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Toshiba Semiconductor and Storage |
MOSFET N-CH
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: Through Hole
- Supplier Device Package: TO-92MOD
- Package / Case: TO-226-3, TO-92-3 Long Body
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Paket: TO-226-3, TO-92-3 Long Body |
Lager6.816 |
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Toshiba Semiconductor and Storage |
MOSFET N CH 600V 8A IPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.7V @ 400µA
- Gate Charge (Qg) (Max) @ Vgs: 18.5nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 570pF @ 300V
- Vgs (Max): ±30V
- FET Feature: Super Junction
- Power Dissipation (Max): 80W (Tc)
- Rds On (Max) @ Id, Vgs: 500 mOhm @ 4A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: I-Pak
- Package / Case: TO-251-3 Stub Leads, IPak
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Paket: TO-251-3 Stub Leads, IPak |
Lager3.216 |
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Toshiba Semiconductor and Storage |
MOSFET N CH 600V 7A DPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.7V @ 350µA
- Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 490pF @ 300V
- Vgs (Max): ±30V
- FET Feature: Super Junction
- Power Dissipation (Max): 60W (Tc)
- Rds On (Max) @ Id, Vgs: 600 mOhm @ 3.5A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DPAK
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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Paket: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Lager2.256.108 |
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Toshiba Semiconductor and Storage |
MOSFET P-CH 40V 15A DPAK-3
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 10V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 29W (Tc)
- Rds On (Max) @ Id, Vgs: 36 mOhm @ 7.5A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DPAK
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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Paket: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Lager6.784 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 40V 150A 8DSOP
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 103nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 9600pF @ 20V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1W (Ta), 170W (Tc)
- Rds On (Max) @ Id, Vgs: 0.8 mOhm @ 50A, 10V
- Operating Temperature: 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-DSOP Advance
- Package / Case: 8-PowerWDFN
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Paket: 8-PowerWDFN |
Lager7.360 |
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Toshiba Semiconductor and Storage |
MOSFET N CH 600V 5.4A DPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.7V @ 270µA
- Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 380pF @ 300V
- Vgs (Max): ±30V
- FET Feature: Super Junction
- Power Dissipation (Max): 60W (Tc)
- Rds On (Max) @ Id, Vgs: 900 mOhm @ 2.7A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DPAK
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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Paket: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Lager2.000 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 50A SOP-8 ADV
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 50A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.3V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 88nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 7800pF @ 10V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.6W (Ta), 45W (Tc)
- Rds On (Max) @ Id, Vgs: 2.8 mOhm @ 25A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SOP Advance (5x5)
- Package / Case: 8-PowerVDFN
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Paket: 8-PowerVDFN |
Lager68.754 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 20V 3.2A ES6
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 10.8nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 510pF @ 10V
- Vgs (Max): ±10V
- FET Feature: -
- Power Dissipation (Max): 500mW (Ta)
- Rds On (Max) @ Id, Vgs: 47 mOhm @ 2A, 4.5V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: ES6 (1.6x1.6)
- Package / Case: SOT-563, SOT-666
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Paket: SOT-563, SOT-666 |
Lager2.720 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 650V 11.1A DPAK-0S
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650V
- Current - Continuous Drain (Id) @ 25°C: 11.1A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.5V @ 450µA
- Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 890pF @ 300V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 100W (Tc)
- Rds On (Max) @ Id, Vgs: 440 mOhm @ 5.5A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DPAK
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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Paket: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Lager238.692 |
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Toshiba Semiconductor and Storage |
TRANS NPN 2A 50V TO226-3
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 2A
- Voltage - Collector Emitter Breakdown (Max): 50V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
- Current - Collector Cutoff (Max): 1µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
- Power - Max: 900mW
- Frequency - Transition: 100MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 Long Body
- Supplier Device Package: TO-92MOD
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Paket: TO-226-3, TO-92-3 Long Body |
Lager5.712 |
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Toshiba Semiconductor and Storage |
TRANS NPN 2A 50V TO226-3
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 2A
- Voltage - Collector Emitter Breakdown (Max): 50V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
- Current - Collector Cutoff (Max): 1µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
- Power - Max: 900mW
- Frequency - Transition: 100MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 Long Body
- Supplier Device Package: TO-92MOD
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Paket: TO-226-3, TO-92-3 Long Body |
Lager5.040 |
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Toshiba Semiconductor and Storage |
TRANS PNP 5A 50V TO220-3
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 5A
- Voltage - Collector Emitter Breakdown (Max): 50V
- Vce Saturation (Max) @ Ib, Ic: 400mV @ 200mA, 2A
- Current - Collector Cutoff (Max): 1µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 1V
- Power - Max: 2W
- Frequency - Transition: 60MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3 Full Pack
- Supplier Device Package: TO-220NIS
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Paket: TO-220-3 Full Pack |
Lager7.168 |
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Toshiba Semiconductor and Storage |
TRANS NPN 50V 0.15A S-MINI
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 150mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
- Power - Max: 150mW
- Frequency - Transition: 80MHz
- Operating Temperature: 125°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: S-Mini
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Paket: TO-236-3, SC-59, SOT-23-3 |
Lager299.178 |
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Toshiba Semiconductor and Storage |
TRANS PREBIAS NPN 0.1W CST3
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 80mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 22k
- Resistor - Emitter Base (R2) (Ohms): 47k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: -
- Power - Max: 100mW
- Mounting Type: Surface Mount
- Package / Case: SC-101, SOT-883
- Supplier Device Package: CST3
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Paket: SC-101, SOT-883 |
Lager4.960 |
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Toshiba Semiconductor and Storage |
DIODE SCHOTTKY 40V 3A MFLAT
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 40V
- Current - Average Rectified (Io): 3A
- Voltage - Forward (Vf) (Max) @ If: 550mV @ 3A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 200µA @ 40V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: SOD-128
- Supplier Device Package: M-FLAT (2.4x3.8)
- Operating Temperature - Junction: -40°C ~ 150°C
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Paket: SOD-128 |
Lager21.744 |
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Toshiba Semiconductor and Storage |
IC REG LINEAR 0.5MA LSTM
- Output Configuration: -
- Output Type: -
- Number of Regulators: 1
- Voltage - Input (Max): -
- Voltage - Output (Min/Fixed): -
- Voltage - Output (Max): -
- Voltage Dropout (Max): -
- Current - Output: 0.5mA
- Current - Quiescent (Iq): -
- Current - Supply (Max): -
- PSRR: -
- Control Features: -
- Protection Features: -
- Operating Temperature: -40°C ~ 85°C
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 Long Body
- Supplier Device Package: LSTM
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Paket: TO-226-3, TO-92-3 Long Body |
Lager7.312 |
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Toshiba Semiconductor and Storage |
