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Taiwan Semiconductor Corporation Produkte

Aufzeichnungen 4.299
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BZD27C15P R3G
Taiwan Semiconductor Corporation

DIODE, ZENER, 15V, 1000MW, %, SU

  • Voltage - Zener (Nom) (Vz): 14.7V
  • Tolerance: ±6.12%
  • Power - Max: 1W
  • Impedance (Max) (Zzt): 10 Ohms
  • Current - Reverse Leakage @ Vr: 1µA @ 11V
  • Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: DO-219AB
  • Supplier Device Package: Sub SMA
Paket: DO-219AB
Lager7.120
BZD27C16PHRHG
Taiwan Semiconductor Corporation

DIODE, ZENER, 16V, 1000MW, %, AE

  • Voltage - Zener (Nom) (Vz): 16.2V
  • Tolerance: ±5.55%
  • Power - Max: 1W
  • Impedance (Max) (Zzt): 15 Ohms
  • Current - Reverse Leakage @ Vr: 1µA @ 12V
  • Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: DO-219AB
  • Supplier Device Package: Sub SMA
Paket: DO-219AB
Lager3.792
GBLA01HD2G
Taiwan Semiconductor Corporation

BRIDGE RECTIFIER, STANDARD, 4A,

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 100V
  • Current - Average Rectified (Io): 4A
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 4A
  • Current - Reverse Leakage @ Vr: 5µA @ 100V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GBL
  • Supplier Device Package: GBL
Paket: 4-SIP, GBL
Lager7.568
DBLS202GHRDG
Taiwan Semiconductor Corporation

BRIDGE RECTIFIER, STANDARD, 2A,

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 100V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 1.15V @ 2A
  • Current - Reverse Leakage @ Vr: 2µA @ 100V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 4-SMD, Gull Wing
  • Supplier Device Package: DBLS
Paket: 4-SMD, Gull Wing
Lager4.800
TPC817D C9G
Taiwan Semiconductor Corporation

OPTOISO 5KV TRANS 4DIP

  • Number of Channels: 1
  • Voltage - Isolation: 5000Vrms
  • Current Transfer Ratio (Min): 300% @ 5mA
  • Current Transfer Ratio (Max): 600% @ 5mA
  • Turn On / Turn Off Time (Typ): -
  • Rise / Fall Time (Typ): 4µs, 3µs
  • Input Type: DC
  • Output Type: Transistor
  • Voltage - Output (Max): 80V
  • Current - Output / Channel: 50mA
  • Voltage - Forward (Vf) (Typ): 1.2V
  • Current - DC Forward (If) (Max): 50mA
  • Vce Saturation (Max): 200mV
  • Operating Temperature: -40°C ~ 100°C
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
Paket: -
Lager7.218
TS4448
Taiwan Semiconductor Corporation

1005, 100V, 0.125A, SWITCHING DI

  • Diode Type: -
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io): -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: -
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
  • Operating Temperature - Junction: -
Paket: -
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MBRF15100CT-Y
Taiwan Semiconductor Corporation

DIODE ARR SCHOTT 100V ITO220AB

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 100 V
  • Current - Average Rectified (Io) (per Diode): 15A
  • Voltage - Forward (Vf) (Max) @ If: 950 mV @ 15 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 100 µA @ 100 V
  • Operating Temperature - Junction: -55°C ~ 150°C
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 Full Pack, Isolated Tab
  • Supplier Device Package: ITO-220AB
Paket: -
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BZD27C100PH
Taiwan Semiconductor Corporation

SUB SMA, 1000MW, 6%, ZENER DIODE

  • Voltage - Zener (Nom) (Vz): 100 V
  • Tolerance: ±6%
  • Power - Max: 1 W
  • Impedance (Max) (Zzt): 200 Ohms
  • Current - Reverse Leakage @ Vr: 1 µA @ 75 V
  • Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOD-123
  • Supplier Device Package: Sub SMA
Paket: -
Request a Quote
MBR60200PT-C0
Taiwan Semiconductor Corporation

DIODE

  • Diode Type: -
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io): -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: -
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
  • Operating Temperature - Junction: -
Paket: -
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TSM5055DCR-RLG
Taiwan Semiconductor Corporation

