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GeneSiC Semiconductor Produkte - Transistoren - FETs, MOSFET - Einzeln

Aufzeichnungen 69
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Paket
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Anzahl
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
FET Feature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
G3R75MT12J
GeneSiC Semiconductor

SIC MOSFET N-CH 42A TO263-7

  • FET Type: N-Channel
  • Technology: SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss): 1200 V
  • Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 15V
  • Vgs(th) (Max) @ Id: 2.69V @ 7.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 15 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1560 pF @ 800 V
  • Vgs (Max): ±15V
  • FET Feature: -
  • Power Dissipation (Max): 224W (Tc)
  • Rds On (Max) @ Id, Vgs: 90mOhm @ 20A, 15V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-263-7
  • Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Paket: -
Lager12
SiCFET (Silicon Carbide)
1200 V
42A (Tc)
15V
2.69V @ 7.5mA
54 nC @ 15 V
1560 pF @ 800 V
±15V
-
224W (Tc)
90mOhm @ 20A, 15V
-55°C ~ 175°C (TJ)
Surface Mount
TO-263-7
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
G3R75MT12K
GeneSiC Semiconductor

SIC MOSFET N-CH 41A TO247-4

  • FET Type: N-Channel
  • Technology: SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss): 1200 V
  • Current - Continuous Drain (Id) @ 25°C: 41A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 15V
  • Vgs(th) (Max) @ Id: 2.69V @ 7.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 15 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1560 pF @ 800 V
  • Vgs (Max): +22V, -10V
  • FET Feature: -
  • Power Dissipation (Max): 207W (Tc)
  • Rds On (Max) @ Id, Vgs: 90mOhm @ 20A, 15V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247-4
  • Package / Case: TO-247-4
Paket: -
Lager2.592
SiCFET (Silicon Carbide)
1200 V
41A (Tc)
15V
2.69V @ 7.5mA
54 nC @ 15 V
1560 pF @ 800 V
+22V, -10V
-
207W (Tc)
90mOhm @ 20A, 15V
-55°C ~ 175°C (TJ)
Through Hole
TO-247-4
TO-247-4
G3R75MT12D
GeneSiC Semiconductor

SIC MOSFET N-CH 41A TO247-3

  • FET Type: N-Channel
  • Technology: SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss): 1200 V
  • Current - Continuous Drain (Id) @ 25°C: 41A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 15V
  • Vgs(th) (Max) @ Id: 2.69V @ 7.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 15 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1560 pF @ 800 V
  • Vgs (Max): +22V, -10V
  • FET Feature: -
  • Power Dissipation (Max): 207W (Tc)
  • Rds On (Max) @ Id, Vgs: 90mOhm @ 20A, 15V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247-3
  • Package / Case: TO-247-3
Paket: -
Lager7.947
SiCFET (Silicon Carbide)
1200 V
41A (Tc)
15V
2.69V @ 7.5mA
54 nC @ 15 V
1560 pF @ 800 V
+22V, -10V
-
207W (Tc)
90mOhm @ 20A, 15V
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247-3
G2R1000MT17J-TR
GeneSiC Semiconductor

1700V 1000M TO-263-7 G2R SIC MOS

  • FET Type: N-Channel
  • Technology: SiC (Silicon Carbide Junction Transistor)
  • Drain to Source Voltage (Vdss): 1700 V
  • Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 20V
  • Vgs(th) (Max) @ Id: 4V @ 2mA
  • Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 20 V
  • Input Capacitance (Ciss) (Max) @ Vds: 139 pF @ 1000 V
  • Vgs (Max): +20V, -5V
  • FET Feature: -
  • Power Dissipation (Max): 44W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2A, 20V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-263-7
  • Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Paket: -
Lager2.370
SiC (Silicon Carbide Junction Transistor)
1700 V
5A (Tc)
20V
4V @ 2mA
11 nC @ 20 V
139 pF @ 1000 V
+20V, -5V
-
44W (Tc)
1.2Ohm @ 2A, 20V
-55°C ~ 175°C (TJ)
Surface Mount
TO-263-7
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
G3R350MT12J
GeneSiC Semiconductor

