|
|
Toshiba Semiconductor and Storage |
MOSFET N-CH
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: Through Hole
- Supplier Device Package: TO-92MOD
- Package / Case: TO-226-3, TO-92-3 Long Body
|
Paket: TO-226-3, TO-92-3 Long Body |
Lager6.048 |
|
|
|
Toshiba Semiconductor and Storage |
MOSFET N-CH 900V 1A DP
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 900V
- Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 40W (Tc)
- Rds On (Max) @ Id, Vgs: 9 Ohm @ 500mA, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DP
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
|
Paket: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Lager72.000 |
|
|
|
Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 27A SOP-8 ADV
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 27A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.3V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1395pF @ 10V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.6W (Ta), 45W (Tc)
- Rds On (Max) @ Id, Vgs: 9 mOhm @ 14A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SOP Advance (5x5)
- Package / Case: 8-PowerVDFN
|
Paket: 8-PowerVDFN |
Lager4.224 |
|
|
|
Toshiba Semiconductor and Storage |
MOSFET N-CH 650V 6.8A TO-220SIS
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650V
- Current - Continuous Drain (Id) @ 25°C: 6.8A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 490pF @ 300V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 30W (Tc)
- Rds On (Max) @ Id, Vgs: 780 mOhm @ 3.4A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220SIS
- Package / Case: TO-220-3 Full Pack, Isolated Tab
|
Paket: TO-220-3 Full Pack, Isolated Tab |
Lager8.076 |
|
|
|
Toshiba Semiconductor and Storage |
MOSFET N CH 80V 60A SOP ADV
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 80V
- Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 59nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 5300pF @ 40V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.6W (Ta), 78W (Tc)
- Rds On (Max) @ Id, Vgs: 4 mOhm @ 30A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SOP Advance (5x5)
- Package / Case: 8-PowerVDFN
|
Paket: 8-PowerVDFN |
Lager6.048 |
|
|
|
Toshiba Semiconductor and Storage |
MOSFET N-CH 150V 9A 8TSON
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 150V
- Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 200µA
- Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 75V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 700mW (Ta), 39W (Tc)
- Rds On (Max) @ Id, Vgs: 59 mOhm @ 4.5A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-TSON Advance (3.3x3.3)
- Package / Case: 8-PowerVDFN
|
Paket: 8-PowerVDFN |
Lager3.760 |
|
|
|
Toshiba Semiconductor and Storage |
MOSFET N CH 60V 32A 8-SOP ADV
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 32A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 6.5V, 10V
- Vgs(th) (Max) @ Id: 4V @ 500µA
- Gate Charge (Qg) (Max) @ Vgs: 49nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 3965pF @ 30V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.6W (Ta), 63W (Tc)
- Rds On (Max) @ Id, Vgs: 4.6 mOhm @ 16A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SOP Advance (5x5)
- Package / Case: 8-PowerVDFN
|
Paket: 8-PowerVDFN |
Lager46.470 |
|
|
|
Toshiba Semiconductor and Storage |
TRANS PREBIAS PNP 0.05W CST3
- Transistor Type: PNP - Pre-Biased
- Current - Collector (Ic) (Max): 50mA
- Voltage - Collector Emitter Breakdown (Max): 20V
- Resistor - Base (R1) (Ohms): 47k
- Resistor - Emitter Base (R2) (Ohms): 47k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: -
- Power - Max: 50mW
- Mounting Type: Surface Mount
- Package / Case: SC-101, SOT-883
- Supplier Device Package: CST3
|
Paket: SC-101, SOT-883 |
Lager7.776 |
|
|
|
Toshiba Semiconductor and Storage |
TRANS PREBIAS NPN 200MW SMINI
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 800mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 2.2k
- Resistor - Emitter Base (R2) (Ohms): 10k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 100mA, 1V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 50mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 300MHz
- Power - Max: 200mW
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: S-Mini
|
Paket: TO-236-3, SC-59, SOT-23-3 |
Lager4.784 |
|
|
|
Toshiba Semiconductor and Storage |
TRANS 2PNP 120V 0.1A SM6
- Transistor Type: 2 PNP (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 120V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
- Power - Max: 300mW
- Frequency - Transition: 100MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-74, SOT-457
- Supplier Device Package: SM6
|
Paket: SC-74, SOT-457 |
Lager7.088 |
|
|
|
Toshiba Semiconductor and Storage |
TRANS 2NPN PREBIAS 0.3W SMV
- Transistor Type: 2 NPN - Pre-Biased (Dual) (Emitter Coupled)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 22k
- Resistor - Emitter Base (R2) (Ohms): 22k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: 250MHz
- Power - Max: 300mW
- Mounting Type: Surface Mount
- Package / Case: SC-74A, SOT-753
- Supplier Device Package: SMV
|
Paket: SC-74A, SOT-753 |
Lager26.250 |
|
|
|
Toshiba Semiconductor and Storage |
DIODE SCHOTTKY 60V 10A L-FLAT
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 60V
- Current - Average Rectified (Io): 10A (DC)
- Voltage - Forward (Vf) (Max) @ If: 0.58V @ 10A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 1mA @ 60V
- Capacitance @ Vr, F: 345pF @ 10V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: L-FLAT?
