204AG, DO-34, Axial	Lager6.288
BZT55B7V5 L0G	Taiwan Semiconductor Corporation	DIODE, ZENER, 7.5V, 500MW, 2%, Q Voltage - Zener (Nom) (Vz): 7.5V Tolerance: ±2% Power - Max: 500mW Impedance (Max) (Zzt): 7 Ohms Current - Reverse Leakage @ Vr: 100nA @ 5V Voltage - Forward (Vf) (Max) @ If: 1V @ 10mA Operating Temperature: -65°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: SOD-80 Variant Supplier Device Package: Mini MELF	Paket: SOD-80 Variant	Lager2.608
BZX79B30 A0G	Taiwan Semiconductor Corporation	DIODE, ZENER, 30V, 500MW, 2%, DO Voltage - Zener (Nom) (Vz): 30V Tolerance: ±2% Power - Max: 500mW Impedance (Max) (Zzt): 80 Ohms Current - Reverse Leakage @ Vr: 21mA @ 50mV Voltage - Forward (Vf) (Max) @ If: 1.5V @ 100mA Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: DO-204AH, DO-35, Axial Supplier Device Package: DO-35	Paket: DO-204AH, DO-35, Axial	Lager3.760
TS10P07GHC2G	Taiwan Semiconductor Corporation	BRIDGE RECTIFIER, STANDARD, 10A, Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 1000V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 10A Current - Reverse Leakage @ Vr: 10µA @ 1000V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-SIP, TS-6P Supplier Device Package: TS-6P	Paket: 4-SIP, TS-6P	Lager2.816
MBS4 RCG	Taiwan Semiconductor Corporation	BRIDGE RECTIFIER, STANDARD, 0.8A Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 400V Current - Average Rectified (Io): 800mA Voltage - Forward (Vf) (Max) @ If: 1V @ 2A Current - Reverse Leakage @ Vr: 5µA @ 400V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 4-BESOP (0.173", 4.40mm Width) Supplier Device Package: MBS	Paket: 4-BESOP (0.173", 4.40mm Width)	Lager7.952
TS2937CM50 RNG	Taiwan Semiconductor Corporation	IC REG LINEAR 5V 500MA Output Configuration: - Output Type: - Number of Regulators: 1 Voltage - Input (Max): - Voltage - Output (Min/Fixed): - Voltage - Output (Max): - Voltage Dropout (Max): - Current - Output: 500mA Current - Quiescent (Iq): - Current - Supply (Max): - PSRR: - Control Features: - Protection Features: - Operating Temperature: -40°C ~ 125°C (TJ) Mounting Type: - Package / Case: - Supplier Device Package: -	Paket: -	Lager6.624
TS432ACT A3G	Taiwan Semiconductor Corporation	VOLTAGE REFERENCE, PROGRAMMABLE, Reference Type: - Output Type: - Voltage - Output (Min/Fixed): - Voltage - Output (Max): - Current - Output: - Tolerance: - Temperature Coefficient: - Noise - 0.1Hz to 10Hz: - Noise - 10Hz to 10kHz: - Voltage - Input: - Current - Supply: - Current - Cathode: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	Paket: -	Lager2.768
TSM500N15CS	Taiwan Semiconductor Corporation	150V, 11A, SINGLE N-CHANNEL POWE FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150 V Current - Continuous Drain (Id) @ 25°C: 4A (Ta), 11A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1123 pF @ 80 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 12.7W (Ta) Rds On (Max) @ Id, Vgs: 50mOhm @ 4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOP Package / Case: 8-SOIC (0.154", 3.90mm Width)	Paket: -	Request a Quote
ES1DVH	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 1A DO214AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 920 mV @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 15 ns Current - Reverse Leakage @ Vr: 5 µA @ 200 V Capacitance @ Vr, F: 17pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C	Paket: -	Lager45.000
ES2GFL	Taiwan Semiconductor Corporation	35NS, 2A, 400V, SUPER FAST RECOV Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Current - Reverse Leakage @ Vr: 5 µA @ 400 V Capacitance @ Vr, F: 15pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123F Supplier Device Package: SOD-123F Operating Temperature - Junction: -55°C ~ 150°C	Paket: -	Lager29.880
BZT52B47S	Taiwan Semiconductor Corporation	SOD-323F, 200MW, 2%, SMALL SIGNA Voltage - Zener (Nom) (Vz): 47 V Tolerance: ±2% Power - Max: 200 mW Impedance (Max) (Zzt): 170 Ohms Current - Reverse Leakage @ Vr: 45 nA @ 33 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-90, SOD-323F Supplier Device Package: SOD-323F	Paket: -	Request a Quote