SIC MOSFET N-CH 11A TO263-7

  • FET Type: N-Channel
  • Technology: SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss): 1200 V
  • Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 15V
  • Vgs(th) (Max) @ Id: 2.69V @ 2mA
  • Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 15 V
  • Input Capacitance (Ciss) (Max) @ Vds: 334 pF @ 800 V
  • Vgs (Max): ±15V
  • FET Feature: -
  • Power Dissipation (Max): 75W (Tc)
  • Rds On (Max) @ Id, Vgs: 420mOhm @ 4A, 15V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-263-7
  • Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Paket: -
Lager11.241
SiCFET (Silicon Carbide)
1200 V
11A (Tc)
15V
2.69V @ 2mA
12 nC @ 15 V
334 pF @ 800 V
±15V
-
75W (Tc)
420mOhm @ 4A, 15V
-55°C ~ 175°C (TJ)
Surface Mount
TO-263-7
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
G3R350MT12D
GeneSiC Semiconductor

SIC MOSFET N-CH 11A TO247-3

  • FET Type: N-Channel
  • Technology: SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss): 1200 V
  • Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 15V
  • Vgs(th) (Max) @ Id: 2.69V @ 2mA
  • Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 15 V
  • Input Capacitance (Ciss) (Max) @ Vds: 334 pF @ 800 V
  • Vgs (Max): ±15V
  • FET Feature: -
  • Power Dissipation (Max): 74W (Tc)
  • Rds On (Max) @ Id, Vgs: 420mOhm @ 4A, 15V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247-3
  • Package / Case: TO-247-3
Paket: -
Lager16.794
SiCFET (Silicon Carbide)
1200 V
11A (Tc)
15V
2.69V @ 2mA
12 nC @ 15 V
334 pF @ 800 V
±15V
-
74W (Tc)
420mOhm @ 4A, 15V
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247-3
G3R450MT17D
GeneSiC Semiconductor

SIC MOSFET N-CH 9A TO247-3

  • FET Type: N-Channel
  • Technology: SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss): 1700 V
  • Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 15V
  • Vgs(th) (Max) @ Id: 2.7V @ 2mA
  • Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 15 V
  • Input Capacitance (Ciss) (Max) @ Vds: 454 pF @ 1000 V
  • Vgs (Max): ±15V
  • FET Feature: -
  • Power Dissipation (Max): 88W (Tc)
  • Rds On (Max) @ Id, Vgs: 585mOhm @ 4A, 15V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247-3
  • Package / Case: TO-247-3
Paket: -
Lager4.722
SiCFET (Silicon Carbide)
1700 V
9A (Tc)
15V
2.7V @ 2mA
18 nC @ 15 V
454 pF @ 1000 V
±15V
-
88W (Tc)
585mOhm @ 4A, 15V
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247-3
G3R450MT17J
GeneSiC Semiconductor

SIC MOSFET N-CH 9A TO263-7

  • FET Type: N-Channel
  • Technology: SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss): 1700 V
  • Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 15V
  • Vgs(th) (Max) @ Id: 2.7V @ 2mA
  • Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 15 V
  • Input Capacitance (Ciss) (Max) @ Vds: 454 pF @ 1000 V
  • Vgs (Max): ±15V
  • FET Feature: -
  • Power Dissipation (Max): 91W (Tc)
  • Rds On (Max) @ Id, Vgs: 585mOhm @ 4A, 15V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-263-7
  • Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Paket: -
Lager19.407
SiCFET (Silicon Carbide)
1700 V
9A (Tc)
15V
2.7V @ 2mA
18 nC @ 15 V
454 pF @ 1000 V
±15V
-
91W (Tc)
585mOhm @ 4A, 15V
-55°C ~ 175°C (TJ)
Surface Mount
TO-263-7
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
G3R450MT17J-TR
GeneSiC Semiconductor