- Supplier Device Package: L-FLAT? (4x5.5)
- Operating Temperature - Junction: -40°C ~ 125°C
|
Paket: L-FLAT? |
Lager2.176 |
|
|
|
Toshiba Semiconductor and Storage |
DIODE SCHOTTKY 30V 500MA USC
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 30V
- Current - Average Rectified (Io): 500mA
- Voltage - Forward (Vf) (Max) @ If: 470mV @ 500mA
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 100µA @ 20V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: SC-76, SOD-323
- Supplier Device Package: USC
- Operating Temperature - Junction: 125°C (Max)
|
Paket: SC-76, SOD-323 |
Lager4.528 |
|
|
|
Toshiba Semiconductor and Storage |
IC REG LINEAR 30MA LSTM
- Output Configuration: -
- Output Type: -
- Number of Regulators: 1
- Voltage - Input (Max): -
- Voltage - Output (Min/Fixed): -
- Voltage - Output (Max): -
- Voltage Dropout (Max): -
- Current - Output: 30mA
- Current - Quiescent (Iq): -
- Current - Supply (Max): -
- PSRR: -
- Control Features: -
- Protection Features: -
- Operating Temperature: -40°C ~ 85°C
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 Long Body
- Supplier Device Package: LSTM
|
Paket: TO-226-3, TO-92-3 Long Body |
Lager4.800 |
|
|
|
Toshiba Semiconductor and Storage |
IC REG LINEAR 500MA LSTM
- Output Configuration: -
- Output Type: -
- Number of Regulators: 1
- Voltage - Input (Max): -
- Voltage - Output (Min/Fixed): -
- Voltage - Output (Max): -
- Voltage Dropout (Max): -
- Current - Output: 500mA
- Current - Quiescent (Iq): -
- Current - Supply (Max): -
- PSRR: -
- Control Features: -
- Protection Features: -
- Operating Temperature: -40°C ~ 105°C
- Mounting Type: Through Hole
- Package / Case: TO-220-3 Full Pack
- Supplier Device Package: LSTM
|
Paket: TO-220-3 Full Pack |
Lager2.480 |
|
|
|
Toshiba Semiconductor and Storage |
IC REG BUCK ADJ 2A SYNC 8SON
- Function: Step-Down
- Output Configuration: Positive
- Topology: Buck
- Output Type: Adjustable
- Number of Outputs: 1
- Voltage - Input (Min): 4.5V
- Voltage - Input (Max): 20V
- Voltage - Output (Min/Fixed): 0.8V
- Voltage - Output (Max): 18V
- Current - Output: 2A
- Frequency - Switching: 380kHz
- Synchronous Rectifier: Yes
- Operating Temperature: -40°C ~ 125°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SMD, Flat Lead
- Supplier Device Package: PS-8 (2.9x2.4)
|
Paket: 8-SMD, Flat Lead |
Lager7.024 |
|
|
|
Toshiba Semiconductor and Storage |
IC POWER DIST LOAD SWITCH 9WCSP
- Switch Type: General Purpose
- Number of Outputs: 1
- Ratio - Input:Output: 1:1
- Output Configuration: High Side
- Output Type: N-Channel
- Interface: On/Off
- Voltage - Load: 2.3 V ~ 28 V
- Voltage - Supply (Vcc/Vdd): Not Required
- Current - Output (Max): 3A
- Rds On (Typ): 73 mOhm
- Input Type: -
- Features: Slew Rate Controlled, Status Flag
- Fault Protection: Over Temperature, Over Voltage, Reverse Current, UVLO
- Operating Temperature: -40°C ~ 85°C (TA)
- Package / Case: 9-UFBGA, WLCSP
- Supplier Device Package: 9-WCSP
|
Paket: 9-UFBGA, WLCSP |
Lager36.534 |
|
|
|
Toshiba Semiconductor and Storage |
IC INVERTER HEX 14-DIP
- Logic Type: Inverter
- Number of Circuits: 6
- Number of Inputs: 6
- Features: -
- Voltage - Supply: 2 V ~ 6 V
- Current - Quiescent (Max): 1µA
- Current - Output High, Low: 5.2mA, 5.2mA
