Taiwan Semiconductor Corporation Produkte

2M19Z A0G

Taiwan Semiconductor Corporation

DIODE, ZENER, 19V, 2000MW, %, DO

• Voltage - Zener (Nom) (Vz): 19V
• Tolerance: ±5%
• Power - Max: 2W
• Impedance (Max) (Zzt): 11 Ohms
• Current - Reverse Leakage @ Vr: 500nA @ 14.4V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-204AC, DO-15, Axial
• Supplier Device Package: DO-204AC (DO-15)

Paket: DO-204AC, DO-15, Axial

BZD27C24PHRFG

Taiwan Semiconductor Corporation

DIODE, ZENER, 24V, 1000MW, %, AE

• Voltage - Zener (Nom) (Vz): 24.2V
• Tolerance: ±5.78%
• Power - Max: 1W
• Impedance (Max) (Zzt): 15 Ohms
• Current - Reverse Leakage @ Vr: 1µA @ 18V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-219AB
• Supplier Device Package: Sub SMA

Paket: DO-219AB

BZD27C130P MQG

Taiwan Semiconductor Corporation

DIODE, ZENER, 130V, 1000MW, %, S

• Voltage - Zener (Nom) (Vz): 132.5V
• Tolerance: ±6.41%
• Power - Max: 1W
• Impedance (Max) (Zzt): 300 Ohms
• Current - Reverse Leakage @ Vr: 1µA @ 100V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-219AB
• Supplier Device Package: Sub SMA

Paket: DO-219AB

1N4760AHA0G

Taiwan Semiconductor Corporation

DIODE, ZENER, 68V, 1000MW, 5%, A

• Voltage - Zener (Nom) (Vz): 68V
• Tolerance: ±5%
• Power - Max: 1W
• Impedance (Max) (Zzt): 150 Ohms
• Current - Reverse Leakage @ Vr: 5µA @ 51.7V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-204AL (DO-41)

Paket: DO-204AL, DO-41, Axial

BZD17C36P RFG

Taiwan Semiconductor Corporation

DIODE, ZENER, 36V, 800MW, %, SUB

• Voltage - Zener (Nom) (Vz): 36V
• Tolerance: ±5.55%
• Power - Max: 800mW
• Impedance (Max) (Zzt): 40 Ohms
• Current - Reverse Leakage @ Vr: 1µA @ 27V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-219AB
• Supplier Device Package: Sub SMA

Paket: DO-219AB

ZM4728A L0G

Taiwan Semiconductor Corporation

DIODE, ZENER, 3.3V, 1000MW, 5%,

• Voltage - Zener (Nom) (Vz): 3.3V
• Tolerance: ±5%
• Power - Max: 1W
• Impedance (Max) (Zzt): 10 Ohms
• Current - Reverse Leakage @ Vr: 100µA @ 1V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-213AB, MELF
• Supplier Device Package: MELF

Paket: DO-213AB, MELF

BZT55B36 L0G

Taiwan Semiconductor Corporation

DIODE, ZENER, 36V, 500MW, 2%, QM

• Voltage - Zener (Nom) (Vz): 36V
• Tolerance: ±2%
• Power - Max: 500mW
• Impedance (Max) (Zzt): 80 Ohms
• Current - Reverse Leakage @ Vr: 100nA @ 27V
• Voltage - Forward (Vf) (Max) @ If: 1V @ 10mA
• Operating Temperature: -65°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SOD-80 Variant
• Supplier Device Package: Mini MELF

Paket: SOD-80 Variant

BZX79B9V1 A0G

Taiwan Semiconductor Corporation

DIODE, ZENER, 9.1V, 500MW, 2%, D

• Voltage - Zener (Nom) (Vz): 9.1V
• Tolerance: ±2%
• Power - Max: 500mW
• Impedance (Max) (Zzt): 15 Ohms
• Current - Reverse Leakage @ Vr: 6mA @ 500mV
• Voltage - Forward (Vf) (Max) @ If: 1.5V @ 100mA
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-204AH, DO-35, Axial
• Supplier Device Package: DO-35

Paket: DO-204AH, DO-35, Axial

BZX55B43 A0G

Taiwan Semiconductor Corporation

DIODE, ZENER, 43V, 500MW, 2%, DO

• Voltage - Zener (Nom) (Vz): 43V
• Tolerance: ±2%
• Power - Max: 500mW
• Impedance (Max) (Zzt): 90 Ohms
• Current - Reverse Leakage @ Vr: 100nA @ 32V
• Voltage - Forward (Vf) (Max) @ If: 1V @ 100mA
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-204AH, DO-35, Axial
• Supplier Device Package: DO-35