1700V 450M TO-263-7 G3R SIC MOSF

  • FET Type: N-Channel
  • Technology: SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss): 1700 V
  • Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 15V
  • Vgs(th) (Max) @ Id: 2.7V @ 2mA
  • Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 15 V
  • Input Capacitance (Ciss) (Max) @ Vds: 454 pF @ 1000 V
  • Vgs (Max): +15V, -5V
  • FET Feature: -
  • Power Dissipation (Max): 71W (Tc)
  • Rds On (Max) @ Id, Vgs: 585mOhm @ 4A, 15V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-263-7
  • Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Paket: -
Lager1.530
SiCFET (Silicon Carbide)
1700 V
8A (Tc)
15V
2.7V @ 2mA
18 nC @ 15 V
454 pF @ 1000 V
+15V, -5V
-
71W (Tc)
585mOhm @ 4A, 15V
-55°C ~ 175°C (TJ)
Surface Mount
TO-263-7
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
G2R120MT33J
GeneSiC Semiconductor

SIC MOSFET N-CH TO263-7

  • FET Type: N-Channel
  • Technology: SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss): 3300 V
  • Current - Continuous Drain (Id) @ 25°C: 35A
  • Drive Voltage (Max Rds On, Min Rds On): 20V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 20 V
  • Input Capacitance (Ciss) (Max) @ Vds: 3706 pF @ 1000 V
  • Vgs (Max): +25V, -10V
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 156mOhm @ 20A, 20V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-263-7
  • Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Paket: -
Lager1.929
SiCFET (Silicon Carbide)
3300 V
35A
20V
-
145 nC @ 20 V
3706 pF @ 1000 V
+25V, -10V
-
-
156mOhm @ 20A, 20V
-55°C ~ 175°C (TJ)
Surface Mount
TO-263-7
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
G3R40MT12D
GeneSiC Semiconductor

SIC MOSFET N-CH 71A TO247-3

  • FET Type: N-Channel
  • Technology: SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss): 1200 V
  • Current - Continuous Drain (Id) @ 25°C: 71A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 15V
  • Vgs(th) (Max) @ Id: 2.69V @ 10mA
  • Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 15 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2929 pF @ 800 V
  • Vgs (Max): ±15V
  • FET Feature: -
  • Power Dissipation (Max): 333W (Tc)
  • Rds On (Max) @ Id, Vgs: 48mOhm @ 35A, 15V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247-3
  • Package / Case: TO-247-3
Paket: -
Lager3.108
SiCFET (Silicon Carbide)
1200 V
71A (Tc)
15V
2.69V @ 10mA
106 nC @ 15 V
2929 pF @ 800 V
±15V
-
333W (Tc)
48mOhm @ 35A, 15V
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247-3
G3R40MT12K
GeneSiC Semiconductor

SIC MOSFET N-CH 71A TO247-4

  • FET Type: N-Channel
  • Technology: SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss): 1200 V
  • Current - Continuous Drain (Id) @ 25°C: 71A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 15V
  • Vgs(th) (Max) @ Id: 2.69V @ 10mA
  • Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 15 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2929 pF @ 800 V
  • Vgs (Max): ±15V
  • FET Feature: -
  • Power Dissipation (Max): 333W (Tc)
  • Rds On (Max) @ Id, Vgs: 48mOhm @ 35A, 15V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247-4
  • Package / Case: TO-247-4
Paket: -
Lager2.850
SiCFET (Silicon Carbide)
1200 V
71A (Tc)
15V
2.69V @ 10mA
106 nC @ 15 V
2929 pF @ 800 V
±15V
-
333W (Tc)
48mOhm @ 35A, 15V
-55°C ~ 175°C (TJ)
Through Hole
TO-247-4
TO-247-4
G3R40MT12J
GeneSiC Semiconductor