- Logic Level - Low: 0.5 V ~ 1.8 V
- Logic Level - High: 1.5 V ~ 4.2 V
- Max Propagation Delay @ V, Max CL: 13ns @ 6V, 50pF
- Operating Temperature: -40°C ~ 85°C
- Mounting Type: Through Hole
- Supplier Device Package: 14-DIP
- Package / Case: 14-DIP (0.300", 7.62mm)
|
Paket: 14-DIP (0.300", 7.62mm) |
Lager16.524 |
|
|
|
Toshiba Semiconductor and Storage |
IC INVERTER TRIPLE 74HC04 8-SSOP
- Logic Type: Inverter
- Number of Circuits: 3
- Number of Inputs: 3
- Features: -
- Voltage - Supply: 2 V ~ 6 V
- Current - Quiescent (Max): 1µA
- Current - Output High, Low: 5.2mA, 5.2mA
- Logic Level - Low: 0.5 V ~ 1.8 V
- Logic Level - High: 1.5 V ~ 4.2 V
- Max Propagation Delay @ V, Max CL: 13ns @ 6V, 50pF
- Operating Temperature: -40°C ~ 85°C
- Mounting Type: Surface Mount
- Supplier Device Package: US8
- Package / Case: 8-VFSOP (0.091", 2.30mm Width)
|
Paket: 8-VFSOP (0.091", 2.30mm Width) |
Lager43.590 |
|
|
|
Toshiba Semiconductor and Storage |
IC BUFF/DVR SNGL N-INV USV
- Logic Type: Buffer, Non-Inverting
- Number of Elements: 1
- Number of Bits per Element: 1
- Input Type: -
- Output Type: Push-Pull
- Current - Output High, Low: 8mA, 8mA
- Voltage - Supply: 4.5 V ~ 5.5 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 5-TSSOP, SC-70-5, SOT-353
- Supplier Device Package: USV
|
Paket: 5-TSSOP, SC-70-5, SOT-353 |
Lager28.716 |
|
|
|
Toshiba Semiconductor and Storage |
IC BUFF NON-INVERT 5.5V 20TSSOP
- Logic Type: Buffer, Non-Inverting
- Number of Elements: 2
- Number of Bits per Element: 4
- Input Type: -
- Output Type: Push-Pull
- Current - Output High, Low: 24mA, 24mA
- Voltage - Supply: 4.5 V ~ 5.5 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 20-TSSOP (0.173", 4.40mm Width)
- Supplier Device Package: 20-TSSOP
|
Paket: 20-TSSOP (0.173", 4.40mm Width) |
Lager19.806 |
|
|
|
Toshiba Semiconductor and Storage |
LCD 5.7INCH 320X240 QVGA
- Display Type: TFT - Color
- Display Mode: Transmissive
- Touchscreen: -
- Diagonal Screen Size: 5.7" (144.78mm)
- Viewing Area: 115.20mm W x 86.40mm H
- Backlight: LED - White
- Dot Pixels: 320 x 240 (QVGA)
- Interface: Parallel, 18-Bit (RGB)
- Graphics Color: Red, Green, Blue (RGB)
- Background Color: -
|
Paket: - |
Lager6.174 |
|
|
|
Toshiba Semiconductor and Storage |
TVS DIODE 5VWM 8.5VC FSC
- Type: Steering (Rail to Rail)
- Unidirectional Channels: 1
- Bidirectional Channels: -
- Voltage - Reverse Standoff (Typ): 5V (Max)
- Voltage - Breakdown (Min): 5.8V
- Voltage - Clamping (Max) @ Ipp: 8.5V (Typ)
- Current - Peak Pulse (10/1000µs): 1A (8/20µs)
- Power - Peak Pulse: -
- Power Line Protection: No
- Applications: General Purpose
- Capacitance @ Frequency: 15pF @ 1MHz
- Operating Temperature: -
- Mounting Type: Surface Mount
- Package / Case: 2-SMD, Flat Lead
- Supplier Device Package: fSC
|
Paket: 2-SMD, Flat Lead |
Lager2.124 |
|
|
|
Toshiba Semiconductor and Storage |
MAGNETIC SWITCH OMNIPOLAR SOT23F
- Function: Omnipolar Switch
- Technology: Hall Effect
- Polarization: Either
- Sensing Range: ±4.4mT Trip, ±0.9mT Release
- Test Condition: 25°C
- Voltage - Supply: 2.3 V ~ 5.5 V
- Current - Supply (Max): 1.6mA (Typ)
- Current - Output (Max): 5mA
- Output Type: Push-Pull
- Features: -
- Operating Temperature: -40°C ~ 85°C (TA)