Paket: DO-204AH, DO-35, Axial

BZV55C27 L0G

Taiwan Semiconductor Corporation

DIODE, ZENER, 27V, 500MW, 5%, MM

• Voltage - Zener (Nom) (Vz): 27V
• Tolerance: ±5%
• Power - Max: 500mW
• Impedance (Max) (Zzt): 80 Ohms
• Current - Reverse Leakage @ Vr: 100nA @ 20V
• Voltage - Forward (Vf) (Max) @ If: 1V @ 10mA
• Operating Temperature: -65°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-213AC, MINI-MELF, SOD-80
• Supplier Device Package: Mini MELF

Paket: DO-213AC, MINI-MELF, SOD-80

GBU404 D2G

Taiwan Semiconductor Corporation

BRIDGE RECTIFIER, STANDARD, 4A,

• Diode Type: Single Phase
• Technology: Standard
• Voltage - Peak Reverse (Max): 400V
• Current - Average Rectified (Io): 4A
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 4A
• Current - Reverse Leakage @ Vr: 5µA @ 400V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: 4-SIP, GBU
• Supplier Device Package: GBU

Paket: 4-SIP, GBU

TS2596CM5 RNG

Taiwan Semiconductor Corporation

SWITCHING REGULATOR, DC-DC, BUCK

• Function: Step-Down
• Output Configuration: Positive
• Topology: Buck
• Output Type: Adjustable
• Number of Outputs: 1
• Voltage - Input (Min): 4.5V
• Voltage - Input (Max): 40V
• Voltage - Output (Min/Fixed): 1.23V
• Voltage - Output (Max): 38.5V
• Current - Output: 3A
• Frequency - Switching: 150kHz
• Synchronous Rectifier: No
• Operating Temperature: -40°C ~ 125°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-263-6, D²Pak (5 Leads + Tab), TO-263BA
• Supplier Device Package: TO-263-5, D2PAK

Paket: TO-263-6, D²Pak (5 Leads + Tab), TO-263BA

TSPB5H100S

Taiwan Semiconductor Corporation

DIODE SCHOTTKY 100V 5A SMPC4.0

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 100 V
• Current - Average Rectified (Io): 5A
• Voltage - Forward (Vf) (Max) @ If: 660 mV @ 5 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 150 µA @ 100 V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: TO-277, 3-PowerDFN
• Supplier Device Package: SMPC4.0
• Operating Temperature - Junction: -55°C ~ 150°C

Paket: -

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HS5A

Taiwan Semiconductor Corporation

DIODE GEN PURP 50V 5A DO214AB

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 50 V
• Current - Average Rectified (Io): 5A
• Voltage - Forward (Vf) (Max) @ If: 1 V @ 5 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 50 ns
• Current - Reverse Leakage @ Vr: 10 µA @ 50 V
• Capacitance @ Vr, F: 80pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-214AB, SMC
• Supplier Device Package: DO-214AB (SMC)
• Operating Temperature - Junction: -55°C ~ 150°C

Paket: -

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MBRF30L120CT

Taiwan Semiconductor Corporation

DIODE ARR SCHOTT 120V ITO220AB

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 120 V
• Current - Average Rectified (Io) (per Diode): 30A
• Voltage - Forward (Vf) (Max) @ If: 950 mV @ 30 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 20 mA @ 120 V
• Operating Temperature - Junction: -55°C ~ 150°C
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack, Isolated Tab
• Supplier Device Package: ITO-220AB

Paket: -

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DBLS159GH

Taiwan Semiconductor Corporation

BRIDGE RECT 1P 1.4KV 1.5A DBLS

• Diode Type: Single Phase
• Technology: Standard
• Voltage - Peak Reverse (Max): 1.4 kV
• Current - Average Rectified (Io): 1.5 A
• Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1.5 A
• Current - Reverse Leakage @ Vr: 2 µA @ 1400 V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 4-SMD, Gull Wing
• Supplier Device Package: DBLS

Paket: -

BZY55C6V8-RBG

Taiwan Semiconductor Corporation

DIODE ZENER 6.8V 500MW 0805

• Voltage - Zener (Nom) (Vz): 6.8 V
• Tolerance: ±5%
• Power - Max: 500 mW
• Impedance (Max) (Zzt): 8 Ohms
• Current - Reverse Leakage @ Vr: 100 nA @ 3 V
• Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 mA
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 0805 (2012 Metric)
• Supplier Device Package: 0805

Paket: -

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BZV55B43

Taiwan Semiconductor Corporation

MMELF, 500MW, 2%, SMALL SIGNAL Z

• Voltage - Zener (Nom) (Vz): 43 V
• Tolerance: ±2%
• Power - Max: 500 mW
• Impedance (Max) (Zzt): 90 Ohms
• Current - Reverse Leakage @ Vr: 100 nA @ 32 V
• Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
• Operating Temperature: -65°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-213AC, MINI-MELF, SOD-80
• Supplier Device Package: Mini MELF

