Page 33 - Taiwan Semiconductor Corporation Produkte

Teilenummer	Hersteller	Beschreibung	Paket	Lager
BZD27C220PHM2G	Taiwan Semiconductor Corporation	DIODE, ZENER, 220V, 1000MW, %, A Voltage - Zener (Nom) (Vz): 220.5V Tolerance: ±5.66% Power - Max: 1W Impedance (Max) (Zzt): 900 Ohms Current - Reverse Leakage @ Vr: 1µA @ 160V Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: Sub SMA	Paket: DO-219AB	Lager6.448
BZD27C9V1P M2G	Taiwan Semiconductor Corporation	DIODE, ZENER, 9.1V, 1000MW, %, S Voltage - Zener (Nom) (Vz): 9.05V Tolerance: ±6.07% Power - Max: 1W Impedance (Max) (Zzt): 4 Ohms Current - Reverse Leakage @ Vr: 10µA @ 5V Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: Sub SMA	Paket: DO-219AB	Lager5.536
BZD27C200PHMHG	Taiwan Semiconductor Corporation	DIODE, ZENER, 200V, 1000MW, %, A Voltage - Zener (Nom) (Vz): 200V Tolerance: ±6% Power - Max: 1W Impedance (Max) (Zzt): 750 Ohms Current - Reverse Leakage @ Vr: 1µA @ 150V Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: Sub SMA	Paket: DO-219AB	Lager3.312
1SMA130Z R3G	Taiwan Semiconductor Corporation	DIODE, ZENER, 130V, 1000MW, %, D Voltage - Zener (Nom) (Vz): 130V Tolerance: ±5% Power - Max: 1.25W Impedance (Max) (Zzt): 700 Ohms Current - Reverse Leakage @ Vr: 1µA @ 98.8V Voltage - Forward (Vf) (Max) @ If: - Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA)	Paket: DO-214AC, SMA	Lager7.136
BZD17C68P RTG	Taiwan Semiconductor Corporation	DIODE, ZENER, 68V, 800MW, %, SUB Voltage - Zener (Nom) (Vz): 68V Tolerance: ±5.88% Power - Max: 800mW Impedance (Max) (Zzt): 80 Ohms Current - Reverse Leakage @ Vr: 1µA @ 51V Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: Sub SMA	Paket: DO-219AB	Lager4.416
BZD17C47P RTG	Taiwan Semiconductor Corporation	DIODE, ZENER, 47V, 800MW, %, SUB Voltage - Zener (Nom) (Vz): 47V Tolerance: ±6.38% Power - Max: 800mW Impedance (Max) (Zzt): 45 Ohms Current - Reverse Leakage @ Vr: 1µA @ 36V Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: Sub SMA	Paket: DO-219AB	Lager3.120
BZD17C27P MHG	Taiwan Semiconductor Corporation	DIODE, ZENER, 27V, 800MW, %, SUB Voltage - Zener (Nom) (Vz): 27V Tolerance: ±7.03% Power - Max: 800mW Impedance (Max) (Zzt): 15 Ohms Current - Reverse Leakage @ Vr: 1µA @ 20V Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: Sub SMA	Paket: DO-219AB	Lager6.784
BZT52C16S RRG	Taiwan Semiconductor Corporation	DIODE, ZENER, 16V, 200MW, 5%, SO Voltage - Zener (Nom) (Vz): 16V Tolerance: ±5% Power - Max: 200mW Impedance (Max) (Zzt): 40 Ohms Current - Reverse Leakage @ Vr: 45nA @ 11.2V Voltage - Forward (Vf) (Max) @ If: 1V @ 10mA Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-90, SOD-323F Supplier Device Package: SOD-323F	Paket: SC-90, SOD-323F	Lager2.688
MTZJ24SC R0G	Taiwan Semiconductor Corporation	DIODE, ZENER, 23.72V, 500MW, %, Voltage - Zener (Nom) (Vz): 23.72V Tolerance: ±2% Power - Max: 500mW Impedance (Max) (Zzt): 35 Ohms Current - Reverse Leakage @ Vr: 200nA @ 19V Voltage - Forward (Vf) (Max) @ If: - Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: DO-204AG, DO-34, Axial Supplier Device Package: DO-34	Paket: DO-204AG, DO-34, Axial	Lager3.440
DBLS208G RDG	Taiwan Semiconductor Corporation	BRIDGE RECTIFIER, STANDARD, 2A, Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 1200V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 2A Current - Reverse Leakage @ Vr: 2µA @ 1200V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 4-SMD, Gull Wing Supplier Device Package: DBLS	Paket: 4-SMD, Gull Wing	Lager2.608