IC PWR SWITCH P-CHAN 1:1 WCSP6E
- Switch Type: General Purpose
- Number of Outputs: 1
- Ratio - Input:Output: 1:1
- Output Configuration: High Side
- Output Type: P-Channel
- Interface: On/Off
- Voltage - Load: 1.1 V ~ 5.5 V
- Voltage - Supply (Vcc/Vdd): Not Required
- Current - Output (Max): 2A
- Rds On (Typ): 25 mOhm
- Input Type: Non-Inverting
- Features: Load Discharge, Slew Rate Controlled
- Fault Protection: Reverse Current
- Operating Temperature: -40°C ~ 85°C (TA)
- Package / Case: 6-UFBGA, WLCSP
- Supplier Device Package: 6-WCSPE (0.80x1.2)
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Paket: 6-UFBGA, WLCSP |
Lager50.424 |
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Toshiba Semiconductor and Storage |
IC MOTOR DRIVER PAR 48QFN
- Motor Type - Stepper: Bipolar
- Motor Type - AC, DC: -
- Function: Driver - Fully Integrated, Control and Power Stage
- Output Configuration: Half Bridge (4)
- Interface: Parallel
- Technology: DMOS
- Step Resolution: 1, 1/2, 1/4
- Applications: General Purpose
- Current - Output: 2A
- Voltage - Supply: 4.75 V ~ 5.25 V
- Voltage - Load: 10 V ~ 38 V
- Operating Temperature: -20°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 48-VFQFN Exposed Pad
- Supplier Device Package: 48-QFN (7x7)
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Paket: 48-VFQFN Exposed Pad |
Lager6.960 |
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Toshiba Semiconductor and Storage |
IC BUS SWITCH SPST DUAL CST8
- Type: Bus Switch
- Circuit: 2 x 1:1
- Independent Circuits: 1
- Current - Output High, Low: -
- Voltage Supply Source: Dual Supply
- Voltage - Supply: 1.1 V ~ 2.7 V, 1.65 V ~ 3.6 V
- Operating Temperature: -40°C ~ 85°C
- Mounting Type: Surface Mount
- Package / Case: 8-XFDFN Exposed Pad
- Supplier Device Package: CST8
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Paket: 8-XFDFN Exposed Pad |
Lager2.432 |
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Toshiba Semiconductor and Storage |
X34 PB-F VHS TSSOP 14 CMOS LOGIC
- Logic Type: Inverter
- Number of Circuits: 6
- Number of Inputs: 6
- Features: Schmitt Trigger
- Voltage - Supply: 2 V ~ 5.5 V
- Current - Quiescent (Max): 2µA
- Current - Output High, Low: 8mA, 8mA
- Logic Level - Low: 0.1 V ~ 0.36V
- Logic Level - High: 2 V ~ 4.5 V
- Max Propagation Delay @ V, Max CL: 10.6ns @ 5V, 50pF
- Operating Temperature: -40°C ~ 125°C (TA)
- Mounting Type: Surface Mount
- Supplier Device Package: 14-TSSOPB
- Package / Case: 14-TSSOP (0.173", 4.40mm Width)
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Paket: 14-TSSOP (0.173", 4.40mm Width) |
Lager3.520 |
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Toshiba Semiconductor and Storage |
IC BUFF NON-INVERT 5.5V SMV
- Logic Type: Buffer, Non-Inverting
- Number of Elements: 1
- Number of Bits per Element: 1
- Input Type: -
- Output Type: Push-Pull
- Current - Output High, Low: 8mA, 8mA
- Voltage - Supply: 2 V ~ 5.5 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: SC-74A, SOT-753
- Supplier Device Package: SMV
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Paket: SC-74A, SOT-753 |
Lager21.840 |
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Toshiba Semiconductor and Storage |
IC PHOTORELAY MOSFET 6-SOP
- Circuit: SPST-NO (1 Form A)
- Output Type: AC, DC
- On-State Resistance (Max): 60 mOhm
- Load Current: 3.3A
- Voltage - Input: 1.33VDC
- Voltage - Load: 0 ~ 60 V
- Mounting Type: Surface Mount
- Termination Style: Gull Wing
- Package / Case: 6-SOP (0.173", 4.40mm)
- Supplier Device Package: 6-SOP (2.54mm)
- Relay Type: Relay
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Paket: 6-SOP (0.173", 4.40mm) |
Lager6.948 |
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Toshiba Semiconductor and Storage |
IC PHOTORELAY MOSFET 4-SOP
- Circuit: SPST-NO (1 Form A)
- Output Type: AC, DC
- On-State Resistance (Max): 60 Ohm
- Load Current: 90mA
- Voltage - Input: 1.15VDC
- Voltage - Load: 0 ~ 600 V
- Mounting Type: Surface Mount
- Termination Style: Gull Wing
- Package / Case: 4-SOP (0.173", 4.40mm)
- Supplier Device Package: 4-SOP (2.54mm)
- Relay Type: Relay
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Paket: 4-SOP (0.173", 4.40mm) |
Lager6.408 |
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Toshiba Semiconductor and Storage |
OPTOISO 3.75KV TRANS 6-SO 4 LEAD
- Number of Channels: 1
- Voltage - Isolation: 3750Vrms
- Current Transfer Ratio (Min): 100% @ 5mA
- Current Transfer Ratio (Max): 600% @ 5mA
- Turn On / Turn Off Time (Typ): 3µs, 3µs
- Rise / Fall Time (Typ): 2µs, 3µs
- Input Type: AC, DC
- Output Type: Transistor