SIC MOSFET N-CH 75A TO263-7

  • FET Type: N-Channel
  • Technology: SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss): 1200 V
  • Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 15V
  • Vgs(th) (Max) @ Id: 2.7V @ 18mA (Typ)
  • Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 15 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2929 pF @ 800 V
  • Vgs (Max): ±15V
  • FET Feature: -
  • Power Dissipation (Max): 374W (Tc)
  • Rds On (Max) @ Id, Vgs: 48mOhm @ 35A, 15V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-263-7
  • Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Paket: -
Lager4.401
SiCFET (Silicon Carbide)
1200 V
75A (Tc)
15V
2.7V @ 18mA (Typ)
106 nC @ 15 V
2929 pF @ 800 V
±15V
-
374W (Tc)
48mOhm @ 35A, 15V
-55°C ~ 175°C (TJ)
Surface Mount
TO-263-7
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
G3R160MT12D
GeneSiC Semiconductor

SIC MOSFET N-CH 22A TO247-3

  • FET Type: N-Channel
  • Technology: SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss): 1200 V
  • Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 15V
  • Vgs(th) (Max) @ Id: 2.69V @ 5mA
  • Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 15 V
  • Input Capacitance (Ciss) (Max) @ Vds: 730 pF @ 800 V
  • Vgs (Max): ±15V
  • FET Feature: -
  • Power Dissipation (Max): 123W (Tc)
  • Rds On (Max) @ Id, Vgs: 192mOhm @ 10A, 15V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247-3
  • Package / Case: TO-247-3
Paket: -
Lager7.542
SiCFET (Silicon Carbide)
1200 V
22A (Tc)
15V
2.69V @ 5mA
28 nC @ 15 V
730 pF @ 800 V
±15V
-
123W (Tc)
192mOhm @ 10A, 15V
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247-3
G3R160MT12J
GeneSiC Semiconductor

SIC MOSFET N-CH 19A TO263-7

  • FET Type: N-Channel
  • Technology: SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss): 1200 V
  • Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 15V
  • Vgs(th) (Max) @ Id: 2.7V @ 5mA (Typ)
  • Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 15 V
  • Input Capacitance (Ciss) (Max) @ Vds: 724 pF @ 800 V
  • Vgs (Max): +20V, -10V
  • FET Feature: -
  • Power Dissipation (Max): 128W (Tc)
  • Rds On (Max) @ Id, Vgs: 208mOhm @ 10A, 15V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-263-7
  • Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Paket: -
Lager3.180
SiCFET (Silicon Carbide)
1200 V
19A (Tc)
15V
2.7V @ 5mA (Typ)
23 nC @ 15 V
724 pF @ 800 V
+20V, -10V
-
128W (Tc)
208mOhm @ 10A, 15V
-55°C ~ 175°C (TJ)
Surface Mount
TO-263-7
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
G3R160MT17D
GeneSiC Semiconductor

SIC MOSFET N-CH 21A TO247-3

  • FET Type: N-Channel
  • Technology: SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss): 1700 V
  • Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 15V
  • Vgs(th) (Max) @ Id: 2.7V @ 5mA
  • Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 15 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1272 pF @ 1000 V
  • Vgs (Max): ±15V
  • FET Feature: -
  • Power Dissipation (Max): 175W (Tc)
  • Rds On (Max) @ Id, Vgs: 208mOhm @ 12A, 15V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247-3
  • Package / Case: TO-247-3
Paket: -
Lager2.616
SiCFET (Silicon Carbide)
1700 V
21A (Tc)
15V
2.7V @ 5mA
51 nC @ 15 V
1272 pF @ 1000 V
±15V
-
175W (Tc)
208mOhm @ 12A, 15V
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247-3
G3R160MT17J
GeneSiC Semiconductor

SIC MOSFET N-CH 18A TO263-7

  • FET Type: N-Channel
  • Technology: SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss): 1700 V
  • Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 15V
  • Vgs(th) (Max) @ Id: 2.7V @ 5mA
  • Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 15 V
  • Input Capacitance (Ciss) (Max) @ Vds: 854 pF @ 1000 V
  • Vgs (Max): ±15V
  • FET Feature: -
  • Power Dissipation (Max): 187W (Tc)
  • Rds On (Max) @ Id, Vgs: 208mOhm @ 12A, 15V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-263-7
  • Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Paket: -
Request a Quote
SiCFET (Silicon Carbide)
1700 V
18A (Tc)
15V
2.7V @ 5mA
29 nC @ 15 V
854 pF @ 1000 V
±15V
-
187W (Tc)
208mOhm @ 12A, 15V
-55°C ~ 175°C (TJ)
Surface Mount
TO-263-7
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
G2R120MT33J-TR
GeneSiC Semiconductor

