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Toshiba Semiconductor and Storage |
MOSFET N-CH 40V 5.3A VS6
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 5.3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.3V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs: 4.7nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 10V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 700mW (Ta)
- Rds On (Max) @ Id, Vgs: 81 mOhm @ 2.7A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: VS-6 (2.9x2.8)
- Package / Case: SOT-23-6 Thin, TSOT-23-6
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Paket: SOT-23-6 Thin, TSOT-23-6 |
Lager3.392 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 250V 4.5A PW-MOLD
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 250V
- Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 440pF @ 10V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 20W (Tc)
- Rds On (Max) @ Id, Vgs: 1 Ohm @ 2.5A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PW-MOLD
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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Paket: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Lager3.984 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 550V 8.5A TO-220SIS
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 550V
- Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1050pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 40W (Tc)
- Rds On (Max) @ Id, Vgs: 860 mOhm @ 4.3A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220SIS
- Package / Case: TO-220-3 Full Pack
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Paket: TO-220-3 Full Pack |
Lager2.448 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 550V 5A TO-220SIS
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 550V
- Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 540pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 35W (Tc)
- Rds On (Max) @ Id, Vgs: 1.7 Ohm @ 2.5A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220SIS
- Package / Case: TO-220-3 Full Pack
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Paket: TO-220-3 Full Pack |
Lager3.072 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 60V 0.4A SOT23
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 400mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 40pF @ 10V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 320mW (Ta)
- Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 100mA, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23-3
- Package / Case: TO-236-3, SC-59, SOT-23-3
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Paket: TO-236-3, SC-59, SOT-23-3 |
Lager6.640 |
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Toshiba Semiconductor and Storage |
MOSFET N CH 60V 60A SOP ADV
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6.5V, 10V
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 72nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 6100pF @ 30V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.6W (Ta), 78W (Tc)
- Rds On (Max) @ Id, Vgs: 2.3 mOhm @ 30A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SOP Advance (5x5)
- Package / Case: 8-PowerVDFN
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Paket: 8-PowerVDFN |
Lager46.728 |
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Toshiba Semiconductor and Storage |
MOSFET N CH 30V 20A 8SOP
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 2.3V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 9.8nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 820pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.6W (Ta), 24W (Tc)
- Rds On (Max) @ Id, Vgs: 8.9 mOhm @ 10A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SOP Advance (5x5)
- Package / Case: 8-PowerVDFN
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Paket: 8-PowerVDFN |
Lager29.610 |
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Toshiba Semiconductor and Storage |
TRANS NPN 50MA 150V TO226-3
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 50mA
- Voltage - Collector Emitter Breakdown (Max): 150V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
- Power - Max: 800mW
- Frequency - Transition: 120MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 Long Body
- Supplier Device Package: TO-92MOD
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Paket: TO-226-3, TO-92-3 Long Body |
Lager5.840 |
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Toshiba Semiconductor and Storage |
TRANS PNP 2A 50V TO226-3
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 2A