ES15GLWH	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 1.5A SOD123W Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400 V Current - Average Rectified (Io): 1.5A Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Current - Reverse Leakage @ Vr: 1 µA @ 400 V Capacitance @ Vr, F: 21pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123W Supplier Device Package: SOD-123W Operating Temperature - Junction: -55°C ~ 150°C	Paket: -	Lager59.940
BZT52C8V2-G	Taiwan Semiconductor Corporation	SOD-123, 350MW, 5%, SMALL SIGNAL Voltage - Zener (Nom) (Vz): 8.2 V Tolerance: ±5% Power - Max: 350 mW Impedance (Max) (Zzt): 15 Ohms Current - Reverse Leakage @ Vr: 700 nA @ 5 V Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOD-123 Supplier Device Package: SOD-123	Paket: -	Request a Quote
BZT52B5V1-G	Taiwan Semiconductor Corporation	SOD-123, 410MW, 2%, SMALL SIGNAL Voltage - Zener (Nom) (Vz): 5.1 V Tolerance: ±2% Power - Max: 410 mW Impedance (Max) (Zzt): 60 Ohms Current - Reverse Leakage @ Vr: 2 µA @ 2 V Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOD-123 Supplier Device Package: SOD-123	Paket: -	Request a Quote
RMB4S	Taiwan Semiconductor Corporation	BRIDGE RECT 1P 400V 500MA MBS Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 400 V Current - Average Rectified (Io): 500 mA Voltage - Forward (Vf) (Max) @ If: 1 V @ 400 mA Current - Reverse Leakage @ Vr: 5 µA @ 400 V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 4-BESOP (0.173", 4.40mm Width) Supplier Device Package: MBS	Paket: -	Lager9.000
PU2BLS	Taiwan Semiconductor Corporation	25NS, 2A, 200V, ULTRA FAST RECOV Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 930 mV @ 2 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Current - Reverse Leakage @ Vr: 2 µA @ 100 V Capacitance @ Vr, F: 31pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123H Supplier Device Package: SOD-123HE Operating Temperature - Junction: -55°C ~ 175°C	Paket: -	Lager60.000
SS13MH	Taiwan Semiconductor Corporation	1A, 30V, SCHOTTKY RECTIFIER Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 50 µA @ 30 V Capacitance @ Vr, F: 50pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: 2-SMD, Flat Lead Supplier Device Package: Micro SMA Operating Temperature - Junction: -55°C ~ 150°C	Paket: -	Request a Quote
TSM085NB03DCR-RLG	Taiwan Semiconductor Corporation	MOSFET 2N-CH 30V 12A/51A 8PDFNU FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 51A (Tc) Rds On (Max) @ Id, Vgs: 8.5mOhm @ 12A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1091pF @ 15V Power - Max: 2W (Ta), 40W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: 8-PDFNU (5x6)	Paket: -	Lager15.000
BZD27C13P	Taiwan Semiconductor Corporation	SUB SMA, 1000MW, 6%, ZENER DIODE Voltage - Zener (Nom) (Vz): 13.25 V Tolerance: ±6.42% Power - Max: 1 W Impedance (Max) (Zzt): 10 Ohms Current - Reverse Leakage @ Vr: 2 µA @ 10 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: SOD-123 Supplier Device Package: Sub SMA	Paket: -	Request a Quote
TQL821CSV33-RLG	Taiwan Semiconductor Corporation	200MA, LOW-IQ 30A LOW-DROPOUT LI Output Configuration: Positive Output Type: Fixed Number of Regulators: 1 Voltage - Input (Max): 50V Voltage - Output (Min/Fixed): 3.3V Voltage - Output (Max): - Voltage Dropout (Max): 0.34V @ 200mA Current - Output: 200mA Current - Quiescent (Iq): 77 µA Current - Supply (Max): - PSRR: 59dB (100Hz) Control Features: Enable Protection Features: Over Temperature Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad Supplier Device Package: 8-SOP-EP	Paket: -	Lager14.850