MOSFET 2N-CH 30V 107A 8DFN

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 38A (Tc), 20A (Ta), 107A (Tc)
  • Rds On (Max) @ Id, Vgs: 11.7mOhm @ 10A, 10V, 3.6mOhm @ 20A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 9.3nC @ 10V, 49nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 555pF @ 15V, 2550pF @ 15V
  • Power - Max: 2.2W (Ta), 30W (Tc), 2.4W (Ta), 69W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerTDFN
  • Supplier Device Package: 8-PDFN (5x6)
Paket: -
Lager15.000
MUR420H
Taiwan Semiconductor Corporation

DIODE GEN PURP 200V 4A DO201AD

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200 V
  • Current - Average Rectified (Io): 4A
  • Voltage - Forward (Vf) (Max) @ If: 890 mV @ 4 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 25 ns
  • Current - Reverse Leakage @ Vr: 5 µA @ 200 V
  • Capacitance @ Vr, F: 65pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-201AD, Axial
  • Supplier Device Package: DO-201AD
  • Operating Temperature - Junction: -55°C ~ 175°C
Paket: -
Lager7.500
BZX584B4V7-RSG
Taiwan Semiconductor Corporation

SOD-523F, 150MW, 2%, SMALL SIGNA

  • Voltage - Zener (Nom) (Vz): 4.7 V
  • Tolerance: ±2%
  • Power - Max: 150 mW
  • Impedance (Max) (Zzt): 80 Ohms
  • Current - Reverse Leakage @ Vr: 3 µA @ 2 V
  • Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-79, SOD-523
  • Supplier Device Package: SOD-523F
Paket: -
Lager20.340
BZS55C6V2
Taiwan Semiconductor Corporation

1206 (CERAMICS), 500MW, 5%, SMAL

  • Voltage - Zener (Nom) (Vz): 6.2 V
  • Tolerance: ±5%
  • Power - Max: 500 mW
  • Impedance (Max) (Zzt): 10 Ohms
  • Current - Reverse Leakage @ Vr: 100 nA @ 2 V
  • Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 mA
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 1206 (3216 Metric)
  • Supplier Device Package: 1206
Paket: -
Request a Quote
HERAF808GH
Taiwan Semiconductor Corporation

80NS, 8A, 1000V, HIGH EFFICIENT

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1000 V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 80 ns
  • Current - Reverse Leakage @ Vr: 10 µA @ 1 kV
  • Capacitance @ Vr, F: 60pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2 Full Pack
  • Supplier Device Package: ITO-220AC
  • Operating Temperature - Junction: -55°C ~ 150°C
Paket: -
Lager3.000
BZX79B3V3
Taiwan Semiconductor Corporation

DO-35, 500MW, 2%, SMALL SIGNAL Z

  • Voltage - Zener (Nom) (Vz): 3.3 V
  • Tolerance: ±2%
  • Power - Max: 500 mW
  • Impedance (Max) (Zzt): 95 Ohms
  • Current - Reverse Leakage @ Vr: 25 µA @ 1 V
  • Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 100 mA
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: DO-204AH, DO-35, Axial
  • Supplier Device Package: DO-35
Paket: -
Request a Quote
1SMA5930
Taiwan Semiconductor Corporation

DIODE ZENER 16V 1.5W DO214AC

  • Voltage - Zener (Nom) (Vz): 16 V
  • Tolerance: ±5%
  • Power - Max: 1.5 W
  • Impedance (Max) (Zzt): 10 Ohms
  • Current - Reverse Leakage @ Vr: 500 nA @ 12.2 V
  • Voltage - Forward (Vf) (Max) @ If: -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AC, SMA
  • Supplier Device Package: DO-214AC (SMA)
Paket: -
Request a Quote
1SMA5929
Taiwan Semiconductor Corporation

DIODE ZENER 15V 1.5W DO214AC

  • Voltage - Zener (Nom) (Vz): 15 V
  • Tolerance: ±5%
  • Power - Max: 1.5 W
  • Impedance (Max) (Zzt): 9 Ohms
  • Current - Reverse Leakage @ Vr: 500 nA @ 11.4 V
  • Voltage - Forward (Vf) (Max) @ If: -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AC, SMA
  • Supplier Device Package: DO-214AC (SMA)
Paket: -
Lager19.440
PUUP10J
Taiwan Semiconductor Corporation

25NS, 10A, 600V, ULTRA FAST RECO

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 10A
  • Voltage - Forward (Vf) (Max) @ If: 2 V @ 10 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 26 ns
  • Current - Reverse Leakage @ Vr: 5 µA @ 600 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-277, 3-PowerDFN
  • Supplier Device Package: TO-277A (SMPC)
  • Operating Temperature - Junction: -55°C ~ 150°C
Paket: -
Lager17.895
TSM500N15CS-RLG
Taiwan Semiconductor Corporation