- Voltage - Collector Emitter Breakdown (Max): 50V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
- Current - Collector Cutoff (Max): 1µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 2V
- Power - Max: 900mW
- Frequency - Transition: 100MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 Long Body
- Supplier Device Package: TO-92MOD
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Paket: TO-226-3, TO-92-3 Long Body |
Lager6.256 |
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Toshiba Semiconductor and Storage |
TRANSISTOR PNP 50V 150MA S-MINI
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 150mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2mA, 6V
- Power - Max: 150mW
- Frequency - Transition: 80MHz
- Operating Temperature: 125°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: S-Mini
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Paket: TO-236-3, SC-59, SOT-23-3 |
Lager36.000 |
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Toshiba Semiconductor and Storage |
TRANS NPN 230V 15A TO-3PL
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 15A
- Voltage - Collector Emitter Breakdown (Max): 230V
- Vce Saturation (Max) @ Ib, Ic: 3V @ 800mA, 8A
- Current - Collector Cutoff (Max): 5µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1A, 5V
- Power - Max: 150W
- Frequency - Transition: 30MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-3PL
- Supplier Device Package: TO-3P(L)
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Paket: TO-3PL |
Lager4.480 |
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Toshiba Semiconductor and Storage |
TRANS NPN 120V 0.1A S-MINI
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 120V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
- Power - Max: 150mW
- Frequency - Transition: 100MHz
- Operating Temperature: 125°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: TO-236
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Paket: TO-236-3, SC-59, SOT-23-3 |
Lager2.368 |
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Toshiba Semiconductor and Storage |
TRANS NPN 50V 0.5A S-MINI
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 500mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 1V
- Power - Max: 200mW
- Frequency - Transition: 300MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: S-Mini
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Paket: TO-236-3, SC-59, SOT-23-3 |
Lager197.706 |
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Toshiba Semiconductor and Storage |
DIODE SCHOTTKY 30V 140MA SOT23
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 30V
- Current - Average Rectified (Io): 140mA
- Voltage - Forward (Vf) (Max) @ If: 580mV @ 100mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): 1.5ns
- Current - Reverse Leakage @ Vr: 2µA @ 25V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23-3
- Operating Temperature - Junction: -55°C ~ 150°C
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Paket: TO-236-3, SC-59, SOT-23-3 |
Lager151.950 |
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Toshiba Semiconductor and Storage |
IC REG LINEAR 500MA LSTM
- Output Configuration: -
- Output Type: -
- Number of Regulators: 1
- Voltage - Input (Max): -
- Voltage - Output (Min/Fixed): -
- Voltage - Output (Max): -
- Voltage Dropout (Max): -
- Current - Output: 500mA
- Current - Quiescent (Iq): -
- Current - Supply (Max): -
- PSRR: -
- Control Features: -
- Protection Features: -
- Operating Temperature: -40°C ~ 105°C
- Mounting Type: Through Hole
- Package / Case: TO-220-3 Full Pack
- Supplier Device Package: LSTM
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Paket: TO-220-3 Full Pack |
Lager2.496 |
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Toshiba Semiconductor and Storage |
IC REG LINEAR 1V 200MA ESV
- Output Configuration: Positive
- Output Type: Fixed
- Number of Regulators: 1
- Voltage - Input (Max): 5.5V
- Voltage - Output (Min/Fixed): 1V
- Voltage - Output (Max): -
- Voltage Dropout (Max): -
- Current - Output: 200mA
- Current - Quiescent (Iq): -
- Current - Supply (Max): 2µA
- PSRR: -
- Control Features: Enable
- Protection Features: Over Current
- Operating Temperature: -40°C ~ 85°C
- Mounting Type: Surface Mount
- Package / Case: SOT-553
- Supplier Device Package: ESV
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Paket: SOT-553 |
Lager32.256 |
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Toshiba Semiconductor and Storage |
IC REG BUCK ADJ 6A SYNC 8SOP-ADV
- Function: Step-Down
- Output Configuration: Positive
- Topology: Buck
- Output Type: Adjustable
- Number of Outputs: 1