Paket: -

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HERA807GH

Taiwan Semiconductor Corporation

80NS, 8A, 800V, HIGH EFFICIENT R

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 800 V
• Current - Average Rectified (Io): 8A
• Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 80 ns
• Current - Reverse Leakage @ Vr: 10 µA @ 800 V
• Capacitance @ Vr, F: 55pF @ 4V, 1MHz
• Mounting Type: Through Hole
• Package / Case: TO-220-2
• Supplier Device Package: TO-220AC
• Operating Temperature - Junction: -55°C ~ 150°C

Paket: -

SK310AH

Taiwan Semiconductor Corporation

DIODE SCHOTTKY 100V 3A DO214AC

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 100 V
• Current - Average Rectified (Io): 3A
• Voltage - Forward (Vf) (Max) @ If: 850 mV @ 3 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 100 µA @ 100 V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: DO-214AC, SMA
• Supplier Device Package: DO-214AC (SMA)
• Operating Temperature - Junction: -55°C ~ 150°C

Paket: -

TS2940CZ50

Taiwan Semiconductor Corporation

1A 5V ULTRA LOW DROPOUT VOLTAGE

• Output Configuration: Positive
• Output Type: Fixed
• Number of Regulators: 1
• Voltage - Input (Max): 26V
• Voltage - Output (Min/Fixed): 5V
• Voltage - Output (Max): -
• Voltage Dropout (Max): 0.8V @ 800mA
• Current - Output: 1A
• Current - Quiescent (Iq): 15 mA
• Current - Supply (Max): 110 mA
• PSRR: -
• Control Features: Current Limit
• Protection Features: Over Current, Over Temperature, Over Voltage
• Operating Temperature: -40°C ~ 125°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Supplier Device Package: TO-220

Paket: -

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BZD27C180PW

Taiwan Semiconductor Corporation

DIODE ZENER 180V 1W SOD123W

• Voltage - Zener (Nom) (Vz): 180 V
• Tolerance: ±5%
• Power - Max: 1 W
• Impedance (Max) (Zzt): 450 Ohms
• Current - Reverse Leakage @ Vr: 1 µA @ 130 V
• Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SOD-123W
• Supplier Device Package: SOD-123W

Paket: -

BZT52B3V3

Taiwan Semiconductor Corporation

SOD-123F, 500MW, 2%, SMALL SIGNA

• Voltage - Zener (Nom) (Vz): 3.3 V
• Tolerance: ±2%
• Power - Max: 500 mW
• Impedance (Max) (Zzt): 95 Ohms
• Current - Reverse Leakage @ Vr: 4.5 µA @ 1 V
• Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SOD-123F
• Supplier Device Package: SOD-123F

Paket: -

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1PGSMA4749-R3G

Taiwan Semiconductor Corporation

DIODE ZENER 24V 1.25W DO214AC

• Voltage - Zener (Nom) (Vz): 24 V
• Tolerance: ±5%
• Power - Max: 1.25 W
• Impedance (Max) (Zzt): 25 Ohms
• Current - Reverse Leakage @ Vr: 1 µA @ 18.2 V
• Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AC, SMA
• Supplier Device Package: DO-214AC (SMA)

Paket: -

KBP207G-C2

Taiwan Semiconductor Corporation

BRIDGE RECT 1PHASE 1KV 2A KBP

• Diode Type: Single Phase
• Technology: Standard
• Voltage - Peak Reverse (Max): 1 kV
• Current - Average Rectified (Io): 2 A
• Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 2 A
• Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: 4-SIP, KBP
• Supplier Device Package: KBP

Paket: -

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BSS84W-RFG

Taiwan Semiconductor Corporation

-60, -0.14, SINGLE P-CHANNEL

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60 V
• Current - Continuous Drain (Id) @ 25°C: 140mA (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 1.9 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 37 pF @ 30 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 298mW (Ta)
• Rds On (Max) @ Id, Vgs: 8Ohm @ 140mA, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: SOT-323
• Package / Case: SC-70, SOT-323

Paket: -

MBRF2545CTH

Taiwan Semiconductor Corporation

DIODE ARR SCHOT 45V 25A ITO220AB

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 45 V
• Current - Average Rectified (Io) (per Diode): 25A
• Voltage - Forward (Vf) (Max) @ If: 750 mV @ 25 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 2 mA @ 45 V
• Operating Temperature - Junction: -55°C ~ 150°C
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack, Isolated Tab
• Supplier Device Package: ITO-220AB

Paket: -

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1N4935GH

Taiwan Semiconductor Corporation

DIODE GEN PURP 200V 1A DO204AL

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 200 V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 200 ns
• Current - Reverse Leakage @ Vr: 5 µA @ 200 V
• Capacitance @ Vr, F: 10pF @ 4V, 1MHz
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-204AL (DO-41)
• Operating Temperature - Junction: -55°C ~ 150°C

Paket: -

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