150V, 11A, SINGLE N-CHANNEL POWE

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 150 V
  • Current - Continuous Drain (Id) @ 25°C: 4A (Ta), 11A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 20.5 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1123 pF @ 80 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 12.7W (Ta)
  • Rds On (Max) @ Id, Vgs: 50mOhm @ 4A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SOP
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
Paket: -
Lager2.040
MBRAD15200DH
Taiwan Semiconductor Corporation

DIODE ARR SCHOTT 200V THINDPAK

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 200 V
  • Current - Average Rectified (Io) (per Diode): 15A
  • Voltage - Forward (Vf) (Max) @ If: 950 mV @ 7.5 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 10 µA @ 150 V
  • Operating Temperature - Junction: -55°C ~ 150°C
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
  • Supplier Device Package: ThinDPAK
Paket: -
Lager13.500
SR806
Taiwan Semiconductor Corporation

DIODE SCHOTTKY 60V 8A DO201AD

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 60 V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 700 mV @ 8 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 500 µA @ 60 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: DO-201AD, Axial
  • Supplier Device Package: DO-201AD
  • Operating Temperature - Junction: -55°C ~ 150°C
Paket: -
Lager37.734
SS14L
Taiwan Semiconductor Corporation

DIODE SCHOTTKY 40V 1A SUB SMA

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 400 µA @ 40 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-219AB
  • Supplier Device Package: Sub SMA
  • Operating Temperature - Junction: -55°C ~ 125°C
Paket: -
Lager88.377
TS4148-RBG
Taiwan Semiconductor Corporation

DIODE GEN PURP 75V 150MA 0805

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 75 V
  • Current - Average Rectified (Io): 150mA
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): 4 ns
  • Current - Reverse Leakage @ Vr: 5 µA @ 75 V
  • Capacitance @ Vr, F: 4pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: 0805 (2012 Metric)
  • Supplier Device Package: 0805
  • Operating Temperature - Junction: -55°C ~ 175°C
Paket: -
Request a Quote
BZT55C27
Taiwan Semiconductor Corporation

QMMELF, 500MW, 5%, SMALL SIGNAL

  • Voltage - Zener (Nom) (Vz): 27 V
  • Tolerance: ±5%
  • Power - Max: 500 mW
  • Impedance (Max) (Zzt): 80 Ohms
  • Current - Reverse Leakage @ Vr: 100 nA @ 20 V
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
  • Operating Temperature: -65°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOD-80 Variant
  • Supplier Device Package: QMMELF
Paket: -
Request a Quote
UGF12JDH
Taiwan Semiconductor Corporation

DIODE GEN PURP 600V 12A ITO220AC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 12A
  • Voltage - Forward (Vf) (Max) @ If: 3.1 V @ 12 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 45 ns
  • Current - Reverse Leakage @ Vr: 500 nA @ 600 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2 Full Pack
  • Supplier Device Package: ITO-220AC
  • Operating Temperature - Junction: -55°C ~ 175°C
Paket: -
Lager3.000
HS1JL
Taiwan Semiconductor Corporation

75NS, 1A, 600V, HIGH EFFICIENT R

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 75 ns
  • Current - Reverse Leakage @ Vr: 5 µA @ 600 V
  • Capacitance @ Vr, F: 15pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SOD-123
  • Supplier Device Package: Sub SMA
  • Operating Temperature - Junction: -55°C ~ 150°C
Paket: -
Lager59.574
SR305H
Taiwan Semiconductor Corporation

DIODE SCHOTTKY 50V 3A DO201AD

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 50 V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 700 mV @ 3 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 500 µA @ 50 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: DO-201AD, Axial
  • Supplier Device Package: DO-201AD
  • Operating Temperature - Junction: -55°C ~ 150°C
Paket: -
Request a Quote
BAT54GW
Taiwan Semiconductor Corporation

0.1A, 30V, SCHOTTKY RECTIFIER

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30 V
  • Current - Average Rectified (Io): 100mA
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): 5 ns
  • Current - Reverse Leakage @ Vr: 2 µA @ 25 V
  • Capacitance @ Vr, F: 10pF @ 1V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SOD-123
  • Supplier Device Package: SOD-123
  • Operating Temperature - Junction: -55°C ~ 125°C
Paket: -
Request a Quote