- Voltage - Input (Min): 2.7V
- Voltage - Input (Max): 5.6V
- Voltage - Output (Min/Fixed): 0.8V
- Voltage - Output (Max): 5.6V
- Current - Output: 6A
- Frequency - Switching: 1MHz
- Synchronous Rectifier: Yes
- Operating Temperature: -40°C ~ 125°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-PowerVDFN
- Supplier Device Package: 8-SOP Advance (5x5)
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Paket: 8-PowerVDFN |
Lager4.208 |
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Toshiba Semiconductor and Storage |
IC INVERTER HEX 14-TSSOP
- Logic Type: Inverter
- Number of Circuits: 6
- Number of Inputs: 6
- Features: -
- Voltage - Supply: 2 V ~ 5.5 V
- Current - Quiescent (Max): 2µA
- Current - Output High, Low: 8mA, 8mA
- Logic Level - Low: 0.3V
- Logic Level - High: 1.7V
- Max Propagation Delay @ V, Max CL: 7ns @ 5V, 50pF
- Operating Temperature: -40°C ~ 85°C
- Mounting Type: Surface Mount
- Supplier Device Package: 14-TSSOP
- Package / Case: 14-TSSOP (0.173", 4.40mm Width)
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Paket: 14-TSSOP (0.173", 4.40mm Width) |
Lager5.328 |
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Toshiba Semiconductor and Storage |
IC INVERTER UNBUFFER HS 5SSOP
- Logic Type: Inverter
- Number of Circuits: 1
- Number of Inputs: 1
- Features: -
- Voltage - Supply: 2 V ~ 5.5 V
- Current - Quiescent (Max): 2µA
- Current - Output High, Low: 8mA, 8mA
- Logic Level - Low: 0.3V
- Logic Level - High: 1.7V
- Max Propagation Delay @ V, Max CL: 7ns @ 5V, 50pF
- Operating Temperature: -40°C ~ 85°C
- Mounting Type: Surface Mount
- Supplier Device Package: USV
- Package / Case: 5-TSSOP, SC-70-5, SOT-353
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Paket: 5-TSSOP, SC-70-5, SOT-353 |
Lager23.112 |
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Toshiba Semiconductor and Storage |
IC BUS BUFFER 3-ST TTL 5-SSOP
- Logic Type: Buffer, Non-Inverting
- Number of Elements: 1
- Number of Bits per Element: 1
- Input Type: -
- Output Type: Push-Pull
- Current - Output High, Low: 8mA, 8mA
- Voltage - Supply: 4.5 V ~ 5.5 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: SC-74A, SOT-753
- Supplier Device Package: SMV
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Paket: SC-74A, SOT-753 |
Lager50.598 |
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Toshiba Semiconductor and Storage |
IC SWITCH SPST SMV5
- Switch Circuit: SPST - NO
- Multiplexer/Demultiplexer Circuit: 1:1
- Number of Circuits: 1
- On-State Resistance (Max): 160 Ohm
- Channel-to-Channel Matching (ΔRon): -
- Voltage - Supply, Single (V+): 3 V ~ 18 V
- Voltage - Supply, Dual (V±): -
- Switch Time (Ton, Toff) (Max): -
- -3db Bandwidth: 30MHz
- Charge Injection: -
- Channel Capacitance (CS(off), CD(off)): 0.5pF, 5pF
- Current - Leakage (IS(off)) (Max): 100nA
- Crosstalk: -
- Operating Temperature: -40°C ~ 85°C (TA)
- Package / Case: SC-74A, SOT-753
- Supplier Device Package: SMV
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Paket: SC-74A, SOT-753 |
Lager56.382 |
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Toshiba Semiconductor and Storage |
LED LETERAS NEU WHITE 4000K 2SMD
- Color: White, Neutral
- CCT (K): 4000K
- Flux @ 85°C, Current - Test: 145 lm (130 lm ~ 160 lm)
- Flux @ 25°C, Current - Test: -
- Current - Test: 350mA
- Voltage - Forward (Vf) (Typ): 2.8V
- Lumens/Watt @ Current - Test: 148 lm/W
- CRI (Color Rendering Index): 70
- Current - Max: 1.5A
- Viewing Angle: 120°
- Mounting Type: Surface Mount
- Package / Case: 1414 (3535 Metric)
- Supplier Device Package: 3535
- Size / Dimension: 0.138" L x 0.138" W (3.50mm x 3.50mm)
- Height - Seated (Max): 0.085" (2.15mm)
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Paket: 1414 (3535 Metric) |
Lager4.896 |
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Toshiba Semiconductor and Storage |
LCD 15" 1024X768 XGA LVDS
- Display Type: TFT - Color
- Display Mode: Transmissive
- Touchscreen: -
- Diagonal Screen Size: 15" (381.00mm)
- Viewing Area: 304.13mm W x 228.10mm H
- Backlight: CCFL
- Dot Pixels: 1024 x 768 (XGA)
- Interface: LVDS
- Graphics Color: Red, Green, Blue (RGB)
- Background Color: -
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Paket: - |
Lager8.982 |
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Toshiba Semiconductor and Storage |
PHOTORELAY MOSFET 350V 6SOP
- Circuit: SPST-NO (1 Form A)
- Output Type: AC, DC
- On-State Resistance (Max): 35 Ohm
- Load Current: 120mA
- Voltage - Input: 1.15VDC
- Voltage - Load: 0 ~ 350 V
- Mounting Type: Surface Mount
- Termination Style: Gull Wing
- Package / Case: 6-SOP (0.173", 4.40mm)