- Voltage - Output (Max): 80V
- Current - Output / Channel: 50mA
- Voltage - Forward (Vf) (Typ): 1.25V
- Current - DC Forward (If) (Max): 50mA
- Vce Saturation (Max): 300mV
- Operating Temperature: -55°C ~ 125°C
- Mounting Type: Surface Mount
- Package / Case: 6-SMD (4 Leads), Gull Wing
- Supplier Device Package: 6-SO, 4 Lead
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Paket: 6-SMD (4 Leads), Gull Wing |
Lager8.838 |
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Toshiba Semiconductor and Storage |
OPTOISO 3.75KV GATE DRIVER 8SO
- Technology: Optical Coupling
- Number of Channels: 1
- Voltage - Isolation: 3750Vrms
- Common Mode Transient Immunity (Min): 20kV/µs
- Propagation Delay tpLH / tpHL (Max): 500ns, 500ns
- Pulse Width Distortion (Max): 350ns
- Rise / Fall Time (Typ): 50ns, 50ns
- Current - Output High, Low: 400mA, 400mA
- Current - Peak Output: 600mA
- Voltage - Forward (Vf) (Typ): 1.55V
- Current - DC Forward (If) (Max): 25mA
- Voltage - Supply: 10 V ~ 30 V
- Operating Temperature: -40°C ~ 125°C
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
- Approvals: CSA, cUL, UL
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Paket: 8-SOIC (0.154", 3.90mm Width) |
Lager6.168 |
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Toshiba Semiconductor and Storage |
STEPPER MOTOR DRIVER IC 40V/1.8A
- Motor Type - Stepper: -
- Motor Type - AC, DC: -
- Function: -
- Output Configuration: -
- Interface: -
- Technology: -
- Step Resolution: -
- Applications: -
- Current - Output: -
- Voltage - Supply: -
- Voltage - Load: -
- Operating Temperature: -
- Mounting Type: Surface Mount
- Package / Case: 32-VFQFN Exposed Pad
- Supplier Device Package: 32-VQFN (5x5)
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Paket: 32-VFQFN Exposed Pad |
Lager29.676 |
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Toshiba Semiconductor and Storage |
IC BUFFER NON-INVERT 6V 16DIP
- Logic Type: Buffer, Non-Inverting
- Number of Elements: 6
- Number of Bits per Element: 1
- Input Type: -
- Output Type: Push-Pull
- Current - Output High, Low: 7.8mA, 7.8mA
- Voltage - Supply: 2 V ~ 6 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Through Hole
- Package / Case: 16-DIP (0.300", 7.62mm)
- Supplier Device Package: 16-DIP
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Paket: 16-DIP (0.300", 7.62mm) |
Lager3.200 |
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Toshiba Semiconductor and Storage |
ISO AMP ANALOG OUTPUT GAIN SAFE
- Amplifier Type: Isolation
- Number of Circuits: 1
- Output Type: Differential
- Slew Rate: -
- Gain Bandwidth Product: -
- -3db Bandwidth: 230kHz
- Current - Input Bias: 5.5nA
- Voltage - Input Offset: 900µV
- Current - Supply: 12mA
- Current - Output / Channel: -
- Voltage - Supply, Single/Dual (±): 4.5 V ~ 5.5 V
- Operating Temperature: -40°C ~ 105°C
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.295", 7.50mm Width)
- Supplier Device Package: 8-SO
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Paket: 8-SOIC (0.295", 7.50mm Width) |
Lager6.992 |
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Toshiba Semiconductor and Storage |
TX FAMILY MCU
- Core Processor: ARM® Cortex®-M3
- Core Size: 32-Bit
- Speed: 64MHz
- Connectivity: EBI/EMI, I²C, IrDA, Microwire, SIO, SPI, SSI, SSP, UART/USART
- Peripherals: DMA, LVD, POR, WDT
- Number of I/O: 72
- Program Memory Size: 1MB (1M x 8)
- Program Memory Type: FLASH
- EEPROM Size: -
- RAM Size: 258K x 8
- Voltage - Supply (Vcc/Vdd): 2.7 V ~ 3.6 V
- Data Converters: A/D 16x12b
- Oscillator Type: External
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: -
- Package / Case: 100-LQFP
- Supplier Device Package: 100-LQFP (14x14)
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Paket: 100-LQFP |
Lager16.872 |
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Toshiba Semiconductor and Storage |
TXZ FAMILY MCU
- Core Processor: ARM® Cortex®-M4F
- Core Size: 32-Bit
- Speed: 160MHz
- Connectivity: CEC, EBI/EMI, I²C, IrDA, SIO, SPI, SMIF, UART/USART
- Peripherals: DMA, LVD, POR, WDT
- Number of I/O: 86
- Program Memory Size: 768KB (768K x 8)
- Program Memory Type: FLASH
- EEPROM Size: 32K x 8
- RAM Size: 128K x 8
- Voltage - Supply (Vcc/Vdd): 2.7V ~ 3.6V
- Data Converters: A/D 16x12b; D/A 2x8b
- Oscillator Type: Internal
- Operating Temperature: -40°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 100-LQFP
- Supplier Device Package: 100-LQFP (14x14)
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Paket: 100-LQFP |
Lager7.968 |
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