TUAU4DH	Taiwan Semiconductor Corporation	50NS, 4A, 200V, HIGH EFFICIENT R Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 4A Voltage - Forward (Vf) (Max) @ If: 900 mV @ 4 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Current - Reverse Leakage @ Vr: 5 µA @ 200 V Capacitance @ Vr, F: 62pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Supplier Device Package: SMPC4.6U Operating Temperature - Junction: -55°C ~ 175°C	Paket: -	Lager18.000
SK82C-V6G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 20V 8A DO214AB Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 20 V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: - Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500 µA @ 20 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -55°C ~ 125°C	Paket: -	Request a Quote
SS39H	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 90V 3A DO214AB Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 90 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 850 mV @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100 µA @ 90 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -55°C ~ 150°C	Paket: -	Request a Quote
BZT52C47-G-RHG	Taiwan Semiconductor Corporation	SOD-123, 350MW, 5%, SMALL SIGNAL Voltage - Zener (Nom) (Vz): 47 V Tolerance: ±5% Power - Max: 500 mW Impedance (Max) (Zzt): 170 Ohms Current - Reverse Leakage @ Vr: 45 nA @ 33 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOD-123F Supplier Device Package: SOD-123F	Paket: -	Lager9.000
BZT55C20	Taiwan Semiconductor Corporation	QMMELF, 500MW, 5%, SMALL SIGNAL Voltage - Zener (Nom) (Vz): 20 V Tolerance: ±5% Power - Max: 500 mW Impedance (Max) (Zzt): 55 Ohms Current - Reverse Leakage @ Vr: 100 nA @ 15 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA Operating Temperature: -65°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: SOD-80 Variant Supplier Device Package: QMMELF	Paket: -	Request a Quote
M3Z24VC-RRG	Taiwan Semiconductor Corporation	SOD-323F, 200MW, 5%, ZENER DIODE Voltage - Zener (Nom) (Vz): 24 V Tolerance: ±5% Power - Max: 200 mW Impedance (Max) (Zzt): 70 Ohms Current - Reverse Leakage @ Vr: 100 nA @ 19 V Voltage - Forward (Vf) (Max) @ If: - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-90, SOD-323F Supplier Device Package: SOD-323F	Paket: -	Lager9.000
TS25P05GH	Taiwan Semiconductor Corporation	BRIDGE RECT 1P 600V 25A TS-6P Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 600 V Current - Average Rectified (Io): 25 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 25 A Current - Reverse Leakage @ Vr: 10 µA @ 600 V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-SIP, TS-6P Supplier Device Package: TS-6P	Paket: -	Lager3.600
HS3JB	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 3A DO214AA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75 ns Current - Reverse Leakage @ Vr: 10 µA @ 600 V Capacitance @ Vr, F: 50pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 150°C	Paket: -	Lager14.850
TSM500P02CX	Taiwan Semiconductor Corporation	-20V, -4.7A, SINGLE P-CHANNEL PO FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20 V Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 0.8V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 9.6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 850 pF @ 10 V Vgs (Max): ±10V FET Feature: - Power Dissipation (Max): 1.56W (Tc) Rds On (Max) @ Id, Vgs: 50mOhm @ 3A, 4.5V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23 Package / Case: TO-236-3, SC-59, SOT-23-3	Paket: -	Request a Quote