- Supplier Device Package: 6-SOP (2.54mm)
- Relay Type: Relay
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Paket: 6-SOP (0.173", 4.40mm) |
Lager600.000 |
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Toshiba Semiconductor and Storage |
OPTOISO 2.5KV DARL W/BASE 8DIP
- Number of Channels: 1
- Voltage - Isolation: 2500Vrms
- Current Transfer Ratio (Min): 500% @ 1.6mA
- Current Transfer Ratio (Max): -
- Turn On / Turn Off Time (Typ): 200ns, 1µs
- Rise / Fall Time (Typ): -
- Input Type: DC
- Output Type: Darlington with Base
- Voltage - Output (Max): 18V
- Current - Output / Channel: 60mA
- Voltage - Forward (Vf) (Typ): 1.65V
- Current - DC Forward (If) (Max): 20mA
- Vce Saturation (Max): -
- Operating Temperature: 0°C ~ 70°C
- Mounting Type: Through Hole
- Package / Case: 8-DIP (0.300", 7.62mm)
- Supplier Device Package: 8-DIP
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Paket: 8-DIP (0.300", 7.62mm) |
Lager7.740 |
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Toshiba Semiconductor and Storage |
OPTOISO 3.75KV GATE DRVR 8DIP
- Technology: Optical Coupling
- Number of Channels: 1
- Voltage - Isolation: 3750Vrms
- Common Mode Transient Immunity (Min): 20kV/µs
- Propagation Delay tpLH / tpHL (Max): 200ns, 200ns
- Pulse Width Distortion (Max): 50ns
- Rise / Fall Time (Typ): 15ns, 8ns
- Current - Output High, Low: 2A, 2A
- Current - Peak Output: 2.5A
- Voltage - Forward (Vf) (Typ): 1.55V
- Current - DC Forward (If) (Max): 20mA
- Voltage - Supply: 15 V ~ 30 V
- Operating Temperature: -40°C ~ 125°C
- Mounting Type: Through Hole
- Package / Case: 8-DIP (0.300", 7.62mm)
- Supplier Device Package: 8-DIP
- Approvals: CSA, cUL, UL, VDE
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Paket: 8-DIP (0.300", 7.62mm) |
Lager6.468 |
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Toshiba Semiconductor and Storage |
OPTOISO 5KV GATE DRIVER SO6L
- Technology: Optical Coupling
- Number of Channels: 1
- Voltage - Isolation: 5000Vrms
- Common Mode Transient Immunity (Min): 35kV/µs
- Propagation Delay tpLH / tpHL (Max): 150ns, 150ns
- Pulse Width Distortion (Max): 50ns
- Rise / Fall Time (Typ): 15ns, 8ns
- Current - Output High, Low: 1A, 1A
- Current - Peak Output: 1A
- Voltage - Forward (Vf) (Typ): 1.65V
- Current - DC Forward (If) (Max): 8mA
- Voltage - Supply: 10 V ~ 30 V
- Operating Temperature: -40°C ~ 110°C
- Mounting Type: Surface Mount
- Package / Case: 6-SOIC (0.295", 7.50mm Width)
- Supplier Device Package: 6-SO
- Approvals: CQC, cUR, UR, VDE
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Paket: 6-SOIC (0.295", 7.50mm Width) |
Lager14.658 |
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Toshiba Semiconductor and Storage |
IC REG LINEAR 0.9V 1.5A 6WCSP
- Output Configuration: Positive
- Output Type: Fixed
- Number of Regulators: 1
- Voltage - Input (Max): 6V
- Voltage - Output (Min/Fixed): 0.9V
- Voltage - Output (Max): -
- Voltage Dropout (Max): 0.216V @ 1.5A
- Current - Output: 1.5A
- Current - Quiescent (Iq): 40µA
- Current - Supply (Max): -
- PSRR: 95dB ~ 60dB (1kHz)
- Control Features: Enable
- Protection Features: Current Limit, Thermal Shutdown, UVLO
- Operating Temperature: -40°C ~ 85°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-XFBGA, WLCSP
- Supplier Device Package: 6-WCSP (1.2x0.80)
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Paket: 6-XFBGA, WLCSP |
Lager37.434 |
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Toshiba Semiconductor and Storage |
3-PHASE BI-CMOS BRUSHLESS MOTOR
- Motor Type - Stepper: -
- Motor Type - AC, DC: Brushless DC (BLDC)
- Function: Driver
- Output Configuration: Pre-Driver
- Interface: PWM, SPI
- Technology: Bi-CMOS
- Step Resolution: -
- Applications: Automotive
- Current - Output: -
- Voltage - Supply: 3V ~ 5.5V
- Voltage - Load: 4.5V ~ 28V
- Operating Temperature: -40°C ~ 125°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 64-LQFP
- Supplier Device Package: 64-LQFP (10x10)
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Paket: 64-LQFP |
Lager14.046 |
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Toshiba Semiconductor and Storage |
200MA LDO VOUT4.0V DROPOUT180MV
- Output Configuration: -
- Output Type: -
- Number of Regulators: -
- Voltage - Input (Max): -
- Voltage - Output (Min/Fixed): -
- Voltage - Output (Max): -
- Voltage Dropout (Max): -
- Current - Output: -
- Current - Quiescent (Iq): -
- Current - Supply (Max): -
- PSRR: -
- Control Features: -
- Protection Features: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Paket: - |
Lager4.096 |
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