3300V 120M TO-263-7 G2R SIC MOSF

  • FET Type: N-Channel
  • Technology: SiC (Silicon Carbide Junction Transistor)
  • Drain to Source Voltage (Vdss): 3300 V
  • Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 20V
  • Vgs(th) (Max) @ Id: 3.5V @ 4mA
  • Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 20 V
  • Input Capacitance (Ciss) (Max) @ Vds: 3009 pF @ 1000 V
  • Vgs (Max): +20V, -5V
  • FET Feature: -
  • Power Dissipation (Max): 366W (Tc)
  • Rds On (Max) @ Id, Vgs: 156mOhm @ 15A, 20V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-263-7
  • Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Paket: -
Request a Quote
SiC (Silicon Carbide Junction Transistor)
3300 V
33A (Tc)
20V
3.5V @ 4mA
130 nC @ 20 V
3009 pF @ 1000 V
+20V, -5V
-
366W (Tc)
156mOhm @ 15A, 20V
-55°C ~ 175°C (TJ)
Surface Mount
TO-263-7
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
G2R50MT33K
GeneSiC Semiconductor

3300V 50M TO-247-4 SIC MOSFET

  • FET Type: N-Channel
  • Technology: SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss): 3300 V
  • Current - Continuous Drain (Id) @ 25°C: 63A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 20V
  • Vgs(th) (Max) @ Id: 3.5V @ 10mA (Typ)
  • Gate Charge (Qg) (Max) @ Vgs: 340 nC @ 20 V
  • Input Capacitance (Ciss) (Max) @ Vds: 7301 pF @ 1000 V
  • Vgs (Max): +25V, -10V
  • FET Feature: -
  • Power Dissipation (Max): 536W (Tc)
  • Rds On (Max) @ Id, Vgs: 50mOhm @ 40A, 20V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247-4
  • Package / Case: TO-247-4
Paket: -
Request a Quote
SiCFET (Silicon Carbide)
3300 V
63A (Tc)
20V
3.5V @ 10mA (Typ)
340 nC @ 20 V
7301 pF @ 1000 V
+25V, -10V
-
536W (Tc)
50mOhm @ 40A, 20V
-55°C ~ 175°C (TJ)
Through Hole
TO-247-4
TO-247-4
G3R75MT12J-TR
GeneSiC Semiconductor

1200V 75M TO-263-7 G3R SIC MOSFE

  • FET Type: N-Channel
  • Technology: SiC (Silicon Carbide Junction Transistor)
  • Drain to Source Voltage (Vdss): 1200 V
  • Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
  • Vgs(th) (Max) @ Id: 2.7V @ 10mA
  • Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 15 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1545 pF @ 800 V
  • Vgs (Max): +22V, -10V
  • FET Feature: -
  • Power Dissipation (Max): 196W (Tc)
  • Rds On (Max) @ Id, Vgs: 85mOhm @ 20A, 18V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-263-7
  • Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Paket: -
Lager17.904
SiC (Silicon Carbide Junction Transistor)
1200 V
38A (Tc)
15V, 18V
2.7V @ 10mA
47 nC @ 15 V
1545 pF @ 800 V
+22V, -10V
-
196W (Tc)
85mOhm @ 20A, 18V
-55°C ~ 175°C (TJ)
Surface Mount
TO-263-7
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
G3R30MT12J-TR
GeneSiC Semiconductor