- Package / Case: SOT-23-3 Flat Leads
- Supplier Device Package: SOT-23F
|
Paket: SOT-23-3 Flat Leads |
Lager7.272 |
|
|
|
Toshiba Semiconductor and Storage |
PHOTORELAY MOSFET 300MA 4-SOP
- Circuit: SPST-NO (1 Form A)
- Output Type: AC, DC
- On-State Resistance (Max): 1.5 Ohm
- Load Current: 300mA
- Voltage - Input: 1.15VDC
- Voltage - Load: 0 ~ 20 V
- Mounting Type: Surface Mount
- Termination Style: Gull Wing
- Package / Case: 4-SOP (0.173", 4.40mm)
- Supplier Device Package: 4-SOP (2.54mm)
- Relay Type: Relay
|
Paket: 4-SOP (0.173", 4.40mm) |
Lager7.272 |
|
|
|
Toshiba Semiconductor and Storage |
PHOTORELAY SPST-NO 100MA 350V
- Circuit: SPST-NO (1 Form A)
- Output Type: AC, DC
- On-State Resistance (Max): 50 Ohm
- Load Current: 100mA
- Voltage - Input: 1.27VDC
- Voltage - Load: 0 ~ 350 V
- Mounting Type: Surface Mount
- Termination Style: Gull Wing
- Package / Case: 4-SMD (0.300", 7.62mm)
- Supplier Device Package: 4-SMD
- Relay Type: Relay
|
Paket: 4-SMD (0.300", 7.62mm) |
Lager22.266 |
|
|
|
Toshiba Semiconductor and Storage |
PHOTOCOUPLER PHOTORELAY 4-DIP
- Circuit: SPST-NO (1 Form A)
- Output Type: AC, DC
- On-State Resistance (Max): 2 Ohm
- Load Current: 500mA
- Voltage - Input: 1.15VDC
- Voltage - Load: 0 ~ 60 V
- Mounting Type: Through Hole
- Termination Style: PC Pin
- Package / Case: 4-DIP (0.300", 7.62mm)
- Supplier Device Package: 4-DIP
- Relay Type: Relay
|
Paket: 4-DIP (0.300", 7.62mm) |
Lager61.644 |
|
|
|
Toshiba Semiconductor and Storage |
OPTOISO 5KV GATE DRIVER SO6L
- Technology: Optical Coupling
- Number of Channels: 1
- Voltage - Isolation: 5000Vrms
- Common Mode Transient Immunity (Min): 35kV/µs
- Propagation Delay tpLH / tpHL (Max): 150ns, 150ns
- Pulse Width Distortion (Max): 50ns
- Rise / Fall Time (Typ): 15ns, 8ns
- Current - Output High, Low: 2.5A, 2.5A
- Current - Peak Output: 2.5A
- Voltage - Forward (Vf) (Typ): 1.65V
- Current - DC Forward (If) (Max): 8mA
- Voltage - Supply: 10 V ~ 30 V
- Operating Temperature: -40°C ~ 110°C
- Mounting Type: Surface Mount
- Package / Case: 6-SOIC (0.295", 7.50mm Width)
- Supplier Device Package: 6-SO
- Approvals: CQC, cUR, UR, VDE
|
Paket: 6-SOIC (0.295", 7.50mm Width) |
Lager12.264 |
|
|
|
Toshiba Semiconductor and Storage |
L-MOS LVP SERIES INVERTER VCC:0.
- Logic Type: Inverter
- Number of Circuits: 1
- Number of Inputs: 1
- Features: -
- Voltage - Supply: 0.9V ~ 3.6V
- Current - Quiescent (Max): 1µA
- Current - Output High, Low: 8mA, 8mA
- Logic Level - Low: 0.1V ~ 0.4V
- Logic Level - High: 0.75V ~ 2.48V
- Max Propagation Delay @ V, Max CL: 4.4ns @ 3.3V, 30pF
- Operating Temperature: -40°C ~ 85°C
- Mounting Type: Surface Mount
- Supplier Device Package: USV
- Package / Case: 5-TSSOP, SC-70-5, SOT-353
|
Paket: 5-TSSOP, SC-70-5, SOT-353 |
Lager28.224 |
|
|
|
Toshiba Semiconductor and Storage |
200MA LDO VOUT3.9V DROPOUT180MV
- Output Configuration: -
- Output Type: -
- Number of Regulators: -
- Voltage - Input (Max): -
- Voltage - Output (Min/Fixed): -
- Voltage - Output (Max): -
- Voltage Dropout (Max): -
- Current - Output: -
- Current - Quiescent (Iq): -
- Current - Supply (Max): -
- PSRR: -
- Control Features: -
- Protection Features: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
|
Paket: - |
Lager3.600 |
|