1PGSMB5942HR5G	Taiwan Semiconductor Corporation	DIODE ZENER 51V 3W DO214AA Voltage - Zener (Nom) (Vz): 51 V Tolerance: ±5% Power - Max: 3 W Impedance (Max) (Zzt): 70 Ohms Current - Reverse Leakage @ Vr: 1 µA @ 38.8 V Voltage - Forward (Vf) (Max) @ If: - Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: DO-214AA (SMB)	Paket: -	Lager6.399
MBR16150	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 150V 16A TO220AC Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 150 V Current - Average Rectified (Io): 16A Voltage - Forward (Vf) (Max) @ If: 950 mV @ 16 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100 µA @ 150 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220AC Operating Temperature - Junction: -55°C ~ 150°C	Paket: -	Lager3.000
TS2937CP33	Taiwan Semiconductor Corporation	0.5A 3.3V ULTRA LOW DROPOUT VOLT Output Configuration: Positive Output Type: Fixed Number of Regulators: 1 Voltage - Input (Max): 26V Voltage - Output (Min/Fixed): 3.3V Voltage - Output (Max): - Voltage Dropout (Max): 0.7V @ 500mA Current - Output: 500mA Current - Quiescent (Iq): - Current - Supply (Max): 25 mA PSRR: - Control Features: Current Limit Protection Features: Over Current, Over Temperature, Over Voltage Operating Temperature: -40°C ~ 125°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63 Supplier Device Package: TO-252 (DPAK)	Paket: -	Request a Quote
SF43GH	Taiwan Semiconductor Corporation	DIODE GEN PURP 150V 4A DO201AD Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 150 V Current - Average Rectified (Io): 4A Voltage - Forward (Vf) (Max) @ If: 1 V @ 4 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Current - Reverse Leakage @ Vr: 5 µA @ 150 V Capacitance @ Vr, F: 100pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -55°C ~ 150°C	Paket: -	Request a Quote
SF48GH	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 4A DO201AD Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 4A Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 4 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Current - Reverse Leakage @ Vr: 5 µA @ 600 V Capacitance @ Vr, F: 80pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -55°C ~ 150°C	Paket: -	Lager7.500
SD103CM3-RRG	Taiwan Semiconductor Corporation	0.35A, 20V, SCHOTTKY RECTIFIER Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 20 V Current - Average Rectified (Io): 350mA Voltage - Forward (Vf) (Max) @ If: 600 mV @ 200 mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5 µA @ 10 V Capacitance @ Vr, F: 50pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: SC-90, SOD-323F Supplier Device Package: SOD-323F Operating Temperature - Junction: -55°C ~ 125°C	Paket: -	Lager9.000
HS2FH	Taiwan Semiconductor Corporation	50NS, 2A, 300V, HIGH EFFICIENT R Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 300 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Current - Reverse Leakage @ Vr: 5 µA @ 300 V Capacitance @ Vr, F: 50pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 150°C	Paket: -	Lager18.000
TSM70N380CP	Taiwan Semiconductor Corporation	700V, 11A, SINGLE N-CHANNEL POWE FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 700 V Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 981 pF @ 100 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 125W (Tc) Rds On (Max) @ Id, Vgs: 380mOhm @ 3.3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252 (DPAK) Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Paket: -	Request a Quote
SRA2040	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 40V 20A TO220AC Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40 V Current - Average Rectified (Io): 20A Voltage - Forward (Vf) (Max) @ If: 550 mV @ 20 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500 µA @ 40 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220AC Operating Temperature - Junction: -55°C ~ 125°C	Paket: -	Request a Quote