1200V 30M TO-263-7 G3R SIC MOSFE

  • FET Type: N-Channel
  • Technology: SiC (Silicon Carbide Junction Transistor)
  • Drain to Source Voltage (Vdss): 1200 V
  • Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
  • Vgs(th) (Max) @ Id: 2.7V @ 24mA
  • Gate Charge (Qg) (Max) @ Vgs: 118 nC @ 15 V
  • Input Capacitance (Ciss) (Max) @ Vds: 3863 pF @ 800 V
  • Vgs (Max): +22V, -10V
  • FET Feature: -
  • Power Dissipation (Max): 408W (Tc)
  • Rds On (Max) @ Id, Vgs: 34mOhm @ 45A, 18V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-263-7
  • Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Paket: -
Lager4.659
SiC (Silicon Carbide Junction Transistor)
1200 V
85A (Tc)
15V, 18V
2.7V @ 24mA
118 nC @ 15 V
3863 pF @ 800 V
+22V, -10V
-
408W (Tc)
34mOhm @ 45A, 18V
-55°C ~ 175°C (TJ)
Surface Mount
TO-263-7
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
G3R45MT17D
GeneSiC Semiconductor

SIC MOSFET N-CH 61A TO247-3

  • FET Type: N-Channel
  • Technology: SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss): 1700 V
  • Current - Continuous Drain (Id) @ 25°C: 61A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 15V
  • Vgs(th) (Max) @ Id: 2.7V @ 8mA
  • Gate Charge (Qg) (Max) @ Vgs: 182 nC @ 15 V
  • Input Capacitance (Ciss) (Max) @ Vds: 4523 pF @ 1000 V
  • Vgs (Max): ±15V
  • FET Feature: -
  • Power Dissipation (Max): 438W (Tc)
  • Rds On (Max) @ Id, Vgs: 58mOhm @ 40A, 15V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247-3
  • Package / Case: TO-247-3
Paket: -
Lager3.045
SiCFET (Silicon Carbide)
1700 V
61A (Tc)
15V
2.7V @ 8mA
182 nC @ 15 V
4523 pF @ 1000 V
±15V
-
438W (Tc)
58mOhm @ 40A, 15V
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247-3
G3R45MT17K
GeneSiC Semiconductor

SIC MOSFET N-CH 61A TO247-4

  • FET Type: N-Channel
  • Technology: SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss): 1700 V
  • Current - Continuous Drain (Id) @ 25°C: 61A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 15V
  • Vgs(th) (Max) @ Id: 2.7V @ 8mA
  • Gate Charge (Qg) (Max) @ Vgs: 182 nC @ 15 V
  • Input Capacitance (Ciss) (Max) @ Vds: 4523 pF @ 1000 V
  • Vgs (Max): ±15V
  • FET Feature: -
  • Power Dissipation (Max): 438W (Tc)
  • Rds On (Max) @ Id, Vgs: 58mOhm @ 40A, 15V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247-4
  • Package / Case: TO-247-4
Paket: -
Lager2.130
SiCFET (Silicon Carbide)
1700 V
61A (Tc)
15V
2.7V @ 8mA
182 nC @ 15 V
4523 pF @ 1000 V
±15V
-
438W (Tc)
58mOhm @ 40A, 15V
-55°C ~ 175°C (TJ)
Through Hole
TO-247-4
TO-247-4
G3R60MT07K
GeneSiC Semiconductor

750V 60M TO-247-4 G3R SIC MOSFET

  • FET Type: -
  • Technology: SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss): 750 V
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): +20V, -10V
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247-4
  • Package / Case: TO-247-4
Paket: -
Lager5.775
SiCFET (Silicon Carbide)
750 V
-
-
-
-
-
+20V, -10V
-
-
-
-
Through Hole
TO-247-4
TO-247-4
G3R60MT07J
GeneSiC Semiconductor

750V 60M TO-263-7 G3R SIC MOSFET

  • FET Type: -
  • Technology: SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss): 750 V
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): +20V, -10V
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-263-7
  • Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Paket: -
Lager3.918
SiCFET (Silicon Carbide)
750 V
-
-
-
-
-
+20V, -10V
-
-
-
-
Surface Mount
TO-263-7
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
G3R60MT07D
GeneSiC Semiconductor

750V 60M TO-247-3 G3R SIC MOSFET

  • FET Type: -
  • Technology: SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss): 750 V
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): +20V, -10V
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247-3
  • Package / Case: TO-247-3
Paket: -
Lager8.604
SiCFET (Silicon Carbide)
750 V
-
-
-
-
-
+20V, -10V
-
-
-
-
Through Hole
TO-247-3
TO-247-3
G2R1000MT33J-TR
GeneSiC Semiconductor

3300V 1000M TO-263-7 G2R SIC MOS

  • FET Type: N-Channel
  • Technology: SiC (Silicon Carbide Junction Transistor)
  • Drain to Source Voltage (Vdss): 3300 V
  • Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 20V
  • Vgs(th) (Max) @ Id: 3.5V @ 2mA
  • Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 20 V
  • Input Capacitance (Ciss) (Max) @ Vds: 238 pF @ 1000 V
  • Vgs (Max): +20V, -5V
  • FET Feature: -
  • Power Dissipation (Max): 74W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2A, 20V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-263-7
  • Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Paket: -
Lager2.325
SiC (Silicon Carbide Junction Transistor)
3300 V
5A (Tc)
20V
3.5V @ 2mA
21 nC @ 20 V
238 pF @ 1000 V
+20V, -5V
-
74W (Tc)
1.2Ohm @ 2A, 20V
-55°C ~ 175°C (TJ)
Surface Mount
TO-263-7
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
G2R1000MT17J
GeneSiC Semiconductor

SIC MOSFET N-CH 3A TO263-7

  • FET Type: N-Channel
  • Technology: SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss): 1700 V
  • Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 20V
  • Vgs(th) (Max) @ Id: 4V @ 2mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 139 pF @ 1000 V
  • Vgs (Max): +20V, -10V
  • FET Feature: -
  • Power Dissipation (Max): 54W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2A, 20V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-263-7
  • Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Paket: -
Lager39.993
SiCFET (Silicon Carbide)
1700 V
3A (Tc)
20V
4V @ 2mA
-
139 pF @ 1000 V
+20V, -10V
-
54W (Tc)
1.2Ohm @ 2A, 20V
-55°C ~ 175°C (TJ)
Surface Mount
TO-263-7
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
G2R1000MT17D
GeneSiC Semiconductor

SIC MOSFET N-CH 4A TO247-3

  • FET Type: N-Channel
  • Technology: SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss): 1700 V
  • Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 20V
  • Vgs(th) (Max) @ Id: 5.5V @ 500µA
  • Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 20 V
  • Input Capacitance (Ciss) (Max) @ Vds: 111 pF @ 1000 V
  • Vgs (Max): +25V, -10V
  • FET Feature: -
  • Power Dissipation (Max): 44W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2A, 20V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247-3
  • Package / Case: TO-247-3
Paket: -
Lager12.009
SiCFET (Silicon Carbide)
1700 V
5A (Tc)
20V
5.5V @ 500µA
11 nC @ 20 V
111 pF @ 1000 V
+25V, -10V
-
44W (Tc)
1.2Ohm @ 2A, 20V
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247-3
G2R1000MT33J
GeneSiC Semiconductor

SIC MOSFET N-CH 4A TO263-7

  • FET Type: N-Channel
  • Technology: SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss): 3300 V
  • Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 20V
  • Vgs(th) (Max) @ Id: 3.5V @ 2mA
  • Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 20 V
  • Input Capacitance (Ciss) (Max) @ Vds: 238 pF @ 1000 V
  • Vgs (Max): +20V, -5V
  • FET Feature: -
  • Power Dissipation (Max): 74W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2A, 20V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-263-7
  • Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Paket: -
Lager11.016
SiCFET (Silicon Carbide)
3300 V
4A (Tc)
20V
3.5V @ 2mA
21 nC @ 20 V
238 pF @ 1000 V
+20V, -5V
-
74W (Tc)
1.2Ohm @ 2A, 20V
-55°C ~ 175°C (TJ)
Surface Mount
TO-263-7
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA